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2013 - Not Available

Abstract: No abstract text available
Text: 50W/SPST 200Vdc SUS 316L 0.5A 1A XLPE or TEFLON 5 kg/ cm2 FDMH50A/56A SUS 304 240Vac 50W/SPST FDMH60A/66A SUS 316L 200Vdc 0.5A 1A XLPE or TEFLON 5 kg/ cm2 80LC FDMH5 , XLPE or TEFLON 5 kg/ cm2 -20~120LC FDMH5:0.92 FDMH6:0.75 6 HOW TO ORDER SINGLE SWITCHES , Specific Gravity 50W SPST 240Vac/200Vdc Lead Wire Max. Pressure (Kg/ cm2 ) FD5091D FD5092D , Current Max. (A) 0.5A 1A Carry Current Max. (A) Max. Pressure (Kg/ cm2 ) FCH24YD FCH34YD


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PDF D-65428 08-FC-B0-EP,
5962R8961002VHA

Abstract: rh1499mw RH1009MH TID RADIATION TEST OF OP. AMP 5962R8961002VXC 1X10E12 RH6105 RH1014MW 5962R0920602 LDO spice model
Text: ) SEE Neutron n/ cm2 SPICE model WCCA RH101ADICE RH101ADICE 200K 200K 200K 200K 100K 100K , Neutron n/ cm2 Planned Planned Planned SPICE model WCCA RH DICE InsideTM Description Dual Micropower , (3) Note(3) Note(3) Note(3) Note(4) Note(4) Neutron n/ cm2 Planned Planned Planned Planned SPICE model , EAR99 EAR99 ITAR ITAR ITAR ITAR TID rad(Si) ELDRS rad(Si) SEE Neutron n/ cm2 SPICE model WCCA RH DICE , ) Note(8) Note(8) Note(8) Neutron n/ cm2 Planned Planned Planned Planned Planned Planned SPICE model WCCA


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PDF LF198H LM101AH LM101AJ8 LM101AW RH101AH RH101AJ8 RH101AW RH101ADICE MSK0041RH MSK106RH 5962R8961002VHA rh1499mw RH1009MH TID RADIATION TEST OF OP. AMP 5962R8961002VXC 1X10E12 RH6105 RH1014MW 5962R0920602 LDO spice model
uv flame sensor

Abstract: thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
Text: 85 cm2 / V-sec 1020 -100 cm / V-sec 0.10 -10.0 microns ± 25% of selected thickness p-type_ 115-75 cm2 /V-sec 115-75 cm2 /V-sec * Call Cree's Material Sales Department for availability. •j , Specific to order Mobility Range @ RT n-type p-type to c-axis 400 - 85 cm2 /V-sec 90 - 55 cm2 /V-sec II to c-axis 80 -15 cm2 /V-sec 90 - 55 cm2 /V-sec Thickness Ranged 0.10-10.0 microns Tolerance Â


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PDF 2771J 161-IMO uv flame sensor thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
2N5531

Abstract: SOLITRON 10MHZ 2N5527 BR100A BR101A SOLITRON DEVICES
Text: SOLITRON DEVICES INC ' DFJ fl3bflb02 DDünSb b r-ll-cs' _ _RADIATION RESISTANT NPN SILICON POWER TRANSISTORS BR100A BR101A NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 5 AMPERES APPLICATIONS POWER AMPLIFIER RADIATION ENVIRONMENTS ULTRA HIGH FREQUENCY FEATURES MEDIUM POWER RADIATION EXPOSURE LEVEL TO 3x10l4n/ Cm2 TOTAL NEUTRON FLUX EQUIVALENT TO 1 MEV TO-5 ABSOLUTE MAXIMUM RATINGS , 2N5527 2N5531. (1): Pulsed 300/tsac; 254 Duty Cycle Note 2: After exposure, 1 x 10"n/ Cm2 , Flux 1MEV


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PDF fl3bflb02 BR100A BR101A 3x10l4n/Cm2 BR100A 2N5531 SOLITRON 10MHZ 2N5527 BR101A SOLITRON DEVICES
220V DC power control

Abstract: AC POWER CORD 220V calcium carbide JST-77 99AB
Text: JSTP-72 Factory-set pressure for cut-in at 1.2 kg/ cm2 and cut-out at 2.4 kg/ cm2 . (Accept your specified pressure between 0.5-3.5 kg/ cm2 ) JST-75 Single * Lengeth of JST-75 cable may be extended


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PDF 110/220V JST-77 110/220V JSTR-101 220V DC power control AC POWER CORD 220V calcium carbide 99AB
2004 - IEC1131

Abstract: VN800PT VN800PT13TR VN800S VN800S13TR w822
Text: ) °C/W (1) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35µ thick) connected to all V CC pins. (2) When mounted on FR4 printed circuit board with 2 cm2 of copper area (at least 35µ thick). (3) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35µ thick) connected to all V CC pins. (4) When mounted on FR4 printed circuit board with 6 cm2 of , 1.5 2 2.5 PCB Cu heatsink area ( cm^2 ) 13/22 VN800S / VN800PT PPAK THERMAL DATA


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PDF VN800S VN800PT VN800S, VN800PT IEC1131 VN800PT13TR VN800S VN800S13TR w822
2011 - Not Available

Abstract: No abstract text available
Text: other. Ta-PD Characteristics 3.5 j-a (Copper Laminate Area) 35.8°C/W (30.8 cm2 ) 3.0 38.2°C/W (15.6 cm2 ) 42.6°C/W (8.64 cm2 ) Power Dissipation PD (W) PD = VO·IO 2.5 52.3°C/W (3.34 cm2 ) 100 VO ­1 ­ VF·IO 1­ VIN 2.0 69.2°C/W (0.84 cm2 ) 1.5 1.0 0.5 0.0 ­25 VO : VIN : IO : : VF


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PDF SPI-8001TW/SPI-8002TW/SPI-8003TW TYP80% SPI-8001TW) TYP78% SPI-8002TW) SPI8001TW) 250kHz)
2002 - L-11721

Abstract: 4.8ohm thermal resistor pulse load resistor calculation formula L775
Text: printed circuit board with 0.5 cm2 of copper area (at least 35µ thick) connected to all VCC pins. (*) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35µ thick). , 2 pins connected to TAB 110 105 100 95 90 85 80 75 70 0 0.5 1 1.5 2 2.5 PCB Cu heatsink area ( cm^2 , 10 0 0 2 4 6 8 10 PCB Cu heatsink area ( cm^2 ) 14/21 VN800S / VN800PT SO-8 Thermal Impedance Junction Ambient Single Pulse ZTH (°C /W) 1000 100 0.5 cm2 2 cm2 10 1 0.1 0.0001 0.001


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PDF VN800S VN800PT VN800S, VN800PT VN80ights L-11721 4.8ohm thermal resistor pulse load resistor calculation formula L775
2002 - 48Ohm

Abstract: pulse load resistor calculation formula 4.8ohm thermal resistor VN800S IEC1131 VN800PT VN800PT13TR VN800S13TR
Text: on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35µ thick) connected to all VCC pins. (*) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35µ thick). , 0.5 1 1.5 2 2.5 PCB Cu heatsink area ( cm^2 ) 13/21 VN800S / VN800PT PPAK , 6 PCB Cu heatsink area ( cm^2 ) 14/21 8 10 VN800S / VN800PT SO-8 Thermal Impedance Junction Ambient Single Pulse ZT H (°C/W) 1000 0.5 cm2 100 2 cm2 10 1 0.1 0.0001


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PDF VN800S VN800PT VN800S, VN800PT 48Ohm pulse load resistor calculation formula 4.8ohm thermal resistor VN800S IEC1131 VN800PT13TR VN800S13TR
2012 - Not Available

Abstract: No abstract text available
Text: °C/W (30.8 cm2 ) Power Dissipation PD (W) 3.0 38.2°C/W (15.6 cm2 ) PD = VO·IO 42.6°C/W (8.64 cm2 ) 2.5 100 VO –1 – VF·IO 1– ηχ VIN 52.3°C/W (3.34 cm2 ) 2.0 VO : VIN : IO : ηχ : VF : 69.2°C/W (0.84 cm2 ) 1.5 1.0 0.5 0.0 –25 0 25 50 75


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PDF SPI-8001TW/SPI-8002TW/SPI-8003TW SPI-8003TW SPI-8002TW 250kHz) SPI8001TW)
HSOP16

Abstract: SPI-8001TW SPI-8002TW
Text: Laminate Area) 35.8°C/W (30.8 cm2 ) Power Dissipation PD (W) 3.0 38.2°C/W (15.6 cm2 ) PD = VO·IO 42.6°C/W (8.64 cm2 ) 2.5 100 VO ­1 ­ VF·IO 1­ VIN 52.3°C/W (3.34 cm2 ) 2.0 VO : VIN : IO : : VF : 69.2°C/W (0.84 cm2 ) 1.5 1.0 0.5 0.0 ­25 0 25 50 75 100


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PDF SPI-8001TW/SPI-8002TW/SPI-8003TW SPI-8003TW SPI-8002TW 250kHz) SPI8001TW) HSOP16 SPI-8001TW SPI-8002TW
2007 - SPI-8001TW

Abstract: C5134 HSOP16 SPI-8002TW C358C
Text: (Copper Laminate Area) 35.8°C/W (30.8 cm2 ) Power Dissipation PD (W) 3.0 38.2°C/W (15.6 cm2 ) PD = VO·IO 42.6°C/W (8.64 cm2 ) 2.5 100 VO ­1 ­ VF·IO 1­ VIN 52.3°C/W (3.34 cm2 ) 2.0 VO : VIN : IO : : VF : 69.2°C/W (0.84 cm2 ) 1.5 1.0 0.5 0.0 ­25 0 25 50


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PDF SPI-8001TW/SPI-8002TW/SPI-8003TW SPI-8003TW SPI-8002TW 250kHz) SPI-8001TW C5134 HSOP16 SPI-8002TW C358C
2008 - HSOP16

Abstract: SPI-8001TW SPI-8002TW
Text: Characteristics 3.5 j-a (Copper Laminate Area) 35.8°C/W (30.8 cm2 ) Power Dissipation PD (W) 3.0 38.2°C/W (15.6 cm2 ) PD = VO·IO 42.6°C/W (8.64 cm2 ) 2.5 100 VO ­1 ­ VF·IO 1­ VIN 52.3°C/W (3.34 cm2 ) 2.0 VO : VIN : IO : : VF : 69.2°C/W (0.84 cm2 ) 1.5 1.0 0.5 0.0 ­25


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PDF SPI-8001TW/SPI-8002TW/SPI-8003TW SPI-8003TW SPI-8002TW 250kHz) HSOP16 SPI-8001TW SPI-8002TW
2007 - Not Available

Abstract: No abstract text available
Text: . ■Ta-PD Characteristics 3.5 θ j-a (Copper Laminate Area) 35.8°C/W (30.8 cm2 ) Power Dissipation PD (W) 3.0 38.2°C/W (15.6 cm2 ) PD = VO·IO 42.6°C/W (8.64 cm2 ) 2.5 100 VO –1 – VF·IO 1– ηχ VIN 52.3°C/W (3.34 cm2 ) 2.0 VO : VIN : IO : ηχ : VF : 69.2°C/W (0.84 cm2 ) 1.5 1.0 0.5 0.0 –25 0 25 50 75 100 Output Voltage Input Voltage


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PDF SPI-8001TW/SPI-8002TW 250kHz) SPI8001TW) SPI-8002TW) SPI-8002TW SFPB-66Â
SI-1125HD equivalent

Abstract: mosfet 257A
Text: for 1E13 Neutrons/ cm2 Usable to 1E14 Neutrons/ cm2 Typically Survives 1E5 lons/ cm2 Having an LET £ 35MeV/mg/ cm2 and a Range 2 30 m at 80% BVqss · Gamma Dot · Photo Current · Neutron · Single Event , hardness ranging from 1E13n/ cm2 for 500V product to 1E14n/ cm2 for 100V product. Dose rate hardness (GAMMA


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PDF -204A -254A -257A -258AA 10kRAD 10OOkRAD MIL-S-19500, MIL-S-19500. SI-1125HD equivalent mosfet 257A
HPDB1B-48D

Abstract: HPDB5K-15A HPDB3J-14D HPDR3K-15A HPDR3K-45A hpdb5 HPDB5-14D-B
Text: 1.0 not soldered 3.1±0.3 HPDB3J-14D Black 900 760-1000 0.39 30 10 10 0.5mw/ cm2 50 % (1.02)- 1.0 , 0.5mw/ cm2 20 8 Photodiodes Device No Lens Color Sensitive Wavelength Open Circuit Dark Current (MAX , -14D-B Black 900 760-1000 0.39 30 10 10 10 0.5mw/ cm2 30 4.5+0.2 1.0 min-cathode T~ IN^ 0.7max 0.5:1:0.1 -Max 1.0 not soldered HPDB5K-15A Black 900 760-1000 0.35 30 10 20 10 0.5mw/ cm2 120 5.0±0.2, il" 0.7max


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PDF 1000LUX HPDB1-48D HPDB1b-48D HPDB3J-14D HPDB3b-14D HPDB5-14D-B HPDB5K-15A HPDR3K-15A HPDR3K-45A hpdb5
2004 - VN800S-E

Abstract: VN800PT IEC1131 VN800PT-E VN800PTTR-E VN800STR-E VN800PTTR
Text: 80 75 70 0 0.5 1 1.5 2 2.5 PCB Cu heatsink area ( cm^2 ) 15/24 VN800S-E , 60 50 40 30 20 10 0 0 2 4 6 PCB Cu heatsink area ( cm^2 ) 16/24 8 10 , 0.5 cm2 100 2 cm2 10 1 0.1 0.0001 0.001 0.01 0.1 1 T ime (s) Figure 30 , C3 C4 C5 C6 R1 R2 R3 R4 R5 R6 Pd T_amb Area/island ( cm2 ) R1 (°C , Junction Ambient Single Pulse ZTH (°C/W) 1000 100 0.44 cm2 6 cm2 10 1 0.1 0.0001


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PDF VN800S-E VN800PT-E 2002/95/EC VN800S-E VN800PT IEC1131 VN800PT-E VN800PTTR-E VN800STR-E VN800PTTR
2002 - 8961

Abstract: ISO7637 VN800PT VN800S
Text: circuit board with 0.5 cm2 of copper area (at least 35µ thick) connected to all VCC pins. (*) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35µ thick). ELECTRICAL , 1.5 PCB Cu heatsink area ( cm^2 ) 14/22 2 2.5 VN800S(8961) / VN800PT(8961) PPAK , 6 8 10 PCB Cu heatsink area ( cm^2 ) 15/22 VN800S(8961) / VN800PT(8961) PPAK Thermal Impedance Junction Ambient Single Pulse ZTH (°C/W) 1000 100 0.44 cm2 6 cm2 10 1 0.1


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PDF VN800S VN800PT ISO7637 8961
2002 - ISO7637

Abstract: VN800PT VN800S
Text: printed circuit board with 0.5 cm2 of copper area (at least 35µ thick) connected to all VCC pins. (*) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35µ thick). , 1.5 PCB Cu heatsink area ( cm^2 ) 14/22 2 2.5 VN800S(8961) / VN800PT(8961) PPAK , 6 8 10 PCB Cu heatsink area ( cm^2 ) 15/22 VN800S(8961) / VN800PT(8961) PPAK Thermal Impedance Junction Ambient Single Pulse ZTH (°C/W) 1000 100 0.44 cm2 6 cm2 10 1 0.1


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PDF VN800S VN800PT ISO7637
2003 - 8002TW

Abstract: TRANSISTOR sanken catalog
Text: exceed the ratings in momentary and stationary operations. *2: When mounted on glass-epoxy board 70 cm2 (copper foil area 30.8 cm2 ). *3: Limited by thermal protection. 2 qSPI-8001TW/SPI , -8001TW/SPI-8002TW sThermal Deratings 3.5 j-a (Copper Foil Area) 35.8°C/W (30.8 cm2 ) Power Dissipation PD (W) 3.0 PD = VO·IO 38.2°C/W (15.6 cm2 ) 42.6°C/W (8.64 cm2 ) 100 VO ­1 ­ VF·IO 1 , : D1 Forward Voltage SFPB-66···0.45V (IO=1A) 52.3°C/W (3.34 cm2 ) 2.0 69.2°C/W (0.84 cm2 ) 1.5


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PDF qSPI-8001TW/SPI-8002TW SPI-8001TW/SPI-8002TW TYP80% SPI-8001TW) TYP78% SPI-8002TW) 8002TW TRANSISTOR sanken catalog
OPB715Z

Abstract: No abstract text available
Text: Current OPB716 OPB718 - - 100 100 µA µA VOH = 30 V, EE = 1 mW/ cm2 VOH = 30 V, EE = 0 , - V V IOH = -1 µA, EE = 1 mW/ cm2 IOH = -1 µA, EE = 0 VOL Low Level Output Voltage , / cm2 11.20 1.55 2 - EeT(+)/EeT(-) Hysteresis Ratio Notes: (1) (2) (3) (4) -


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PDF OPB715Z, OPB716Z, OPB717Z, OPB718Z OPB715Z limit20
2013 - Not Available

Abstract: No abstract text available
Text: €¢ TA = 25°C unless otherwise stated (1) Typical RθJA = 90°C/W on 1-inch2 (6.45- cm2 ), 2 , on FR4 material with 1-inch2 (6.45- cm2 ), 2-oz. (0.071-mm thick) Cu. Device mounted on FR4 material


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PDF CSD17381F4 SLPS411
2002 - IEC1131

Abstract: VN800PT VN800S
Text: mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35µ thick) connected to all VCC pins. (*) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35µ thick). , 2,5 PCB Cu heatsink area ( cm^2 ) 11/16 VN800S / VN800PT SO-8 MECHANICAL DATA DIM


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PDF VN800S VN800PT VN800S, VN800PT VN80f IEC1131 VN800S
2002 - Not Available

Abstract: No abstract text available
Text: cm2 of copper area (at least 35µ thick) connected to all VCC pins. (*) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35µ thick). ELECTRICAL CHARACTERISTICS (8V cm^2 ) 11/16 VN800S / VN800PT SO-8 MECHANICAL DATA mm. MIN. 0.1 0.65 0.35


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PDF VN800S VN800PT VN800S, VN800PT
2004 - Not Available

Abstract: No abstract text available
Text: / cm2 λp=940nm Ee=1m W/ cm2 λp=940nm Ee=1m W/ cm2 λp=940nm VR=5V Ee=0m W/ cm2 VR=10V Ee=0m W/ cm2 IR=100μA Ee=0m W/ cm2 VR=3V f=1MHZ VR=10V RL=1KΩ μA 10.2 18 - - 5


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PDF PD438B/S46 PD438B/S46 DPD-043-002 PD438B/
Supplyframe Tracking Pixel