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ISLA112P50IRZ Intersil Corporation 12-Bit, 500MSPS A/D Converter; QFN72; Temp Range: -40° to 85°C visit Intersil Buy
TPA112DRG4 Texas Instruments 0.07W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO8, GREEN, PLASTIC, MS-012AA, SOIC-8 visit Texas Instruments
SCANSTA112VS/NOPB Texas Instruments 7-port Multidrop IEEE 1149.1 (JTAG) Multiplexer 100-TQFP -40 to 85 visit Texas Instruments Buy
SCANSTA112VS Texas Instruments 7-port Multidrop IEEE 1149.1 (JTAG) Multiplexer 100-TQFP -40 to 85 visit Texas Instruments
SCANSTA112SMX/NOPB Texas Instruments 7-port Multidrop IEEE 1149.1 (JTAG) Multiplexer 100-NFBGA -40 to 85 visit Texas Instruments
SCANSTA112SM Texas Instruments 7-port Multidrop IEEE 1149.1 (JTAG) Multiplexer 100-NFBGA -40 to 85 visit Texas Instruments

zener DIODE A112

Catalog Datasheet MFG & Type PDF Document Tags

ZENER 6B5

Abstract: zener DIODE A112 ZENER DIODE SIEMENS TYPE NUMBER (Note l) NOMINAL ZENER VOLTAGE [Note 2) MAXIMUM ZENER IMPEDANCE [Note 3) MAXIMUM REVERSE LEAKAGE CURRENT MAXIMUM ZENER CURRENT MAXIMUM SURGE CURRENT [Note 4) I.-., A , IH1 Microsemi Corp. 3EZ3.9D5 thrui 3EZ200D5 FEATURES â'¢ ZENER VOLTAGE 3.9V to 200V â'¢ HIGH SURGE CURRENT RATING â'¢ 3 WATTS DISSIPATION IN A NORMALLY 1 WATT PACKAGE MAXIMUM RATINGS , 4500 0 25 0.25 0 25 0 25 0 5 05 0 5 0.5 69.2 76 8.3 6 .30 1 , 0 16 (} 14 ¡112 0 12 o : 1 3 10
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3EZ10D5 3EZ11D5 3EZ12D5 3EZ1305 3EZ15D5 3EZ16D5 ZENER 6B5 zener DIODE A112 3EZ13005 3 Watt Zener Diode 3EZ14CI5

ZMM4,3

Abstract: BZX55C ZMM 1 . ZMM 200 Silicon Planar Zener Diodes in MiniMELF case especially for automatic insertion. The Zener voltages are graded according to the international E 24 standrad. Smaller voltage tolerances and higher Zener voltages on request. These diodes are also available in DO-35 case with the type , Ratings (Ta = 25 °C) Symbol Value Unit Zener Current see Table "Characteristics" Power Dissipation , LTD. ( wholly owned subsidiary of HQWEV TECHNOLOGY LTD. ) ZMM 1 . ZMM 200 Type Zener Voltage
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BZX55C ZMM13 ZMM4,3 ZMM10 ZMM11 ZMM12

zener DIODE A112

Abstract: coefficients and long-term stability of the on-chip thin film resistors and buried Zener reference preserve , 90 1 90 mV rms µV rms ±112 ±112 ±112 0.1 0.1 V â"¦ 30 70 602 , V â"¦ mA dB ±10 ±12 ±5 100 ±5 ±10 ±12 ±2 150 ±2 ±112 602 ±112 , translinear technique. An on-chip buried Zener provides a highly stable reference, which is laser trimmed to , AD534 in the square root mode is shown in Figure 19. The diode prevents a latching condition, which
Analog Devices
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AD534L E-20-1 D09675-0-4/11
Abstract: buried Zener reference preserve accuracy even under adverse conditions of use. It is the first , 1 90 1 90 1 90 mV rms μV rms ±112 ±112 ±112 0.1 0.1 V Ω 30 , ±5 ±10 ±12 ±2 150 ±2 ±112 602 ±112 80 0.8 0.1 10 Rev. D | Page 5 of 20  , is generated by a multiplier cell using Gilbertâ'™s translinear technique. An on-chip buried Zener , of the AD534 in the square root mode is shown in Figure 19. The diode prevents a latching condition Analog Devices
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D09675-0-11/13
Abstract: +V: Brown 1 2 3 4 Symbols â'¦ D: Reverse supply polarity protection diode ZD1, ZD2: Surge absorption zener diode Tr1, Tr2 : NPN output transistor PLC / TERMINALS ENERGY CONSUMPTION , accuracy. 40 0 Measurement range L (mm in) Static Removers ø112 ø4.409 ø200 à Panasonic
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Selector Guide

Abstract: do-218ab . 19 â'¢ Zener Diodes , diodes â'¢ HEXFRED® Ultrafast diodes â'¢ TVS diodes â'¢ Zener diodes â'¢ ESD protection diodes , Packaging DM = Standard Recovery Diode Glassivated Moat Vishay Semiconductor â'˜06 = 600 V â , ) None=Probed Die in Chip Carrier LM = Fast Recovery Diode- Glassivated Moat selector guide 3/32 , Bare Die Diodes - A Wide Range of Bare Die and Wafer Form Products Schottky Schottky Diode
Vishay Techno
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Selector Guide do-218ab DO218AB VMN-SG2163-1312

SFH-1212

Abstract: SFH-1212A CONDITIONS MIN â'"0.112 Hardware gain = 9 0.1 V Measurement range (SENSE1) 10-m â'"11.2 , '"25.8 25.8 A Measurement range (SENSE3) 1-m sense resistor (2) â'"112 100 A Input , body diode. Similarly, the charge MOSFET is active during discharge, provided current flow is in the , external sensor consists of a low-cost silicon diode (dual diode in one package is recommended) and
Texas Instruments
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SFH-1212 SFH-1212A MMBFJ201 78PL116 76PL102
Abstract: should be protected from transients through the use of an external resistor and zener diode. The Start , Negative Edge Filter 9 VCC Clamp and Zener Ref Internal Logic +Vbat Output Current Driver , '"5.62 µA µA ICA2 ICA3 3.7 1.05 4.77 1.43 5.63 1.82 µA ICA4 ICA5 â'"112 67.6 , the IC. It also sets the master bias current for all precision currents on the IC. The Vr Zener Reference block contains a 6.75 V zener regulator, which also exhibits a very low temperature coefficient Motorola
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MC33094/D MC33094 MC33094DW

AD7848

Abstract: application of encoder 74148 ⡠ANALOG LC2M0S DEVICES Complete 12-Bit DAC with DSP Interface AD7848 FEATURES Complete DAC with DSP Interface, Comprising: â'" 12-Bit Voltage Mode DAC â'" 3 V Zener Reference â'" Output , 0 0 ns nun ADD0 to INTERNAL WRITE Hold Time «4 «1-12 ti-22 ns nun Data Valid to INTERNAL WRITE , (electrostatic discharge) sensitive device. The digital control inputs are diode protected; however, permanent , part. INTERNAL REFERENCE The AD7848 has an on-chip temperature compensated buried Zener reference
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ADSP-2100 TMS320C25 TMS32010 AD7878 application of encoder 74148 AD7848JN AD7848JP

DIODE S3V 78

Abstract: S3V 83 (electrostatic discharge) sensitive device. The digital control inputs are diode protected; however, permanent , Zener references provide precision references for the DAC and ADC. Interfacing to both the DAC and ADC , * AD7868AN -40°C to +85°C 70 dB ±112 LSB typ N-24 AD7868AQ -40°â'¬ to +85°C 70 dB ±1/2 LSB typ Q , device. The digital control inputs are diode protected; however, permanent damage may occur on
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AD7824 AD7828 DIODE S3V 78 S3V 83 echo amplifier IC 28pin ScansUX995 DIODE S3V 06 AD7778 ADJX24 AD/824 A07868 AD7868

zener DIODE A112

Abstract: DC Motor control IGBT FUJI ELECTRIC ipm Diagram Symbol Vz RALM Description The value of the Zener diode Vz that determines the signal H , ICES Collector-emitter saturation voltage VCE (sat) Diode forward voltage Power supply , Emitting Diode driving circuit The dv/dt withstand capability of the opto-coupler is also affected by the input light emitting diode driving circuit. The driving circuit example is shown in Fig. 9. 27 , resistor on the cathode side of the photo diode 2. Good example: Photo diode A-K is shorted by
Fuji Electric
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DC Motor control IGBT FUJI ELECTRIC ipm 7mbp75ra120 7MBP50RA120 application note IGBT DRIVE 500V 300A 7MBP50RA06001 calculation of IGBT snubber REH983

zy 406 transistor

Abstract: hep R1751 -3.6V 1W Zener Diode -6.2V 1W Zener Diodeâ'" 9.1V JW Zener Diodeâ'"I 2V 1W Ge Diode (1N34A Substitute , Case) Silicon Press-Fit Rectifier (Anode to Case) 4.7 Volt Zener Diode ] Watt 5.6 Volt Zener Diode 1 Watt 11.0 Volt Zener Diode 1 Watt 13.0 Volt Zener Diode 1 Watt 14.0 Volt Zener Diode 1 Watt 15.0 Volt Zener Diode 1 Watt 27.0 Volt Zener Diode I Watt 33.0 Volt Zener Diode 1 Watt 56.0 Volt Zener Diode I Watt 62.0 Volt Zener Diode 1 Watt 82.0 Volt Zener Diode 1 Watt 110 Volt Zener Diode 1 Watt
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zy 406 transistor hep R1751 hep 154 silicon diode triac zd 607 motorola HEP 801 hep 154 diode ZU62B ZU110 ZU110A ZV12B ZV27B ZV33B

relay 12 volts ras 1210

Abstract: GE-MOV 275L40B with the addition of this higher rated type. The same patented SCR/Diode structure of the other SP , . . . . . . . . . . . . . . . . 6-15 SP724 SCR/Diode Array for ESD and Transient , . 6-15 SP724 SCR/Diode Array for ESD and Transient Over-Voltage Protection . . . . . . . . , Metal Oxide Varistors · Multilayer Suppressors · Integrated SCR/Diode Arrays · Surgector Thyristor , Multilayer Suppressor 6 SCR/Diode Array UltraMOVTM, C-III, LA, HA, HB, RA 4 MOV CH ·
Littelfuse
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relay 12 volts ras 1210 GE-MOV 275L40B MOV GE V150 LA10 Disc ceramic capacitor GE 130L20 275l40b hahn transformer VDE 0551
Abstract: zener diode Z Tr : PNP output transistor HUMAN MACHINE INTERFACES ENERGY CONSUMPTION , PROXIMITY SENSORS WIRE-SAVING SYSTEMS Symbols . #7; D: Surge absorption zener diode Z Tr : PNP , connected to the output, malfunction may occur. Symbols . #7; : Reverse supply polarity protection diode D ZD: Surge absorption zener diode Tr : NPN output transistor PARTICULAR USE SENSORS SENSOR , ) Prepared hole ø7.2 mm ø0.283 in ø11.2 mm ø0.441 in ø105 ø4.134 30 1.181 Face to face Panasonic
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GX-12MLU GX-12ML GX-18MU GX-N18M GX-18M
Abstract: equipped with a suppressor diode and an independant monitor sensing the output voltage of the tracking , outputs. Single-output powertrains are protected by a suppressor diode. The temperature of the heat , , so that Po max and TC max are not exceeded. Breakdown voltage of the incorporated suppressor diode at 10 mA (3.3 V, 5.1 V) or 1 mA (≥12 V). Value for 3.3 V for version ≥112. Exceeding this value might damage the suppressor diode. See Output Power at Reduced Temperature Measured according to IEC Power-One
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P4720 G04-Q04 G05-Q04 G06Q04 G05-6HE-Q04 BCD20010-G
Abstract: , the tracking ouputs are protected by a suppressor diode. Outputs of single-output powertrains are also protected by a suppressor diode. The temperature of the heat sink is monitored and causes the , not exceeded. Breakdown voltage of the incorporated suppressor diode at 10 mA (3.3 V, 5.1 V) or 1 mA (≥12 V). Value for 3.3 V for version ≥112. Exceeding this value might damage the suppressor diode. See Output Power at Reduced Temperature Measured according to IEC/EN 61204 with a probe Power-One
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HZZ01217-G G06-Q04

systron Donner 410

Abstract: MIL-STD-750E transistor (pre-cap) inspection. 2073.1 Internal inspection for die (semiconductor diode). 2074.4 , voltage drop, collector to base, diode method). 3141 Thermal response time. 3146.1 Thermal time , transistors. 3476 Commutating diode for safe operating area test procedure for measuring dv/dt during , Electrical characteristics tests for diodes (4000 series). 4000 Condition for measurement of diode static , Microwave diode capacitance. 4106 Detector power efficiency. 4111.1 Figure of merit (current sensitivity
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MIL-STD-750E systron Donner 410 Ultrasonic Atomizing Transducer systron donner accelerometer fastest finger first indicator synopsis substitute diode PH 33D MIL-STD-750D SAE-ARP-743

Wien Bridge Oscillator with LM741

Abstract: IC 8038 function generator Interfacing linear Hall effect transducers (LHETs) Precise diode circuits Full-wave rectifier circuits Peak , suitable pair of zener diodes. The diodes should be connected `back to back' with their anodes joined. The
Operational Amplifier Guidebook
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Wien Bridge Oscillator with LM741 IC 8038 function generator NORP12 bistable multivibrator using ic 555 IC LM741 timer circuit diagram bistable multivibrator using opamp MA01803

transistor BD 540 LYS

Abstract: MC710G 1-105 1-159 1-171 1-177 1-180 1-186 Zener and Reference Diodes, and Reference Amplifiers Introduction, Zener Diodes Quick-Selection Chart Zener Diode Data Sheets Introduction, Reference Diodes , 200M 1 200M 2 00 M 5 2 00 M 1 2 00 M ROâ'" Reference Diode, ZDâ'" Zener Diode, fiP â'" General , 25 1 1 1 1 1 .3 â'¢3 .3 .3 .3 .3 .3 RDâ'"Reference Diode, 2Dâ'"Zener Oiode, G P , GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference
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transistor BD 540 LYS MC710G 131-80 wj 89 LN4005 diode reverse current and voltage SEM 5027A 2n328

zener DIODE A112

Abstract: Pulse bob smith termination ).63 A.1.6. Diode Network , .67 A.1.12. Unused Inputs
Standard MicroSystems
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LAN83C175 Pulse bob smith termination how to connect slotted optocoupler LOG RX-2 1118 wiring diagram of autotransformer for three phase bob smith termination Transcend circuit diagram AN1051/D
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