The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
0402HP-5N6XJEW 0402HP-5N6XJEW ECAD Model Coilcraft Inc General Purpose Inductor, 0.0056uH, 5%, 1 Element, Ceramic-Core, SMD, 0402, CHIP, 0402, HALOGEN FREE AND ROHS COMPLIANT
0402HP-1N0XJEU 0402HP-1N0XJEU ECAD Model Coilcraft Inc General Purpose Inductor, 0.001uH, 5%, 1 Element, Ceramic-Core, SMD, 0402, CHIP, 0402, HALOGEN FREE AND ROHS COMPLIANT
0402HP-10NXJEU 0402HP-10NXJEU ECAD Model Coilcraft Inc General Purpose Inductor, 0.01uH, 5%, 1 Element, Ceramic-Core, SMD, 0402, CHIP, 0402, HALOGEN FREE AND ROHS COMPLIANT
0402HP-11NXJEU 0402HP-11NXJEU ECAD Model Coilcraft Inc General Purpose Inductor, 0.011uH, 5%, 1 Element, Ceramic-Core, SMD, 0402, CHIP, 0402, HALOGEN FREE AND ROHS COMPLIANT
0402HP-7N5XJEU 0402HP-7N5XJEU ECAD Model Coilcraft Inc General Purpose Inductor, 0.0075uH, 5%, 1 Element, Ceramic-Core, SMD, 0402, CHIP, 0402, HALOGEN FREE AND ROHS COMPLIANT
0402HP-15NXJEU 0402HP-15NXJEU ECAD Model Coilcraft Inc General Purpose Inductor, 0.015uH, 5%, 1 Element, Ceramic-Core, SMD, 0402, CHIP, 0402, HALOGEN FREE AND ROHS COMPLIANT

0402-7+NPO+50 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
62 01071

Abstract: 3019 Transistor BRF510 Bipolarics* BRF510 03-198 transistor 1047 IC 4027 TRANSISTOR 4841 ic 7413 datasheet c 3198 transistor
Text: compression: f = 1.0 GHz dBm 15 NF Noise Figure: VCE =8V, I C = 2mA f = 1.0 GHz ZS = 50 , Cutoff Current 17.5 18.1 12.8 12.6 50 250 µA : VCB =8V 0.2 Emitter Cutoff Current , 49 50 51 53 55 57 60 61 0.9549 0.9120 0.8511 0.8511 0.7161 0.6998 0.6531 0.6165 , -46 - 50 -52 -58 -60 -62 -67 -70 -75 -79 -83 -86 -88 -99 21.6 20.4 18.9 17.2 16.2 , 0.3548 -17 -30 -36 -40 -39 -42 -49 - 50 -52 -53 -58 -62 -64 -70 -71 -76 -75 -84 -90


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PDF BRF510 BRF510is BRF510an OT-23, OT-143, unencapsulate74 62 01071 3019 Transistor BRF510 Bipolarics* BRF510 03-198 transistor 1047 IC 4027 TRANSISTOR 4841 ic 7413 datasheet c 3198 transistor
04773

Abstract: DC90 GLAR94001 CAS140 CAS-140B 03219
Text: Diagram IF = 100 Ta = R.T 50 80 90 80 70 70 60 60 40 30 20 10 0 100 80 60 40 20 100 400 500 600 700 Wave Length (nm) 800 Y X 50 40 30 20 0 10 0 20 40 60 80 100 , life test 25±3, DC120 500 h 50 High Temperature humidity life test 60±3, 95%±2%RH, DC90 500 h 50 High Temperature life test 85±3, DC50 500 h 50 Low Temperature life test -30±3, DC120 500 h 50 High Temperature Storage Ta=100±3 500 h 22


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PDF LEDRR-08326846 SLTCRI2502AN SLTCRI2502AN) 04773 DC90 GLAR94001 CAS140 CAS-140B 03219
ic 4027

Abstract: 3019 npn transistor transistor 30 j 124 7498 ic Silicon Bipolar Transistor 35 MICRO-X transistor s parameters noise B12V105 ic 4027 information microwave transistor SOT-23J
Text: dBm 15 NF Noise Figure: VCE =8V, I C = 2mA f = 1.0 GHz ZS = 50 dB 1.6 hFE , = 10 mA I C = 25 mA f = 2.0 GHz, I C = 10 mA IC = 25 mA Collector Cutoff Current 50 100 , 0.1333 0.1348 0.1380 Mag Ang 80 76 61 59 53 51 48 47 46 46 45 46 48 49 50 51 53 , 0.3890 0.3981 0.3870 0.3801 Mag Ang -14 -25 -31 -36 -38 -40 -48 -46 - 50 -52 -58 -60 , -30 -36 -40 -39 -42 -49 - 50 -52 -53 -58 -62 -64 -70 -71 -76 -75 -84 -90 -86 -94


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PDF B12V105 B12V105 OT-23, OT143, unencaps143 ic 4027 3019 npn transistor transistor 30 j 124 7498 ic Silicon Bipolar Transistor 35 MICRO-X transistor s parameters noise ic 4027 information microwave transistor SOT-23J
2001 - VCR7N

Abstract: AN105 Siliconix JFET
Text: No file text available


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PDF S-04027--Rev. 04-Jun-01 VCR7N AN105 Siliconix JFET
2003 - MLN2027F

Abstract: 5888 ASI10630
Text: MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 50 V BVCEO IC = 5.0 mA 20 V BVEBO IE = 1.0 mA 3.5 V ICEO VCE = 18 V hFE VCE = 5.0 V COB VCB = 28 V PG , PARAMETERS: ZO = 50 VCE = 15 V, IC = 160 mA, TA = 25°C FREQ. S21 S12 S11 S22 GHz dB


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PDF MLN2027F MLN2027F 5888 ASI10630
2004 - Not Available

Abstract: No abstract text available
Text: „¦ Max RDC IRATE mA Max 7 11 17 19 26 31 36 50 60 66 68 70 80 110 120 150 180


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PDF 04E-MOUNT
2008 - Date code samsung resistors

Abstract: No abstract text available
Text: Per Chip. 50 2). Peak Pulsed Forward Current Per Chip. 60 (Duty 1/10 Pulse Width , ) 800 Radiation Diagram IF = 100 Ta = R.T 50 40 30 20 10 0 100 80 60 40 20 80 90 80 70 70 60 60 Y X 50 40 30 20 0 10 0 20 40 60 80 100 Relative Luminous Intensity(%) SAMSUNG , %RH Peak 260±5 for 10sec Sample No 50 50 50 50 22 22 22 50 22 22 ESD(HBM) 5 times 5 -R1:10M , R2:1.5K , C:100pF On/Off test 50±3, 95%±2%RH, DC120 , On/2sec, Off/2sec 108000 cycles 50 SAMSUNG


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PDF SLTCRI2502ANMARS SLTCRI2502ANMARS) Date code samsung resistors
2011 - PLCC5630-W3

Abstract: SMD LEDs
Text: X=0.43 Y=0.40 - 50 % Power Angle 2θ½ IF = 120 mA - 120 - Deg , ) 150 125% 120 100% 90 75% 60 50 % 30 25% 0 2.8 2.4 3.2 If(mA , 120 140 160 180 200 Relative Luminous Intensity vs. Forward Current 100% 200% 100% 50 % 50 , . Ambient Temperature If(mA) 250 100% 200 150 50 % 100 50 0 Ta( ) 0 20 40 60


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PDF PLCC5630-W3 dime1500pcs 3000pcs 1500pcs) PLCC5630-W3 SMD LEDs
Not Available

Abstract: No abstract text available
Text: temperature is -25°C and +85°C for 30 minutes for each 50 cycles · Operating Temperature: -25°C to +85°C ·


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PDF ACML-0402-5 ACML-0402-7 ACML-0402-11 ACML-0402-19 HP4291A
2013 - PLCC2835-W3-1W

Abstract: WG1 smd
Text: No file text available


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PDF PLCC2835-W3-1W PLCC2835-W3-1W WG1 smd
Not Available

Abstract: No abstract text available
Text: HUBER+SUHNER® DATA SHEET Coaxial Cable: G_03332 Rev.: I Description Triax - PE - 50 Ohm , RAL 9005 - bk Copper Braid, 91 % PVC RAL 9005 - bk HUBER+SUHNER G 03332 50 Ohm (PA no , effectiveness Max. operating voltage Test voltage 50 1 100.7 66 5.02 1 x > 40 2.5 5 Mechanical Data Weight Min. bending radius static repeated (for max. 50 bendings) dynamic , (up to 1 GHz) kVrms (at sea level) kVrms ( 50 Hz/1 min) kg/100 m mm mm mm G_03332 Ordering


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PDF Strand-07 DOC-0000178002
2004 - Not Available

Abstract: No abstract text available
Text: 100 50 50 50 50 0.04 0.04 0.04 0.05 0.05 0.06 0.06 0.06 0.06 0.10 0.12 0.18 0.25


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PDF ACML-0402, ACML-0402-5 ACML-0402-7 ACML-0402-11 ACML-0402-19 ACML-0402-31 ACML-0402-60 ACML-0402-80 ACML-0402-120 ACML-0402-180
2003 - MLN2037F

Abstract: D 5888 s transistor 1548 b D 5888 equivalent transistor c 5888 ASI10635
Text: 45° CHAMFER C E · Class A Operation · PG = 5.0 dB at 5.0 W/2.0 GHz · OmnigoldTM , N TSTG .003 / 0.08 M BVCEO IC = 50 mA BVCER IC = 50 mA BVEBO IE = 10 mA ICES VE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V PG VCE = 20 V POUT = 5.0 W , ICQ = 800 mA f = 2.0 GHz 5.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL , SOURCE NOT FOUND. MLN2037F TYPICAL S PARAMETERS: ZO = 50 VCE = 15 V, IC = 160 mA, TA = 25°C FREQ


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PDF MLN2037F MLN2037F D 5888 s transistor 1548 b D 5888 equivalent transistor c 5888 ASI10635
2002 - h431

Abstract: ACML-0402-11
Text: 1200 1500 2000 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 50 50 50 50 0.04 0.04 0.04 0.05 0.05 0.06 0.06 0.06 0.06 0.10 0.12 0.18 0.25 0.25 0.25 0.30 0.30 0.40 0.40


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PDF ACML-0402, ACML-0402-5 ACML-0402-7 ACML-0402-11 ACML-0402-19 ACML-0402-31 ACML-0402-60 ACML-0402-80 ACML-0402-120 ACML-0402-180 h431
ba7 transistor

Abstract: MMIC Amplifier Micro-X Bipolarics BA11 sot-143 rf amplifier
Text: for general purpose use in 50 systems over a frequency range from less than 100 KHz to greater than , Id = 35 mA, ZIN = ZOUT = 50 unless stated UNITS Small signal gain ( |S 21 2 | ): Dice SOT , 19.0 NF 50 Noise Figure: f = 1.0 GHz dB 4.5 Vd Device Voltage (Pin 3) Ceramic , Current Power Dissipation (2) (3) RF Input Power Junction Temperature Storage Temperature Pkg 50 , 79 0.1698 33 1.9724 70 0.1949 47 1.7579 59 0.2065 48 1.4962 56 0.2398 50 S11 Mag


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PDF OT-143 OT-143J ba7 transistor MMIC Amplifier Micro-X Bipolarics BA11 sot-143 rf amplifier
2007 - ACML-0402-11

Abstract: ACML-0402-1500 ACML-0402-100
Text: No file text available


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PDF ACML-0402 ACML-0402-5 ACML-0402-7 ACML-0402-11 ACML-0402-19 ACML-0402-31 ACML-0402-60 ACML-0402-80 ACML-0402-120 ACML-0402-180 ACML-0402-1500 ACML-0402-100
2004 - ACML-0402-5

Abstract: No abstract text available
Text: mA Max 7 11 17 19 26 31 36 50 60 66 68 70 80 110 120 150 180 220 300 500 600


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PDF ACML-040-MOUNT ACML-0402-5
2001 - ACML-0603-300

Abstract: ACML-0603-31
Text: No file text available


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PDF ACML-0402-5 ACML-0402-7 ACML-0402-11 ACML-0402-19 ACML-0402-31 ACML-0402-60 ACML-0402-80 ACML-0402-120 ACML-0402-180 ACML-0402-300nation ACML-0603-300 ACML-0603-31
LBT08015

Abstract: No abstract text available
Text: Bandwidth MHz 4.1 4.16 - 50 dB Bandwidth MHz - 5.18 5.2 Passband Variation dB - 0.6 1 Absolute Delay usec - 3.73 3.75 Ultimate Rejection dB 50 , www.sipatsaw.com Matching Configuration L1 INPUT 50 L2 L1=L2=82nH OUTPUT 50 C1=91pF Source/Load Impedance= 50 ohm C1 Notes - Component values may change depending on board layout. Package , 84 +j5.0 0.0 0.5 -j5.0 -j0.2 +j2.0 +j0.2 0.2 5.0 2.0 1.0 0.5


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PDF 80MHz LBT08015 2002/95/EC) 10deg/Div LBT08015
nissei RF-MF5010

Abstract: RF-MF5010 CXN-3011 FL-LP-066
Text: Value Characteristic impedance 50 Q Insulation resistance 500 M Q or greater at 100 V DC Contact , Contact life 50 times V.S.W.R. 1.3 or less from DC to 2,000 MHz 215 PRODUCT INFORMATION Right-angle


OCR Scan
PDF RF-MF5010 4-36UNS-2A CL331-0416-1 nissei RF-MF5010 CXN-3011 FL-LP-066
78M03S

Abstract: 76MRSB05S a/76mrsb08s
Text: No file text available


OCR Scan
PDF MS83504 M83504/01-022 M83504/01-023 M83504/01-024 M83504/01-025 M83504/01-026 M83504/01-027 M83504/01-028 M83504/01-029 78M03S 76MRSB05S a/76mrsb08s
MMIC Amplifier Micro-X

Abstract: GHZ micro-X Package BA11 rf microwave amplifier with S Parameters 03-198
Text: performance MMIC amplifier designed for general purpose use in 50 systems over a frequency range from less , . PARAMETERS/CONDITIONS Id = 35 mA, ZIN = ZOUT = 50 unless stated UNITS MIN TYP MAX 11.5 , 1.0 GHz dB +23.0 NF 50 Noise Figure: f = 1.0 GHz dB 6.0 Vd Device Voltage (Pin 3) Volts 4.0 5.0 6.0 Id Normal Operating Current mA 20.0 35.0 50.0


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PDF
78M03

Abstract: MILITARY QUALIFIED DIP SWITCHES 78M07 m83504 M83504/01-028 78m03s single pole single throw 78M08S 78M06S 78M02S
Text: No file text available


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PDF MS83504 M83504/06-022 M83504/06-023 M83504/06-024 76MRSC02S 76MRSC03S 76MRSC04S 78M03 MILITARY QUALIFIED DIP SWITCHES 78M07 m83504 M83504/01-028 78m03s single pole single throw 78M08S 78M06S 78M02S
TRANSISTOR zo 109 ma

Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor
Text: 70 68 65 61 55 55 50 47 45 40 41 33 33 35 26 PAGE 3 BIPOLARICS, INC. Part , 50 35 35 9 -2 -14 Ang -102 -136 -145 -155 -155 -159 -169 -164 -168 -168 178 180 , 5.0 MIN (ALL LEADS) 0.5+0.07 45 1.0+0.1 +0.06 0.1 -0.03 2.5 +0.4 -0.2 +0.4 -0.3


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PDF B15V140 B15V140 OT-223 OT-103 TRANSISTOR zo 109 ma transistor zo 109 transistor 86 IC 7585 midium power uhf transistor microwave transistor ZO 109 transistor
06309

Abstract: B12V114
Text: 0.1698 0.1778 0.1927 59 56 50 52 55 56 58 59 60 58 60 62 64 65 66 67 68 69 68 72 , - 50 -54 -52 -52 -63 -61 -63 -65 -75 -79 -86 -93 -97 -106 -111 -123 -132 -127 -132


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PDF B12V114 B12V114 06309
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