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Part Manufacturer Description Datasheet BUY
LM431CIZ/LFT1 Texas Instruments Adjustable Precision Zener Shunt Regulator 3-TO-92 visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

zener diode A39

Catalog Datasheet MFG & Type PDF Document Tags

a39 zener diode

Abstract: zener diode A39 zener diode "breakdown." If the voltage tries to rise above Vz current flows through the zener branch , , the LED is parallel with zener diode. if either piece of LED is no light up but current can flow , :DLE-033-A39 Established date:08-08-2005 Rev Water Clear 1 Page: 1 of 9 Established , mW Zener Reverse Current Iz 100 mA Electrostatic Discharge ESD 4K V Everlight Electronics Co., Ltd. http\\:www.everlight.com Device Number:DLE-033-A39 Established date
EVERLIGHT
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zener diode A36

Abstract: zener diode A29 Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 ­ CAZ23C51 Features and Advantages: Surface mount package for automatic assembly process High precision Zener voltage (VZ) (Note3.) Small Zener diode dynamic impedance(ZZT) Low standby reverse current(VR) (Note4.) Very high , otherwise specified) Zener Part Type Marking Codes Voltage Max. Zener Impedance Vz@IZT , A25 A26 A27 A28 A29 A30 A31 A32 A34 A35 A36 A37 A39 A40 A41 A42 A43 A45 A46 A48
Silicon-Based Technology
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zener diode A36 zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener MIL-STD-202 J-STD-020C CAZ23CXVX CAZ23C27 CAZ23C30 CAZ23C33

zener diode A29

Abstract: ZENER A29 Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 ­ CAZ59C51 Features and Advantages: Surface mount package for automatic assembly process High precision Zener voltage (VZ) (Note3.) Small Zener diode dynamic impedance(ZZT) Low standby reverse current(VR) (Note4.) Very high , self-heating effect. Electrical Characteristics : (@TA=25°C unless otherwise specified) Zener Part Type Marking Codes Voltage Max. Zener Impedance Vz@IZT ZZT@IZT IR@VR ZZK@IZK NomV
Silicon-Based Technology
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a23 zener A26 zener marking codes A32 a59 zener diode a51 ZENER DIODE zener diode A39 SC-59 CAZ59CXVX CAZ59C27 CAZ59C30 CAZ59C33 CAZ59C36

a39 zener diode

Abstract: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications , : mm Average power dissipation: P = 0.7 W Zener voltage: VZ = 6.2~47 V Suitable for compact , (Ta = 25°C) Zener Impedance Zener Voltage Product No. VZ (V) Measurement Current IZ , Measurement Current IZ (mA) Temperature Coefficient of Zener Voltage αT (mV / °C) Forward , ¡24 CRZ24 â¡27 CRZ27 â¡30 CRZ30 â¡33 CRZ33 â¡36 CRZ36 â¡39 CRZ39 â
Toshiba
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a39 zener diode
Abstract: Diode Fairchild 8 D2 1N5241 1 11V Zener Diode Fairchild 9 D3 1N4003 1 1A/200V Diode Fairchild 10 D4 RS1M 1 1A/1000V Diode Fairchild 11 D5 , Current fIN ±65mA Output Current Ripple , Primary MOSFET Temperature TDIODE 47ºC Secondary Diode Temperature TTRANSFORMER 52ºC , Manufacturer 1 Q1 MB8S 1 Bridge Diode Fairchild 2 Q2 FQN1N50C 1 1A/500V Active Fairchild Semiconductor
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FEBFL7730 L20L008A FL7730

a39 zener diode

Abstract: particularly well suited for bridge circuits w here diode speed and commutating safe operating area are , s â'˜ ' 25 A M P ER ES rDS(on) = 0.08 OHM 60 V O LT S â'¢ Internal Source-to-Drain Diode Designed to Replace External Zener Transient Su pp ressor â'" Absorbs High Energy in the Avalanche Mode â , Operating Area (CSOA) Specified for U se in Half and Full Bridge Circuits â'¢ Source-to-Drain Diode Recovery Tim e Com parable to a Discrete Fast Recovery Diode â'¢ Diode Is Characterized for U se in
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OCR Scan
MTP25IM06E MTP25N06E TQ-220AB
Abstract: , 600V, 1.7A, 2.97â"¦ BR 1 - Bridge Rectifier, 1A, 400V TOREX Zener Diode, 12V , , 6.4â"¦ 12.7x12.7 SRR1208-332KL BOURNS D1 1 - Diode, Fast Rec., 0.7A, 200V SOD , D1 1 - Diode, Fast Rec., 1.0A, 1000V SMA STTH110A STMicroelectronics D2 1 - Diode, Fast Rec., 1.0A, 200V SMB MURS120T3G On semiconductor D3 1 - Diode Torex Semiconductor
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XC9401 100VAC/110VAC 220VAC/240VAC
Abstract: Diode, Fast Rec., 0.7A, 200V SOD-123 RF071M2S Rohm ZD1 1 - R3 1 2.2â"¦ Zener Diode, 12V Smin2-F5-B DZ2J120M0L Panasonic Resistor, Chip, 0.1W, 50V 1608 RMC1 , 1 - Diode, Fast Rec., 1.0A, 1000V SMA STTH110A STMicroelectronics D2 1 - Diode, Fast Rec., 1.0A, 200V SMB MURS120T3G On semiconductor D3 1 - Diode, Fast Rec Torex Semiconductor
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220VAC/240

water level detect alarm

Abstract: alarm system with constant current source Every 24 clock cycles a check is made for low battery by comparing Vdd to an internal zener voltage , diode protection against static damage. LOW BATTERY THRESHOLD The low battery voltage level is set , .27Ã 6.35 6.85 C Ã.145 Ã.175 3.69 4.44 D Ã.Ã15 Ã.Ã21 Ã.39 Ã.53 F Ã.Ã4Ã Ã.7Ã 1.02 1.77 G
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OCR Scan
MC14600 water level detect alarm alarm system with constant current source piezoelectric alarm motorola CIRCUIT piezoelectric SENSOR 40 KHZ MC14600DW MC14600/D
Abstract: used on complete DC.) (+) (â'") Internal Circuit LED Chip Protection Diode Zener Diode , factory aplications. â'¢â'¢The LED lamp contains a current-limiting resistor and a diode for protection , Code AL6M-M11P➁ Switches & Pilot Lights â'¢â'¢See page A-39 for dimensions. â'¢â'¢See page , : green JW: pure white R: red S: blue W: white Y: yellow â'¢â'¢See page A-39 for dimensions , Products Information A-39 ø16 A6 Series Pushbuttons Pushbuttons #8; Package Quantity: 1 Shape IDEC
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UL508 E55996 EN60947-5-1 GB14048 AL6M-M24 AL6M-M221

NIKKO NR 9600

Abstract: Triac bt 808 600cw  SEMiCON INDEX O' i i< I § VOLUME 2 INTERNATIONAL DIODE and THYRISTOR INDEX 17th Edition , DICKSON ELECTRONICS CORPORATION* DIX ABB-IXYS SEMICONDUCTOR GmbH IXY DIODE TRANSISTOR I NC. DIT ABB , Division AEI CMI, INC.* GENERAL DIODE CORP. GED COLLMER SEMICONDUCTOR INC. COL GE / GENERAL ELECTRIC , INTERNATIONAL COMPONENTS CORPORATION INC INTERNATIONAL DIODE CORPORATION IND INTERNATIONAL RECTIFIER CORP. IRG , POWER SEMICONDUCTORS OPT OPTO DIODE CORP. OPD OPTRON, INC.' OSHINO LAMPS LTD. OSH OXLEY
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NIKKO NR 9600 Triac bt 808 600cw GDS C25/0 BT135 2U12 sony KSM 213 DCP

diode ZENER A26

Abstract: B26 ZENER DIODE (typical) by the voltage divider resistor (R32 = 390 ) and the Zener diode D2. When the OXU200 is connected to a host, the Zener diode protects the OXU200 from damage. Zener diode: ON Semiconductor , TRDY# GND_A37 STOP# +3.3V_A39 RESERVED_A40 RESERVED_A41 GND_A42 PAR AD[15] +3.3V_A45 AD[13 , A37 A38 A39 A40 A41 A42 A43 A44 A45 A46 A47 A48 A49 A1 A2 A3 A4 A5 A6 A7 A8 A9
Oxford Semiconductor
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B26 ZENER DIODE b17 zener diode b37 zener PC104-64 zener Diode B23 B20 zener diode UG-0038 EV-OXU200-PCI EV-OXU200 PC104 PLCC-32 PCI104
Abstract: signal (such as music) at maximum levels. If PVDD peaks above 6.2V, connect a 6V Zener diode between , SPHERICAL CROWNS OF THE BALLS. E. PACKAGE NOMINAL HEIGHT IS 586 MICRONS ±39 MICRONS (547-625 MICRONS). Fairchild Semiconductor
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FAB3103 MKT-UC012AE FAB3103UCX

a37 zener

Abstract: A) SERIES PROTECTION RESISTOR B) ZENER DIODE RESISTOR Figure 12 - Power Supply Over-Voltage , immunity, then the alternative is to connect a zener diode between VDD and VSS to prevent over-voltages , very small, limited only by the power handling capacity of the zener diode. There is one last , -34 MSAN-107 Application Note diode is fabricated in close proximity to an N-channel transistor (Fig. 7) or when the VSS referenced diode is located close to a P-channel device. (Fig. 8). VDD
Mitel Semiconductor
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A43 ZENER DIODE

Abstract: MD74SC540AC injects current into the P- well causing a second SCR Figure 7 - Input SCR Structure with VDD Diode A-39 , A) SERIES PROTECTION RESISTOR B) ZENER DIODE RESISTOR Figure 12 - Power Supply Over-Voltage , immunity, then the alternative is to connect a zener diode between VDD and VSS to prevent over-voltages , very small, limited only by the power handling capacity of the zener diode. There is one last , -38 MSAN-107 Application Note diode is fabricated in close proximity to an N-channel transistor (Fig
Mitel Semiconductor
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A43 ZENER DIODE MD74SC540AC

digital triggering scr

Abstract: zener diode A36 V DD Diode A-39 MSAN-107 Application Note Figure 8 - Input SCR Structure with V SS Diode , A) SERIES PROTECTION RESISTOR B) ZENER DIODE RESISTOR Figure 12 - Power Supply Over-Voltage , immunity, then the alternative is to connect a zener diode between VDD and VSS to prevent over-voltages , very small, limited only by the power handling capacity of the zener diode. There is one last , Structures A-38 MSAN-107 Application Note diode is fabricated in close proximity to an N-channel
Mitel Semiconductor
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digital triggering scr regulated bipolar power supply connection 12V design of mosfet based power supply detailed circuit on high voltage off scr High power SCR mosfet power supply

zener 11B1

Abstract: zener diode A36 A) SERIES PROTECTION RESISTOR B) ZENER DIODE RESISTOR Figure 12 - Power Supply Over-Voltage , immunity, then the alternative is to connect a zener diode between VDD and VSS to prevent over-voltages , very small, limited only by the power handling capacity of the zener diode. There is one last , -34 MSAN-107 Application Note diode is fabricated in close proximity to an N-channel transistor (Fig. 7) or when the VSS referenced diode is located close to a P-channel device. (Fig. 8). VDD
Zarlink Semiconductor
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zener 11B1 TRANSISTOR a32 diode ZENER A37 A-31

digital triggering scr

Abstract: MSAN-107 A) SERIES PROTECTION RESISTOR B) ZENER DIODE RESISTOR Figure 12 - Power Supply Over-Voltage , immunity, then the alternative is to connect a zener diode between VDD and VSS to prevent over-voltages , very small, limited only by the power handling capacity of the zener diode. There is one last , -34 MSAN-107 Application Note diode is fabricated in close proximity to an N-channel transistor (Fig. 7) or when the VSS referenced diode is located close to a P-channel device. (Fig. 8). VDD
Zarlink Semiconductor
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zener 11B1

Abstract: Schottky Diodes A36 A) SERIES PROTECTION RESISTOR B) ZENER DIODE RESISTOR Figure 12 - Power Supply Over-Voltage , immunity, then the alternative is to connect a zener diode between VDD and VSS to prevent over-voltages , very small, limited only by the power handling capacity of the zener diode. There is one last , -34 MSAN-107 Application Note diode is fabricated in close proximity to an N-channel transistor (Fig. 7) or when the VSS referenced diode is located close to a P-channel device. (Fig. 8). VDD
Zarlink Semiconductor
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Schottky Diodes A36
Abstract: (500kHzfor LT1510-5) gives high charging efficiency and small inductor size. A block­ ing diode is not , DIODE D3) 96 " V ba r = 8.4 t/ 94 92 90 / / / r 0.1 0.3 0.5 0.7 0.9 1.1 , Schottky catch diode must be placed with very short lead length in close proximity to SW pin and GND , starts and switching stops when V qc goes below 7V. Note that there is a parasitic diode inside from SW , released, as set by the 0.1 |o at V q F pin. Higher lockout voltage can be implemented with a Zener -
OCR Scan
LT1510/LT1510-5 LT1372/LT1377 LT1373 LT1376 LT1511 LT1512
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