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Text: DAICO INDUSTRIES INC blE D ■ZbDMTEO 0001fl3D *122 ■DAI FEATURES ■Transim pedance Amplifier For W ide Band PIN FE T Receiver ■Low G ate Leakage Current, Typically 10nA At -5 Volts ■No Selection Required ■Low Cgs, Typically 0.4 pF ■Simplified Bonding GaAs MESFET For OPTO Receivers High Gm, Typically 45 mS ■MODEL NO. P35-1110 Clï ■General Purpose Amplifier In PIN FET Receiver DRAIN GATE SOURCE . DRAIN


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PDF 0001fl3D P35-1110 D4T50
X band attenuator

Abstract: 5V SPST RELAY P35-1110 gaas fet gm pin s for 5V DPDT RELAY GEC Marconi DA0035 DA0784-1 DA0786 DS0052
Text: DAICO INDUSTRIES INC blE D 0001fl3D 122 DAI features ■General Purpose Amplifier In PIN FET Receiver ■Transimpedance Amplifier For Wide Band PIN FET Receiver ■High Gm, Typically 45 mS ■Low Gate Leakage Current, Typically 10nA At -5 Volts ■No Selection Required ■Low Cgs, Typically 0.4 pF ■Simplified Bonding MODEL NO. p35-1110 GaAs MESFET For OPTO Receivers GATE 15 MILS _I n SOURCE DRAIN ; SOURCE GATE 16.5 MILS ELEMENT VALUE UNITS Rg 3.8 a Cgs 0.36 pF


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PDF 0001fl3D p35-1110 DS0990 DA0769 DA0996 X band attenuator 5V SPST RELAY P35-1110 gaas fet gm pin s for 5V DPDT RELAY GEC Marconi DA0035 DA0784-1 DA0786 DS0052
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