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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

zpd diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: '™1â'™ 807 V()zpd Diode voltage, zapped 808 V()uzpd Diode voltage, unzapped 809 iC-Haus
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zpd diode

Abstract: sdc 603 ±5 %, at chip temperature 27 °C 806 V()zap Zapping voltage PROG = '1' 807 V()zpd Diode voltage, zapped 808 V()uzpd Diode voltage, unzapped 809 Rpd()VZAP Pull-Down
iC-Haus
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IC-MH

Abstract: , at chip temperature 27 °C 806 V()zap Zapping voltage PROG = â'™1â'™ 807 V()zpd Diode voltage, zapped ? 808 V()uzpd Diode voltage, unzapped ? 809 Rpd()VZAP
iC-Haus
Original

Zener ZPD

Abstract: zpd diode ) Tested with pulses - Gemessen mit Impulsen s) The ZPD 1 is a diode operated in forward. Hence, the index , ZPD 1.ZPD 51 (500 mW) Silicon-Z-Diodes ECU rr" ÇvO -Eft) riax. h 0.56 Nominal breakdown , auf Umgebungstemperatur gehalten werden 76 IDünSH â¡â¡â¡â¡22b bbT ZPD 1.ZPD 51 (500 mW , °C ZPD 13) 0.7. .0.8 6.5 (
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Zener ZPD 3.3

Abstract: zener diode zpd 9.1 ms ­ Gemessen mit 20 ms-Impulsen 3 ) The ZPD 1 is a diode, operated in forward. The cathode, indicated by a ring, is to be connected to the negative pole. Die ZPD 1 ist eine in Durchlaß betriebene , ZPD 1.ZPD 75 (0.5 W) Silicon-Planar-Zener-Diodes Silizium-Planar-Zener-Dioden Maximum , ZPD 1 . ZPD 75 (500 mW) Maximum ratings Grenzwerte Type Typ Zener voltage 2 , ] Reverse volt. Sperrspanng. IR = 100 nA VR [V] Z-current 1) Z-Strom 2) Izmax [mA] TA = 25/C ZPD
Diotec
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zener diode zpd 6

Abstract: Zener ZPD leads at a distance of 4 mm from case are kept at ambient temperature (3) The 2PD1 is a silicon diode , ; 66.0 72.0 ! 79.0 N otes: (1) Measured with pulses tp = 5 ms (3) The ZPD1 is a silicon diode , a constant (pulsed) mA ZPD. ZPI)10 T| = 25°C 30 Z P D12 20 ZPD1Ï ZPC>18 , constant (pulsed) mA ZPD. 8 ii O 10 ZPD39 8 , ambient temperature mA ZPD. mW 500 ZPD. 400 300 200 \ 100 1V -V F
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zener diode zpd 6 Zener ZPD Diode Zener - ZPD k11r ZPD ZENER DIODE ZPD11 ZPD75 DO-35 ZMM75 D7/10K D8/10K

ZPO 3,3

Abstract: Zener ZPD ZPD 2.7 . ZPD 51 SILICON PLANAR ZENER DIODES Silicon Expitaxial Planar Diode The Zener , HQNEV TECHNOLOGY LTD. ) SO 9002-94 ZPD 2.7 . ZPD 51 SILICON PLANAR ZENER DIODES Zener Voltage ,   3 ' ZPD 2.7 . ZPD 51 SILICON PLANAR ZENER DIODES Breakdown characteristics Tj = constant (pulsed) mA ZPD. Breakdown characteristics Tj = constant (pulsed) mA ZPD. ZPC 10 , IzPC 18 ZPD 22 Zf ®D 27
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ZPO 3,3 Zener ZPD 3.3 zener diode zpd 9.1 zpd diode zpd 6.2 zener zener diode zpd 10 ZPD24 ZPD27 ZPD30 ZPD33 ZPD36 ZPD43

Zener ZPD

Abstract: ZPD Zener 1 The ZPD1 is a silicon diode operated in forward direction. Hence, the index o f all parameters , T js constant (pulsed) mA 10 ZPD. 25 C ZPD39 ZPD51 ZPD47 8 ·z 6 ZPD43 . ToSt««rent , leads a t a distança of 4 mm from c«sa ara kept a t am bient tem perature mA ZPD. mW 500 , current K/W 103 7 4 a S V ZPD. 3 rtfiA ' 102 7 4 3 2 5 10 7 4 3 5 J , lead* a t a dlatanca of 4 mm from c a te are leapt a t am bient tem perature v ZPD._ V ZPD
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ZPD Zener Zener ZPD 7.5 zener diode zpc 3 I0005
Abstract: is a silicon diode operated in forw ard direction. H ence, th e subscript o f all param eters , CURVES ZPD1 THRU ZPD75 Breakdown characteristics T j= constant (pulsed) mA ZPD. Yz Breakdown characteristics Tj = constant (pulsed) mA 30 ZPD. Tj = 25°C ZPI 310 ZP D12 Z , CURVES ZPD1 THRU ZPD75 Breakdown characteristics T j= constant (pulsed) mA 10 ZPD. Tj= 25â , mA ZPD. 100 200" C ^ v Tgm b G en eral S e m ic o n d u c t o r RATINGS AND -
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ZPD5V6

Abstract: zpd 6.2 zener of 8 mm from case. 3) The ZPD1 is a silicon diode operated in forward direction. Hence, the , ZPD2V7B.ZPD75B Breakdown characteristics Tj = constant (pulsed) mA 50 ZPD. Tj=25o C ZPD 1B Iz , characteristics Tj = constant (pulsed) ZPD. mA 30 Tj=25o C ZPD10B ZPD12B Iz ZPD15B 20
Semtech Electronics
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ZPD5V6 ZPD6V8 ZPD3V3 ZPD8V2 ZPD3V9 zpd diode 3 ZPD11B ZPD13B ZPD16B ZPD18B ZPD20B ZPD22B

ZPD 5.1 ITT

Abstract: diode zener ZD 88 previous m entioned exam ple using the c o n ­ ventional zener diode ZPD 22. M oreover is should be noted , Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated , bonded diodes 17 Silicon diodes 17 S ilicon ca p a citan ce diodes 18 Silicon diode sw , O O 238 238 238 238 238 238 T D A 1053 138 ZD Series ZPD Series ZPU Series ZPY , 3,3, ZTE 3,6, ZTE 3,9, ZTE 4,3, ZTE 4,7, ZTE 5,1 ZD Series, ZPD Series, ZPU Series, ZPY Series
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ZPD 5.1 ITT diode zener ZD 88 germanium ZPD ITT CJ 4148 ZENER germanium transistor F-92223 D-7800 I-20093

AC125K

Abstract: 6AN7 e o f booster diode m a xim u m ca p ac ita n c e o f sm oothing filter in put ca p ac ita n c e , water-repellent layer to preclude flash-overs even at high humidity. TWIN DIODE for AM. FM demodulators and ratio , mA W = 3MÎ2 Rgi = 3 Mil R* Diode -U., =350 V = 5 mA 1. 1 . = 0.8 mA Typical Operation Pentode in RF or IF U. 1. Capacitances Pentode C - 4 pF Co = 6.5 pF C«g= 2 mpF Diode Co = 3.8 pF ^ i / C n I , mA S =1.2 mA/V H = 70 n = 58 kQ Capacitances Triode Ci =2.7 pF Co =1.7 pF C,g, =1.5 pF Diode Cu
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A741PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 tungsram 72741N 72747N 72748N 7B131N 76149N 1709C
Abstract: 4684955 I T T SEMICONDUCTORS ZENER DIODES _ 87D 02 3 3 6 a? dFI^am tss â¡â¡os3Bb D 7 ZPD Series 500 mW Glass Zener Diodes in DO-35 Package (TA = 25 °C) Type Zener Voltage Range* ZzK atlzK Typical Temperature Coefficient at lz = 5 mA mA Ohms mA %/°C Volts mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 , Upon Request. The ZPD1 is a silicon diode operated in forward direction. Hence, the cathode terminal -
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ZPD10 ZPD12 ZPD13 ZPD15 ZPD16 ZPD18

diode zener 85 c 12 k3

Abstract: zpd diode ZENER DIODES (5 0 0 m W ) ZPD1 / ZPD7S CASE TYPE: D 0204AH (Glass DO-35) Dynamic Resistance Zener Voltage!1) at Iz = 5 mA Type ZPD K3') ZPD2.7 ZPD3 ZPD3.3 ZPD3.6 ZPD3.9 ZPD4.3 ZPD4.7 ZPD5.1 ZPD5.6 ZPD6.2 ZPD6.8 ZPD7.5 ZPD8.2 ZPD9.1 ZPD10 ZPD11 ZPD12 ZPD13 ZPD15 ZPD16 ZPD18 ZPD20 ZPD22 ZPD24 ZPD27 ZPD30 ZPD33 ZP036 ZPD39 ZPD43 ZPD47 ZPD51 ZPD56 ZPD62 ZPD68 ZPD75 Hotes: ( 1 ) Tested with pulses , +10
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diode zener 85 c 12 k3

sy 320 diode

Abstract: sg 4001 diode -5201 Z-Diode ZPD -5303 5201/5303 Diode KY 705 R 411, 220/20 -5303 R 416, 150/20 -5201 R 414, 120/20 , Bauteil Transistor KG 147 KO 148 KC 507 KP 508 K? ¿57 KO 508 KP 124 Diode GA 205 KY 131 GA 201 GA 204 KA , Transistor KT 315 A KT 315 B MP 41 Diode D 9 W Thermistor ST-1-330 Transistor KT 315 B Diode D 9 W
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sy 320 diode sg 4001 diode GER-A sy 360 diode sy 104 KY transistor

diode 4007 smd diode

Abstract: P6KE SMD recovery behaviour of the diode!) the boost diode must be ultrafast. At 230 VRMS mains, minimum a 600 V , diodes can be switched in series or a single bidirectional TVS diode (Suffix "B" or "C") can be used , voltage is not controlled and there is no load at the output, voltage may increase until rectifier diode , ) SD101, SD103 (15 . 200 mA, 20 . 60 V) ZPD., ZPY., ZY. (500 mW. 2W) BC327ff, BC546ff, MPSA05
Diotec
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diode 4007 smd diode P6KE SMD EM513 DIODE B125 bridge diode Diode IN 5404 1N54040 BZW04- BZW06- TGL34- TGL41- SGL34-20 SGL1-20

ZPD 5.1 ITT

Abstract: ITT ZPD 7.5 VOLTAGE Since the actual voltage available from a given zener diode is temperature dependent, it is , significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state , BZX83C33, M-ZPD2.7 thru M-ZPD33 ELECTRICAL CHARACTERISTICS (atTA = 25°C) Motorola ZPD and , Device Type Nominal Min Max atlzr BZX83 ZPD % per °C BZX83 ZPD at Ir BZX83C2V7 ZPD2.7 2.7 2.5 2.9 85 , 20 70 +0 05 +0 09 8.5 100 nA BZXS3C12 ZPD 12 12 11.4 12 7 20 90 +0.06 +0 09 9 100 nA BZX83C13
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ITT ZPD 7.5 ITT ZPD 3.9 ZPD18 ITT zpd 3.3 itt ZPD ITT zener diode 3 3 ITT ZPD 4.3 1N746A 1N759A 1N957B 1N992B 1N4370A 1N4372A

BYW100-100

Abstract: L6569 L6569 L6569A HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR s s s s s s s s s s HIGH VOLTAGE RAIL UP TO 600V BCD OFF LINE TECHNOLOGY INTERNAL BOOTSTRAP DIODE STRUCTURE 15.6V ZENER , " (a patented structure). This structure can replace the external bootstrap diode. ELECTRICAL , L6569 has an internal Bootstrap structure that enables the user to avoid the external diode needed, in , /4W R6 47 1/4W C7 8.2nF 630V C6 100nF 250V C8 8.2nF 630V BYW100-100 D1 ZPD 18V
STMicroelectronics
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L6569D L6569AD 18w cfl circuit CFL lamp si diode 1N4007 D94IN058D

CFL lamp

Abstract: BYW100-100 L6569 L6569A HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR s s s s s s s s s s HIGH VOLTAGE RAIL UP TO 600V BCD OFF LINE TECHNOLOGY INTERNAL BOOTSTRAP DIODE STRUCTURE 15.6V ZENER , " (a patented structure). This structure can replace the external bootstrap diode. ELECTRICAL , The L6569 has an internal Bootstrap structure that enables the user to avoid the external diode needed , 470pF 630V 1/4W L1=2.4mH Q2 STD2NB50-1 R7 180K 1/4W R6 47 1/4W D1 ZPD 18V C7 8.2nF
STMicroelectronics
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irf 146 RON12 diode 1N4006 specifications sylvania logic PTC 15 T 630V 100NF 630V
Abstract: L6569 L6569A HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR I I I I I I I I I I HIGH VOLTAGE RAIL UP TO 600V BCD OFF LINE TECHNOLOGY INTERNAL BOOTSTRAP DIODE STRUCTURE 15.6V ZENER , driverâ' (a patented structure). This structure can replace the external bootstrap diode. ELECTRICAL , the external diode needed, in similar devices, to perform the charge of the bootstrap capacitor that , -100 D1 ZPD 18V RV1 PTC 150 350V D2 L1=2.4mH core TH LCC E2006-B4 Ref also VOGH 575 0409200 STMicroelectronics
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