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1RF7501

Abstract: C202 diode
Text: International IQ R Rectifier · · · · · · · Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1 mm) Available in Tape and Reel Fast Switching PD-9.1265G IRF7501 HEXFET® Power MOSFET V = dss 20V f^DSion) = 0.135Q Description Fifth Generation HEXFET® Power Mosfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast


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PDF 1265G IRF7501 C-202 1RF7501 C-203 1RF7501 C202 diode
Not Available

Abstract: No abstract text available
Text: 4302571 0 0 5 4 7 5 ‘ï LT? ■HAS Î H R IS RFD12N06RLE, RFD12N06RLESM H A R U U RFP12N06RLE S E M , C O N D U C T O R Jan ary1994 u N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors (MegaFETs) Features Packages • 12A,60V • r DS(on) RFD12N06RLE (TO-251) TOP VIEW * 0.135Q 3 SOURCE • Electrostatic Discharge Rated DRAIN TAB' 3 DRAIN • UIS SOA Rating Curve (Single Pulse) • Design Optimized for 5V Gate Drive • Can be


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PDF RFD12N06RLE, RFD12N06RLESM RFP12N06RLE ary1994 RFD12N06RLE O-251) O-252) AN7254 AN-7260.
IRF7501

Abstract: appendix c package drawing 182 DIODE SMD MARKING CODE gi
Text: = 20V ^DS(on) = 0.135Q Parameter Max. Units ld @ TA = 25°C Continuous Drain Current, Vqs @ 4.5V


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PDF 1265D IRF7501 appendix c package drawing 182 DIODE SMD MARKING CODE gi
CLC424

Abstract: No abstract text available
Text: -i d dd 0 .0 3 3 ± 0 .0 1 3 i 0135±Q .Q 15[ 0 25 i 0.03 t- 1 H - if * 0 .0 1 8 h 0 .3 7 5 ± 0 .0 1 0


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PDF 180MHz 000V/jus 20MHz CLC424 180MHz. CLC424A8/AL/AM
Not Available

Abstract: No abstract text available
Text: International ICR Rectifier · · · · · · · Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1 mm) Available in Tape and Reel Fast Switching PD - 9.1266G IRF7503 HEXFET® Power MOSFET Vqss = 30V ^ D S (o n ) = 0.135Q Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, com bined with the fast


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PDF 1266G IRF7503 10msj
MOSFET SMD N-Channel 30V 0.85A

Abstract: MOSFET SMD N-Channel 30V 100A P-CHANNEL MOSFET SMD MARKING CODE YA IRF7509 smd MARKING GG ld085
Text: portable electronics and PCMCIA cards. Absolute Maximum Ratings N-Ch P-Ch Vdss RpS(on) 30V 0.135Q -30V


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PDF 1270C IRF7509 MOSFET SMD N-Channel 30V 0.85A MOSFET SMD N-Channel 30V 100A P-CHANNEL MOSFET SMD MARKING CODE YA smd MARKING GG ld085
diode marking OX

Abstract: No abstract text available
Text: International IG R Rectifier · · · · · · · Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1 mm) Available in Tape & Reel Fast Switching PD - 9.1266G IRF7503 HEXFET® Power MOSFET VDSS = 30V ^DS(on) *= 0.135Q Description Frfth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and


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PDF 1266G IRF7503 EIA-541. diode marking OX
Not Available

Abstract: No abstract text available
Text: PD - 9.1266G International I©R Rectifier IRF7503 HEXFET® Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N-Channel M O SFET • Very Small SOIC Package • Low Profile (<1.1 mm) • Available in Tape & Reel • Fast Switching si o r /tH ^ ;J g ì o r S2 n r G2 o r 2 Vdss= 30V _7 3 4 _5 ^ D S (o n) = 0.135Q Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to


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PDF 1266G IRF7503 4A5545E
p-ch mosfet smd MARKING code A

Abstract: Diode SMD SJ 66A IRF7507 smd diode MARKING F6 p-ch mosfet smd MARKING code 1 A smd diode F6 DIODE SMD MARKING CODE gi smd marking code 21b diode smd code F6
Text: portable electronics and PCMCIA cards. Absolute Maximum Ratings N-Ch P-Ch Vdss rds(on) 20V 0.135Q -20V


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PDF 1269C IRF7507 p-ch mosfet smd MARKING code A Diode SMD SJ 66A smd diode MARKING F6 p-ch mosfet smd MARKING code 1 A smd diode F6 DIODE SMD MARKING CODE gi smd marking code 21b diode smd code F6
ic 067b

Abstract: transistor P1M HIP2060 rs20e
Text: Voltage to 60V · r[js(O N ) · r[)s(ON) 0.135Q Max Per Transistor at Vq s = 15V 0.15Q Max Per Transistor at


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PDF HIP2060 HIP2060 S-001AA ic 067b transistor P1M rs20e
Not Available

Abstract: No abstract text available
Text: P D - 9.1270F International l© R Rectifier IRF7509 PRELIMINARY HEXFET3 Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1 mm) Available in Tape & Reel Fast Switching UQ SFgT si o n an- N-Ch k lE D I P-Ch 30V -30V L Ì3 D D : gi S2 QE— Voss /TZS G2 a n - RüSion) 0.135Q 0.27Î2 D e scrip tio n T o p View Fifth


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PDF 1270F IRF7509 7355B
Not Available

Abstract: No abstract text available
Text: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY™ MOSFET and Schottky Diode Co-packaged HEXFET® Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an 4 t i « i ( i Vdss = 30V ID K 5 3D D RDS(on)= 0.135Q HDD Schottky Vf= 0.50V Top View Description The FETKY™ family of co-packaged HEXFETs and Schottky diodes offer


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PDF IRF7523D1 Rf7523d1 0D2B023
Diode SMD SJ 66A

Abstract: No abstract text available
Text: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKY™ MOSFET and Schottky Diode • • • • • Co-packaged HEXFET® Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint or n n k A rrr n n k h d d a Voss = 20V S CEE g o r K ÜL RüS(on) = 0.135Q nno Schottky V f= 0.50V Top View Description The FETKY™ family of co-packaged HEXFETs and


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PDF 5545S Diode SMD SJ 66A
IR 006

Abstract: IRF7521D1
Text: International lö R Rectifier · · · · · Co-packaged HEXFET® Power MOSFET and Schottky Diode N-Channel HEXFET Low Vp Schottky Rectifier Generation V T echnology Micro8 Footprint P D -9.1646 PRELIMINARY FETKYTM IRF7521D1 MOSFET and Schottky Diode V dss = 20 V R DS(on) = 0.135Q Schottky Vf= 0.50V Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize


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PDF IRF7521D1 IR 006 IRF7521D1
142235

Abstract: MCCS142235TM motorola 142235
Text: °C. Temperature coefficient of resistance T q = 0.135Q /3C typical. SCSI TERM INATORS BR U 86 11 M O


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PDF MCCS142235TM 18-bit MC34268) MCCS142235 110ra 18-bits BR1486 142235 motorola 142235
mccs142236

Abstract: No abstract text available
Text: at 35°C. Temperature coefficient of resistance Tq = 0.135Q /°C typical. MOTOROLA 4 MCCS142235


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PDF MCCS142235/D 18-Bit MCCS142235TM MC34268) MCCS142235 11Oil 18-bits 3PHX32017-1 mccs142236
Not Available

Abstract: No abstract text available
Text: mode, Igatechg = f(Qp)- The typical gate charge for a 0.135Q P-channel power MOSFET is 40nC. This


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PDF LTC1147-3 LTC1147 250kHz Standb175)
d2396

Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Text: Transistors Transistors Products Tables Surface mounting types M O S FET · Automatic mounting is possible : Products are housed in a package which supports automatic mounting. · 4V drive types : Direct drive from 1C allows reduction of components (elimination of buffer transistor). · Low ion-resistance : W e have obtained a low ion-resistance through optimization of the pattern design. 2SK2503 (ROHM : 60V, 5A) Rds m 0.135Q (Max.) Rds Previous product of same class (60V, 5A class) (o r


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PDF 2SK2503 RK7002 TC363TS DTC314TS TC114G 100mA TA124G DTC144G d2396 TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
027SS

Abstract: No abstract text available
Text: International IGR Rectifier · · · · · · · Generation V Technology Ultra Low On-Resistance Dual N and P Channel M OSFET Very Small SO IC Package Low Profile (<1.1 mm) Available in Tape and Reel Fast Switching PChanne) MOSFET PD * 9.1269G IRF7507 HEXFET® Power MOSFET s ta r G 1Q E 3 D D 1 N-Ch Voss PDS(on) P-Ch -20V 3 D Dl i n D2 HD D2 Channai MOSFET S2QX G 20r 20V 0.135Qj 0.27ß Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced


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PDF 1269G IRF7507 135Qj C-223 C-224 027SS
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