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UPA802T-A California Eastern Laboratories (CEL) TRANSISTOR NPN HF 7GHZ SOT363 visit Digikey Buy
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uPA802T Datasheet

Part Manufacturer Description PDF Type
UPA802T California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original
UPA802T N/A SMD, High Frequency Amplifier, 20V 65mA 110mW 7GHz, Silicon NPN Transistor (integrated circuit) Original
UPA802T NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD Original
UPA802T-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN HF 7GHZ SOT363 Original
uPA802TC NEC NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD Original
UPA802TC-T1 NEC 6-pin small MM high-frequency double transistor Original
uPA802TC-T1 NEC NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD Original
uPA802TFB NEC High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini Mold Original
uPA802TFB-T1 NEC High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini Mold Original
uPA802TGB NEC High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini Mold Original
uPA802TGB-T1 NEC High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini Mold Original
UPA802T-T1 NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD Original
UPA802T-T1-A California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original
UPA802T-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN HF 7GHZ SOT363 Original

uPA802T

Catalog Datasheet MFG & Type PDF Document Tags

a 3120 0537

Abstract: UPA802T bridge. For Tape and Reel version use part number UPA802T-T1, 3K per reel. California Eastern , INFORMATION PART NUMBER UPA802T-T1-A QUANTITY 3000 PACKAGING Tape & Reel Life Support , NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · · · · · UPA802T OUTLINE DIMENSIONS , 0.65 4 2.0 ± 0.2 DESCRIPTION 0.2 (All Leads) 1.3 NEC's UPA802T is two NPN high , CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPA802T S06
California Eastern Laboratories
Original
NE681 a 3120 0537 741 LEM 22S21 S21E transistor c 5299
Abstract: the tape. µPA802T-T1 0.15 â'"0 0~0.1 ORDERING INFORMATION 0.7 0.9±0.1 â , PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA802T has built-in 2 , '¢ Low Noise PART NUMBER QUANTITY +0.1 PACKING STYLE µPA802T Loose products (50 PCS , Printed in Japan © 1995 µPA802T ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL -
Original
2SC4227

PT 8519

Abstract: PT 4207 the tape. µPA802T-T1 0.15 ­0 0~0.1 ORDERING INFORMATION 0.7 0.9±0.1 · Built-in 2 , PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA802T has built-in 2 , Noise PART NUMBER QUANTITY +0.1 PACKING STYLE µPA802T Loose products (50 PCS , µPA802T ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL CONDITION MIN. TYP. MAX
NEC
Original
PT 8519 PT 4207 marking R34

c 5929 transistor

Abstract: transistor c 5299 terminal capacitance bridge. For Tape and Reel version use part number UPA802T-T1, 3K per reel , Available Gain MSG = Maximum Stable Gain ORDERING INFORMATION PART NUMBER UPA802T-T1 QUANTITY 3000 , GAIN BANDWIDTH: fr = 7 GHz LOW CURRENT OPERATION UPA802T OUTLINE DIMENSIONS (umts in mm , UPA802T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT , =25 c) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO Iebo hFE 1 fT UPA802T S06 UNITS |l l A |uA 70 GHz
-
OCR Scan
c 5929 transistor Transistor C 4927 transistor rf m 9860 IC 14093 m 9860 transistor transistor on 4436

UPA802T

Abstract: terminal capacitance bridge. For Tape and Reel version use part number UPA802T-T1,3K per reel. UPA802T , Frequency, f (GHz) Collector Current, Ic (mA) ORDERING INFORMATION PART NUMBER UPA802T-T1 QUANTITY , GAIN BANDWIDTH: fr = 7 GHz LOW CURRENT OPERATION UPA802T OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S06 (Top View) DESCRIPTION The UPA802T is two NPN high frequency silicon epitaxial , . ELECTRICAL CHARACTERISTICS (Ta = 25°c) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO lEBO hFE 1 UPA802T S06
-
OCR Scan
IS21EI2

transistor s11 s12 s21 s22

Abstract: 741 LEM bridge. For Tape and Reel version use part number UPA802T-T1, 3K per reel. California Eastern , INFORMATION PART NUMBER UPA802T-T1 QUANTITY 3000 PACKAGING Tape & Reel EXCLUSIVE NORTH AMERICAN , NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · · · · · UPA802T OUTLINE DIMENSIONS , 0.65 4 2.0 ± 0.2 DESCRIPTION 0.2 (All Leads) 1.3 The UPA802T is two NPN high frequency , (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPA802T S06 UNITS
Renesas Electronics
Original
transistor s11 s12 s21 s22 c 3420 transistor hfe 4538 transistor j50 transistor zo 607

c 5929 transistor

Abstract: transistor k 2541 terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA802T-T1, 3K per , INFORMATION PART NUMBER UPA802T-T1-A QUANTITY 3000 PACKAGING Tape & Reel CALIFORNIA EASTERN , SILICON TRANSISTOR UPA802T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · · · · · SMALL , DIMENSIONS (Units in mm) PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 The UPA802T is two NPN high , UNITS A A 70 4.5 100 7.0 0.9 MIN UPA802T S06 TYP MAX 0.8 0.8 240 |S21E|2 Notes: 1. Pulsed
California Eastern Laboratories
Original
transistor k 2541 lem 723 733 2955 transistor

0 811 404 614

Abstract: PA802 Silicon Transistor µPA802T NPN mm PA802T, VHFUHF 2.1±0.1 1.25±0.1 2 , CP(K) 1995 µPA802T TA = 25 MIN. VCB = 10 V, IE = 0 IEBO , 10 0.5 1 5 10 IC m 50 µPA802T Cre-VCB fr-IC 10 5.0 VCE = 3 V f = 1 , ICmA 3 µPA802T S (VCE = 3 V, IC = 7 mA, ZO = 50 ) FREQUENCY S21 S11 S12 S22 , 173.2 167.8 165.6 161.4 S12 S22 µPA802T S (VCE = 3 V, IC = 3 mA, ZO = 50 ) FREQUENCY
NEC
Original
ID-9143 0 811 404 614 PA802 A1201-5 P15123JJ1V0DSJ1

10 ghz transistor

Abstract: UPA802T terminal capacitance bridge. For Tape and Reel version use part number UPA802T-T1, 3K per reel , PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · · · · · UPA802T OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm , 6 2 5 3 0.65 4 2.0 ± 0.2 DESCRIPTION 0.2 (All Leads) 1.3 The UPA802T is , . ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS UPA802T S06 PARAMETERS
-
Original
10 ghz transistor npn dual emitter RF Transistor 2 ghz transistor

2SC4227

Abstract: . µPA802T-T1 0.15 ­0 0~0.1 ORDERING INFORMATION 0.7 0.9±0.1 · Built-in 2 Transistors (2 × , . PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA802T has built-in 2 low-voltage , NUMBER QUANTITY +0.1 PACKING STYLE µPA802T Loose products (50 PCS) Embossed tape 8 mm , -3636 (O.D. No. ID-9143) Date Published April 1995 P Printed in Japan © 1995 µPA802T ELECTRICAL
Renesas Electronics
Original

UPA801T

Abstract: UPA800T Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S06 2.1±0.1 1.25±0.1 2.0±0.2 RL 0.65 1 1.3 0.65 2 3 6 0.2 +0.1 -0 5 4 DOT ON BACK SIDE 0.9 ± 0.1 0.7 0 ~0.1 PART MARKING NUMBER UPA800T RL PART NUMBER UPA809T +0.1 0.15 -0.5 MARKING T88 UPA801T R24, R25 UPA810T 24R, 25R UPA802T R34, R35 UPA811T 44R, 45R UPA806T T83 UPA812T 34R, 35R
-
Original
UPA807T UPA814T UPA808T upa801 R24 marking t84 marking

BD304

Abstract: UPA802T Low Noise Bipolar Transistors ' TV#' VCE (V) S x n l* Ic TYP (mA) (dB) * VIP Hn te T Y P M AX (W A J Package P fcg. Faxon Dwnand ücloaning D ee No. DUAL BIPOLAR TRANSISTORS UPA800T M E V O UPA801T ÑiwO UPA802T N E V O UPA806T N E V O UPA807T N E VO UPA808T ÑiwO UPA809T N E V O UPA810T new) 2.0 2.0 1.0 2.0 2.0 2.0 2.0 1.0 2.0 1.0 2.0 3 3 5 7 7 3 3 3 7 7 5 7 :7 1.9 1.2 1.4 1.5 1.5 1.3 1.5 1.2 1.9 1.4 1.5 ' 3 3 3 3 2 2 3 3 3 3 3 .5 7 7 10 7 20 20 7 5 7 ·
-
OCR Scan
NE02132 BD304 NE02135 NE68035 NE68135 NE85635 NE85632

cascode transistor array VCO

Abstract: UPA802T 1.2@1 GHz 9.0@1 GHz UPA802T/UPA812T 9.0 65 1.4@1 GHz 12.0@1 GHz UPA800T/UPA811T 10.0
California Eastern Laboratories
Original
AN1028 cascode transistor array VCO RF transistors with s-parameters cascode transistor array transistor RF S-parameters

UPA827TF

Abstract: UPA833TF Low N oise Bipolar Transistors * VCE Ic TYP TYP (V) DUAL BIPOLAR TRANSISTORS UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA814T UPA821TF UPA826TF UPA827TF UPA828TF UPA831TF (Q1) UPA831TF (Q2) UPA832TF (Q1) UPA832TF (Q2) UPA833TF (Q1) UPA833TF (Q2) UPA834TF (Q 1) UPA834TF (Q2) UPA835TF (Q1) UPA835TF (Q2) UPA836TF (Q 1) UPA836TF (Q2) MICRO-X NE02135 NE68035 NE68135 NE85635 T O -9 2 NE02132 NE85632 NE02100 NE68000 NE68100 NE68800 NE85600 NE02107 NE696M01 NE698M01
-
OCR Scan
NE685 sot-363 dual sot363 SOT 363 SOT 153 175 sot363 NE699M01 NE688 NE856 NE686 NE687

transistor NEC D 587

Abstract: LS 1691 BM PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR (WITH BUILT-IN 2 ELEMENTS) M INI MOLD T he/xP A 802T has b u ilt-in 2 1 o w -v o It age tra n s is to rs w h ic h are d e sig ne d to a m p lify low n o ise in th e VHF band to th e U H F b a n d . PACKAGE DRAWINGS (U n it: m m ) FEATURES · Low N oise N F = 1.4 dB TYP , (2 x 2SC4227) ORDERING INFORMATION PART NUMBER ,uPA802T Q U A N T IT Y L o ose p ro d u c ts (50
-
OCR Scan
transistor NEC D 587 LS 1691 BM NEC D 587 l 9143

nec b1007

Abstract: T79 code marking UPA810T 24R, 25R UPA802T R34, R35 UPA811T 44R, 45R UPA806T T83 UPA812T 34R, 35R
California Eastern Laboratories
Original
C3206G nec b1007 T79 code marking C3206 marking s16 marking code C1H C3H marking NE68018 NE680 UPC2798GR C2798G UPC2726T UPC3206GR

m33 tf 130

Abstract: NESG204619 UPA802T 1.0 3 7 1.4 14.0 16.0 3 7 9.0 4.5 120 100 S06 SOT-363 NE856
California Eastern Laboratories
Original
NE68039 NE68139 NE68539 NE85639 NE68033 NE68133 m33 tf 130 NESG204619 NESG2046 NESG2030M042 mini mold transistor 25 uPA862TD

2SC5743

Abstract: 2SC5600 , Q2 TC, TF TC, TF µPA821TC, 2SC5006 TF µPA831TC, TF µPA802T 2SC5007
NEC
Original
2SC5743 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 PC8190/8191KRX-IF PC8194/8195KRX-IF PG2124TH 10TSSOP PC8172TB PC8187TB

uPA63

Abstract: UPA827TF Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP (GHz) (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening Oto Page Number DUAL BIPOLAR TRANSISTORS UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T UPA814T UPA821TF UPA826TF UPA827TF UPA828TF UPA831TF (Q1) UPA831TF (Q2) UPA832TF (Q1) UPA832TF (Q2) UPA833TF (Q1
-
OCR Scan
uPA63 UPAS34TF UPA636TF NE46V3410

transistor marking T79 ghz

Abstract: marking code C1H mmic Pager Part No. µPA800T µPA801T µPA802T 2SC5434 2SC5432 2SC5433 µPA804T µPA806T µPA807T , 7 4.5 3 0 1 µPA802T 2SC5433 20 10 1.5 200 65 3 7 70 240
NEC
Original
transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic data book transistors 2SA PU10015EJ04V0PF

814T

Abstract: NE68018 UPA810T 24R, 25R UPA802T R34, R35 UPA811T 44R, 45R UPA806T T83 UPA812T 34R, 35R
-
OCR Scan
814T NE46100 NE46134 NE85634 NE94430 E944321 NE94433
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