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BGU6101,147 NXP Semiconductors BGU6101 - Wideband silicon low-noise amplifier MMIC visit Digikey
116156-HMC564LC4 Hittite Microwave Corp BOARD EVAL LNA MMIC HMC564 visit Digikey
BGU6102,147 NXP Semiconductors BGU6102 - Wideband silicon low-noise amplifier MMIC visit Digikey
BGU6104,147 NXP Semiconductors BGU6104 - Wideband silicon low-noise amplifier MMIC visit Digikey
110431-HMC516LC5 Hittite Microwave Corp BOARD EVAL LNA MMIC HMC516 visit Digikey
934067956115 NXP Semiconductors IC MMIC LNA visit Digikey

x-band mmic lna

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Abstract: 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , 1. TB = MMIC Base Temperature 20 dBm 13 20 dB 13 20 dB - 2/6 RO-P-DS-3002 - - X-Band 10W Limiter/ 2-stage LNA MA01502D Maximum Operating Conditions 1 , -4.5 -5.0 -5.5 V Junction Temperature TJ 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150°C - 33.1 °C/W * VDD * IDQ Operating M/A-COM
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x-band limiter LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic 6 ghz amplifier 10w
Abstract: 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , W 1. TB = MMIC Base Temperature 20 dBm 13 20 dB 13 20 dB V1.00 X-Band 10W Limiter/ 2-stage LNA 2/6 MA01502D Maximum Operating Conditions 1 Parameter , -5.5 V Junction Temperature TJ 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150°C - 33.1 °C/W * VDD * IDQ Operating Instructions This M/A-COM
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x-band MMIC limiter x-band lna chip band Limiter mmic AMPLIFIER x-band 10w
Abstract: 23 dBm 1. TB = MMIC Base Temperature - 2/6 RO-P-DS-3061 - - X-Band LNA , 8.0-12.0 GHz GaAs MMIC Amplifier Features 2.3 dB Noise Figure 8.0-12.0 GHz Operation , 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150 , sheets and product information. RO-P-DS-3061 - - X-Band LNA 3/6 MAALGM002-DIE 30 6 Gain , www.macom.com for additional data sheets and product information. RO-P-DS-3061 - - X-Band LNA 4/6 M/A-COM
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MAALGM0002-DIE X-band low noise N4 MMIC BVA80UM RFPRO150Z PAD1504I
Abstract: 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , ) PRF 10 W 1. TB = MMIC Base Temperature 2/7 RS-O-P-DS-3003 - - X-Band 10W Limiter/ 3-stage LNA MA01503D Maximum Operating Conditions 1 Parameter Absolute Maximum Symbol Units , Temperature TJ 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base , sheets and product information. RS-O-P-DS-3003 - - X-Band 10W Limiter/ 3-stage LNA 3/7 M/A-COM
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RO-P-DS-3003
Abstract: MMIC Base Temperature RO-P-DS-3061 - - 2/6 X-Band LNA Maximum Operating Conditions 1 , Information 8.0-12.0 GHz GaAs MMIC Amplifier Features 2.3 dB Noise Figure 8.0-12.0 GHz Operation , Characteristic Drain Voltage Gate Voltage Junction Temperature MMIC Base Temperature Symbol VDD VGG TJ TB Min 2.5 -2.0 Typ 3.0 -0.6 Max 5.0 -0.4 150 Note 2 Unit V V °C °C 2. Maximum MMIC Base Temperature = 150°C - , sheets and product information. RO-P-DS-3061 - - 3/6 X-Band LNA 30 MAALGM002-DIE 6 Gain 25 M/A-COM
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X-band lna
Abstract: PRELIMINARY · X-BAND LNA MMIC PERFORMANCE 7.0 ­ 11.0 GHz Operating Bandwidth 1.5 dB , Revised: 11/22/04 Email: sales@filcsi.com PRELIMINARY · FMA219 X-BAND LNA MMIC ABSOLUTE , /semis Revised: 11/22/04 Email: sales@filcsi.com PRELIMINARY · FMA219 X-BAND LNA MMIC , PRELIMINARY · FMA219 X-BAND LNA MMIC TYPICAL RF PERFORMANCE (VDD = +3V, IDD = IOP) FMA219 FREQUENCY , ://www.filtronic.co.uk/semis Revised: 11/22/04 Email: sales@filcsi.com PRELIMINARY · FMA219 X-BAND LNA MMIC Filtronic
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FMA219BF bc 408 equivalent LNA 9GHz MIL-HDBK-263
Abstract: X-BAND LNA MMIC · DESCRIPTION AND APPLICATIONS The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over the 7.0 to 11.0 GHz bandwidth. The amplifier requires a , Dissipation Gain Compression 1 FMA219 X-BAND LNA MMIC Symbol VDD IDD PIN TSTG PTOT Comp. 2 2 Test , :// www.filcs.com Revised: 8/16/04 Email: sales@filcsi.com PRELIMINARY FMA219 X-BAND LNA MMIC · , X-BAND LNA MMIC 4.0 14.0 3.5 12.0 Output Power (dBm) Pout@11GHz Comp@7GHz 3.0 Filtronic
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Abstract: ) PRF 10 W 1. TB = MMIC Base Temperature V1.00 X-Band 10W Limiter/ 3-stage LNA 2/7 , 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150 , information. V1.00 X-Band 10W Limiter/ 3-stage LNA 3/7 MA01503D Typical Small Signal Characteristics (VDD=5V, VGG=-5V) TYPICAL MEASURED GAIN AND NOISE FIGURE OF THE THREE-STAGE LIMITER/LNA 2 5.0 2 M/A-COM
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LNA XBAND
Abstract: amplifier, and switches are contained in a multifunction MMIC. The LNA MMIC features an integrated limiter that handles up to 10W of CW input signals. The power amplifier MMIC provides 20W of output power , May 2006 A Three MMIC Solution for an X-band RF Front End by M/A-COM Introduction /A-COM has , Figure 2: MSAG MTTF Curve Figure 1: X-band Radar GaAs MMIC Chipset Figure 3: MAFMGM0001-DIE Block , Multi-function MMIC Cost is a significant driver in today's phase array radar systems. Savings at the MMIC M/A-COM
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MAMFGM0001-DIE GAAS FET AMPLIFIER x-band 10w radar block diagram diagram radar circuit radar system with circuit diagram x-band microwave fet x band radar MAAPGM-0079-DIE MAAP000079-PKG001 MAAPGM0079-DIE
Abstract: GaAs MMIC PROCESSES ENABLE MULTI-FUNCTION INTEGRATION, INCREASING RELIABILITY WHILE REDUCING CHIP , market has become the driving force for the GaAs MMIC industry. As the very low-cost requirements of , of the defense market, a number of GaAs MMIC suppliers have exited the defense market. This article , microwave and digital FETS can be fabricated on a single MMIC, with each microwave device independently , . Cost Drivers Yield is the prime MMIC cost driver. MSAG yields, even for very complex chips, are -
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X band 5-bit phase shifter microwave transceiver MMIC s-band x-band power transistor X-band GaAs pHEMT MMIC Chip MMIC s-band phase shifter
Abstract: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While , , the exploding commercial wireless market is breathing new life into the GaAs MMIC industry. As the , needs and longer time horizon of the defense market, a number of GaAs MMIC suppliers have exited the , layers. Both microwave and digital FETS can be fabricated on a single MMIC, with each microwave device , realization of Figure 1. (above) Arrhenius Plot of MSAG Power MMIC Accelerated RF Life Test (~2 dB M/A-COM
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X band attenuator 2 Watt S-Band Power Amplifier microwave limiter S-band mmic Watt ka band power mmic ka band lna
Abstract: Application Note M542 Electrical Characterization of Packages for Use with GaAs MMIC , our MMIC amplifier products which cover frequencies up to 12 GHz. In addition, the technique has been employed to characterize injection-molded plastic packages and to evaluate nonprobeable MMIC's. Therefore, to evaluate and identify candidate packages for each of the amplifiers in our MMIC amplifier , our MAAM71200-H1, a packaged 7-12 GHz GaAs MMIC low noise amplifier. 1 Visit www.macomtech.com M/A-COM
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71200-H1 y-parameter maam 23000-A1 MAAM28000-A1 mmic case styles X-band low noise amplifiers
Abstract: Electrical Characterization of Packages for Use with GaAs MMIC Amplifiers Abstract A test , microwave packages in order to identify appropriate packages for our MMIC amplifier products which cover , plastic packages and to evaluate non-probeable MMIC's. Introduction Most package vendors have very , . Therefore, to evaluate and identify candidate packages for each of the amplifiers in our MMIC amplifier , for Use with GaAs MMIC Amplifiers fixture practically any DUT, all that is needed is a brass plate M/A-COM
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OXLEY 02350-A2 12000-A1 23000-A1 37000-A1 28000-A1 26100-B1
Abstract: power limiter/LNA MMIC is shown in Figure 1. Figure 2 shows the photograph of the twostage balanced , the commercially available M/A-COM limiter/LNA MMIC [1]. This limiter/LNA has an operating bandwidth , . MA01502D, a commercially available C/X-band integrated LNA/Limiter. MMIC size: 4.6 ×3.1 mm. and they were , An Examination of Recovery Time of an Integrated Limiter/LNA Jim Looney, David Conway, and Inder , military microwave systems. Due to the fine geometry used in MMIC transistors, these circuits are -
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directional coupler chip 8 GHz electromagnetic pulse generator 5310 circulator monolithic transistor mesfet 150-MH 500-MH
Abstract: Semiconductors (UMS) has a considerable heritage in the design and production of MMIC solutions for space and , and receive paths. The company's X-band T/R modules, composed of a low noise amplifier (LNA), a core , volume, single recess 0.25 um gate length pHEMT process is used for the LNA and core chips. Two , stability of the device. LNA and Core Chips The CHA1014 is a 7 to 14 GHz, 50 matched LNA designed to be used with the LNA United Monolithic Semiconductors SAS France MICROWAVE JOURNAL n OCTOBER -
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CHA8100 x-band mmic core chip CHA7215 mmic core chip pulse compression radar wide band phase shifter HB20P
Abstract: Applications The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates from 7-11 GHz with a typical mid-band noise figure of 0.7 dB. · · Radar X band LNA, ECM Measured Fixtured , 1.4 Noise Figure (dB) 1.2 The TGA2600-EPU LNA is suitable for a variety of C and X band , !ÃÃÃÃÃWqÃÃÃÃÃÃÃÃÃÃÃÃÃ&$ÃÃ&$Ã"ÃÃ" 7qÃhqÃÆ"ÃÃÃÃÃSAÃPÃÃÃÃÃÃ&$ÃÃ $Ã"ÃÃ% 7qÃhqÃÆ#ÃÃÃÃÃWt ÃÃÃÃÃÃÃÃÃÃÃ&$ÃÃ&$Ã"ÃÃ" GaAs MMIC devices are , Assembly Diagram 9G S) 5) ,1 5) 287 S) 9J GaAs MMIC devices are susceptible to TriQuint Semiconductor
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TGA2600 noise jammer
Abstract: '¢ Military Radar LNA Receiver Chain Protection Fixtured Measured Performance -3 -1.0 -6 -1.5 , Data Sheet November 15, 2006 TGL2201 Mechanical Drawing GaAs MMIC devices are susceptible to , . Maximum stage temperature is 200 °C. GaAs MMIC devices are susceptible to damage from Electrostatic TriQuint Semiconductor
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Abstract: Radar LNA Receiver Chain Protection Fixtured Measured Performance -3 -1.0 -6 -1.5 -9 , 3 Product Data Sheet November 15, 2006 TGL2201 Mechanical Drawing GaAs MMIC devices , . Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic TriQuint Semiconductor
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Abstract: UMS X-BAND Tx-Rx CHIPSET The complete Solution for Military & Space Phased Array Radar Digital attenuator Core Chip Rx out Tx In Driver + HPA TTL Interface LNA Phase Shifter â'¢ #7; HC3014(1) Core chip (a 6-bit phase shifter, a 6-bit attenuator, an additional 2-bit attenuator for C tuning, self-biased buffer amplifiers and switches). Freq. (GHz) Gain Rx-Tx (dB) Rx , package. These MMIC devices are catalogue products. Complete datasheets and additional information can United Monolithic Semiconductors
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CHA5014 CHA5115 CHA7114 CHA7115
Abstract: LNA, ECM The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates from 7-11 , The TGA2600-EPU LNA is suitable for a variety of C and X band applications such as radar receivers , * [ [ [ [ [ [ [ [ [ [ GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be , : To Q2 Q1 : 470 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge , should not be used. Maximum stage temperature is 150 °C. GaAs MMIC devices are susceptible to damage TriQuint Semiconductor
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