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vqb 71

Catalog Datasheet MFG & Type PDF Document Tags

D147D

Abstract: C520D " Anzeigen ein. Das Verdrahten der 3 VQB 71 aus der eigentlich schon etwas veralteten Applikationsschaltung bereitet noch einige Mühe, bzw. die entsprechende Verknüpfung von 3 VQB 37 (für Kleingeräte) wird schon zum , ~ stabilisierte Spannung nicht steigen sollte. Betrachtet man nun die veraltete VQB 71 mit ihrer Serienschaltung , . 6.2. 6.2.1. 6.2.2. 6.2.3. 7. 7.1. 7.2. 7.3. 7.4. Einleitung , . 14 14 17 20 22 23 27 27 37 39 45 55 55 61 62 66 67 71 71 78 79 85 3 8. 8.1. 8.2. 8.3. 8.4. 8.5
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VQB71

Abstract: Halbleiterbauelemente DDR 106 D U 107 D U 108 D U 3^1 D U 352 D VQ 13> VQA 11 VQA 11/A VQA 12 VQB 71 VQB 71/A VQB 73 VQU 32 VQC , SAZ 61 SAZ 71 SC 206 SC 207 SC 236 sc 237 SC 238 sc 239 SF 121 SF 122 SF 123 SF 126 SF 127 SF 128 SF , SAZ 54 SAZ 61 SAZ 71 c» 1 ,5 1 100 10 10 G e -G le ic h r ic h te r d io d e n re^rv.aH/ebt e
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Diode KD 514

Abstract: B30C250 BAY 38 BAY 42 BAY 45 # BAY 46 BAY 67 BAY 71 BAY 72 BAY 74 BAY 82 BAY 93 BAY 94 BAY 95 BB 64x005 BB 104 , B, SAY 17 B BYX38/600 R s BYX39^00 R s BYX42/100 T BYX 55/600 BYX 71/350 BYX 20 -BYY 21 BYY 34 , pN Wichtigster Ersa t z t yp KY 725 F KYX28/10 KYX28/18 KYZ 71 KYZ 76 KZ 106G KZ 260/5V KZ260 , 715 KZ 721 KZ 751 KZZ 71 KZZ 72 KZZ 73 KZZ 74 KZZ 75 KZZ 76 LD 41/2 MA 23 HA 26 MBR 1530 MBR 1535 MCT , BYX 71/350 i) s D 247 s SY 360/14 c UV 1648 SZX 21/5,6 z SZ 600/6,8 z SZX21/8.2 z SZ 600/12 z z SZ 600
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Diode KD 514 B30C250 GD507A DIODE OA-172 kyx 28 SY360

vqb 71

Abstract: 074I Is = 10nA 20 25 10 15 15 V Vqo " Vbd - " 5 V Iq - 10nA, Vqb = 0 22.5 V Source Open' Is = 10/t A, Vqb , - 15V VDs = 20V VSD=10V Vgo = = 15V VSO = 20V Vqb = 25V i* A 1.0 1.0 0.1 1.0 50 30 23 19 5.0 10 35 , 9.149-1.9*7) *.Q4|-( H5T5ÏÏ 1 _ 14*71 m l* r * II 6241 .0231.6*4) .1 * 0 14 0*4» mi (*. , ) 0J3) (O .ifi) 0.007 fo a a 0.033 0.028 (0.83) (0,71) I J I.045 '.033 0.018 0.015 (0.45
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vqb 71 074I sem 304 SD50G1 SD5000CHP SD5000J SD500QN SD5000 SD5001 SD5002

vqb 71

Abstract: Current (Vqb = 20 Vdc, Ie = 0} Emitter Cutoff Current iVEB(off) = 3,0 Vdc' lc = 0t ON CHARACTERISTICS DC , _ _ b3b 72S M 2 -3 2 2 D103b23 71^ Motorola Small-Signal Transistors, FETs and Diodes
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MRF5711LT1

Abstract: MRF571 ) Emitter-Base Breakdown Voltage (lg = 50 jiAdc, Iq = 0) Collector Cutoff Current (Vqb = 8.0 Vdc, lg = 0) ON , (Vqb = 10 Vdc, IE = 0, f = 1.0 MHz) (Vqb = 6.0 Vdc, Ie = 0, f = 1 .0 MHz) Current Gain-Bandwidth , 60 66 67 64 59 68 72 70 65 60 73 75 71 66 60 IS22I 0.61 0.35 0.26 0.24 0.22 0.35 0.17 0.14 0.11 0.10 0.26 0.14 0.12 0.11 0.10 0.21 0.13 0.12 0.10 0.09 z«> -4 5 -6 0 -71 -7 7 -8 6 -7 3 -9 4 -111 -118 -131 , 15.14 6.38 3.35 2.32 1.84 ¿ 126 93 72 57 45 108 86 72 58 48 102 84 71 59 48 98 83 70 58 48
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MRF5711LT1 MRF571 MPS571 MBR571 LG 631 IC E4E SOT23 A/500 MMBR571LT1 VK-200

TL 431 SO8

Abstract: 2SD203 ABSOLUTE M AXIM UM RATINGS PARAMETER Breakdown Voltages Vog Vqq VQS Vqb Vqd SD200 SD201 SD202 (Ta = + , f= 1 G H z Id = 20mA V$ b = 0 pF 2.0 50 nA / , ) 0069 0.053 0.007 fo a a 0.033 0.028 (0.83) (0,71) I I.045 '.033 (iii.4 ) 0.018 (0.85) 0.015
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SD203DC TL 431 SO8 2SD203 P3NF SD203 SD202DC SD200DC SD200DC/R SD201DC/R
Abstract: BUZ 355 Electrical Characteristics, at 71 = 25°C, unless otherwise specified Parameter Symbol , , UDS = 25 V, f = 1 MHz Turn-on delay time PF °ISS VQB = o v, VDS = 25 v, f- 1 MHz Reverse New Jersey Semiconductor
Original

1k ohm resistor

Abstract: MK4116 (Vqb)- The functional circuitry for the clock inputs (RA5, CAS, WRITE) looks like: _ â'"WT TD PAD «CD , Xâ'"71 In general, extreme care must be exercised when making measurements on the DoUT that both the
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MK4116 1k ohm resistor mostek 4116 mos inverter

Q62702-C2597

Abstract: SCT-595 SIEMENS BCP 71M NPN Silicon AF Power Transistor Preliminary data â'¢ Drain switch for RF power amplifier stages â'¢ For AF driver and output stages â'¢ High collector current â'¢ Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package BCP 71 M PCs Q62702-C2597 1 = E 2 = C 3 = E 4= B 5 = C SCT-595 Maximum Ratings Parameter Symbol Value Unit , , f = 100 MHz h - 100 - MHz Collector-base capacitance Vqb = 10 V, f= 1 MHz Ccb - 80 - PF 1 ) Pulse
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BF180

Abstract: BF115 CDU TO-72 DIM MIN MAX A 5,24 5,84 B 4,52 4,95 C 4,31 5,33 D 0,40 0,53 E - 0,76 F 1.14. 1,39 G 2,28 . 2,97 H 0,91 1,17 J 0,71 1,22 K 12,7 - L 12 DEG 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available in TO-72 CDIL Code Style PIN 1 PIN 2 PIN 3 PIN 4 TO-72 Emitter Base Collector Case TO-72-1 Base Emitter Collector Case TO-72-2 Source Drain Gate Case TO-72 Metal-Can Package , ) Type No. vceo (V) Min VcEO (V> Min VEBO (V) Min ' Po (W) @Ta=25°C 'c (A) 'cbo (MA) Max Vqb « (V 'ces
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2N917 2N918 2N3933 2N5179 BF115 BF167 BF180 BF184 BF181 2N918 pin configuration

AD7528

Abstract: A07528 recommended operating temperature range, VrefA "" VrefB - 10 V, Vqa and Vqb at 0 V (unless otherwise noted , , and Vqb at 0 V (unless otherwise noted) PARAMETER TEST CONDITIONS VDD-5V VDD-15V UNIT MIN TYP , recommended values. Adjust R1 for Voa = o V with code 10000000 in DACA latch. Adjust R3 for Vqb = 0 V with , limits will drive the output high. test input" 0 to -vref data ( inputs i (4) + Vref (141 i (71 (15)1 (16 , to 15.5 dB range. Attenuation db « -20 logio D/256, D = digital ilnput code If 3) V,NA VQB OUTPUT
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AD7528 PM-7528 TMS320 A07528 AD7528K PM7528 15-V AD7528B SDI33 TL287

MMT807

Abstract: MMT809 MMT807 (silicon) NPN SILICON ANNULAR TRANSISTOR MICRO POWER SERIES designed for high-frequency, low-power amplifier applications. DC Current Gain @ Ultra Low Current - hFE = 125 (Typ) , Collector-Emitter Saturation Voltage vCE(satl m Vdc (IC = 10 MAdc, I B = 1 0 MAdc) - 71 100 (lc = 1.0 mAdc
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MMT809

mikroelektronik ddr

Abstract: Halbleiterbauelemente DDR RWN RWN VQ 135 VQA 12 VQA 13 15 23 33 37 o VQ A 0 VQ A 0 VQ A VQB VQB VQB 0 VQD 71 73 30 , 20 30 32 40 42 73 12 13 54 61 71 206 207 236 237 238 239 168 121 122 123 126 127 128 129 131 10
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mikroelektronik ddr Halbleiterbauelemente DDR VEB mikroelektronik A910D diode sy-170 DDR-1026

2SC4544

Abstract: fT - le COMMON EMITTER Vce = 10V = 100° 71 , °C 1 3 10 30 100 300 COLLECTOR-BASE VOLTAGE VQB (V) tw o a O Hi (SS Ã'g H 55 £ t H 500 300
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2SC4544 SC-67 2-10R1A

M01130

Abstract: 55S5 0.016 0 021 e SOU C 0.21 IBtt H 0 71 0.86 0.028 0.034 J 0.71 1.14 0.029 0.045 K IS 70 - 0.500 - M , Output Capacitance < Vqb = 10 Vdc, I £ = 0, f = 100 kHz) MD1130.F cob 3.5 4.0 pF MATCHING
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MD1123 MD1130F IVID1123 M01130 55S5 MD11 M01130F MD1121 MD1122

A1070

Abstract: tc258c =10V i Ol Ol PI PI b !S N/ evi , =25°C 0.5 1 3 5 10 30 50 100 200 COLLECTOR-BASE VOLTAGE VQB (V) £ o H
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KTC3467 KTA1070 A1070 tc258c 150MH T0-92L

2N1025

Abstract: 2N1026 1.14 8 K .028 .034 .71 .86 L . t\i 1 .37 i .ni M . 1414Nom 3.59Nom fi N . 0707Nom 1.80Nom 6 , ) End points: PnllA.«/» t-n knDA wuc^vui ku uaoc cutoff current 3036 glue rtnnA H Vqb 53 "35 , operation life 1027 PT = 250 mW Vqb = -10 Vdc time = 340 hours #-_A n A \ Vsee t.o.tj End points
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2N1025 2N1026 2N1469 2N1026 JAN CU10A 2N146 MIL-5-19500/78C MIL-S-19500/78B MIL-S-19500/78C

2SA1253

Abstract: 2SC3135 tOOff I 5 I f- 3f~ _ wo â 5 71 1 I T> 5 3| % to o to fT - IC â J.O 2SAI253 -VCE=-6V ~ Puis® . ~2 ^ â'ž , -»0 -XX) Collector current, lc - mA Cob ~ VCB 21 ry -\.o - - - â  -10. Collector to base voltage, Vqb
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2SA1253 2SC3135 2SA31 1049D 2SA1253/2SC3135

M74 marking

Abstract: BSS83 M74 71 lOfl2b 001^570 bS3 «PHIN BSS83 7 V. MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and , = 0; Iq = 10 nA; open source Source-substrate breakdown voltage Vqb = 0; Iq = 10 nA; open drain
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M74 marking BSS83 M74 50J2 m74 lg MARKING J1A 7Z87623 7Z92669
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