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LM3S5R31-IBA80-C3 Texas Instruments Stellaris Microcontroller 103-NFBGA visit Texas Instruments
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zo 103 ma

Catalog Datasheet MFG & Type PDF Document Tags

ZO 103

Abstract: zo 103 ma = 7V VCC = 5V ZO = 50 TA = 25oC 2 4 6 8 102 2 FREQUENCY-MHz 4 6 8 103 , 30 25 ZO = 50 TA = 25oC 20 15 10 101 2 4 6 8 102 2 4 6 8 103 , ZO = 50 1.1 1.0 101 ­30 2 4 6 8 102 2 4 6 8 103 101 2 4 6 , RETURN LOSS-dB OUTPUT RETURN LOSS-dB 4 6 8 103 40 35 30 OUTPUT 25 VCC = 6V ZO = 50 , 20dB insertion gain · 4.8dB (6dB) noise figure ZO=75 (ZO=50) · No external components required ·
Philips Semiconductors
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ZO 103 MA 75 505

Abstract: ATF-21186 Scattering Parameters, Common Source, Zo = 50 , VDS = 2 V, IDS = 10 mA Freq. S11 S21 (GHz) Mag. Ang. dB , ATF-21186 Typical Noise Parameters, Common Source, Zo = 50 , VDS = 2 V, ID = 15 mA Frequency GHz , -21186 Typical Scattering Parameters, Common Source, Zo = 50 , VDS = 2 V, IDS = 20 mA Freq. S11 S21 (GHz , , Common Source, Zo = 50 , VDS = 2 V, ID = 20 mA Frequency GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 , Source, Zo = 50 , VDS = 3 V, IDS = 70 mA Freq. S11 S21 (GHz) Mag. Ang. dB Mag. Ang. 0.5 0.933
Hewlett-Packard
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ATF-21186-TR1 ATF-21186-STR ZO 103 MA 75 505 ATF 136 5091-4862E 5965-8716E

0840 057

Abstract: ATF-21186 -21186 Typical Scattering Parameters, Common Source, Zo = 50 , VDS = 2 V, IDS = 10 mA Freq. S11 S21 (GHz , Parameters, Common Source, Zo = 50 , VDS = 2 V, ID = 10 mA Frequency GHz 0.5 1.0 1.5 2.0 2.5 3.0 , , Common Source, Zo = 50 , VDS = 2 V, IDS = 15 mA Freq. S11 S21 (GHz) Mag. Ang. dB Mag. Ang. 0.5 , 10.3 9.9 9.4 8.5 7.6 6.9 6.3 5.9 ATF-21186 Typical Scattering Parameters, Common Source, Zo , 6.5 6.1 ATF-21186 Typical Scattering Parameters, Common Source, Zo = 50 , VDS = 3 V, IDS = 70 mA
Hewlett-Packard
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0840 057

100MHz high-frequency generator

Abstract: NE5205AD 4 6 6 8 103 SR00218 VCC = 7V VCC = 5V ZO = 50 TA = 25oC 2 4 6 8 102 2 , SR00223 ZO = 50 TA = 25oC 15 10 5 8 103 Figure 6. Insertion Gain vs Frequency (S21 , LOSS-dB 4 6 8 103 40 35 30 OUTPUT 25 VCC = 6V ZO = 50 TA = 25oC 20 INPUT 15 35 30 2 4 6 8 102 2 4 6 8 103 OUTPUT 25 20 INPUT VCC = 6V ZO = 75 , Configuration FEATURES · 600MHz bandwidth · 20dB insertion gain · 4.8dB (6dB) noise figure ZO=75 (ZO
Philips Semiconductors
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100MHz high-frequency generator NE5205AD SA5205AN NE5205AN SA5205AD SE5205A NE/SA/SE5205A NE/SA/SE5205 450MH 600MH SR00215

NE5204AN

Abstract: NE5204A VCC = 8V ZO = 50 10 10 101 2 4 6 8 102 2 4 6 101 8 103 2 4 6 , 102 ­15 ZO = 50 TA = 25oC VCC = 6V ­20 ­25 2 4 ­30 6 8 103 101 2 4 , 6 8 103 b. Insertion Gain vs Frequency (S21) 10 10 ZO = 50 TA = 25oC VCC = 6V , INPUT VCC = 6V ZO = 75 TA = 25oC 15 10 6 8 103 101 2 4 6 8 102 2 4 6 , 1.1 4 6 8 102 2 FREQUENCY-MHz 4 1.0 101 6 8 103 ZO = 50 2 4 6 8 102 2
Philips Semiconductors
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NE5205 NE5204AN NE5204A NE5204AD SA5204AD SA5204AN NE/SA5204A NE/SA5204 200MH 350MH

zo 103 ma 75 607

Abstract: ZO 103 MA 75 505 Scattering Parameters, Common Source, Zo = 50 , VDS = 2 V, IDS = 10 mA Freq. S11 S21 (GHz) Mag. Ang. dB , ATF-21186 Typical Noise Parameters, Common Source, Zo = 50 , VDS = 2 V, ID = 15 mA Frequency GHz , -21186 Typical Scattering Parameters, Common Source, Zo = 50 , VDS = 2 V, IDS = 20 mA Freq. S11 S21 (GHz , , Common Source, Zo = 50 , VDS = 2 V, ID = 20 mA Frequency GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 , Source, Zo = 50 , VDS = 3 V, IDS = 70 mA Freq. S11 S21 (GHz) Mag. Ang. dB Mag. Ang. 0.5 0.933
Agilent Technologies
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zo 103 ma 75 607 P 1060 atf transistor zo 607 zo 607 MA

ZO 103

Abstract: High-Frequency Wideband Power Transformers THIRD­ORDER INTERCEPT-dBm OUTPUT LEVEL-dBm 8 103 VCC = 7V VCC = 6V VCC = 8V VCC = 5V ZO = 50 TA = 25oC 101 2 20 6 8 102 2 4 6 8 103 ZO = 50 TA = 25oC 15 10 , ZO = 50 1.1 ­30 101 1.0 101 2 4 6 8 102 2 4 6 8 103 2 4 6 8 102 , 101 6 8 103 a. Input VSWR vs Frequency ZO = 50 2 4 6 8 102 2 FREQUENCY-MHz 4 , insertion gain · 4.8dB (6dB) noise figure ZO=75 (ZO=50) · No external components required · Input and
Philips Semiconductors
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SA5204A SA5204 SA5205 ZO 103 High-Frequency Wideband Power Transformers ZD 103 zo 103 ma ZD 103 ma operational amplifier discrete schematic

HIGH POWER ANTENNA SWITCH PIN DIODE

Abstract: UM9401B 10 10 uA Series Resistance Capacitance Parallel Resistance RS CT RP If = 50 mA, F , Carrier Lifetime IF = 10 mA 2.0 If = 50 mA Pin = 50 W f = 50 MHz, If = 50 mA Pin = 10 W, 0 , 60 Rs versus If TYPICAL 103 f = 100 MHz 102 Rs (Ohms) UM9401/UM9402 UM9415 101 0 10 10-5 10-4 10-3 10-2 10-1 ELECTRICALS ELECTRICALS 10-1 100 If (A , COMMERCIAL TWO-WAY RADIO ANTENNA SWITCH DIODES WWW . Microsemi .C OM Rp versus f TYPICAL 103 Rp
Microsemi
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UM9401 UM9402 UM9401B HIGH POWER ANTENNA SWITCH PIN DIODE um9401sm UM9415b UM9401 equivalent UM9415B UM9401SM UM9415SM

NE5204AN

Abstract: ne5204 THIRD­ORDER INTERCEPT-dBm OUTPUT LEVEL-dBm 8 103 VCC = 7V VCC = 6V VCC = 8V VCC = 5V ZO = 50 TA = 25oC 101 2 20 6 8 102 2 4 6 8 103 ZO = 50 TA = 25oC 15 10 , 1.2 ZO = 50 1.1 ­30 101 1.0 101 2 4 6 8 102 2 4 6 8 103 2 4 6 8 , 101 6 8 103 a. Input VSWR vs Frequency ZO = 50 2 4 6 8 102 2 FREQUENCY-MHz 4 , monolithic chip. 200 MHz, ±0.5dB 350 MHz, -3dB · 20dB insertion gain · 4.8dB (6dB) noise figure ZO
Philips Semiconductors
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ne5204 RF1140 SR00193

zo 103 ma

Abstract: , Zo = 50 £2 200 to 2000 MHz (200 MHz step) (I c = 5 mA) ® -o £, (I c = 10 mA) S12 , 5 V , Zo = 50 £i 200 to 2000 M Hz (200 MHz Step) © - o (I c = 5 mA) ¿âj- a (lc = 10 mA) Condition: V c e = 5 V , Zo = 50 £2 200 to 2000 MHz (200 MHz step) @ o (I c = 5 mA) û , ) © - o ^ - A (I c = 10 mA) Condition: V c e = 1 V , Zo = 50 £2 200 to 2000 M Hz (200 MHz step , ) (lc = 5 m A ) © -o a (lc = 10 mA) Condition: V c e = 1 V , Zo = 50 £2 200 to 2000
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OCR Scan
2SC5246------S 2SC5246

TA-102

Abstract: TA-1023 V mA mW 20 12 2 100 400 150 -55150 min typ max VCB10VIE0 VEB1VIC0 VCE5VIC30mA , - VCE 50 I C - VBE 100 0.35mA , I C - mA , I C - mA 0.30mA 40 0.25mA , 3 5 7 100 1.0 1.0 2 3 2 3 , IC - mA Cob - VCB 10 3 f = 1MHz 5 3 , mA 3 5 7 100 S21e - I C VCE =5V , - dB S21e 2 6 2 2 5 7 1.0 12 , 5 , IC - mA f = 1GHz 10 2V 8 6 4 2 0 7 1.0 2 3 5 7 10 2 3
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2SC5414 TA-1023 TA-102 N5910 VCE5VIC30 VCE5VIC70 2SC541430 90E180

A1081-5

Abstract: A1081 unit V V V mA mW 20 12 2 100 400 150 - 55 150 Electrical Characteristics / Ta , 0.5 0.45 0.44 1 2 3 SANYO : NP 1.3 IC - VCE 0.30mA 40 , IC - mA 0.25mA , 0 80 V CE = , IC - mA 0.35mA 0 IC - VBE 100 5V 50 2V 1.3 1 , 3 5 7 10 2 3 , IC - mA 5 7 100 2 3 IT13394 1.0 2 3 5 7 10 2 3 , IC - mA 5 7 100 IT13401 No. A1081-2/6 2SC5414A Cob - VCB 10 7
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A1081-5 A1081 955 539 ic 93009AB TC-00002103 A1081-1/6 IT13393 IT13392 A1081-5/6

2SC5246

Abstract: ZO 103 (200 MHz step) (I C = 5 mA) (I C = 10 mA) Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 , Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) 2SC5246 , ­90° Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) S22 , ­120° ­90° Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10
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ZO 189 transistor Hitachi DSA0014

marking CODE GA sot363

Abstract: atf 36163 Low Noise Amplifier tuned for a typical device. ATF-36163 Typical Parameters TC = 25°C, ZO = 50 , Vds = 2 V, Ids = 15 mA , Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. dB S12 , Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA 20 1.6 ATF-36163 Typical Noise Parameters 24 2.0 , V, ID = 10 mA. ATF-36163 fig 2 ATF-36163 Typical Scattering Parameters, Common Source, ZO = , ATF-36163 fig 3 20 16 GAIN (dB) Common Source, ZO = 50 , VDS = 1.5 V, ID = 15 mA 20 1.6
Avago Technologies
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marking CODE GA sot363 atf 36163 Low Noise Amplifier Transistor TT 2246 HEMT marking P A004R marking 34 sot-363 rf 5989-1915EN AV02-1441EN

Transistor TT 2246

Abstract: TT 2246 transistor -36163 Typical Parameters TC = 25° C, ZO = 50 , Vds = 2 V, Ids = 15 mA, (unless otherwise noted). Symbol Fmin Ga , ATF-36163 Typical Scattering Parameters, Common Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA Freq. GHz , : 1. Gmax = MAG for K > 1 and Gmax = MSG for K 1. Common Source, ZO = 50 , VDS = 1.5 V, ID = 15 mA , Source, ZO = 50 , VDS = 2.0 V, ID = 10 mA opt Freq. Fmin Ga GHz dB dB Mag. Ang. 2 0.46 18.60 0.84 28 3 , , ID = 10 mA. 6 ATF-36163 Typical Scattering Parameters, Common Source, ZO = 50 , VDS = 2 V, ID
Agilent Technologies
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TT 2246 transistor SC-70 5965-4747E

Transistor TT 2246

Abstract: 4747E Specifications TC = 25°C, ZO = 50 , Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted). Symbol NF G gm Idss , Parameters TC = 25°C, ZO = 50 , Vds = 2 V, Ids = 15 mA, (unless otherwise noted). Symbol Fmin Ga , , Common Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA S11 Mag. 0.99 0.98 0.96 0.93 0.87 0.81 0.75 , ) Common Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA Freq. Fmin Ga opt GHz dB dB Mag. Ang. 2 0.48 , . 5-81 ATF-36163 Typical Scattering Parameters, Common Source, ZO = 50 , VDS = 1.5 V, ID = 15 mA S11
Hewlett-Packard
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ATF-36163-TR1 ATF-36163-BLK 4747E Gm 3842

Transistor TT 2246

Abstract: A004R TC = 25°C, ZO = 50 , Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted). Symbol Parameters and Test , -36163 Typical Parameters TC = 25°C, ZO = 50 , Vds = 2 V, Ids = 15 mA, (unless otherwise noted). Symbol Fmin , Scattering Parameters, Common Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA S11 Mag. 0.99 0.98 0.96 0.93 , (dB) Common Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA opt Freq. Fmin Ga GHz dB dB Mag , 10 mA. 4 ATF-36163 Typical Scattering Parameters, Common Source, ZO = 50 , VDS = 1.5 V, ID =
Avago Technologies
Original

Transistor TT 2246

Abstract: 4747E TC = 25°C, ZO = 50 , Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted). Symbol Parameters and Test , -36163 Typical Parameters TC = 25°C, ZO = 50 , Vds = 2 V, Ids = 15 mA, (unless otherwise noted). Symbol Fmin , Scattering Parameters, Common Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA S11 Mag. 0.99 0.98 0.96 0.93 , (dB) Common Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA Freq. Fmin Ga opt GHz dB dB Mag. Ang , 10 mA. 4 ATF-36163 Typical Scattering Parameters, Common Source, ZO = 50 , VDS = 1.5 V, ID =
Agilent Technologies
Original
Abstract: Semiconductor Corporation FIN1049 · Rev. 1.0.3 www.fairchildsemi.com FIN1049 - LVDS Dual-Line Driver , left open. © 2003 Fairchild Semiconductor Corporation FIN1049 · Rev. 1.0.3 www.fairchildsemi.com , -65 Max. +4.6 +4.6 +4.6 +150 +150 +260 7000 250 Unit V V V mA °C °C °C V Recommended , FIN1049 · Rev. 1.0.3 www.fairchildsemi.com 3 FIN1049 - LVDS Dual-Line Driver with Dual-Line , , VIN=0 V or 2.8 V 2.0 GND VIN=0 V or VCC VIK=-18 mA See Figure 4 RL=100 Driver Enabled See Figure 4 Fairchild Semiconductor
Original
TIA/EIA-644-A FIN1019 FIN1049MTCX MO-153 MTC16

8B103

Abstract: SA5205AD . 7511 J = Zo- 2 4 6 s102 2 4 6 6 103 , stability. FEATURES â'¢ 600MHz bandwidth â'¢ 20dB insertion gain â'¢ 4.8dB (6dB) noise figure ZO=75Q (Z0 , Icc Supply current Over temperature 20 19 25 25 32 33 20 19 25 25 32 33 mA mA S21 Insertion gain f , Current vs Supply Voltage 9 20 P 15 10 . Zq i son TA = 25°C - vcc.5v 101 2 4 6 8 ,â'ž2 2 4 8 8 103 FREQUENCYâ'"MHz Figure 3. Insertion Gain vs Frequency (S;i) 101 2 4 S > 102 2 4 6 8 103 FREQUENCYâ'"MHz Figure
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OCR Scan
8B103 DN300 DN550 cable tv amplifier hybrid A102 schematics c band power supply satellite receiver
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