NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: sm_0603 16 2 R7,R8 1k 1% sm_0603 17 1 R9 42.2k 1% sm_0603 Diode rectifier , footprint Description 2 C61,C62 15p sm_0805 2 1 C63 1u sm_0805 3 1 C64 10n sm_0805 4 1 C65 100n sm_0805 5 1 C66 1000u cpcyl1_d500_ls200_040 Capacitor AL-RILL 13x22/2M*1000my 25V 6 2 D7 Diode sm_d_1206 Diode planar 1N4148 1N4148 SOD323*75V 6 2 D8 Diode_zener sm_d_1206 Diode Zener ZMM SOD 80*5.1V (3.3V) G ... | Original |
26 pages, |
SM1812 1N4148 SOD-80 ST PC MOTHERBOARD CIRCUIT diagram w6 sm diode ac wattmeter circuit digital wattmeter circuit energy meter circuit diagram 3 phase 1N4148 SOD323 3 phase monitor AN3157 STEPPER MOTOR 10-wire SMD ZENER DIODE E1 AN3157 abstract |
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| Abstract: *iSiv High speed switching • 7U- '"MU KF*3i® Including Freewheeling Diode • Hêmm Insulated Type , ) Transistor 0.156 °C/W fé iJt Rth(j-c) Diode 0.5 °c/w m fé ÃŽJt Rth(c-f) With Thermal Compound 0.03 •c , ) Collector Output Characteristics 1000 *0 is !± VcE(sal) Vbe(sm) (V) I 30 50 100 300 500 ic (A) Base , *«jÅ" Forward Voltage of Free Wheeling Diode 7. -r 'V f- > B» M tstg t( M 0.2'. 0.1 0.05 0.03 , ) 0.1 C'C/W) 0.05 0.03 0.3 10* 10' 10* 10* ^ [W) t (msec) Transient Thermal Resistance (Diode ... | OCR Scan |
4 pages, |
M210 F151 2DI200M-050 w6 sm diode sil f553 DI200 datasheet abstract |
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| Abstract: Step 3) Connect W1 (BN) to the most negative point on the battery cell stack. Step 4) Connect W6 (BP , C = W9 D = W8 T = W7 PN = W 2 = = = = W5 W4 W6 W3 Safety Circuit Li Ion 3-cell , W8 T = W7 PN = W 2 3 = = = = W5 W4 W6 W3 www.powersmart.com PowerSmart PS3100 PS3100 , W5 W4 W6 W3 Safety Circuit Connection Diagrams: NiMH Any number of series NiMH cells may , W 11 W 10 U2 1N 2N BP 3N C = W9 D = W8 T = W7 PN = W 2 4 = = = = W5 W4 W6 ... | Original |
10 pages, |
capacitor 100nf 50v 0805 datasheet CCL-LX45GT "fuel gauge" OSCILLATOR 32.768K Data Sheet PS3100 w6 sm diode thermistor 10k ohm SML-LX1206GC SBS 15 battery PowerSmart SOT23GSD cmr200tb PS3100 abstract |
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| Abstract: Item RefDes Description Manufacturer Manufacturer's Part Number 36 W1 W2 W3 W4 W5 W6 , Manufacturer's Part Number 56 D2 D3 D4 1N5337B 1N5337B 4.7V 5W Zener Diode PTH ON Semiconductor 1N5337BG 1N5337BG 57 D1 D5 1N5341B 1N5341B 6.2V 5W Zener Diode PTH ON Semiconductor 1N5341BG 1N5341BG 58 U7 MC34064 MC34064 , N-Channel enhancement Mode FET Fairchild Semiconductor BSS138 BSS138 63 Y3 12.0MHz GSX49-4/351BF GSX49-4/351BF SM Crystal 12pF Golledge GSX49-4/351BF GSX49-4/351BF 12.0MHz 64 Y1 6.0MHz GSX-752A/351JF GSX-752A/351JF SM Crystal 30pF ... | Original |
26 pages, |
gsx49-4 2238 SOT363 KP-2012MGC microSMD035F-2 10k 1 Resistor SMD 0603 jumper 6061-EV1-REV1 Multicomp smd y2 SMD FET j11 smd 2312 schematic diagram usb to phono Transistor SMD SOT363 SC70 SC101 6061-EV1-REV1 abstract |
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| Abstract: ESJA23-04 ESJA23-04(3 â- 6kV) Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA23 ESJA23&, • ESJA23 ESJA23 is high reliability resin molded type high voltage silicon diode for distributor-less automobile ignition system which is sealed a multilayed mesa type silicon chip by epoxy resin. ' Features • Supersmall size • AMtt , * * Rá&g&s Säfss ü 1 +Ç tÃS^ ^ . i» D S X S -M D4-°ajîk D-HW ^^ ^Ãffs «v -M .N i e -> îà R sm^ -R , -H -H , m ÃŽS -X IZ1 tin â- ë Wi s â- H Vf z. â- y -fc i J •W6 g o ÃŽJ ss m % Ãœ Iii ^ « e G ^ ... | OCR Scan |
3 pages, |
ESJA23-04 diode A23 ESJA23 ESJA23-04 abstract |
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| Abstract: M36N2 D0603 ispPAC-POWR607 Power Manager device (U1). The input voltage is regulated down with a zener diode and a , diode and a transistor to regulate the 5V input. The ispPAC-POWR607 is the first device on the board to , AA14 D1 W5 D21 W17 A8 AA15 D2 Y6 D22 Y18 A9 AA16 D3 W6 D23 ... | Original |
36 pages, |
aa7 marking diode adc* rs232 EB29 LCM-S02002DSF LDS-A304RI pl30b sot23 marking code v7 PR15A diode transistor marking A9 R8 SOD123FL sot marking code w17 TRANSISTOR c104 transistor cf43 datasheet abstract |
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| Abstract: 68013a ispPAC-POWR607 Power Manager device (U1). The input voltage is regulated down with a zener diode and a , diode and a transistor to regulate the 5V input. The ispPAC-POWR607 is the first device on the board to , AA14 D1 W5 D21 W17 A8 AA15 D2 Y6 D22 Y18 A9 AA16 D3 W6 D23 ... | Original |
36 pages, |
POWR607 LDS-A304RI LCM-S02002DSF EB29 datasheet abstract |
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| Abstract: CR21-1001F-T 745C101472J orcad9 nREQ64 GND GND I/O Y6 nPBE7 I/O AA4 nPBE6 I/O AB4 nPCS1 I/O W6 ... | Original |
68 pages, |
CR21-330J-T BUF C145 A9000 74AHC1G14 7 Segment sm G17 amphenol JTAG header 10x2 footprint W17 sot23 m21 sot23 transistor MAX811 tsop 40 PIN SOCKET sot23-5 ldo a17 SOIC10 Amphenol 17SM09S 80200EVB 80200EVB abstract |
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| Abstract: TP21 TP22 TP23 TP24 TP25 TP4 TP5 TP6 SC1 SC2 SC3 SC4 SC5 SC6 W1 W2 W3 W4 W5 W6 R58 R60 R61 R1 R6 , Capacitor 10V X7R P-Channel MOSFET 60v, Rds(on) = 0.17R - SOT23 1N5337B 1N5337B 4.7V 5W Zener Diode PTH 1N5341B 1N5341B 6.2V 5W Zener Diode PTH DS1818 DS1818 3.3V active-low Power-On-Reset chip SOT DS1813 DS1813 5V active Low , Manufacturer Manufacturer's Part Number 58 Y1 6.0MHz GSX-752A/351JF GSX-752A/351JF SM Crystal 30pF Golledge ... | Original |
24 pages, |
SEMICONDUCTOR dallas diode zener c55 R62- Diode smd 33uf smd TRANSISTOR SMD mosfet TRANSISTOR SMD w2 smd transistor w1 schematic diagram usb to phono smd transistor p5 DIODE SMD 1206 philips make J291 microSMD035F-2 6100-EV1 6100-EV1-REV1 6100-EV1 abstract |
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| Abstract: efficiency (including the input diode bridge): 86% at 6A · Overall Board Size: 5.50" x 3.96" x 0.70" · , For the PoE input through either RJ45 connector, the diode bridge BR1 or BR2 is used to steer the , is the high potential pin. The diode DE1 provides the reverse protection of the AUX input. Please , identify the PD as a valid device because the AUX voltage will cause the current steering diode bridges , www.national.com 8 Factors Limiting the Minimum Operating Input Voltage AUX Input "OR-ing" Diode ... | Original |
18 pages, |
LM5072 OSRAM TRANSCEIVER re22 SI2301 application return loss measurement in PoE CC0603 resistor 220 ohm tdk capacitors C0805 cc2220 resistor 33 Ohm si2301 SOT23-3 Resistor 820 Ohm LTM673-R1S2-35 datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| 1 W 1.5 W 2 W 3 W 3.5 W 5 W 6 W 10 W Zener Voltage Regulator Diode Selector Guide Select a property below for a list of ) A SQ. MELF (SM) B (WT) (STD) B SQ. MELF (SM) C LEAD (STD) C STUD (STD) DDO-41 DDO-41 DDO-41 DDO-41 (STD) DIE (DIE) DO-13 DO-13 DO-13 DO-13 (STD) DO-213AA DO-213AA DO-213AA DO-213AA (SM) DO-213AB DO-213AB DO-213AB DO-213AB (SM) DO-214AA DO-214AA DO-214AA DO-214AA (SM) DO-214AC DO-214AC DO-214AC DO-214AC (SM) DO-215AA DO-215AA DO-215AA DO-215AA (SM) DO-34 DO-34 DO-34 DO-34 www.datasheetarchive.com/files/microsemi/products/zen/zen-v1.htm |
Microsemi | 07/12/1999 | 9.95 Kb | HTM | zen-v1.htm |
| OUT V CC VN750SM 55 m W 6 A 36 V SO-8 BLOCK DIAGRAM UNDERVOLTAGE OVERTEMPERATURE V HIGH SIDE DRIVER VN750SM Document Format Size Document Number Date Update Pages M [ October 2000 1/11 VN750SM HIGH SIDE DRIVER PRELIMINARY DATA 1 n CMOS COMPATIBLE n REVERSE BATTERY PROTECTION (*) DESCRIPTION The VN750SM is a monolithic device designed in DETECTION DETECTION DETECTION DETECTION (*) See application schematic at page 8 2/11 VN750SM www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7368.htm |
STMicroelectronics | 06/11/2000 | 14.46 Kb | HTM | 7368.htm |
| EQJ4 VALUE { ), +( >} C_Cds4 s dEQJ4 {w6} E_Egs g sm VALUE {(0.5*(V =1 .PARAM w6={85p*act} w7={60p*act} sl={2p*act} .PARAM Cgs={90p*act} Cox={w0+w1+w2} .PARAM k14 (Tjx)+exp(min(log(Is(Tjx)+Usd/(Un*Tjx),23)} .FUNC QCds(x,z) { )} G_G1 d s VALUE={Iges(V *control parameter: 1 if diode should store charge, 0 otherwise .PARAM enable_diode=1 .PARAM w0 www.datasheetarchive.com/files/spicemodels/misc/infineon_coolmos_800.lib |
Spice Models | 22/06/2007 | 58.92 Kb | LIB | infineon_coolmos_800.lib |
| conditions: 200V: 0.325A; 80V: 600 W ; + 15V: 94 W ; 6.3V: 8 W Table 5. Full load (P O = 5.5W) V AC [V] 88 110 160 220 264 Pin [W] 6.9 7 7 7.1 7.2 Load conditions: 200V: open; 80V: open; + 15V: 0.5W; 6.3V: 8 W Table 7. Consumption from the mains in OFF mode (P .3 1.4 1.5 Load conditions: 200V: open; 80V: open; +15V: 0.5W; 6.3V: open (*) With the active conditions: 200V: 0.6A; other outputs loads: 80V: 600 W ; + 15V: 94 W ; 6.3V: 8 W AN1133 AN1133 AN1133 AN1133 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6515-v3.htm |
STMicroelectronics | 25/05/2000 | 23.5 Kb | HTM | 6515-v3.htm |
| ; + 15V: 94 W ; 6.3V: 8 W Table 5. Full load measurements (f synch = 82kHz) V AC [V] 88 110 160 V: 600 W ; + 15V: 94 W ; 6.3V: 8 W AN1133 AN1133 AN1133 AN1133 APPLICATION NOTE 6/11 Table 6. Consumption from the mains in Suspend mode (P O = 5.5W) V AC [V] 88 110 160 220 264 Pin [W] 6.9 7 7 7.1 7.2 Load conditions: 200V: open; 80V: open; + 15V: 0.5W; 6.3V: 8 W Table 7. Consumption from the ] (*) 1.2 1.2 1.3 1.4 1.5 Load conditions: 200V: open; 80V: open; +15V: 0.5W; 6.3V: open (*) With the www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6515.htm |
STMicroelectronics | 20/10/2000 | 24.52 Kb | HTM | 6515.htm |
| conditions: 200V: 630 W ; 80V: 600 W ; + 15V: 80 W ; 6.3V: 8 W Table 5. Consumption from the mains in Suspend mode (P O = 5.5W) V AC [V] 88 110 160 220 264 Pin [W] 6.9 7 7 7.1 7.2 Load conditions: 200V: open; 80V: open; + 15V: 0.5W; 6.3V: 8 W Table 6. Consumption .5 1.6 1.8 Pin [W] (*) 1.2 1.2 1.3 1.4 1.5 Load conditions: 200V: open; 80V: open; +15V: 0.5W; 6 16 11 12 10 200V 65W 80V 10W 6.3V 5W +15V 5W -15V 5W GND 17 R13 47K www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6514-v3.htm |
STMicroelectronics | 21/09/2000 | 22.43 Kb | HTM | 6514-v3.htm |
| ; 80V: 600 W ; + 15V: 80 W ; 6.3V: 8 W Table 5. Consumption from the mains in Suspend mode (P O = 5.5W) V AC [V] 88 110 160 220 264 Pin [W] 6.9 7 7 7.1 7.2 Load conditions: 200V: open; 80V: open; + 15V: 0.5W; 6.3V: 8 W Table 6. Consumption from the mains in OFF mode (P O .5 Load conditions: 200V: open; 80V: open; +15V: 0.5W; 6.3V: open (*) With the active start-up circuit 1k R09 22 R12 330K 1 4 8 7 18 15 13 14 16 11 12 10 200V 65W 80V 10W 6.3V 5W www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6514.htm |
STMicroelectronics | 20/10/2000 | 23.45 Kb | HTM | 6514.htm |
| , I p p = 75 A 1 kV / ms, I p p = 10 A U U 1 0 mF 2 W 4 5 W 6 6 W 4 7 0 W 8 3 W of the IC. The diode array DA108S1 DA108S1 DA108S1 DA108S1 connected between +Vcc and GND is then used to limit the . TX LINE SMP75-8 SMP75-8 SMP75-8 SMP75-8 5 V 0 V SM6T6V8A RX LINE SMP75-8 SMP75-8 SMP75-8 SMP75-8 RTIP RRING TTIP TRING +Vcc www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5015-v3.htm |
STMicroelectronics | 25/05/2000 | 10.5 Kb | HTM | 5015-v3.htm |