PC4570 PC4570C 4570G2 PC4570G2 PC4570HA G10528EJ6V0DS00 IC-1996 G10528EJ6V0DS

BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4570 ULTRA LOW-NOISE, WIDEBAND, DUAL OPERATIONAL AMPLIFIER DESCRIPTION The

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4570 PC4570 ULTRA LOW-NOISE, WIDEBAND, DUAL OPERATIONAL AMPLIFIER DESCRIPTION The µPC4570 PC4570 is an ultra low-noise, wideband high slew-rate, dual operational amplifier. Input equivalent noise is three times better than the conventional 4558 type op-amps. The gain bandwidth products and the slew-rate are seven times better than 4558. In spite of fast AC performance, the µPC4570 PC4570 is extremely stable under voltage-follower circuit conditions. Supply current is also improved compared with conventional wideband op-amps. The µPC4570 PC4570 is an excellent choice for pre-amplifiers and active filters in audio, instrumentation, and communication circuits. FEATURES · Ultra low noise : en = 4.5 nV/Hz · High slew rate : 7 V/ µs · High gain bandwidth product : GBW = 15 MHz at 100 kHz · Internal frequency compensation PIN CONFIGURATION (Top View) ORDERING INFORMATION Part Number Package µ PC4570C PC4570C, 4570G2 4570G2 µPC4570C PC4570C 8-pin plastic DIP (7.62 mm (300) µPC4570G2 PC4570G2 8-pin plastic SOP (5.72 mm (225) µPC4570HA PC4570HA 8 V+ OUT1 1 1 9-pin plastic slim SIP + I I1 2 7 OUT2 2 + EQUIVALENT CIRCUIT (1/2 Circuit) I N1 3 V 4 V+ Q7 Q5 Q11 Q3 R2 Q4 C1 R3 OUT Q10 R4 2 R10 3 4 5 6 7 8 9 + 1 Q15 Q6 OUT 2 R9 Q12 I I2 R8 R6 I N2 C2 2 + V R5 OUT1 IN 1 + Q16 Q9 I I1 R7 Q2 I N1 Q13 V+ Q1 µ PC4570HA PC4570HA Q14 Q8 II 5 I N2 V R1 6 I I2 D V- The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G10528EJ6V0DS00 G10528EJ6V0DS00 (6th edition) (Previous No. IC-1996 IC-1996) Date Published October 2001 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 1987 µPC4570 PC4570 ABSOLUTE MAXIMUM RATINGS (T A = 25°C) Parameter + Symbol Note 1 + Ratings V -V Differential Input Voltage VID Input Voltage Note 2 Output Voltage Power Dissipation V + VI Note 3 V ±30 Voltage between V and V Unit 0.3 to +36 + V 0.3 to V +0.3 V VO C Package Note 4 G2 Package HA Package Output Short Circuit Duration V 0.3 to V +0.3 V PT 350 mW 440 mW 350 mW 10 sec Note 5 Note 4 Note 6 Operating Ambient Temperature TA 20 to +80 °C Storage Temperature Tstg 55 to +125 °C Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is 5.0 mW/°C when operating ambient temperature is higher than 55°C. 5. Thermal derating factor is 4.4 mW/°C when operating ambient temperature is higher than 25°C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Symbol ± MIN. ±4 TYP. MAX. Unit ±16 V Supply Voltage V Output Current IO ±10 mA Source Resistance RS 50 k Capacitive Load (AV = +1) CL 100 pF 2 Data Sheet G10528EJ6V0DS G10528EJ6V0DS µPC4570 PC4570 ELECTRICAL CHARACTERISTICS (T A = 25°C, V± = ±15 V) Parameter Input Offset Voltage Input Offset Current Input Bias Current Symbol Note MIN. RS 50 TYP. MAX. Unit ±0.3 ±5 mV IIO ±10 ±100 nA IB 100 400 nA 8 mA VIO Note Conditions Large Signal Voltage Gain AV RL 2 k , VO = ±10 V Supply Current ICC IO = 0 A, Both Amplifiers Common Mode Rejection Ratio CMR 80 100 dB Supply Voltage Rejection Ratio SVR 80 100 dB Output Voltage Swing Vom RL 10 k ±12 ±13.4 V RL 2 k ±10 ±12.8 V ±12 ±14 V 30,000 300,000 5 Common Mode Input Voltage Range VICM Slew Rate SR RL 2 k 5 7 V/µ s Gain Bandwidth Product GBW fO = 100 kHz 10 15 MHz Unity Gain Frequency funity open loop 7 MHz Phase Margin unity open loop 50 degree Total Harmonic Distortion THD VO = 3 Vr.m.s., f = 20 Hz to 0.002 % RIAA (Figure2) 0.9 µVr.m.s. FLAT+JIS A, RS = 100 0.53 20 kHz (Figure1) Input Equivalent Noise Voltage Vn 0.65 µVr.m.s. (Figure3) Input Equivalent Noise Current Density Channel Separation en in fO = 10 Hz, RS = 100 5.5 nV/Hz fO = 1 kHz, RS = 100 Input Equivalent Noise Voltage Density 4.5 nV/Hz fO = 1 kHz 0.7 pA/Hz f = 20 Hz to 20 kHz 120 dB Note Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. Data Sheet G10528EJ6V0DS G10528EJ6V0DS 3 µPC4570 PC4570 MEASUREMENT CIRCUIT Figure1 Total Harmonic Distortion Measurement Circuit - VO = 3 Vr.m.s. + 2 k Figure2 Noise Measurement Circuit (RIAA) 2 400 pF 610 47 µF + - 30 k 8 200 pF 330 k 1.5 µF + 2.2 k 33 µF 56 k + + 40 dB Amp. LPF (fO = 30 kHz) 100 k VO = (36.5 dB+40 dB) × Vn VO Vn = 76.5 dB Figure3 Noise Measurement Circuit (FLAT+JIS A) 10 k - 100 JIS A + RS = 100 4 Data Sheet G10528EJ6V0DS G10528EJ6V0DS VO = 40 dB × Vn VO Vn = 40 dB µPC4570 PC4570 TYPICAL PERFORMANCE CHARACTERISTICS (T A = 25°C, TYP.) POWER DISSIPATION OPEN LOOP FREQUENCY RESPONSE 500 Av - Open Loop Voltage Gain - dB PT - Total Power Dissipation -mW 600 µ PC4570G2 PC4570G2 400 300 µ PC4570C PC4570C, 4570HA 4570HA 200 100 0 20 40 60 80 120 _ + V + = _ 15 V 100 80 60 40 20 0 100 1 TA - Operating Ambient Temperature - °C VO _ - Output Voltage - V 10 ± V = ±15 V ±10 VO- IO SINK ±5 VO+ IO SOURCE + Vom - Output Voltage Swing - Vp-p + _ 20 0 100 1k 10 k 100 k 1M 0 10 M 20 40 60 80 IO - Output Current - mA f - Frequency - Hz SUPPLY CURRENT SUPPLY CURRENT 8 8 _ + V + = _ 15 V ICC - Supply Current - mA ICC - Supply Current - mA 1 k 10 k 100 k 1 M 10 M OUTPUT CURRENT LIMIT ±15 _ V = + 15 V RL = 10 k 100 f- Frequency - Hz LARGE SIGNAL FREQUENCY RESPONSE 30 10 6 4 2 0 -20 6 4 2 0 0 20 40 60 80 TA - Operating Ambient Temperature - °C Data Sheet G10528EJ6V0DS G10528EJ6V0DS + _ 10 0 + _ 20 + _ V - Supply Voltage - V 5 µPC4570 PC4570 VOLTAGE FOLLOWER PULSE RESPONSE COMMON MODE INPUT VOLTAGE RANGE 10 VO - Output Voltage - V VICM - Common Mode Input Voltage Range - V 20 10 0 -10 -20 5 0 -5 -10 + 20 _ +10 _ 0 _ + V + = _ 15 V AV = 1 RL = 2 k 0 2 V - Supply Voltage - V INPUT EQUIVALENT NOISE VOLTAGE (FLAT+JIS A) 8 + _ + V = _ 15 V 10 1 0.1 10 1k 10 k 100 k THD - Total Harmonic Distortion - % 1 _ + V + = _ 15 V VO = 3 Vr.m.s. AV = 1 RL = 2 k 0.1 0.01 0.001 100 1k 10 k 100 k f - Frequency - Hz 6 _ + V + = _ 15 V RS = 100 6 4 2 10 100 1k 10 k f - Frequency - Hz TOTAL HARMONIC DISTORTION 10 8 0 100 RS - Source Resistance - 0.0001 6 INPUT EQUIVALENT NOISE VOLTAGE DENSITY en -Input Equivalent Noise Voltage Density - nV/ Hz Vn -Input Equivalent Noise Voltage - µVr.m.s. 100 4 t - Time - µ s + _ Data Sheet G10528EJ6V0DS G10528EJ6V0DS 100 k µPC4570 PC4570 PACKAGE DRAWINGS (Unit: mm) 8-PIN PLASTIC DIP (7.62mm(300) 8 5 1 4 A K J L P I C H G B M R F D N M NOTES ITEM 2. ltem "K" to center of leads when formed parallel. MILLIMETERS A B 10.16 MAX. 1.27 MAX. C 1. Each lead centerline is located within 0.25 mm of its true position (T.P.) at maximum material condition. 2.54 (T.P.) D 0.50±0.10 F 1.4 MIN. G H 3.2±0.3 0.51 MIN. I J 4.31 MAX. 5.08 MAX. K 7.62 (T.P.) L 6.4 M 0.25 +0.10 -0.05 N 0.25 P 0.9 MIN. R 015° P8C-100-300B P8C-100-300B,C-2 Data Sheet G10528EJ6V0DS G10528EJ6V0DS 7 µPC4570 PC4570 8-PIN PLASTIC SOP (5.72 mm (225) 8 5 detail of lead end P 4 1 A H F I G J S B C D M L N K S M E NOTE ITEM Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. MILLIMETERS A 5.2 +0.17 -0.20 B 0.78 MAX. C 1.27 (T.P.) D 0.42 +0.08 -0.07 E 0.1±0.1 F 1.59±0.21 G 1.49 H 6.5±0.3 I 4.4±0.15 J 1.1±0.2 K 0.17 +0.08 -0.07 L 0.6±0.2 M 0.12 N 0.10 P 3° +7° -3° S8GM-50-225B-6 S8GM-50-225B-6 8 Data Sheet G10528EJ6V0DS G10528EJ6V0DS µPC4570 PC4570 9-PIN PLASTIC SLIM SIP A N M 1 Q 9 Y V H C F K G M U J Z NOTE ITEM Each lead centerline is located within 0.25 mm of its true position (T.P.) at maximum material condition. A MILLIMETERS 22.86 MAX. C 1.1 MIN. F 0.5±0.1 G H J 0.25 2.54 1.27 MAX. K 0.51 MIN. M 5.08 MAX. N Q 2.8±0.2 5.75 MAX. U 1.5 MAX. 0.25 +0.10 -0.05 V Y 3.2±0.5 Z 1.1 MIN. P9HA-254B-2 P9HA-254B-2 Data Sheet G10528EJ6V0DS G10528EJ6V0DS 9 µPC4570 PC4570 5 RECOMMENDED SOLDERING CONDITIONS When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to our document " SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL"· (C10535E C10535E). Type of Surface Mount Device µPC4570G2 PC4570G2: 8-pin plastic SOP (5.72 mm (225) Process Infrared Ray Reflow Conditions Symbol Peak temperature: 230°C or below (Package surface temperature), IR30-00-1 IR30-00-1 Reflow time: 30 seconds or less (at 210°C or higher), Maximum number of reflow processes: 1 time. Vapor Phase Soldering Peak temperature: 215°C or below (Package surface temperature), VP15-00-1 VP15-00-1 Reflow time: 40 seconds or less (at 200°C or higher), Maximum number of reflow processes: 1 time. Wave Soldering Solder temperature: 260°C or below, Flow time: 10 seconds or less, WS60-00-1 WS60-00-1 Maximum number of flow processes: 1 time, Pre-heating temperature: 120°C or below (Package surface temperature). Partial Heating Method Pin temperature: 300°C or below, Heat time: 3 seconds or less (Per each side of the device). Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the device will be damaged by heat stress. Type of Through-hole Device µPC4570C PC4570C: 8-pin plastic DIP (7.62 mm (300) , µPC4570HA PC4570HA: 9-pin plastic slim SIP Process Conditions Wave Soldering Solder temperature: 260°C or below, (only to leads) Flow time: 10 seconds or less. Partial Heating Method Pin temperature: 300°C or below, Heat time: 3 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. 10 Data Sheet G10528EJ6V0DS G10528EJ6V0DS µPC4570 PC4570 [MEMO] Data Sheet G10528EJ6V0DS G10528EJ6V0DS 11 µPC4570 PC4570 · The information in this document is current as of October, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. · No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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