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Part Manufacturer Description Datasheet BUY
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC1611J/883B Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

zw 4.7 diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ® 3 *'-) T$$ R NWW T^ TFL _ PW T^ T$LA ` MWW T Inverse Diode IGBT Module Eb SK25GAD063T Y Y Eb[Â¥R P : Eb0%& Freewheeling Diode Eb C- R PO S$ C- R ZW S$ Eb[Â¥ CU R , IGBT T$LA CU R PO S$ E$ CU R XPO S$ Values Units T NW Y C- R ZW S$ E$[Â , C)(-, R PO S$ NM Y C)(-, R ZW S$ Preliminary Data CU R XOW S$ Y Pc Y Eb[Â , min. Units X@e T X@c X@e T W@ZO W@h T OO ZW &f CU R XPO S SEMIKRON
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Abstract: IGBT T$LA CU R PO S$ E$ CU R XPO S$ Values Units T PW Y C- R ZW S$ X[ Y NW Y ^ PW T CU R XPO S$ XW b- C- R PO S$ PW Y C- R ZW S$ E$ , Module *'-) T$$ R NWW T_ TFL ` PW T_ T$LA a MWW T Inverse Diode Ec CU R XOW S$ Ec , © by SEMIKRON SK15GH063 Characteristics Symbol Conditions Inverse Diode Tc R TL$ Ec0%& R , ZW &e CU R XPO S$ XN X@O Y b$ W@[O &g IGBT Module Ec R XW Y +.j+* R DPWW SEMIKRON
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ZW DIODE 5

Abstract: marking code 15b case. 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table , BZW50- 39 82 B ZW 5 0-10 B ZW 5 0-18 B ZW 5 0-39 B ZW 5 0-82 B ZW 5 0-180 Tj= 25 °C F = 1 MHz 1 , °C F = 1 MHz 10 1 B ZW 5 0-10B B ZW 5 0-18B B ZW 5 0-39B BZW 50-8 2B B ZW 5 0-180 B V R
STMicroelectronics
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BZW50 ZW DIODE 5 marking code 15b diode marking 100b UL497B E136224
Abstract: ® Conditions T= TSSQ ^22 X@Â¥U ML , 12 F ZLWW X@Â¥ U Y$` &- ',2 +.%+, ',2 &%+47, X-%7+,2 X@Â¥ *,2&.0(7-G ZW- &(;H MGL , Forward characteristics of single diode Fig. 4 Thermal transient impedance vs. time Fig. 6 Fig. 5 SEMIKRON
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Abstract: IGBT T$LA CU R PO S$ E$ CU R XPO S$ Values Units T NW Y C- R ZW S$ PX Y MW Y ] PW T CU R XPO S$ XW a- C- R PO S$ NM Y C- R ZW S$ E$[Â , T^ T$LA ` MWW T Inverse Diode IGBT Module Eb CU R XOW S$ Eb[Â¥ SK25GD063 Eb , Symbol Conditions Inverse Diode Tb R TL$ Eb0%& R PO Y^ TFL R W T min. max. Units X@cO , . 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 SEMIKRON
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ZW-101PG1

Abstract: LCD lg 500g monitor , ZW-101PG1, ZW -100LP2S as support tool. Procesure completed · This module is made in , monitoring are used. [Communication modules] ZW-20CM, ZW-20RS, ZW-1OCM, ZW-20CM2, ZW-30CM, ZW-98CM (version 3.0 or less), ZW -20AX(version 1.0) [Additional functions] 1. If the memory protect switch is ON, the , [1] JW series modules [2] ZW series modules 3-5 General specifications [1] When AC power is used , the 63K-word program memory (ZW-4MA, JW-4MAH) 4-4 Rack panel 4-25 4-25 4-29 [1] Rack panel type
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ZW-101PG1 LCD lg 500g monitor ET 439 power module fuji DUNT-5784NCZZ JW-12PM Fuse FGMB 250V 2A JW50H/70H/100H 70H/100H 50H/70H/100H
Abstract: IGBT T$LA CU R PO S$ E$ CU R XPO S$ Values Units T NW Y C- R ZW S$ PX Y MW Y ] PW T CU R XPO S$ XW a- C- R PO S$ NM Y C- R ZW S$ E$[ , NWW T^ TFL _ PW T^ T$LA ` MWW T Inverse Diode Eb CU R XOW S$ Eb[¥ SK25GH063 Eb[¥R , Diode Tb R TL$ Eb0%& R PO Y^ TFL R W T min. CU R PO S$)8.'7,QK typ. max. Units X@cO , resistor RG Fig. 10 CAL diode forward characteristic 4 13-02-2007 DIL © by SEMIKRON SEMIKRON
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jw-13pg

Abstract: Z-SM10 . This manual describes functions and usages of JW-31 LMH and I/O link slave module (ZW-82N/82S, ZW-164NH/162SH/162MH, ZW-324NH/322SH/322MH, and ZW-84NC/162MC). Beside this , .43 11-1 ZW , .52 11-2 ZW-161 N/162N/161 S/162S/164S , .61 11-3 ZW-164NH/162SH
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jw-13pg Z-SM10 TAJIMI jw-31lm JIS-C-0912 2SA 10G factory JW-31LMH IJW-31LMH ZW-82N/82S ZW-161N/162N/161S/162S/164S/162M ZW-164NH/162SH/162MH ZW-324NH/322SH/322MH

RV12P2000

Abstract: iw 1688 0.1 D Kw ZW ZW HA ET O H O HAN HA Kw H" Kw H H" M° HAN ETN EP D Kw ZW SEP SEP SEP 12,0 12,6 1.9 1.9 , 02 Pentode Pentode Pentode Pentode T r io d e Diode Diode Diode T riode Pen tode T r io d e T r io d e T r io d e T riode T r io d e T r io d e Pento de Hexode Pentode Diode HA HA HA HAK« AHN D Kw , n / rjh r« N =" N F -Vcrslirker-R ohre (Transform jtorkopplun«) ZW *= Zw «iw effletchriehle
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RV12P2000 RL12T1 RL12T15 iw 1688 ScansU9X22 rd 1679 RV209

fujikura fire resistance power cable

Abstract: JIS-C-0911 .33 Appendix M ZW-82N/ZW , .41 Appendix 1-2 ZW-161N/162N/161S/162S/164S , .53 Appendix 1-3 ZW-164NH/162SH , .69 Appendix 1-4 ZW-324NH/322SH , .78 Appendix 1-5 ZW
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fujikura fire resistance power cable JIS-C-0911 JW13PG 8 PIN RELAY 24V dc pla JIS C 0911 ZW31LM JW-23LMH JW20H/30H JW20H JW30H ZM-84NC/ZW-162MC

zw 4.7 diode

Abstract: DIODE 1N751A zw rar Diode* (Continued) POWER 500 mW CASE ZENER VOLTAGE 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 1N968B 1N969B 1N970B 1N967B 1N965B 1N966B 1N960B 1N961B 1N962B 1N963B 1N964B 1N759A 1N757A 1N758A 1N957B 1N958B 1N959B 1N753A 1N754A 1N755A 1N756A 1N4372A 1N746A 1N747A 1N748A 1N749A 1N750A 1N751A 1N752A 1N4371A DO-35 INDUSTRY STANDARD INDUSTRY STANDARD 1N4370A INDUSTRY STANDARD 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B
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1N5229B 1N5243B 1N5986B zw 4.7 diode DIODE 1N751A ZW 13 diode zener diode 1N5229B specifications 1N5227B 1N5228B 1N5230B 1N5231B 1N5232B

70481200

Abstract: BCM 5301 / /* \ ße» einigen Röhren/ypen is/ der Sockel zw ecks w irtschaftlic h e r Fertigung nur m ,t ein e r9e rin , e rö h re (Magisches Auge) Begrenzer H och fre q u e n zg le ich richte r (Diode) D is k rim in a to , L = r E in w e g -L a d e g le ich rich te r EW V = ZW = ZW H = ZW I = ZW L = Uf = If = U Tr , ) Speisung durch S p a n n u n g ste ile r(g Ie ite n d e S ch irm g itte rspannung) 20) Für zw ei Röhren bzw. zwei Systeme im G egentakt * 21) Zwischen Anode und Anode 22) Zw ischen G itte r und G itte r 23) G em
Contact Connectors
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70481200 BCM 5301 moeller mcs 11 bcm 7206 EPIC H-A 4 SS lapp A streetcar named desire free book D-70565

Telefunken ebf 11

Abstract: TELEFUNKEN EM (on infinite heatsink). 40 % For surges greater than the maximum values, the diode will present , 1 MHz 5V8 B ZW04P 5V8B 1000 B ZW 04P13B BZW 04P26B 42 100 B ZW 04P171B 10 10 , unidirectional types). Note : V R (V) BZW 04P342B V R (V) 1 1 B ZW 04P58B 10 100 Fig. 6
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Telefunken ebf 11 TELEFUNKEN EM telefunken spezial DSAGER00042 inkel Scans-048

239B diode

Abstract: bwz04 SCHOTTKY BARRIER DIODE 3.3A/90~100V 31DQ09 31DQ10 FEATURES ° Low Forward Voltage Drop â'¢ Low Power Loss, High Efficiency ° High Surge Capability â'¢30 Volts through 100 Volts Types Available 5.8(.23)DIA 1.5(.059)nTA 1.3(.Ã"5l) + à 1.5(.059) 1.3(.051) DIA 21(.83) MIN 10(.39) MAX 21(.83) MIN _J MAXIMUM RATINGS _Dimensions in mm (Inches) Approx. Net Weight: 1.21 Grams Voltage , zw g u < 100 cu < u Z 50 O P O z S 20 St conditions = 25X; tage-O.lVnns
STMicroelectronics
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BZW04-5V8 BZW04P5V8 239B diode bwz04 bzw04p13b transil 6 BZW04P376B B/376 BZW04-

31DQ09

Abstract: 31DQ10 q Internal clamp diode to discharge delay capacitor Operation of the device is guaranteed , Onstate Output 1) Sink (hrK5nt(Note Clamp diode I) Forward cUWWIt(Note Operating junction , Dissipation T092 SOT223 S08 780mW Zw(Note 2) 780mw(N.t. 2) Internally limited 100mA 150 , (Vccoutput=4v) , I,i"k Offstate output leakage current (Vcc, output=5v) Ioh Clamp diode forward
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D0D171

transistor et 455

Abstract: ZIX690B 2.5" hard disk (20MB) *Usable within the functions of the ZW model. JW-50PG LCD display (640 x 480 , display JW-50SP Ladder software for IBM-PC *ZW mode! means W10/16/51/100/70H/100H. 10-2 3-4. System , station Link module JW-21CM Hi Ik ZW-160DL1 ZW-501DL1 JW-10CM ZW-10CM JW-21CM ' The system , JW-1OCM, ZW-1OCM, ZW-501DL1, and ZW-160DL1. â  Data link DL1(N:M type) system can constuct a system , station. When JW-21 CM can be used JW-1 OCM, ZW-10CM, ZW-1 KODL9, ZW-501 DL9, and ZW-160DL9 as master
Zetex Semiconductors
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ZSM561 ZIX690B transistor et 455 diode L04C T0921 T092

JW-22CU

Abstract: diode KIV 63 Rthjc Tjm (A) Part IF(AV) (V) (KA) (V) / (A) (/W) () Outline ZW 200 / 400 200 400 4 1.2 / 600 0.072 D6 ZW 300 / 400 300 400 6 1.2 / 900 0.038 D7 ZW 500 / 400 500 400 10 1.2 / 1500 0.031 ZW 1000 / 400 1000 400 20 1.2 / 3000 0.02 D11 ZW ,
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JW-22CU diode KIV 63 jw-2pg JW212 E2J zener diode diode KIV 62

scr kp 1800

Abstract: KS600 Drain-Source Diode Forward Current is 10 a Maximum Power Dissipation @Tc=25°C Derate above 25°C PD 100 w , Max Unit DRAIN-SOURCE DIODE CHARACTERISTICSa Diode Forward Voltage vsd Vgs = OV, Is =10A 0.86 , o o S? z = . o zW a , Current 0.1 0.4 0.6 0.8 1.0 1.2 1.4 Vsd, Body Diode Forward Voltage (V) Figure 8. Body Diode Forward
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scr kp 1800 KS600 KP1000 KP500 KP3000 kp4000 8-M10X

A900R

Abstract: OA90 serviceability of the diode may be impaired. Specification Features: Wide Zener Voltage Range , 28.35 TC30VC ZT 28.50 30 31.50 TC33VC ZU 31.35 33 34.65 TC36VC ZV 34.20 36 37.80 TC39VC ZW 37.05 39
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A900R OA90 A900-R cd 106 CEP1012/CEB1012
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