PA508TE SC-95 G16627JJ1V1DS00 G16627JJ1V1DS PW350 M8E02 - Datasheet Archive

 

2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4.

 

2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 MOS MOS FET with Schottky Barrier Diode µ PA508TE PA508TE N MOS FET µ PA508TE PA508TE 2.5 V mm 0.32 +0.1 ­0.05 0.65 ­0.15 +0.1 MOS FET 1 2.8 ±0.2 DC/DC 0.16+0.1 ­0.06 5 4 1.5 µ PA508TE PA508TE 0 to 0.1 1 2 3 MOS FET 0.95 0.65 0.95 RDS(on)1 = 40 m VGS = 4.5 V, ID = 1.0 A 1.9 RDS(on)2 = 42 m VGS = 4.0 V, ID = 1.0 A 2.9 ±0.2 0.4 2.5 V MOS FET 0.9 to 1.1 RDS(on)3 = 59 m VGS = 2.5 V, ID = 1.0 A VF = 0.35 V IF = 1.0 A Top View µ PA508TE PA508TE SC-95 SC-95_5p (Mini Mold Thin Type) 5 4 ZB 1 2 1: Gate 2: Source 3: Anode 4: Cathode 5: Drain 3 - - ESD VESD ±150 V C = 200 pF, R = 0 , 1 G16627JJ1V1DS00 G16627JJ1V1DS00 1 December 2003 NS CP(K) 2003 µ PA508TE PA508TE MOS FET A = 25°C T - VDSS VGS = 0 V 20 V - VGSS VDS = 0 V ±12 V ID(DC) ±2 A ID(pulse) PW10 µs, Duty Cycle1% ±8 A 0.57 W 150 °C PT FR-4 Tch 2 2500 mm ×1.6 mmt5 sec A = 25°C T VRRM 30 V IF(AV) 1 A 10 A +125 °C -55+125 °C 50 Hz 1 IFSM Tj 2 FR-4 Tstg 2 2500 mm ×1.6 mmt5 sec G16627JJ1V1DS G16627JJ1V1DS µ PA508TE PA508TE MOS FET A = 25°C T MIN. TYP. MAX. IDSS VDS = 20 V, VGS = 0 V 1 µA IGSS VGS = ±12 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 1.0 1.5 V | yfs | VDS = 10 V, ID = 1.0 A 1.0 3.3 RDS(on)1 VGS = 4.5 V, ID = 1.0 A 40 51 m RDS(on)2 VGS = 4.0 V, ID = 1.0 A 42 57 m RDS(on)3 VGS = 2.5 V, ID = 1.0 A 59 90 m VDS = 10 V, VGS = 0 V, f = 1.0 MHz 170 pF - S Ciss Coss 80 pF Crss 40 pF td(on) ID = 1.0 A, VGS = 4.0 V, VDD = 10 V 9 ns tr RG = 10 9 ns td(off) 15 ns tf 4 ns QG 2.7 nC - QGS 0.6 nC - QGD 1.0 nC 0.81 V ID = 2.0 A, VDD = 16 V, VGS = 4.0 V VF(S-D) IF = 2.0 A, VGS = 0 V PW350 PW350 µs, Duty Cycle2% A = 25°C T IF = 1.0 A IR CT f = 1.0 MHz, VR = 10 V 0.38 V µA VR = 10 V MAX. 200 VF TYP. 0.35 MIN. TEST CIRCUIT 1 SWITCHING TIME 36 TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RG IG = 2 mA VGS RL PG. pF Wave Form VDD 0 VGS 10% RL 50 VDD 90% PG. VDS 90% VGS 0 90% VDS VDS = 1 µs Duty Cycle 1% 10% 10% tr 0 td(off) Wave Form td(on) ton tf toff G16627JJ1V1DS G16627JJ1V1DS 3 µ PA508TE PA508TE MOS FET A = 25°C T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.7 100 0.6 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 80 60 40 20 Mounted on FR-4 board of 2 2500 mm x 1.6 mm 0.5 0.4 0.3 0.2 0.1 0 0 0 25 50 75 100 125 150 175 0 25 TA - Ambient Temperature - °C 50 75 100 125 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID - Drain Current - A R DS(on) Limited (at VGS = 4.5 V) ID(pulse) 10 PW = 1 ms ID(DC) 1 10 ms 0.1 100 ms Single pulse Mounted on FR-4 board of 2 2500 mm x 1.6 mm 5s 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W 1000 100 10 1 100 µ Single pulse Mounted on FR-4 board of 2 2500 mm x 1.6 mm PD (FET) : P (SBD) = 1: 0 1m 10 m 100 m 1 PW - Pulse Width - s 4 150 G16627JJ1V1DS G16627JJ1V1DS 10 100 1000 175 µ PA508TE PA508TE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 8 10 Pulsed 4.0 V 2.5 V VGS = 4.5 V 1 6 ID - Drain Current - A ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS 4 2 0 T A = 125°C 75°C 25°C -25°C 0.1 0.01 0.001 V DS = 10 V Pulsed 0.0001 0 0.2 0.4 0.6 0.8 0 0.5 1 1.5 2 2.5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V 1.2 VDS = 10 V ID = 1.0 mA 1.1 1 0.9 0.8 0.7 0.6 -50 0 50 100 150 10 VDS = 10 V Pulsed T A = -25°C 25°C 75°C 125°C 1 0.1 0.01 0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 150 Pulsed 100 VGS = 2.5 V 4.0 V 4.5 V 50 0 0.01 0.1 1 ID - Drain Current - A 1 10 ID - Drain Current - A 10 RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 150 ID = 1.0 A Pulsed 100 50 G16627JJ1V1DS G16627JJ1V1DS 0 0 2 4 6 8 VGS - Gate to Source Voltage - V 5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 150 1000 ID = 1.0 A Pulsed Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - m µ PA508TE PA508TE 100 VGS = 2.5 V 4.0 V 4.5 V 50 0 50 100 C iss 100 C oss C rss 10 0.01 0 -50 VGS = 0 V f = 1.0 M H z 150 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 4 VDD = 10 V VGS = 4.0 V RG = 10 t d(off) t d(on) tr tf 1 VDD = 4.0 V 10 V 16 V 2 1 1 10 Pulsed 1 VGS = 0 V 0.1 0.01 0.4 0.6 0.8 0 0.5 1 1.5 2 QG - Gate Change - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A 100 ID = 1.0 A 3 ID - Drain Current - A 1 VF(S-D) - Source to Drain Voltage - V 6 10 0 0.1 10 1 DYNAMIC INPUT CHARACTERISTICS 100 10 0.1 VDS - Drain to Source Voltage - V G16627JJ1V1DS G16627JJ1V1DS 2.5 3 µ PA508TE PA508TE A = 25°C T FORWARD CURRENT vs. FORWARD VOLTAGE REVERSE CURRENT vs. REVERSE VOLTAGE 10 100 Pulsed T A = 125°C P ulsed 1 IR - Reverse Current - mA IF - Forward Current - A 10 T A = 125°C 75°C 25°C -25°C 0.1 0.01 75°C 1 25°C 0.1 0.01 -25°C 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 VF - Forward Voltage - V 0 10 20 30 40 VR - Reverse Voltage - V TERMINAL CAPACITANCE vs. REVERSE VOLTAGE CT - Terminal Capacitance - pF 1000 f = 1.0 MHz 100 10 0.1 1 10 100 VR - Reverse Voltage - V G16627JJ1V1DS G16627JJ1V1DS 7 µ PA508TE PA508TE · 200312 · · · · · OAAV NECNEC M8E02 M8E02.11 NEC 211-86681753 044(435)5111 NEC URL http://www.necel.co.jp/ 044-435-9494 9:0012:00 1:005:00 E-mail info@necel.com NECNEC C03.7T