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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

um 44 diode

Catalog Datasheet MFG & Type PDF Document Tags

HI155G1S02R

Abstract: laser diode 1550 nm = flat fiber - 01 Emitter Size 03= 75 µm 04= 100 µm 3J09= 225 µm x 10 µm Diode Configuration 1S , Kingdom Laser Components (UK) Ltd. Tel: +44 1245 491 499 Fax:+44 1245 491 801 info@lasercomponents.co.uk , = 21°C, tW= 150 ns, Prr= 6.66 kHz Parameter Integrated Pulsed Laser Diode Po ex fiber at iFM, (min , -L-0-01 905D1S03R 4.75 W 105 µm / 125 µm 0.15 7A 200 mA 905D1S03FP-10/22-F-0-01 905D1S03R 3.5 W 105 µm / 125 µm 0.22 , = 150 ns, Prr= 6.66 kHz Parameter Integrated Pulsed Laser Diode Po ex fiber at iFM, (min.) Fiber core
Laser Components
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HI155G1S02R laser diode 1550 nm 600 um laser fiber medical HI155G1S04R LTH 1550 01 905D1S03FP-10/15-L-0-01 905D1S

905D1S03R

Abstract: LTH 1550 01 µm 04= 100 µm 3J09= 225 µm x 10 µm Diode Configuration 1S= single stack 2S= double stack Length 1m , Kingdom Laser Components (UK) Ltd. Tel: +44 1245 491 499 Fax:+44 1245 491 801 info@lasercomponents.co.uk , = 21°C, tW= 150 ns, Prr= 6.66 kHz Parameter Integrated Pulsed Laser Diode Po ex fiber at iFM, (min , -L-0-01 905D1S03R 5W 105 µm / 125 µm 0.15 7A 200 mA 905D1S03FP-10/22-F-0-01 905D1S03R 3.5 W 105 µm / 125 µm 0.22 7A , ns, Prr= 6.66 kHz Parameter Integrated Pulsed Laser Diode Po ex fiber at iFM, (min.) Fiber core
Laser Components
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diode v6 905D1S3J09R HI155G1S04FP-10 905D1S3J03R um 44 diode HI155G 905D1S03F
Abstract: Laser Diodes Pulsed Laser Diode Module LS-Series Description The LS-series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a , Optical trigger United Kingdom Laser Components (UK) Ltd. Tel: +44 1245 491 499 Fax: +44 1245 491 , Diodes Pulsed Laser Diode Module LS-Series Specifications for 850 nm PLD-Modules Part Number , Emitting Area 150 x 1 kHz µm*µm Package S 10 - Operating Voltage +12 VDC Laser Components
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5060 LED

Abstract: 5024 led Vibration resistance Solder bath temperature Soldering time 4C/O AgNi, AgNi/Au 0.2 um, AgNi/Au 5 um 250 V / 250 V 5V 6 A / 250 V AC 6 A / 24 V DC 5 mA AgNi, 5 mA AgNi/Au 0.2 um, 2 mA AgNi/Au 5 um 12 A 6A 1 500 VA 0.3 W AgNi, 0.3 W AgNi/Au 0.2 um, 0.1 W AgNi/Au 5 um 100 m AC: 10 ms AC: 8 , 4.4 4.4 4.4 21.2 6.5 6.2 6.3 6.3 4.1 27.5 Dimensions - plug-in version (WT), with test , plug-in version (WT), with lockable front test button type T 2.2x0.5 4.4 4.4 4.4 21.2 2.2x0.5
Durakool
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5060 LED 5024 led R4P-0001-A R4P-0001-D R4W-0003-A R4W-0003-D D4-2014-23-5230-WTL

7040 TTL

Abstract: 905 nm Infrared Emitting Diode Pulsed Laser Diode Module LS-/LT-Series Description The LS- and LT series of pulsed laser diode , , info@laser-components.com Great Britain: LASER COMPONENTS (UK) Ltd., Phone: + 44 1245 491 499, Fax: +44 1245 491 801 , , info@optophotonics.fr Pulsed Laser Diode Module, LS-/LT-Series Specifications for 905 nm PLD-Module Part number , +12 LS9-250-5M10-00 905 250 5.0 1250 37 TTL Ç 0.015 30 200*250 M10 +12 Dim. nm W ns nJ mW % kHz µm*µm , +12 TTL pos. 0.1 100 nm W ns nJ mW % kHz µm*µm VDC % kHz Germany and other countries: LASER
Laser Components
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7040 TTL 905 nm Infrared Emitting Diode LS588

905 nm Infrared Emitting Diode

Abstract: 1 Watt 808 nm laser diode Pulsed Laser Diode Module LS-/LT-Series DESCRIPTION The LS- and LT series of pulsed laser diode , 7041, info@laser-components.com Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk France: OPTOPHOTONICS sa, Phone: +33 1 3959 5225, Fax: +33 1 3959 5350, info@optophotonics.fr Pulsed Laser Diode Module, LS-/LT-Series SPECIFICATIONS , M10 +12 Dim. nm W ns nJ mW % kHz µm*µm VDC % kHz Part Number Wavelength Optical Peak Power (NA>0.5
Laser Components
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1 Watt 808 nm laser diode S10 diode S10 package light sensitive trigger all components

ma4agsw1a

Abstract: J1 diode pads are 120 µm x 120 µm AlGaAs SPST Non-Reflective PIN Diode Switch MA4AGSW1A V 1.00 , n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 AlGaAs SPST Non-Reflective PIN Diode , : Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 AlGaAs SPST Non-Reflective PIN Diode Switch , n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 AlGaAs SPST Non-Reflective PIN Diode , MA4AGSW1A AlGaAs SPST Non-Reflective PIN Diode Switch Features V 1.00 MA4AGSW1A Layout
M/A-COM
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ma4agsw1a J1 diode Microwave PIN diode SN62 PB36 ag2

1301F

Abstract: 1300nm Laser Diode Singlemode Fiber Pigtail SCW/QCW 1300 Series Laser 1300 nm Up to 2mW , feed throughs and a double fiber ferrule to relieve fiber stress. Laser Diode, Inc. devices are , designed to comply with the advisory guidelines of Bellcore. Laser Diode is also running a quality program , +85 50 13 20 12 9 8-10 2 44 5-30 60 30 17 33 33 05 12 130 -35 40 50 10 6 20 10 0 5 to 0 25 - 25 to +75 40 to +85 50 13 20 12 9 8-10 2 44 5-30 60 30 17 50 0 05 12 130 35 40 50 to 6 20 10 0 5 to 0 25 -0 25
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1301F ISO-9001 1301-XXX QCW1301

data of coolar

Abstract: 0.05 0.5 30 70 40 1.7 0.05 0.5 Monitor Diode Photocurrent at Pm av (m in) M axim um dark current M , 1300nm Laser Diode Singlemode Fiber Pigtail SCW/QCW 1300 Series Laser 1300 nm M Q W Laser , throughs and a double fiber ferrule to relieve fiber stress. Laser Diode, Inc. devices are designed to meet , the advisory guidelines of Bellcore. Laser Diode is also running a quality program to meet the , cooler for temperature stabilization. An InGaAs, rear laser facet monitor diode Is included for optical
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data of coolar SCW1301-XXX APP-100 1301G 130XX-XXX
Abstract: Features Product Specifications â'¢ Up to 10W CW output power from 400 um 0.22NA and 200um , internal thermistor, TEC, photodiode, and SMA Connector. Output fiber comes with 400 µm or 200um core , , info@lasercomponents.com Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801 , ) Wavelength: 808 2 200 µm fiber HF-808-010W-45C 4 400 µm fiber Y Option (wavelength , contacting our Sales Team. Safety Caution: Laser light emitted from any diode laser is invisible and may Laser Components
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Abstract: /fall time Monitor Diode Photocurrent at Pm ax (min) M axim um d ark current M axim um ca p a cita n , 1550nm Laser Diode Singlemode Fiber Pigtail SCW 1500 Series Laser 1550 nm M QW Laser , fiber stress. Laser Diode, Inc. devices are designed to meet the lifetime and reliability requirements , . Laser Diode is also running a quality program to meet the requirements of ISQ-9001. JUNE 1995 , laser facet monitor diode is included for optical stabilization and a thermistor (grounded or floating -
OCR Scan
1500-XXX 150XX-XXX
Abstract: Diodes 90 µm (6-8 W) â'¢ High Quality, Reliability, & Performance Applications â'¢ Material , available with up to 8 W of continuous output power from a 90 µm single emitter chip. Axcelâ'™s trademark , 8142 2864 11, info@lasercomponents.com Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk France: LASER COMPONENTS S.A.S., Phone: +33 1 , um 12 W Lasers 3.0 2.0 1.0 0.0 0 5,000 10,000 15,000 Current (mA) Determining Laser Components
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Abstract: LASER DIODE Laser diode L8231/L7551 series Receptacle type, 1.3 µm, 1.25 · 2.5 Gbps L8231 and L7551 series are high-speed infrared emitters specifically developed for 1.3 µm band optical fiber communications. These devices incorporate a high-speed Fabry-Perot laser diode integrated in a receptacle module , High-speed Fabry-Perot laser diode l Optical fiber communications l Fiber channel l Gigabit ethernet l , single-mode optical fiber (mode field diameter 9.5 µm) with a master plug. Unit µm V mA mW ps Gbps mA s Hamamatsu Photonics
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D-82211 SE-171 KLED1018E01
Abstract: Laser Diodes 635 nm ~ 650 nm HHL Package Fiber-Coupled Laser Diode BLD-63-05-400-10-F-f-c-l-22 BLD-65-10-400-10-F-f-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized , quality. The products are achieved by transforming the asymmetric radiation from the laser diode chip , Features: âªâª âªâª âªâª âªâª 635 nm, 650 nm wavelength 400 mW output power 105 µm or 200 µm fiber core diameter 0.22 NA Applications: âªâª Medical use âªâª Material processing Laser Components
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BLD-63-05-400-10-F- BLD-65-10-400-10-F-
Abstract: Data sheet 8W / 7W 9xx nm High Power Single Emitter Laser Diode on Submount SESx-9xx-01 The Bookham SESx-9xx-01 single emitter laser diode series has been designed to provide the high output power , other high power laser diode applications. The proprietary E2 front mirror passivation process, developed at our Zurich site, prevents Catastrophic Optical Damage (COD) to the laser diode facet even at , diode â'¢ 90µm wide emitter â'¢ 8W / 7W operating power (p-side down mounted) â'¢ Highly reliable Bookham Technology
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SES8-915-01 SES8-940-01 SES8-960-01 SES7-975-01 21CFR

1610b

Abstract: L7551 LASER DIODE Laser diode L8231/L7551 series Receptacle type, 1.3 µm, 1.25, 2.5 Gbps L8231 and L7551 series are high-speed infrared emitters specifically developed for 1.3 µm band optical fiber communications. These devices incorporate a high-speed Fabry-Perot laser diode integrated in a receptacle module , -23 MU -32 Panel FC -44 Board & panel LC 1 L8231/L7551 series Laser diode , High-speed Fabry-Perot laser diode l Optical fiber communications l Fiber channel l Gigabit ethernet l
Hamamatsu Photonics
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1610b L7551-21 L7551-22 L8231-21 L8231-22 KLED1018E04

capacitor 100pf

Abstract: FMA3007 (µm) MIN. BOND PAD OPENING (µm x µm ) 3150 x 1780 100 220 120 x 120 2 Tel: +44 , chip diode for temperature monitoring the gain can be automatically controlled. VG TYPICAL , TYP TYP MAX MAX UNITS UNITS Note: TAMBIENT = +25°C, Z0 = 50 1 Tel: +44 (0 , Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com FMA3007 , COORDINATES (µm) A RF in RF in (140, 1153) B VDP (+Ve) Temperature (2097, 140
Filtronic
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MIL-HDBK-263 capacitor 100pf instrumentation and control and schematic diagram 2-20GHZ 2-20GH 22A114 MIL-STD-1686
Abstract: 0.85 µm 1.0 VR = 5V IR = 10ï' Âµ A 0.4 30 A/W 10 44 Volts VR = 2V 0.45 , LX3051 3.125 Gbps ® TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET KEY , modules and combination PIN photo diode â'" transimpedance amplifier. LX3051 single die Coplanar , Microsemi .C OM Microsemiâ'™s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and , (gnd-signal-gnd) 50 ohm characteristic impedance 125 um standard pad pitch for ease of test Large 75um x 75um Microsemi
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OC-48 8B/10B

jdsu optic switch

Abstract: 808 nm 100 mw COMMERCIAL LASERS Diode Lasers, High Brightness 0.6 to 8.5 W, 8xx nm 24xx Series Key Features · 35 ­ 200 µm aperatures available · High-efficiency, MOCVD quantum well design · Open heat sink packages and encapsulated devices · High reliability The 24xx series diode lasers represent a , brightness family of CW diode lasers available in the industry. Applications · Solid-state laser , pattern typical of broad-area emitters. The 24xx series offer up to 8.5 W of output from a 200 µm
JDS Uniphase
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jdsu optic switch 808 nm 100 mw CW laser diode 808 nm 2455-G1 to56 Laser Diode 808 nm 5w 498-JDSU 5378-JDSU 24XXDIODELASER

FR4 epoxy dielectric constant 4.4

Abstract: AT84AS004 Copper thickness = 40 µm AC signals traces = 50 microstrip lines DC signals traces (B/GB, GA, ADC Diode , Layer 15 Copper layer Copper thickness = 40 µm DC signals traces (B/GB, GA, Diode, SDA) Ground , . 4-1 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 Introduction , .4-2 DMUX class="hl">4-4 Diode for Die Junction Temperature Monitoring .4-7 Test Bench
Atmel
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AT84AS004-EB 5432B FR4 epoxy dielectric constant 4.4 AT84AS004 FR4 dielectric constant 4.4 thickness 1.6 FR4 epoxy dielectric constant 4.2 HP8665 FR4 epoxy dielectric constant 3.2
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