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w13 smd transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Look Emitter - SMD Photo Diode - DIP Photo Diode - Side Look Photo Diode - SMD Photo Transistor - DIP Photo Transistor - Side Look Photo Transistor - SMD Darlington Transistor - DIP-DC High Speed Transistor - DIP-AC Transistor - DIP-DC Transistor - SOP-AC Transistor - SOP-DC Transistor - SSOP-AC Transistor - SSOP-DC Triac Schmitt Trigger High Data Rate Short Burst - DIP-Vo-GND-Vcc High Data Rate , LEDs, LAMPs, SMD LEDs, Lighting Modules, Digital Displays, Optocouplers and Infrared components EVERLIGHT
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HIR26-21C w32 smd transistor 17-21SYGC/S530-E2/TR8 w32 smd transistor 143 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB CT1003Q43-V2
Abstract: company symbol SOT23 (Transistor) XYZ 32 T9 XYZ type code (2or 3 places) 2 weekly , Transistors and Diodes in SMD Plastic packages Remarks: 1) _means: First digit of three is empty (open) 2 , BFP93AW W0F TSDF1205RW WMO BF998RW W13 S913TRW WP2 BFR92AW W18 BFP181TW Vishay Intertechnology
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SMD Transistors w04 smd transistor w18 w2f smd transistor w18 smd transistor smd transistor w04 SMD Transistor W03 BFP280T R92AR S913T BFP92A S593TR S949T
Abstract: 1 Q8 STGW35NB60SD TO-247 1 Q13 BC807-25 SMD PNP transistor 45 V / 0,5 A, SOT23 , basic configurations. The configuration jumpers W11, W12, W13, and W14 allow to set the common op amp , Present W13 Present W13 Present W14 Present W14 Present Setting of gain , configuration Single-shunt configuration W11 Not present W12 Not present W13 Not present , present W11 Not present W12 Not present W13 Not present W14 Not present Present STMicroelectronics
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UM1036 STEVAL-IHM028V1 STGIPS20K60 1N4148 diode SMD VIPER26 viper26ld resistor net b 103g w14 smd transistor IHM028V1
Abstract: control (continued) Jumper W13 Settings for any HV motor in six-step control Single-shunt Present , sensor or encoder W9 Single-shunt W10 Not present W11 Not marked position W13 , sensor or encoder W9 Single-shunt W10 Present W11 Dash mark position W13 , Single-shunt W10 Present W11 Dash mark position W13 Single-shunt W14 Not present W16 , encoder W9 Three-shunt W10 Present W11 Silk screen marked position W13 Three-shunt STMicroelectronics
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transistor smd w16 UM0723 L6390 STGP10NC60KD
Abstract: Not installed REFERENCE VOLTAGE OPTIONS MODULATOR CLOCK W13 3.1 Analog Input Both the , CONDITION REFERENCE DESIGNATOR W13 4 DESCRIPTION Modulator clock source 1­2 2­3 , /16W 5% 0402 SMD Pansonic ERJ-2GE0R00X 2 1 2.2R R43 Resistor 2.2 1/4W 5% 1206 Pansonic ERJ-8GEYJ2R2V 3 4 33R R36 R52 R53 R54 Resistor 33 1/8W 5% 0805 SMD Pansonic ERJ-6GEYJ330V 4 3 49.9R R30 R31 R46 Resistor 49.9 1/16W 1% 0603 SMD Pansonic ERJ Texas Instruments
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smd transistor w16 W16 SMD transistor SMD W16 Transistor VF900537-40 vf900 TMS320C6713 DSK kit circuit diagram SLAU147 ADS1601/02 ADS1601/ADS1602EVM
Abstract: C58 C59 R90 R89 10 pF 47 k 3.3 k 10 pF !SD R102 NC W13 3_shunt Q11 STGP10NC60KD , W13 24/46 Present for 3.3 V supplied MCU Not present Not present Doc ID 15870 Rev 1 , Not present W10 Not present W11 "B" position W12 Present W13 4.2 Present , W11 "A" position "A" position W12 Not present Not present W13 26/46 Present , Present W11 "A" position W12 Not present W13 Present Doc ID 15870 Rev 1 27/46 STMicroelectronics
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wurth max inverter 160 viper16l VIPer16 applications st l78l33 VIPER16ld w12 smd transistor
Abstract: C58 C59 R90 R89 10 pF 47 k 3.3 k 10 pF !SD R102 NC W13 3_shunt Q11 STGP10NC60KD , W13 24/46 Present for 3.3 V supplied MCU Not present Not present Doc ID 15870 Rev 2 , Not present W10 Not present W11 "B" position W12 Present W13 4.2 Present , W11 "A" position "A" position W12 Not present Not present W13 26/46 Present , Present W11 "A" position W12 Not present W13 Present Doc ID 15870 Rev 2 27/46 STMicroelectronics
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1N4148 SMD PACKAGE vishay 0805 SMD resistors SCHEMATIC POWER SUPPLY WITH IGBTS NTC-10 L6386 schematic 3 phase inverter schematic diagram
Abstract: modulation at gain reduction â'¢ High AGC-range â'¢ SMD package 1 2 _Q | I IT 13 654 4 3 S913TRW Marking: W13 Plastic case (SOT 343R) 1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1 Absolute Maximum , feasible. Using open collector switching transistor (inside of PLL), insert 10 kfì collector resistor. 2 -
OCR Scan
smd transistor TO4 telefunken ha 750 m w13 SMD sot 23 smd transistor TO4 13 SMD TRANSISTOR MARKING 259 smd transistor 712 800MH
Abstract: Improved cross modulation at gain reduction High AGC-range SMD package n d - u 13 654 4 3 S913TRW Marking: W13 Plastic case (SOT 343R) 1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1 , switching transistor (inside of PLL), insert 10 kQ collector resistor. TELEFUNKEN Semiconductors Rev. Al, 04 -
OCR Scan
marking w13 smd w13 transistor w13 smd tuner SMD 642 ic smd transistor marking 2S 88/540/EEC 91/690/EEC D-74025
Abstract: High AGC-range High gain D SMD package Biasing network on chip 1 2 13 566 13 654 4 3 S913TRW Marking: W13 Plastic case (SOT 343R) 1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate , with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert 10 kW Temic Semiconductors
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731 smd
Abstract: Q1 NPN TRANSISTOR W13 TP9 W11 VoutS1B VoutB VoutS2B W7 VoutS1A VoutS1C VoutC , W1 W12 W13 W20 VC C GN D VSS GN D VD D ±5VA +3.3VD (J1) (J3) VSS RST RSTSEL , 470pF, 50V, 1206 Multilayer Ceramic Capacitor SMD 0 Ohm, 1/4W 1206 Chip Resistor 124 Ohms, 1%, 1/8W , Ohms, 1/4W 1206 Chip Resistor FET Transistor NPN 35VCEO 50MA MINI-3P 4 Position Jumper_ .1" , spacing 15 W1 W2 W3 W4 W5 W10 W11 W12 W13 W20 W21 W23 W25 W26 W27 Molex 22-03-2031 3 Texas Instruments
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DAC7654 w21 transistor smd transistor SMD w26 smd transistor w25 SMD Transistors w27 npn transistor w27 smd transistor w21 SLAU130
Abstract: fixed threshold voltage (set by the R52-R49 voltage divider). When this threshold is passed, transistor , A position W6 Not present Present W12 B position A position W13 B position , W12 B position for single-shunt B position for single-shunt W13 B position for , for three-shunt W13 A position for three-shunt A position for three-shunt W14 User , W8 W9 W10 W11 W12 W13 W14 30/57 Doc ID 17665 Rev 1 UM0969 Table 6 STMicroelectronics
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STGIPS10K60A TSV944 RC06 series ntc 10 epcos W12 hall sensor stm32 foc 25L-SDIP STEVAL-IHM027V1
Abstract: (set by the R52-R49 voltage divider). When this threshold is passed, transistor Q1 is switched on , three-shunt configuration Gain setting Jumper Single-shunt W2 W4 W6 W12 W13 Not present B position Not , W3 W4 W5 W6 W7 W8 W9 W10 W11 W12 W13 W14 Present Not present Present B position for single-shunt B , VDC to 350 VDC. Table 4. Jumper HV PMSM motor W1 W2 W3 W4 W5 W6 W7 W8 W9 W10 W11 W12 W13 W14 W15 W16 , present Present W10 Not present Present W11 Not present A position W12 B position A position W13 B STMicroelectronics
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Transistor hall w12 manual STM32 touch sensing GIPS10K60 stm32 encoder diode 1N4148 SMD PACKAGE DIMENSION DIODE SMD 10 25L
Abstract: AGC-range D SMD package Integrated gate protection diodes Low noise figure High gain Biasing network , 566 3 S913TRW Marking: W13 Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate , collector switching transistor (inside of PLL), insert 10 k W collector resistor. www.vishay.com 2 (9 Vishay Semiconductors
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S913TR S913 S913T/S913TR/S913TRW
Abstract: chip Improved cross modulation at gain reduction High AGC-range SMD package 4 1 3 2 SOT , : W13 Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Document Number 85059 Rev. 1.4, 26 , switching transistor (inside of PLL), insert 10 k collector resistor. Electrical AC Characteristics Tamb Vishay Semiconductors
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marking 557 SOT143 smd transistor marking j5 557 sot-143 MARKING SOT-143 MARKING 557 transistor rf cm 1104 S913R
Abstract: cross modulation at gain reduction High AGC-range SMD package Lead (Pb)-free component Component in , : approx. 6.0 mg Marking: W13 Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 C block AGC RF in C , transistor (inside of PLL), insert 10 k collector resistor. Electrical AC Characteristics Tamb = 25 °C Vishay Semiconductors
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2002/95/EC 2002/96/EC
Abstract: modulation at gain reduction D High AGC-range D SMD package 2 1 1 2 94 9279 13 579 94 , Gate 2, 4 = Gate 1 1 2 13 654 13 566 4 3 S913TRW Marking: W13 Plastic case (SOT , switching transistor (inside of PLL), insert 10 k W collector resistor. www.vishay.com 2 (9 Vishay Telefunken
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Abstract: network on chip Improved cross modulation at gain reduction High AGC-range SMD package Lead (Pb)-free , 1 Typ: S913TRW Case: SOT-343R Plastic case Weight: approx. 6.0 mg Marking: W13 Pinning: 1 = , open collector switching transistor (inside of PLL), insert 10 k collector resistor. Electrical AC Vishay Semiconductors
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TRANSISTOR SMD 613
Abstract: Features D D D D D Improved cross modulation at gain reduction D High AGC-range D SMD package , Marking: W13 Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Document Number , transistor (inside of PLL), insert 10 kW collector resistor. www.vishay.de · FaxBack +1-408-970-5600 2 (9 Vishay Telefunken
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Abstract: Features D D D D D Improved cross modulation at gain reduction D High AGC-range D SMD package , Marking: W13 Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Document Number , 1 with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert Vishay Telefunken
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SOT343R w13 SMD
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