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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
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LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

zener diode a24

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zener diode a24

Abstract: SMD DIODE 517 CENTRAL SEMICONDUCTOR SOE D â  DDODSl? Ã24 â  CEN T U-O SMD zener Diode melf case tow U.S. Specification (Preferred Series) The Central Semiconductor CLL4728A Series Silicon Zener Diode is a high , CLL4764A 100 2.5 350 3000 0.25 5.0 76 45 SMD Zener Diode SOT-89 Case 1 .ow Proelectron Specification TYPE , applications. ELECTRICAL CHARACTERISTICS (Ta = 25°C), VF = 1,2V MAX @ lF = 200 mA FOR ALL TYPES. TYPE ZENER VOLTAGE VZ@IZ1 TEST CURRENT IZ1 MAXIMUM ZENER IMPEDANCE MAXIMUM REVERSE CURRENT MAXIMUM DC CURRENT >ZM
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CLL4729A CLL4730A CLL4731A CLL4732A CLL4733A CLL4734A zener diode a24 SMD DIODE 517 smd 3y3 melf zener diode smd SMD DIODE zener SOT89 Zener diode melf marking 22

Diode zener smd 152 sot-23

Abstract: SMD DIODE zener SOT89 CENTRAL SEMICONDUCTOR SOE D â  DDODSl? Ã24 â  CEN T U-O SMD zener Diode melf case tow U.S. Specification (Preferred Series) The Central Semiconductor CLL4728A Series Silicon Zener Diode is a high , CLL4764A 100 2.5 350 3000 0.25 5.0 76 45 SMD Zener Diode SOT-89 Case 1 .ow Proelectron Specification TYPE , SOT-89 TRANSISTOR EMITTER COLLECTOR BASE SOT-89 TRIAC GATE MT2 MT1 SOT-89 ZENER DIODE ANODE CATHODE , applications. ELECTRICAL CHARACTERISTICS (Ta = 25°C), VF = 1,2V MAX @ lF = 200 mA FOR ALL TYPES. TYPE ZENER
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Diode zener smd 152 sot-23 TRANSISTOR SMD CODE PACKAGE SOT89 transistor smd xb smd transistor marking 327 Transistor smd code SOT-89 TRANSISTOR Marking XB SOT-89 CLL4735A CLL4736A CLL4737A CLL4738A CLL4739A CLL4740A

zener diode a24

Abstract: ZENER A24 This product complies with the RoHS Directive (EU 2002/95/EC). Zener Diodes MAZ8xxx Series , â'¢ Extremely low noise voltage caused from the diode (2.4 V to 39V, 1/3 to 1/10 of our , '¢ Easy-to-select the optimum diode because of their finely divided zener-voltage ranks â'¢ Guaranteed reliability , Characteristics Ta = 25°C ± 3°C *1 Parameter Forward voltage Zener voltage *2 an Zener rise operating resistance int Reverse current en Zener operating resistance Ma Temperature
Panasonic
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ZENER A24 MA8000 SC-76 MAZ8082

zener diode a24

Abstract: Zener Diodes MAZ8000 Series (MA8000 Series) Silicon planar type 1.25±0.1 0.7±0.1 Unit , caused from the diode (2.4 V to 39 V, 1/3 to 1/10 of our conventional MAZ3000 series) â'¢ Extremely good rising performance (in the low-current range) â'¢ Easy-to-select the optimum diode because of , °C *1 Parameter Forward voltage Zener voltage *2 Symbol Conditions VF IF = 10 mA Min Typ Max Unit 0.9 1.0 V VZ IZ Specified value V Zener knee
Panasonic
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SC-90A MAZ80820H

transistor a110

Abstract: zener diode a24 ) With diode (DC coil only) Reverse polarity coil RU42S-R- RU42S-D- A24, A100, A110, A200, A220 , release time, connect a Zener diode between the collector and emitter of the transistor. Select a Zener diode with a Zener voltage slightly higher than the power voltage. Counter emf suppressing diode + , RU2S- RU4S- With RC (AC coil only) With diode (DC coil only) With diode (DC coil only) Reverse polarity coil RU2S-R- RU2S-D- RU4S-R- RU4S-D- RU2S-D1- RU4S-D1- A24, A100, A110, A200
IDEC
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transistor a110 SA406B transistor a200 latching RELAY 4PDT 12V SY4S-05A SY4S-05D 262-IDEC D-20537 EP1037-1

ZENER A24

Abstract: transistor a110 - RU42S-MR- A110, A220 With diode (DC coil only) 4PDT Bifurcated (3A) RU4V-NF- A24, A110, A220 , release time, connect a Zener diode between the collector and emitter of the transistor. Select a Zener diode with a Zener voltage slightly higher than the power voltage. Terminal Blocks R C Power , (Standard Stock in bold) With Momentary Lever Standard A24, A110, A220 D6, D12, D24, D48, D110 , RU2V-NF- - - A24, A110, A220 D6, D12, D24, D48, D110 Standard RU4S-C- RU4S- RU4S-M
IDEC
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LR35144 EN61810-1 A220 relay 240v 10a pcb RU coil DC 12v A24 zener ZENER DIODE 6A CAPACITY UL508 E66043 800-262-IDEC 888-317-IDEC
Abstract: print heads. A Zener diode is used to increase the flyback voltage, providing a much faster inductive , performance. The maximum Zener voltage, plus the load supply voltage, plus the flyback diode forward voltage , internal flyback/clamp diode for switching inductive leads. They feature a minimum breakdown and , â'"2.4 V ^ â'" 0.9 1.0 V l0UT = 1 0 A, VlN = VE = 2 .4 V N â'" 1.0 1.2 , Open V in * = VE = 0.8 V, Vcc = 5.0 V N Clamp Diode Leakage Current vF lF = 1.0A lF = -
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UDN2540B UDN2544B GP-004-1 DS0433 WP-001

1N45B

Abstract: in4573a power devices, inc. 1N4565-1N4584 1N4565A-1N4584A 500 mW temperature compensated zener reference , silicon devices are low-level, temperature compensated, zener reference diodes. Oxide-passivated junctions , temperature max. dynamic effective 5tabju7y zener zener test temperature , 10-100'c 50 1n4576 20 005 â 24 Olo- 75'C 50 1n4576a 20 005 48 â'¢ 65 lo -100'C 50 1n4577 20 002 10 , diode voltage will no; exceed the specified mV at any discrete temperature between the established limns
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1N45B in4573a 1n456b n057 b IN4571 IN4573 DO-35 1N4565 1N4569 1N4575 1N4579
Abstract: lo(P) 500 mA Characteristic Unit Zener diode current lj(Z0) 200 mA , 1.75V Zener Voltage limit Zener Voltage CD-ROM(Edition 3.0) Vz lv z = 20mA 17 This , . Page : 3 ( KA7521 ) 7^4142 DD32711 18 Ã24 KA7521 ELECTRONICS Industrial D im e n -
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WRA-YQD-20W

Abstract: DC/DC Converters Protection type : Shut off o/p voltage, clamping by zener diode Short Circuit Protection type , ±15 ±667 80 WRA1224YQD-20W 9~18 ±24 ±417 83 WRA2405YQD-20W 18~36  , WRA2415YQD-20W 18~36 ±15 ±667 83 WRA2424YQD-20W 18~36 ±24 ±417 78 , WRA4824YQD-20W 36~72 ±24 ±417 78 WRB1205YQD-20W 9~18 5 4000 79 WRB1212YQD
MICRODC
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WRA-YQD-20W DC/DC Converters microdc WRA-YQD-20 WRB-YQD-20W WRA1215YQD-20W WRA2412YQD-20W WRA4805YQD-20W WRA4812YQD-20W
Abstract: GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the , Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Tstg Operating , ( ) Pulse width limited by safe operating area (1) ISD ≤2.4 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj â STMicroelectronics
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STP3NK60Z STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 STB3NK60Z STD3NK60Z STD3NK60Z-1

p3nk60z

Abstract: P3NK60ZFP Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 150 mJ GATE-SOURCE ZENER DIODE , Derating Factor VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5Kâ"¦) dv/dt (1) Peak Diode Recovery , limi ted by safe operating area (1) ISD ≤2.4 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX , ) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the deviceâ'™s ESD
STMicroelectronics
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P3NK60ZFP p3nk60z b3nk60z d3nk60z STD3NK60ZT4 P3NK60Z STB3NK60ZT4 B3NK60Z

a39 zener diode

Abstract: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications , : mm Average power dissipation: P = 0.7 W Zener voltage: VZ = 6.2~47 V Suitable for compact , (Ta = 25°C) Zener Impedance Zener Voltage Product No. VZ (V) Measurement Current IZ , Measurement Current IZ (mA) Temperature Coefficient of Zener Voltage αT (mV / °C) Forward , ¡13 CRZ13 â¡15 CRZ15 â¡16 CRZ16 â¡18 CRZ18 â¡20 CRZ20 â¡22 CRZ22 â¡24
Toshiba
Original
a39 zener diode
Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET ZENER DIODES RD2.0ES to RD39ES 400 mW DHD ZENER DIODE (DO-34) DESCRIPTION NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction , . FEATURES â'¢ DO-34 Glass sealed package This diode can be inserted into a PC board with a shorter pitch , '¢ DHD (Double Heatsink Diode) construction â'¢ VZ Applied E24 standard ORDERING INFORMATION RD2 Renesas Electronics
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AS4040-2

Abstract: AS4040B-3 ALPHA SEMICONDUCTOR Excellence in Analog Power Products AS4040 Precision Micropower 2.5V Shunt Voltage Reference FEATURES â'¢ Low temperature coefficient 100 ppm/°C â'¢ Operating current range 100(iA to 15 mA â'¢ Low power, 250 mW @ Iin=100 mA â'¢ Two terminal "Zener" operation â'¢ Small , 5.000 5.000 V Reverse Breakdown tolerance IR=500 |i/\ ±24 ±58 ±24 ±58 ±24 ±58 mV mV , Regulator Application SOT-23 The AS4040 in the SOT-23 package has a parasitic Schottky diode between pin 3
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LM4040 AS4040-2 AS4040B-3 AS4040B-2 Design with PIN diode alpha AS4040YN-X-

TEA5500

Abstract: PJ 986 4.5 V 'P 1.8 2.5 3.2 mA Zener diode voltage across supply note 1 vz - - 8 V Inputs E1 to E10 , supply characteristics 1. Maximum Zener diode current 10 mA. October 1990 989 â I 711065L. DIII7T31S , transistor which drives (e.g.) an infrared radiation emitting diode. After every start the encoder completes three coding runs then stops automatically. Decoding In decoding mode an infrared sensitive diode (e.g , internal coding A B f -1 Û23 Û24 Û1 P2 O3 O4 iTinnririnnnjinr recognition code MlAltS- 1
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TEA5500 TEA5500T PJ 986 R/pj 989 diode iclock 990 E9H diode 16-LEAD E10-E1 IBC558 BC327 TEA5551

BPW50

Abstract: coy89a voltage (pin 16) vP 3 4.5 6.5 V Supply current Vp = 4.5 V 'p 1.8 2.5 3.2 mA Zener diode voltage across , '" mA Voltage at output V0 â'" â'" 16 V Note to the supply characteristics 1. Maximum Zener diode , emitting diode. After every start the encoder completes three coding runs then stops automatically. Decoding In decoding mode an infrared sensitive diode (e.g.) is connected to the data input via an , Uli 923 °24 Qi 02 Qa Q4 innnr [onnnnnr recognition code M LA 195-1 encoding E1 E2
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BPW50 coy89a zener diode E7 E9 amplifier E9 amplifier 16 pin COY89A 7Z81692 MLA196-
Abstract: 4) By Zener diode (V cc- V ee& 6V ) â  108 b cl 3 2 f l S 5 001240b Panasonic , Parameter Differential input voltage V,D ±24 Common-mode input voltage VlCM ±12 V , .The AN6550 is an operational amplifier with a phase â'¢ l) By diode compensation circuit built-in -
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AN6551

riaa preamplifier circuit diagram

Abstract: AN6551 equivalent to GND 1) By diode 3) By dividing with resistors 9 Vcc R,= 10kfi 4) By Zener diode (Vcc-Vee , to Vcc V Differential input voltage V,d ±24 V Common-mode input voltage VlCM ±12 V Power
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SIP009-P-0000 riaa preamplifier circuit diagram AN6551 equivalent Operational Amplifiers how to

riaa preamplifier circuit diagram

Abstract: Operational Amplifiers how to with resistance. 4) By zener diode. (Vcc â'"VeeS6V) Panasonic _ 106 _ This Material Copyrighted By , External Bias Supply Voltage VKiT VEE~Vcc V Differential Input Voltage V1U ±24 V Common-Mode Input , , except for pin connection. Set VE XT 1) By diode 105 Panasonic This Material Copyrighted By Its
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operational amplifiers circuit diagram RIAA preamplifier 01//F
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