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2N5531

Abstract: SOLITRON 10MHZ 2N5527 BR100A BR101A SOLITRON DEVICES
Text: SOLITRON DEVICES INC ' DFJ fl3bflb02 DDünSb b r-ll-cs' _ _RADIATION RESISTANT NPN SILICON POWER TRANSISTORS BR100A BR101A NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 5 AMPERES APPLICATIONS POWER AMPLIFIER RADIATION ENVIRONMENTS ULTRA HIGH FREQUENCY FEATURES MEDIUM POWER RADIATION EXPOSURE LEVEL TO 3x10l4n/ Cm2 TOTAL NEUTRON FLUX EQUIVALENT TO 1 MEV TO-5 ABSOLUTE MAXIMUM RATINGS , 2N5527 2N5531. (1): Pulsed 300/tsac; 254 Duty Cycle Note 2: After exposure, 1 x 10"n/ Cm2 , Flux 1MEV


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PDF fl3bflb02 BR100A BR101A 3x10l4n/Cm2 BR100A 2N5531 SOLITRON 10MHZ 2N5527 BR101A SOLITRON DEVICES
FPBS-04A

Abstract: barometer sensor FPBS-82A DSA0014362
Text: 82A unit 905.5 8.2 101.3 905.5 kPa. abs kg/ cm2 . abs kPa. abs Absolute pressure 434.7


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PDF FPBS-04A FPBS-82A FPBS-04A barometer sensor FPBS-82A DSA0014362
1999 - SPN02N60S5

Abstract: 02N60S5 VPS05163 GPS05560
Text: K/W @ min. footprint - 110 - @ 6 cm2 cooling area 2) - - 70 Static , epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical


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PDF SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 SPN02N60S5 02N60S5 VPS05163 GPS05560
1999 - SPN02N60S5

Abstract: No abstract text available
Text: version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJS RthJA 110 30 Symbol min , 1current limited by T jmax 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick


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PDF SPN02N60S5 OT-223 VPS05163 Q67040-S4207 02N60S5 SPN02N60S5
SI-1125HD equivalent

Abstract: mosfet 257A
Text: for 1E13 Neutrons/ cm2 Usable to 1E14 Neutrons/ cm2 Typically Survives 1E5 lons/ cm2 Having an LET £ 35MeV/mg/ cm2 and a Range 2 30 m at 80% BVqss · Gamma Dot · Photo Current · Neutron · Single Event , hardness ranging from 1E13n/ cm2 for 500V product to 1E14n/ cm2 for 100V product. Dose rate hardness (GAMMA


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PDF -204A -254A -257A -258AA 10kRAD 10OOkRAD MIL-S-19500, MIL-S-19500. SI-1125HD equivalent mosfet 257A
2010 - Not Available

Abstract: No abstract text available
Text: ‚®ãƒ¼: 4.8 µW/ cm2 チョッピング周波数: 600 Hz 周波数帯域: 60 Hz 20 0 0 1 , S 2 10 102 光源: 黒体炉 500 K 入射エネルギー: 4.8 µW/ cm2 , ¦ S/N (相対値) 光源: 黒体炉 500 K 入射エネルギー: 4.8 µW/ cm2 å°åŠ é›»åœ§: 15 V , -7 10 -6 10 -5 10 入射光量 (W/ cm2 ) 受光面の全面に照射ã


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PDF P2532-01, P2682-01 KIRD1019J07
TA7291

Abstract: TA7291S toshiba ta7291 TA7291P JA7291 TA7291F
Text: © INFINITE HEAT SINK © 80 cm2 x 2 mm Ai HEAT SINK «?HS = 6°C/W) 15 cm2 x 2 mm Aü HEAT SINK «?HS = 20 , TEMPERATURE Ta (°C) t - Rth © INFINITE HEAT SINK INPUT PULSE ® 80 cm2 x 2 mm A£ HEAT SINK cm2 x 2


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PDF TA7291P/S/F TA7291P, TA7291S, TA7291F TA7291 HSOP16-P-300-1 HSIP10-P-2 98091t TA7291S toshiba ta7291 TA7291P JA7291 TA7291F
Not Available

Abstract: No abstract text available
Text: TA7291P TA7291P Rth Ta © INFINITE HEAT SINK 80 cm2 x 2 mm A f HEAT SINK (#HS = 6°C/W) 15 cm2 x 2 mm A ß HEAT SINK (#HS = 20°C/W) o s- < NO HEAT SINK tfj_a = 65°C/W 50


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PDF TA7291 TA77Q1P TA77Q1Â TA77Q1F TA7291P/S/F HSIP10-P-2 HSOP16-P-300-1
3852r

Abstract: 2N5530 2N5529 SOLITRON 10MHZ BR100E BR100F BR101E BR101F
Text: _8368602 SOLITRQN DEVICES INC_66C 01930 D T,"33-il_ _ RADIATION RESISTANT NfN b/L/ÜON POWER TRANSISTORS Tb DEBa3fc,flboa □□□wo a I ■1 BR100E BR100F* BR101E BR101F* NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 10 AMPERES APPLICATIONS POWER AMPLIFIER RADIATION ENVIRONMENTS ULTRA HIGH FREQUENCY FEATURES HIGH POWER RADIATION EXPOSURE LEVEL TO 3x10l4n/ Cm2 TOTAL NEUTRON FLUX EQUIVALENT TO 1 MEV •T0-61/I ABSOLUTE MAXIMUM RATINGS BR100E BR101E BR100F* BR101F* vCBO


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PDF 33-il_ BR100E BR100F* BR101E BR101F* 3x10l4n/Cm2 T0-61/I BR100E BR101E 3852r 2N5530 2N5529 SOLITRON 10MHZ BR100F BR101F
2004 - Not Available

Abstract: No abstract text available
Text: - - V IC=0.1mA Ee=0mW/ cm2 V(BR)ECO 5 - - V IR=0.1mA Ee=0 mW/ cm2 VCE(SAT) - - 0.5 V IC=0.1 mA Ee=1.0 mW/ cm2 Tr - 15 - μS Vcc=5V RL , - 100 nA VCE=10V Ee=0 mW/ cm2 On State Collector Current IC(ON) - 19 - mA VCE=5V Ee=1.0mW/ cm2 Fall Time Typical Optical-Electrical Characteristic Curves FIG.1 Dark


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PDF BPT-BP2314 BPT-BP2314 500pcs
ta7291s

Abstract: No abstract text available
Text: SINK 80cmZ XZimn A £ HEAT SINK 25 cm2 X 2mm A i HEAT SINK NO HEAT SINK NO HEAT SINK (6a g = 2


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PDF TA7291P/S TA7291P/S TA7291P) TA7291S) A7291P/TA7291 ta7291s
3852r

Abstract: 2N5529 BR101C 2n5530 bR100C
Text: : After exposure, 1 x 1 0 14 n/ Cm2 , Flux 1MEV. 37


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PDF BR100C BR101C 14n/Cm O-111 10MHZ) 2N5529 2N5530* 2N5533 3852r BR101C 2n5530 bR100C
1999 - SPN02N60S5

Abstract: No abstract text available
Text: PCB: @ min. footprint @ 6 cm2 cooling area 1) Linear derating factor Soldering temperature, 1.6 mm


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PDF SPN02N60S5 OT-223 VPS05163 Q67040-S4207 02N60S5 SPN02N60S5
Not Available

Abstract: No abstract text available
Text: - 940 - nm IC=100 A Ee=0mW/ cm2 30 - - V 5 - - V , Saturation Voltage VCE(sat) IC=2mA Ee=1m W/ cm2 - - 0.4 V Collector Dark Current ICEO VCE=20V Ee=0mW/ cm2 - - 100 nA On State Collector Current IC(ON) VCE=5V Ee=1mW / cm2 1.0 1.5 - mA - 15 - - 15 - Rise Time tr Fall Time tf Everlight Electronics Co., Ltd. Device No DTT-091-004 IE=100 A Ee=0mW/ cm2


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PDF PT91-21C/TR7 PT91-21C/TR7 DTT-091-004
OP140

Abstract: OP240 OP550 OP550A OP550B OP550C OP550D
Text: 0.25 0.25 1.30 2.55 2.40 4.70 mA mA mA mA Vce = 5.0 V, Ee = 1.0 mW/ cm2 (3) Alc/AT Relative lc Changes with Temperature 1.00 %/°C Vce = 5.0 V, Ee = 1.00 mW/ cm2 , X = 935 nm iceo Collector Dark Current , Saturation Voltage 0.40 V lc = 100 jiA, Ee = 1.0 mW/ cm2 (3) Typical Performance Curves Normalized


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PDF OP550A OP550A, OP550B, OP550C, OP550D OP550 OP140 OP240 f-100 0P290C OP550B OP550C OP550D
VTT3323LA

Abstract: VTT3324LA VTT3325LA
Text: / cm2 ) VCE = 5.0 V H= =0 lc =100 ^A H=0 IE =100 /¡A H=0 lc =1.0 mA H=400fc lc =1.0 mA Rl=100Q (nA


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PDF 0G01172 VTT3323LA, T-41-61 VTE33xxLA 400fc VTT3323LA VTT3324LA VTT3325LA
1999 - 02N60S5

Abstract: SPN02N60S5 VPS05163
Text: @ min. footprint - 110 - @ 6 cm2 cooling area 1) - - 70 - - 260


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PDF SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 02N60S5 SPN02N60S5 VPS05163
1999 - 02n60s5

Abstract: SPN02N60S5 VPS05163 02N6
Text: @ min. footprint - 110 - @ 6 cm2 cooling area 1) - - 70 - - 260


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PDF SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 02n60s5 SPN02N60S5 VPS05163 02N6
1999 - 02N60C3

Abstract: marking code V6 DIODE 02N60 DSA003761 DIN 6784 SPN02N60C3 VPS05163
Text: - @ min. footprint - 110 - @ 6 cm2 cooling area 1) - - 70 - - 260


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PDF SPN02N60C3 OT223 Q67040-S4553 VPS05163 02N60C3 02N60C3 marking code V6 DIODE 02N60 DSA003761 DIN 6784 SPN02N60C3 VPS05163
iskra diode

Abstract: BY02A 80C1500 bridge B125 B125 bridge diode BY-02A c1500 bridge ISKRA C1500 80C800
Text: plate 200 cm2 t = 8.3 ms Ù, = 25 °C (V) (V) (A) (A) (M) (O) (A) (°C) B 40 C 3 200/2 200 B 80 C


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PDF 40C800 80C800 B250C800 B380C800 40C1000 80C1000 B125C1000 B250C1000 B380C1000 C1500 iskra diode BY02A 80C1500 bridge B125 B125 bridge diode BY-02A c1500 bridge ISKRA
1999 - Not Available

Abstract: No abstract text available
Text: x 56 mm (7.9 x 2.5 x 2.3 in) Pressure Readings (Selectable): mBar/Bar, kPa, kgf/ cm2 , psi, InHg


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PDF CLB-PM-602-602 24Volt, Pt100
J133

Abstract: Telefunken Electronic FLL100 a 4712 114144 BPW39 W-25 AL6G TD-325 COX-18
Text: 30 40 50 60 70 "C 0 20 40 60 80 mA 0.001 0.01 0.01 0.1 mW/ cm2 0 4 8 12 16 V 66 1221 Câ


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PDF 0001141b BPW39 10B3DIN41868 J133 Telefunken Electronic FLL100 a 4712 114144 BPW39 W-25 AL6G TD-325 COX-18
2004 - Not Available

Abstract: No abstract text available
Text: exposure [Typ. ArF excimer laser, 0.1 mJ/ cm2 /pulse, f=100 Hz, λ=193 nm, pulse width=15 ns (FWHM


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PDF S9682, S9683 S9682 S9683 S9682: S9683: SE-171 KSPD1069E02
2011 - Not Available

Abstract: No abstract text available
Text: エキシマレーザ, 0.1 mJ/ cm2 /パルス, f=100 Hz, λ=193 nm, パルス幅=15 ns (FWHM)] 120 相対感度 (%


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PDF S9682, S9683 S9682: S9683: KSPD1069J03
1999 - SPN03N60S5

Abstract: No abstract text available
Text: version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJS RthJA 110 25 Symbol min , 1current limited by T jmax 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick


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PDF SPN03N60S5 OT-223 VPS05163 Q67040-S4203 03N60S5 SPN03N60S5
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