NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| TSW4100EVM | Texas Instruments | TSW4100 Wideband Digital Repeater Demonstration Kit | 
|
|
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SAW Filters TMX W410 SAW Bandpass Filter DVB T Application Specification (Rev-1 , .P03 Package TMX W410 , cost. TMX W410 SAW Bandpass Filter DVB-T April 18th, 2005 Preliminary Specification (Rev 1 , specifications and informations at any time when necessary to provide optimum performance and cost. TMX W410 , performance and cost. TMX W410 SAW Bandpass Filter DVB-T April 18th, 2005 Preliminary ... | Original |
5 pages, |
DVB-T datasheet abstract |
|
|||
| Abstract: C 32.50 30.00 30.90 0.85±0.05 (PLATED HOLE) 0.1 M X Z S B C -W4.10 25.00 ... | Original |
3 pages, |
U77-1163-2010P datasheet abstract |
|
|||
| Abstract: transformer transformer output Dimensions (mm) _ W410, H100, D320 transformer Antenna ... | Original |
2 pages, |
microphone using amplifier Transformer isolated amplifier C12491 C12491 abstract |
|
|||
| Abstract: HOLE) 0.1 M X Z S B C -W4.10 25.00 27.50 1.55±0.05 0.1 L X Z S -V- 1.55±0.05 ... | Original |
4 pages, |
U77-1163-2010P datasheet abstract |
|
|||
| Abstract: c21134 W851 w112r 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 CC78K0S CC78K0S CVer.1.50 78K0S 78K0S U16654JJ1V0UM001 U16654JJ1V0UM001 March 2003 NSCP(K) © NEC ... | Original |
210 pages, |
SM78K0S A905 W505 w745 w849 K 157 YP1 C9024 f739 pc W039 stk 0177 knc 201 39 f827 C9014 KNC 201 11 KNC 201 datasheet abstract |
|
|||
| Abstract: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation ... | Original |
211 pages, |
a006 CC78K0S F606 f799 fn521 ID78K0S-NS MARK A106 RA78K0S RA78KOS w745 W505 w503 SM78K0S transistor c9014 stk 0177 datasheet abstract |
|
|||
| Abstract: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation ... | Original |
312 pages, |
f425 fn521 W302 CC78K0S PC-9800 SM78K0S a006 RA78K0S C9024 datasheet abstract |
|
|||
| Abstract: W744 SE112 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 CC78K4Ver. 2.40 C 78K4 U16707JJ1V0UM001 U16707JJ1V0UM001 June 2003 NSCP(K) © NEC El ... | Original |
240 pages, |
CC78K4 f799 K 157 YP1 RA78K4 SM78K a006 tc 18cs -s4 W505 U15255J U16707JJ1V0UM stk 0177 EWSD KNC 201 08 f827 c4038 datasheet abstract |
|
|||
| Abstract: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation ... | Original |
211 pages, |
a006 c9014 transistor C9014 transistor datasheet CC78K0S data sheet transistor c9014 f799 ID78K0S-NS RA78K0S SM78K0S W505 transistor c9014 stk 0177 F312 datasheet abstract |
|
|||
| Abstract: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation ... | Original |
244 pages, |
ZF Microsystems embedded pc c4038 transistor CC78K4 f799 RA78K4 SM78K4 W505 W824 a006 stk 0177 c4038 datasheet abstract |
|
|||
| Abstract: Table 4-2. MPC823 MPC823 (UDR & CDR) Power Consumption F98S UDR2 (.42 m) EQUATION POWER @ 50MHZ 50MHZ F98S UDR2 (.42 m) H89G CDR2 (.36 m) EQUATION POWER @ 25MHZ 25MHZ H89G CDR2 (.36 m) POWER @ 50MHZ 50MHZ H89G CDR2 (.36 m) POWER @ 66MHZ 66MHZ H89G CDR2 (.36 m) Normal High LPM=00 TEXPS=1 @20 mW + Fs/50 * (.78)/2DFNH W 800 mW @20 mW + Fs/50 * (.555)/2DFNH W 298 mW 575 mW 752 mW Normal Low LPM=00 TEXPS=1 @20 mW + Fs/50 * (.78)/2(DFNL+1) W 410 mW @20 mW + Fs/50 ... | Original |
1 pages, |
MPC823 F98S 50MHZ W131 transistor mw 131 MPC823 abstract |
|
|||
| Abstract: SB01W05C SB01W05C No. N 2 9 9 5 B No.N2995A N2995A SB01W05C SB01W05C () 50V, 100mA , , (VF max=0.55V) (trr max=10ns) Absolute Maximum Ratings / Ta=25 (1 ) VRRM VRSM IO IFSM 50Hz 1 Tj Tstg 50 55 100 2 - 55 125 - 55 125 unit V V mA A Electrical Characteristics / Ta=25 (1 ) VR VF IR C trr Rth(j-a)1 Rth(j-a)2 IR=50A IF=100mA VR=25V VR=10V, f=1MHz IF=IR=10mA, min 50 typ max unit 560 ... | Original |
3 pages, |
SB01W05C D228 D2000 N2995A SB01W05C abstract |
|
|||
| Abstract: IGBT 400 A 600 V CIRCUIT PDMB400A6 PDMB400A6 OUTLINE DRAWING Dimensionmm G2 E2 C2E1 C1 E2 E1 G1 Maximum RatingsTC25 Symbol Rated Value Unit VCES 600 V VGES � V DC IC 400 1ms ICP 800 PC 1470 W Tj -40150 Tstg -40125 Viso 2500 V RMS Ftor 330.6 N m kgf cm Item Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Power Dissipation Jun ... | Original |
4 pages, |
PDMB400A6 datasheet abstract |
|
|||
| Abstract: Green Power GPS - Green Power Semiconductors SPA Factory: Via Ungaretti 10, 16157 Genova, Italy Phone: +39-010-667 8800 Fax: +39-010-667 8812 Web: www.gpsemi.it E-mail: info@gpsemi.it Semiconductors GOG9xx08C THREE PHASE AC-DC BRIDGE Fuse protection Temperature sensors Snubber for SCR's protections Compact design Cooling fans included LINE VOLTAGE UP TO 500V DC OUTPUT CURRENT 800A GOG94008C GOG94008C GOG95008C GOG95008C 400 Line to line voltage Characteristic Conditions 500 ... | Original |
2 pages, |
scr 220v GOG95008C GOG94008C 220v ac fan micro thermal fuse datasheet abstract |
|
|||
| Abstract: Ordering number :EN1916A EN1916A SB01-05CP SB01-05CP Shottky Barrier Diode 50V, 100mA Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1148 [SB01-05CP SB01-05CP] Features · Low forward voltage (VF max=0.55V). · Fast reverse recorvery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. C:Cathode A:Anode SANYO:CP Specifications Absolute ... | Original |
2 pages, |
SB01-05CP EN1916A EN1916A abstract |
|
|||
| Abstract: Ordering number :EN1921A EN1921A SB005-09CP SB005-09CP Shottky Barrier Diode 90V, 50mA Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters and choppers). unit:mm 1148 [SB005-09CP SB005-09CP] Features · Low forward voltage (VF max=0.7V). · Fast reverse recovery time (trr=10ns max). · Low switching noise. · Low leakage current and high reliability due to highly reliable planner structure. C:Cathode A:Anode SANYO:CP Specifications Absolu ... | Original |
2 pages, |
SB005-09CP EN1921A EN1921A abstract |
|
|||
| Abstract: Ordering number :EN2995A EN2995A SB01W05C SB01W05C Shottky Barrier Diode (Twin Type · Cathode Common) 50V, 100mA Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1169A [SB01W05C SB01W05C] Features · Low forward voltage (VF max=0.55V). · Fast reverse recorvery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. 1:Anode 2:No connection 3:C ... | Original |
2 pages, |
SB01W05C en2995 EN2995A EN2995A abstract |
|
|||
| Abstract: BAV19W BAV19W thru BAV21W BAV21W Vishay Semiconductors formerly General Semiconductor Small-Signal Diodes SOD-123 .022 (0.55) .112 (2.85) .100 (2.55) .152 (3.85) .140 (3.55) Cathode Band Top View Mounting Pad Layout Features 0.055 (1.40) 0.055 (1.40) .006 (0.15) max. .053 (1.35) max. .067 (1.70) .055 (1.40) .004 (0.1) max. 0.094 (2.40) Dimensions in inches and (millimeters) .010 (0.25) min. · Silicon Epitaxial Planar Diodes · For general purpose · The ... | Original |
3 pages, |
diode MARKING A9 BAS19 BAV100 BAV103 BAV19 BAV19W BAV20W BAV21 BAV21W 100v 250 ma SOD-323 vishay A9 SOT-23 BAV19W abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| # GHz S MA R 50 ! 17 Sep 1992 / 12:51:31 !BFR182W BFR182W BFR182W BFR182W, Si-NPN RF-Transistor in SOT323 [w410Vm75] ! VCE= 10.00V, IC= .75mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .100 .97516 -10.3 2.5821 172.0 .02150 82.9 .99191 -3.9 .150 .96884 -15.6 2.5697 167.8 .03227 80.1 .98990 -5.8 .200 .96327 -20.5 2.5591 163.9 .04251 77.6 .98327 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr182w/w410vm75.s2p |
Siemens | 17/09/1992 | 2.37 Kb | S2P | w410vm75.s2p |
| # GHz S MA R 50 ! 17 Sep 1992 / 12:52:10 !BFR182W BFR182W BFR182W BFR182W, Si-NPN RF-Transistor in SOT323 [w410V1m0] ! VCE= 10.00V, IC= 1.00mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .100 .96716 -11.4 3.4025 171.3 .02141 82.6 .99003 -4.4 .150 .95771 -17.1 3.3766 166.7 .03226 79.6 .98642 -6.6 .200 .94900 -22.5 3.3537 162.5 .04204 76.6 .97789 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr182w/w410v1m0.s2p |
Siemens | 17/09/1992 | 2.37 Kb | S2P | w410v1m0.s2p |
| # GHz S MA R 50 ! 17 Sep 1992 / 12:52:47 !BFR182W BFR182W BFR182W BFR182W, Si-NPN RF-Transistor in SOT323 [w410V2m0] ! VCE= 10.00V, IC= 2.00mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .100 .92994 -15.1 6.4716 168.4 .02102 80.7 .98229 -6.4 .150 .91306 -22.6 6.3828 162.6 .03096 76.9 .97012 -9.5 .200 .89467 -29.7 6.2596 157.2 .04031 73.3 .95238 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr182w/w410v2m0.s2p |
Siemens | 17/09/1992 | 2.37 Kb | S2P | w410v2m0.s2p |
| # GHz S MA R 50 ! 17 Sep 1992 / 12:55:24 !BFR182W BFR182W BFR182W BFR182W, Si-NPN RF-Transistor in SOT323 [w410V15m] ! VCE= 10.00V, IC= 15.00mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .100 .61214 -42.6 27.1446 148.7 .01652 71.0 .85665 -19.7 .150 .54613 -59.6 23.7554 137.1 .02242 66.7 .76907 -25.7 .200 .48935 -73.6 20.6815 128.1 .02684 64.6 .68963 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr182w/w410v15m.s2p |
Siemens | 17/09/1992 | 2.37 Kb | S2P | w410v15m.s2p |
| # GHz S MA R 50 ! 17 Sep 1992 / 12:53:23 !BFR182W BFR182W BFR182W BFR182W, Si-NPN RF-Transistor in SOT323 [w410V5m0] ! VCE= 10.00V, IC= 5.00mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .100 .83006 -24.2 13.9426 161.5 .01970 76.4 .95035 -11.3 .150 .79138 -35.4 13.2826 152.9 .02816 71.9 .91365 -16.1 .200 .75088 -45.5 12.5377 145.3 .03543 67.4 .86884 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr182w/w410v5m0.s2p |
Siemens | 17/09/1992 | 2.37 Kb | S2P | w410v5m0.s2p |
| # GHz S MA R 50 ! 17 Sep 1992 / 12:54:01 !BFR182W BFR182W BFR182W BFR182W, Si-NPN RF-Transistor in SOT323 [w410V7m0] ! VCE= 10.00V, IC= 7.00mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .100 .77362 -28.8 17.7328 158.0 .01872 75.2 .92963 -13.7 .150 .72400 -41.8 16.5601 148.2 .02656 70.0 .87740 -19.2 .200 .67336 -53.4 15.2722 140.0 .03272 65.9 .81977 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr182w/w410v7m0.s2p |
Siemens | 17/09/1992 | 2.37 Kb | S2P | w410v7m0.s2p |
| # GHz S MA R 50 ! 17 Sep 1992 / 12:56:00 !BFR182W BFR182W BFR182W BFR182W, Si-NPN RF-Transistor in SOT323 [w410V20m] ! VCE= 10.00V, IC= 20.00mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .100 .55107 -48.7 30.2845 145.2 .01560 70.2 .82152 -21.7 .150 .48503 -67.2 25.8375 133.2 .02104 66.3 .72432 -27.5 .200 .43064 -82.1 22.0388 124.3 .02496 64.6 .64214 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr182w/w410v20m.s2p |
Siemens | 17/09/1992 | 2.37 Kb | S2P | w410v20m.s2p |
| # GHz S MA R 50 ! 17 Sep 1992 / 12:54:46 !BFR182W BFR182W BFR182W BFR182W, Si-NPN RF-Transistor in SOT323 [w410V10m] ! VCE= 10.00V, IC= 10.00mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .100 .70234 -34.6 22.0837 153.8 .01782 73.0 .89962 -16.5 .150 .64209 -49.6 20.0514 143.1 .02462 68.6 .83082 -22.4 .200 .58520 -62.4 18.0159 134.2 .02989 64.4 .76067 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr182w/w410v10m.s2p |
Siemens | 17/09/1992 | 2.37 Kb | S2P | w410v10m.s2p |
| # GHz S MA R 50 ! 17 Sep 1992 / 12:50:53 !BFR182W BFR182W BFR182W BFR182W, Si-NPN RF-Transistor in SOT323 [w410Vm50] ! VCE= 10.00V, IC= .50mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .100 .98379 -9.2 1.7342 172.7 .02151 83.7 .99430 -3.3 .150 .97966 -13.9 1.7302 168.8 .03251 81.5 .99299 -5.0 .200 .97511 -18.3 1.7250 165.2 .04292 78.7 .98844 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr182w/w410vm50.s2p |
Siemens | 17/09/1992 | 2.37 Kb | S2P | w410vm50.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFR182W BFR182W BFR182W BFR182W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 10 V IC = 1 mA ! Common Emitter S-Parameters: September 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.9672 -11.4 3.403 171.3 0.0214 82.6 0.9900 -4.4 0.150 0.9577 -17.1 3.377 166.7 0.0323 79.6 0.9864 -6.6 0.200 0.9490 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr182w/w410v1m0-v1.s2p |
Siemens | 09/08/1994 | 2.22 Kb | S2P | w410v1m0-v1.s2p |
| NTE Electronics Part | Industry Part |