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HIP6601BCBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HS0-4424RH-Q Intersil Corporation BUF OR INV BASED MOSFET DRIVER visit Intersil
ISL6596CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6605IRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6609ACRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy
HIP2100EIB Intersil Corporation 2A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, EPSOIC-8 visit Intersil

y parameter of mosfet

Catalog Datasheet MFG & Type PDF Document Tags

all mosfet equivalent book

Abstract: book mosfet verification on the design of mass production set. y This block diagram is for explaining functions. Part of , for radiation of heat Power supply Power supply pin Output Power MOSFET output pin Bottom View , Integrated Power MOSFET Overview NN30196A is a synchronous DC-DC Step Down Regulator (1-ch) with , suddenly, it responds at high speed and minimizes the changes of output voltage. Since it is possible to , compensation, this IC realizes downsizing of set and reducing in the number of external parts. Output voltage
Panasonic
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all mosfet equivalent book book mosfet DDFS

mosfet marking code c0

Abstract: N-Channel Power MOSFET Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case , N-Channel Power MOSFET Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb , : B13 TSM4NB65 650V N-Channel Power MOSFET Unit: Millimeters Marking Diagram Y = Year Code M , TSM4NB65 650V N-Channel Power MOSFET Unit: Millimeters Marking Diagram Y = Year Code M = Month , TSM4NB65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3
Taiwan Semiconductor
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mosfet marking code c0 TSM4NB60 TSM4NB65CH TSM4NB65CP TSM4NB65CZ TSM4NB65CI
Abstract: Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G Y WW F = , N-Channel Power MOSFET TO-251 (IPAK) Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year , MOSFET TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y M L = Year Code = , TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 500 V RDS(on Taiwan Semiconductor
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TSM6N50CI TSM6N50CP TSM6N50CH
Abstract: Technologies Co., Ltd 1 of 9 QW-R502-061.Y 4N60  Power MOSFET ORDERING INFORMATION Ordering , www.unisonic.com.tw 2 of 9 QW-R502-061.Y 4N60  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 , CO., LTD www.unisonic.com.tw 8 of 9 QW-R502-061.Y 4N60 Power MOSFET UTC assumes no , QW-R502-061.Y 4N60  Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise , 4.4 A 17.6 A 2.0 250 1.5 ns μC 4 of 9 QW-R502-061.Y 4N60  Power Unisonic Technologies
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4N60L-TA3-T 4N60G-TA3-T 4N60L-TF1-T 4N60G-TF1-T 4N60L-TF2-T 4N60G-TF2-T

13 Mhz mosfet

Abstract: MOSFET's. Each driver is capable of driving a 3000pF load in 30ns rise/fall time and has a 20ns max , o d a y ' sR e s u lt s . t o m o r r o w 's V is io HIGH SPEED SYNCHRONOUS POWER MOSFET SMART , T o d a y ' sR e s u lt s . t o m o r r o w 's V is io HIGH SPEED SYNCHRONOUS POWER MOSFET , to the junction of the switching and synchronous MOSFET's. This pin can be subjected to a -2V minimum , ti T o d a y ' sR e s u lt s . t o m o r r o w 's V is io HIGH SPEED SYNCHRONOUS POWER MOSFET
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OCR Scan
13 Mhz mosfet SC1405 L805-498-2111 TSSOP-14
Abstract: N-Channel Power MOSFET Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case , TSM4NB60 600V N-Channel Power MOSFET TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y , MOSFET TO-251 Mechanical Drawing Unit: Millimeters Marking Diagram Y M L = Year Code = , TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3 , Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new Taiwan Semiconductor
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TSM4NB60CH TSM4NB60CP TSM4NB60CZ TSM4NB60CI
Abstract: N-Channel Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y G WW F , N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code , MOSFET Notice Specifications of the products displayed herein are subject to change without notice , TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3 , Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced Taiwan Semiconductor
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TSM3N90CH TSM3N90CP TSM3N90CZ TSM3N90CI
Abstract: N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change , TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source , -251 (IPAK) TO-252 (DPAK) The TSM4NB60 N-Channel Power MOSFET is produced by new advance planar process. This , / Tube N-Channel MOSFET TSM4NB60CI C0 ITO-220 Note: "G" denotes for Halogen Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Taiwan Semiconductor
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NN30310A

Abstract: HQFN024-A3-0404 comprising of Controller IC and Power MOSFET Overview NN30310AA is a synchronous DC-DC Step down Regulator (1-ch) comprising of a Controller IC and two Power MOSFET, and employs the hysteretic control system , AGND Notes) y This application circuit is an example. The operation of mass production set is not , design of your equipment. y This block diagram is for explaining functions. Part of the block diagram may , Power supply pin for Power MOSFET Ground Ground pin for radiation of heat Power supply Power supply
Panasonic
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HQFN024-A3-0404 NN30310A

TO-252 N-channel MOSFET

Abstract: 600v 4A mosfet /11 Version: G12 TSM4N60 600V N-Channel Power MOSFET Thermal Performance Parameter Thermal , N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change , TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source , -251 (IPAK) TO-252 (DPAK) The TSM4N60 N-Channel Power MOSFET is produced by new advance planar process. This , -252 2.5Kpcs / 13" Reel Note: "G" denotes for Halogen Free N-Channel MOSFET Absolute Maximum Rating (Ta =
Taiwan Semiconductor
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TO-252 N-channel MOSFET 600v 4A mosfet TSM4N60CZ TSM4N60CI TSM4N60CH TSM4N60CP M4N60

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Abstract: AF8510C AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET General Description Features The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized , -8 Ordering information A X Feature F :MOSFET 8510C X X PN Package Packing S: SOP-8 Blank , of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Nov 14, 2005 1/8 AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Absolute Maximum
Anachip
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N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Abstract: TSM4NB60 600V N-Channel Power MOSFET Thermal Performance Parameter Symbol Thermal Resistance - , TSM4NB60 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are , TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3 , Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new , ITO-220 Note: â'Gâ' denotes for Halogen Free N-Channel MOSFET 50pcs / Tube Absolute Taiwan Semiconductor
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mosfet "marking code 44"

Abstract: Version: B11 TSM2NB60 600V N-Channel Power MOSFET Notice Specifications of the products displayed , TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source , -251 (IPAK) TO-252 (DPAK) The TSM2NB60 N-Channel Power MOSFET is produced by new advance planar process. This , / Tube N-Channel MOSFET TSM2NB60CI C0 ITO-220 Note: "G" denotes for Halogen Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous
Taiwan Semiconductor
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mosfet "marking code 44" TSM2NB60CH TSM2NB60CP TSM2NB60CZ

nn30312

Abstract: all mosfet equivalent book of mass production set. y This block diagram is for explaining functions. Part of the block diagram , Power MOSFET Ground Ground pin for radiation of heat Power supply Power supply pin Output Power , Power MOSFET NN30312A is a synchronous DC-DC Step Down Regulator (1-ch) with integrated power MOSFETs , at high speed and minimizes the changes of output voltage. Since it is possible to use capacitors , IC realizes downsizing of set and reducing in the number of external parts. Output voltage is
Panasonic
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nn30312
Abstract: "¦ N-Channel Power MOSFET Thermal Performance Parameter Limit Symbol Junction to Case Thermal , Version: A14 TSM60N900 600V, 4.5A, 0.9â"¦ N-Channel Power MOSFET Notice Specifications of the , TSM60N900 600V, 4.5A, 0.9â"¦ N-Channel Power MOSFET ITO-220 TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 , TO-251 75pcs / Tube N-Channel MOSFET TSM60N900CP ROG TO-252 2.5kpcs / 13â' Reel Note Taiwan Semiconductor
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TSM60N900CI TSM60N900CH
Abstract: TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R105-001.B UT4800 Ì Power MOSFET T Y PI CAL , SOP-8 SOP-8 Tape Reel Tube 1 of 5 QW-R105-001.B UT4800 Ì Power MOSFET PI N CON FI , 30 3 of 7 QW-R105-001.B UT4800 Drain Current,ID (A) T Y PI CAL CH ARACT ERI ST I CS , UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R105-001.B UT4800 Ì Power MOSFET , UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R105-001.B UT4800 T Y PI CAL CH ARACT Unisonic Technologies
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UT4800L-S08-R UT4800G-S08-R UT4800L-S08-T UT4800G-S08-T

all mosfet equivalent book

Abstract: POWER MOSFET DATA BOOK (Typ) MOSFET for high efficiency y Switchable FCCM (continuous) / SKIP (discontinuous) mode y Input , evaluation and verification on the design of mass production set. y This block diagram is for explaining , Power MOSFET Ground Ground pin for radiation of heat Power supply Power supply pin Output Power , Integrated Power MOSFET Overview NN30311A is a synchronous DC-DC Step Down Regulator (1-ch) with , suddenly, it responds at high speed and minimizes the changes of output voltage. Since it is possible to
Panasonic
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POWER MOSFET DATA BOOK

4502c mosfet

Abstract: 4502c & N-Channel 30-V (D-S) MOSFET Specifications (TA=25ºC unless otherwise noted) Symbol Parameter , AF4502C P & N-Channel 30-V (D-S) MOSFET Features General Description -Low rDS(on) Provides , ) SOP-8 Ordering information A X Feature F :MOSFET 4502C X X X PN Package Lead Free , product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Jul 20, 2004 1/8 AF4502C P &
Anachip
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4502c mosfet 4502C AA mosfet 4502c P channel MOSFET 10A 4502c datasheet P N-Channel D-S MOSFET

PN channel MOSFET 10A

Abstract: 4910N AF4910N N-Channel Enhancement Mode Power MOSFET General Description Features The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device , AF4910N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS Parameter , On-resistance - Dual N MOSFET Package Product Summary BVDSS (V) 30 RDS(ON) (m) 14 ID (A) 10 Pin , Drain D2 SOP-8 Ordering information A X Feature F :MOSFET 4910N X X X PN Package
Anachip
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PN channel MOSFET 10A

TRANSISTOR MOSFET K 1249

Abstract: MOSFET 546 microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate , dual-gate MOS-FET BF904WR MLD277 10 2 handbook, halfpage MLD278 10 3 y is (mS) 10 3 , function of frequency; typical values. MLD279 10 2 y fs MLD280 10 2 10 handbook , DISCRETE SEMICONDUCTORS DATA SHEET BF904WR N-channel dual-gate MOS-FET Product , Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR FEATURES PINNING ·
Philips Semiconductors
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TRANSISTOR MOSFET K 1249 MOSFET 546 Dual-Gate Mosfet MOSFET 2301 fet MARKING g2 marking code mc MAM192 MSB367
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