NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: POWERZORB 1.5 KW Transient Absorption Zerier Diode IN5907 IN5907 IN5908 IN5908 Transient Absorption zener , 20mS 30 Transient Absorption Zener Diode IIN5907 IIN5907 IIN5908 IIN5908 Peak Power derating curve Continuous d.c. , clamping voltage at IZSM 1 VCL Volts Peak pulse current IZSM 1 Amps Maximum clamping voltage at IZSM 2 VCL Volts Peak pulse current IZSM 2 Amps Maximum clamping voltage at IZSM 3 VCL Volts Peak pulse current IZSM 3 Amps Temp coefficient WC IN5907 IN5907 6.0 5.0 300 7.6 30 8.0 60 8.5 120 + 057 IN5908 IN5908 6.0 5.0 300 7.6 ... | OCR Scan |
3 pages, |
IIN5907 5W zener diode transient absorption zener D027A IIN5908 zener diode Izsm IN5908 ON IN5907 IN5908 IN5907 abstract |
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| Abstract: POWERZORB IN5555 IN5555 -IIN5558 -IIN5558 1.5 KW Transient Absorption Zener Diode A range of Transient Absorption zener diodes specifically designed to meet high reliability requirements in the aviation industry. , Absorption Zener Diode IIN5555 IIN5555 -IIN5558 -IIN5558 100 Non-repetitive peak pulse power rating curve Ijjs 10us 100ys , Volts Maximum reverse leakage at VR IRjjA Maximum clamping voltage at IZSM 1 VCL Volts Peak pulse current IZSM 1 Amps Maximum Temp coefficient IN5555 IN5555 33.0 30.5 5.0 47.5 32.0 + .093 IN5556 IN5556 43.7 40.3 5.0 ... | OCR Scan |
3 pages, |
IIN5555 -IIN5558 zener diode Izsm ZENER DIODE 437 in5556 transient absorption zener IN5555 IN5555 abstract |
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| Abstract: RM25 AVALANCHE DIODE D2 VRM : 40 Volts IZSM : 3.0 Amp. ( 10 ms ) FEATURES : * * * * 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) Excellent clamping capability Low zener impedance Fast response time : typically less Pb / RoHS Free 0.284 (7.2) 0.268 (6.8) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O UL94V-O rate , VALUE UNIT VRWM 40 V Allowable Avalanche Current, Rectangular wave Single Shot IZSM ... | Original |
1 pages, |
RM25 diode RM25 RM25 zener diode diode zener RM25 datasheet abstract |
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| Abstract: 1EZ110D5 1EZ110D5 thru 1EZ200D5 1EZ200D5 Silicon 1 Watt Zener Diode SCOTTSDALE DIVISION APPEARANCE The , J-STD-020B J-STD-020B with no dry pack required. 1EZ110D5 1EZ110D5 thru 1EZ200D5 1EZ200D5 Silicon 1 Watt Zener Diode SCOTTSDALE , 5 % TOLERANCE 1 WATT MOLDED ZENER DIODE DEVICE NOMINAL ZENER VOLTAGE 1EZ110D5 1EZ110D5 , 1EZ110D5 1EZ110D5 thru 1EZ200D5 1EZ200D5 Silicon 1 Watt Zener Diode SCOTTSDALE DIVISION Pd, Maximum Rated Power , 5% tolerances from 110 to 200 volts in a DO-41 DO-41 plastic package size. Other Zener voltage tolerances ... | Original |
3 pages, |
MIL-PRF19500 DO-204AL 80 V 1 watt zener diode 1N4728 1EZ200D5 1EZ110D5 DO-41 1EZ110D5 abstract |
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| Abstract: 1EZ110D5 1EZ110D5 thru 1EZ200D5 1EZ200D5, e3 Silicon 1 Watt Zener Diode SCOTTSDALE DIVISION APPEARANCE The , heat sunk. 1EZ110D5 1EZ110D5 thru 1EZ200D5 1EZ200D5, e3 Silicon 1 Watt Zener Diode SCOTTSDALE DIVISION MICROSEMI , 5 % TOLERANCE 1 WATT MOLDED ZENER DIODE DEVICE NOMINAL ZENER VOLTAGE 1EZ110D5 1EZ110D5 , 1EZ200D5 1EZ200D5, e3 Silicon 1 Watt Zener Diode SCOTTSDALE DIVISION Pd, Maximum Rated Power Dissipation (Watts , 5% tolerances from 110 to 200 volts in a DO-41 DO-41 plastic package size. Other Zener voltage tolerances ... | Original |
3 pages, |
zener diode 1 watt MIL-PRF19500 DO-204AL 1N4728 1EZ200D5 1EZ110D5 10 watt zener diode DO-41 1EZ110D5 abstract |
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| Abstract: 1N5969US 1N5969US JANTXV, AND JANS · 5 WATT ZENER DIODES · NON CAVITY CONSTRUCTION · METALLURGICALLY BONDED , TEST ZENER CURRENT VOLTAGE IZT VZ@IZT MAXIMUM ZENER IMPEDANCE MAXIMUM REVERSE LEAKAGE CURRENT VOLTAGE ZZ@IZT ZZK(1) @ IZK=5mA REGULATION VZ IR VR SURGE CURRENT IZSM , 19500/356 LEAD FINISH: Tin / Lead NOTE 1 IZK=1.0 mA for 1N5969 1N5969 NOTE 2 Zener voltage is measured using the pulse method, 0.2mSec to 200mSec at IZT, with the diode junction stabilized at 25°C ... | Original |
2 pages, |
ZENER 148 Datasheet 1N5969US 1N6632US 1N6633US 1N6635US 1N6636US 1N6637US 5 watt zener 5W zener diode 1N5968US 1N6634US ZENER 148 MIL-PRF-19500/356 MIL-PRF-19500/356 abstract |
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| Abstract: JANTXV, AND JANS · 5 WATT ZENER DIODES · NON CAVITY CONSTRUCTION · METALLURGICALLY BONDED MAXIMUM , NOMINAL TEST ZENER CURRENT VOLTAGE IZT VZ@IZT ±5% MAXIMUM ZENER IMPEDANCE MAXIMUM REVERSE , IZSM VOLTS mA OHMS OHMS VOLTS uA VOLTS AMPS 1N6632 1N6632 1N6633 1N6633 1N6634 1N6634 1N6635 1N6635 , mA for 1N5969 1N5969 NOTE 2 Zener voltage is measured using the pulse method, 0.2mSec to 200mSec at IZT, with the diode junction stabilized at 25°C ±3°C prior to the pulse. LEAD MATERIAL: Copper ... | Original |
2 pages, |
1N6637 JANTX 1N6637 1N6636 1N6635 1N6634 1N6633 1N6632 1N5969 1N5968 MIL-PRF-19500/356 MIL-PRF-19500/356 abstract |
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| Abstract: 4-8 Power Zener Diode VZ (V) lZ = 1mA, momentary 28±3.0* PR (W) (ms) 1500 Package Axial (Body Diameter/Lead Diameter) 5 Axial(10.0/1.3) Part Number IZSM (A) Tj VDC (V) Single Rectangular (ms) (°C) Wave IR IR(H) RZ Tstg (uA) Ta VZ Temperature () (uA) Coefficient , - 0.036* 0.08 0.98 6 2.55 *IZ=10mA Figure1 SZ-10 SZ-10 IZSM Condition IRSM IRSM 2 , 1.1±0.5 (0.4) 13.5±0.3 2±0.3 5.0±0.3 (2.5) 5±0.3 Diode 221 ... | Original |
1 pages, |
SZ-10NN27 SZ-10N27 SPZ-G36 SFPZ-68 Figure1 zener diode sz iz10 SFPZ-68 abstract |
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| Abstract: MIL-PRF-19500/356 MIL-PRF-19500/356 · 5 WATT ZENER DIODES · NON CAVITY CONSTRUCTION · METALLURGICALLY BONDED MAXIMUM RATINGS , NOMINAL TEST ZENER CURRENT VOLTAGE IZT VZ@IZT ±5% MAXIMUM ZENER IMPEDANCE MAXIMUM REVERSE , IZSM VOLTS mA OHMS OHMS VOLTS uA VOLTS AMPS 1N6632 1N6632 1N6633 1N6633 1N6634 1N6634 1N6635 1N6635 , ): 30 °C/W maximum THERMAL IMPEDANCE: (ZOJX): 3 °C/W maximum POLARITY: Diode to be operated with , from body POWER DERATING CURVE FIGURE 2 100.0 Zener Impedance ZZT (ohms) 10.0 6636 1.0 ... | Original |
2 pages, |
5W zener diode 1N5969 1N6632 1N6633 1N6634 1N6635 1N6636 1N6637 1N6637 JANTX 1N5968 MIL-PRF-19500/356 MIL-PRF-19500/356 abstract |
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| Abstract: JANS PER MIL-PRF-19500/356 MIL-PRF-19500/356 · 5 WATT ZENER DIODES · NON CAVITY CONSTRUCTION · METALLURGICALLY BONDED , TEST ZENER CURRENT VOLTAGE IZT VZ@IZT MAXIMUM ZENER IMPEDANCE MAXIMUM REVERSE LEAKAGE CURRENT VOLTAGE ZZ@IZT ZZK(1) @ IZK=5mA REGULATION v VZ IR VR SURGE CURRENT IZSM , ): 10 °C/W maximum at L = 0 THERMAL IMPEDANCE: (ZOJX): 3 °C/W maximum POLARITY: Diode to be operated , (ºC) POWER DERATING CURVE FIGURE 2 100.0 Zener Impedance ZZT (ohms) 10.0 6636 1.0 ... | Original |
2 pages, |
1N5968US 1N5969US 1N6632US 1N6633US 1N6634US 1N6635US 1N6636US 1N6637US 5W zener diode ZENER 148 ZENER 148 Datasheet MIL-PRF-19500/356 MIL-PRF-19500/356 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Zener diodes * * * * * * *IR = 50uA @ VR = 1V *IZSM = 6A @ tp = 100us *Vzmax = 2,45V @ IZ = 5mA *VZSM = @ IZSM = * * * * * *Package: SOT23 * *Package Pin 1: Cathode * .SUBCKT BZB84-B2V4 BZB84-B2V4 BZB84-B2V4 BZB84-B2V4 1 2 * * The diode D2 does not reflect * a physical device. Instead it * improves modeling in the reverse * mode of operation. * D1 1 2 DIODE1 D2 1 2 DIODE2 * .MODEL DIODE1 D + IS .7442 + M = 0.3388 .MODEL DIODE2 D + IS = 1.15E-9 15E-9 15E-9 15E-9 + N = 2.449 + RS = 0.05 .ENDS * www.datasheetarchive.com/download/52977079-596978ZC/71536.zip (BZB84_B2V4.prm) |
NXP | 23/10/2012 | 463.29 Kb | ZIP | 71536.zip |
| Zener diodes * * * * * * *IR = 3uA @ VR = 1V *IZSM = 6A @ tp = 100us *VZmax = 3,98V @ IZ = 5mA *VZSM = @ IZSM = * * * * * *Package: SOT23 * *Package Pin 1: Cathode * .SUBCKT BZB84-B3V9 BZB84-B3V9 BZB84-B3V9 BZB84-B3V9 1 2 * * The diode D2 does not reflect * a physical device. Instead it * improves modeling in the reverse * mode of operation. * D1 1 2 DIODE1 D2 1 2 DIODE2 * .MODEL DIODE1 + VJ = 0.6806 + M = 0.3301 .MODEL DIODE2 D + IS = 1.421E-10 421E-10 421E-10 421E-10 + N = 1.705 + RS = 0.7031 .ENDS * www.datasheetarchive.com/download/52977079-596978ZC/71536.zip (BZB84_B3V9.prm) |
NXP | 23/10/2012 | 463.29 Kb | ZIP | 71536.zip |
| Zener diodes * * * * * * *IR = 3uA @ VR = 1V *IZSM = 6A @ tp = 100us *VZmax = 4,39V @ IZ = 5mA *VZSM = @ IZSM = * * * * * *Package: SOT23 * *Package Pin 1: Cathode * .SUBCKT BZB84-B4V3 BZB84-B4V3 BZB84-B4V3 BZB84-B4V3 1 2 * * The diode D2 does not reflect * a physical device. Instead it * improves modeling in the reverse * mode of operation. * D1 1 2 DIODE1 D2 1 2 DIODE2 * .MODEL DIODE1 D + IS .8526 + M = 0.3775 .MODEL DIODE2 D + IS = 2.621E-12 621E-12 621E-12 621E-12 + N = 2.085 + RS = 0.2 .ENDS * www.datasheetarchive.com/download/52977079-596978ZC/71536.zip (BZB84_B4V3.prm) |
NXP | 23/10/2012 | 463.29 Kb | ZIP | 71536.zip |
| Zener diodes * * * * * * *IR = 20uA @ VR = 1V *IZSM = 6A @ tp = 100us *Vzmax = 2,75V @ IZ = 5mA *VZSM = @ IZSM = * * * * * *Package: SOT23 * *Package Pin 1: Cathode * .SUBCKT BZB84-B2V7 BZB84-B2V7 BZB84-B2V7 BZB84-B2V7 1 2 * * The diode D2 does not reflect * a physical device. Instead it * improves modeling in the reverse * mode of operation. * D1 1 2 DIODE1 D2 1 2 DIODE2 * .MODEL DIODE1 + VJ = 0.8164 + M = 0.3636 .MODEL DIODE2 D + IS = 7.5E-10 5E-10 5E-10 5E-10 + N = 1.953 + RS = 0.3 .ENDS * www.datasheetarchive.com/download/52977079-596978ZC/71536.zip (BZB84_B2V7.prm) |
NXP | 23/10/2012 | 463.29 Kb | ZIP | 71536.zip |
| Zener diodes * * * * * * *IR = 50uA @ VR = 1V *IZSM = 6A @ tp = 100us *Vzmax = 2,45V @ IZ = 5mA *VZSM = @ IZSM = * * * * * *Package: SOT23 * *Package Pin 1: Cathode * .SUBCKT BZB84-B2V4 BZB84-B2V4 BZB84-B2V4 BZB84-B2V4 1 2 * * The diode D2 does not reflect * a physical device. Instead it * improves modeling in the reverse * mode of operation. * D1 1 2 DIODE1 D2 1 2 DIODE2 * .MODEL DIODE1 D + IS .7442 + M = 0.3388 .MODEL DIODE2 D + IS = 1.15E-9 15E-9 15E-9 15E-9 + N = 2.449 + RS = 0.05 .ENDS * www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (BZB84_B2V4.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| Zener diodes * * * * * * *IR = 3uA @ VR = 1V *IZSM = 6A @ tp = 100us *VZmax = 3,98V @ IZ = 5mA *VZSM = @ IZSM = * * * * * *Package: SOT23 * *Package Pin 1: Cathode * .SUBCKT BZB84-B3V9 BZB84-B3V9 BZB84-B3V9 BZB84-B3V9 1 2 * * The diode D2 does not reflect * a physical device. Instead it * improves modeling in the reverse * mode of operation. * D1 1 2 DIODE1 D2 1 2 DIODE2 * .MODEL DIODE1 + VJ = 0.6806 + M = 0.3301 .MODEL DIODE2 D + IS = 1.421E-10 421E-10 421E-10 421E-10 + N = 1.705 + RS = 0.7031 .ENDS * www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (BZB84_B3V9.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| Zener diodes * * * * * * *IR = 3uA @ VR = 1V *IZSM = 6A @ tp = 100us *VZmax = 4,39V @ IZ = 5mA *VZSM = @ IZSM = * * * * * *Package: SOT23 * *Package Pin 1: Cathode * .SUBCKT BZB84-B4V3 BZB84-B4V3 BZB84-B4V3 BZB84-B4V3 1 2 * * The diode D2 does not reflect * a physical device. Instead it * improves modeling in the reverse * mode of operation. * D1 1 2 DIODE1 D2 1 2 DIODE2 * .MODEL DIODE1 D + IS .8526 + M = 0.3775 .MODEL DIODE2 D + IS = 2.621E-12 621E-12 621E-12 621E-12 + N = 2.085 + RS = 0.2 .ENDS * www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (BZB84_B4V3.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| Zener diodes * * * * * * *IR = 20uA @ VR = 1V *IZSM = 6A @ tp = 100us *Vzmax = 2,75V @ IZ = 5mA *VZSM = @ IZSM = * * * * * *Package: SOT23 * *Package Pin 1: Cathode * .SUBCKT BZB84-B2V7 BZB84-B2V7 BZB84-B2V7 BZB84-B2V7 1 2 * * The diode D2 does not reflect * a physical device. Instead it * improves modeling in the reverse * mode of operation. * D1 1 2 DIODE1 D2 1 2 DIODE2 * .MODEL DIODE1 + VJ = 0.8164 + M = 0.3636 .MODEL DIODE2 D + IS = 7.5E-10 5E-10 5E-10 5E-10 + N = 1.953 + RS = 0.3 .ENDS * www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (BZB84_B2V7.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| * * * *NZH11C NZH11C NZH11C NZH11C * *NXP Semiconductors * *Single Zener diode * * * * * * *IR = 0,04uA @ VR = 8V *IZSM = @ tp = *VZmax = 11,38V @ IZ = 10mA * * * * * * *Package: SOD123F * *Package Pin 1: Cathode *Package Pin 2: Anode 1 1 2 DIODE1 D2 1 2 DIODE2 .MODEL DIODE1 D + IS = 1.5E-015 5E-015 5E-015 5E-015 + N = 2 + BV = 11.72 + IBV = 0 .MODEL DIODE2 D + IS = 2E-016 2E-016 2E-016 2E-016 + N = 1 + RS = 0.4 .ENDS www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (NZH12B.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| * * * *BZB84-B7V5 BZB84-B7V5 BZB84-B7V5 BZB84-B7V5 * *NXP Semiconductors * *Dual Zener diodes * * * * * * *IR = 1uA @ VR = 5V *IZSM = 4A @ tp = 100us *VZmax = 7,65V @ IZ = 5mA *VZSM = @ IZSM = * * * * * *Package: SOT23 * *Package Pin 1: Cathode D1 *Package Pin 2: Cathode D2 *Package Pin 3: common Anode * * * *Simulator: PSPICE * * *# * Please note: This device is an array and the * symbol has to be placed twice on the schematic * .MODEL www.datasheetarchive.com/download/52977079-596978ZC/71536.zip (BZB84_B7V5.prm) |
NXP | 23/10/2012 | 463.29 Kb | ZIP | 71536.zip |