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PMP5922 Texas Instruments Sync Buck for Intel Atom E6xx Tunnel Creek visit Texas Instruments
PMP5855 Texas Instruments Sync Buck for Intel Atom E6xx Tunnel Creek visit Texas Instruments
PMP5922.8 Texas Instruments Sync Buck for Intel Atom E6xx Tunnel Creek (1.05V @ 100mA) visit Texas Instruments
PMP5855.1 Texas Instruments Sync Buck for Intel Atom E6xx Tunnel Creek (1V @ 5A) visit Texas Instruments
PMP5855.5 Texas Instruments Sync Buck for Intel Atom E6xx Tunnel Creek (1.05V @ 5A) visit Texas Instruments
PMP5855.6 Texas Instruments Sync Buck for Intel Atom E6xx Tunnel Creek (1.8V @ 5A) visit Texas Instruments

tunnel diode GaAs

Catalog Datasheet MFG & Type PDF Document Tags

Emcore solar cell

Abstract: GE "TUNNEL DIODE" , incorporates a monolithically integrated p/n GaAs bypass diode. This cell is called the ATJM. Using the ATJM , GaAs layers on the surface of the ATJ cell. The monolithically integrated GaAs diode protects the cell , , the additional p/n GaAs diode layers are removed from the active surface areas of the cell, except , ATJ with a monolithically integrated diode (ATJM) solar cells for space flight applications. The , . These multi-junction cells are of n/p polarity and are composed of InGaP/(In)GaAs III-V compounds
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Emcore solar cell

Abstract: multi-junction "solar cell" Bandgap Tunnel Diode n+-GaInP2 Window n+-GaAs Emitter p-GaAs Base p-GaInP2 BSF p+-n+ Tunnel Diode n-Ge Buffer n-Ge Substrate Back Contact Figure 1. Schematic of the GaInP2/GaAs tandem cell , PROTON AND ELECTRON RADIATION ANALYSIS OF GaInP2/GaAs SOLAR CELLS P. R. Sharps, C. H. Thang, P. A , data for the dual junction GaInP2/GaAs cell as well as an analysis of the data using the displacement , for Si cells [2], but also applies to GaAs and other III-V based cells [3]. More recently, the
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Ferrite Circulators at 15 ghz

Abstract: medical ultra micro coaxial cable Tuning Varactors, GaAs Hyperabrupt Varactors, and Step Recovery Diodes ­ ­ Planar Back (Tunnel , , PIN diode switches, multi-octave and high frequency coaxial and surface mounted components, filters , , GaAs and PIN switched attenuators used in signal generators and test analyzers. In addition, Aeroflex , , Schottky, Tunnel and SRD/Varactor diodes, T/R front ends, couplers and dividers, time delay units, phase , start-of-the-art GaAs and Silicon wafer fabrication facility, advanced designs and process equipment, and a
Aeroflex / Weinschel
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s- band Waveguide limiter

Abstract: microwave transceiver , PIN diode switches, multi-octave and high frequency coaxial and surface mounted components, filters , , relay switched, GaAs and PIN switched attenuators used in signal generators and test analyzers. In , products for defense markets include PIN, Schottky, Tunnel and SRD/Varactor diodes, T/R front ends , ­ Silicon Tuning Varactors, GaAs Hyperabrupt Varactors, and Step Recovery Diodes ­ Planar Back (Tunnel) Diodes ­ MIS Capacitors (Metal-Insulating Layer-Silicon) ­ ­ Sampling Phase
Aeroflex / Inmet
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GaAs tunnel diode

Abstract: tunnel diode GaAs ; low power, audio frequency D transistor; power, audio frequency E diode; tunnel F , X diode; multiplier, e.g. varactor, step recovery Y diode; rectifying, booster Z This , of such devices, semiconductor chips and Darlington transistors. diode; voltage reference or regulator, transient suppressor diode; with special third letter. FIRST LETTER SERIAL NUMBER The , B silicon or other material with a band gap of 1 to 1.3 eV C gallium arsenide (GaAs) or
Philips Semiconductors
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triple-junction "solar cell"

Abstract: GaAs tunnel diode radiation-hard high-efficiency largearea InGaP/GaAs/Ge triple-junction solar cells. Minimum average conversion , from approximately 26.5% to 28.5%. A monolithic bypass diode option will also be available with the , GaAs Contact Layer Metal Grids High-efficiency multi-junction solar cells have been providing , hardness. AR Coating Window Emitter Base BSF Tunnel Junction Window Emitter Base All of the , watt. BSF Tunnel Junction Currently, triple-junction flight-quality space solar cells produced
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MIL-STD-750E

Abstract: 1N21B transistor (pre-cap) inspection. 2073.1 Internal inspection for die (semiconductor diode). 2074.4 , (delta gate-emitter on voltage method). 3104 Thermal impedance measurements of GaAs MOSFET's (constant , voltage drop, collector to base, diode method). 3141 Thermal response time. 3146.1 Thermal time , transistors. 3476 Commutating diode for safe operating area test procedure for measuring dv/dt during , of a GaAs FET. 3510 1 dB compression point of a GaAs FET. 3570 GaAs FET forward gain (Mag S21).
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DIODE BZW70

Abstract: cqy17 Diode; tunnel Transistor; low power, high frequency O For opto-triacs, after second letter `R' T For , numbering U Transistor; power, switching W Surface acoustic wave device X Y Z Diode; multiplier, e.g. varactor, step recovery Diode; rectifying, booster Diode; voltage reference or regulator, transient suppressor diode; with special third letter. n u m b e r / s p e c ia l t h ir d l e t t e r This type , arsenide (GaAs) or other material with a band gap of 1.3 eV or more The number comprises three figures
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Novel Passivation Ledge Monitor in an InGaP HBT Process

Abstract: AlGaAs resistivity metal-insulator-semiconductor (MIS) tunnel diode at equilibrium, although the insulator, in this case the InGaP, has a bandgap , manufacturing environment. INTRODUCTION InGaP/GaAs heterojunction bipolar transistors (HBT) are widely used , . CONVENTIONAL METHOD The use of Schottky contacts on InGaP/GaAs heterostructures is ubiquitous in the gate , layer adjacent to the InGaP is a highly doped p+ GaAs base instead of the AlGaAs or ndoped GaAs used , Schottky and one heterojunction compared with just a Schottky diode in the common case. Our attempts to
Skyworks Solutions
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GaAs tunnel diode

Abstract: DATASHEET TUNNEL DIODE such as silicon (Si) and gallium arsenide (GaAs) diodes, germanium tunnel diodes, HBT amplifiers , Columbus (DSCC) on the company's family of hard glass switching diode products in accordance with MIL-PRF
Aeroflex Microelectronic Solutions
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1n41481 zener diode

Abstract: GaAs tunnel diode arsenide (GaAs) diodes, germanium tunnel diodes, HBT amplifiers, resistors, inductors, capacitors , switching diode qualifications, along with our previously released hard glass switching and zener diodes,"
Aeroflex Microelectronic Solutions
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GaAs tunnel diode

Abstract: tunnel diode GaAs small signal zener diode qualifications, along with our previously released hard glass switching diodes , /Microwave semiconductor devices and components such as silicon (Si) and gallium arsenide (GaAs) diodes, germanium tunnel diodes, HBT amplifiers, resistors, inductors, capacitors, switches, and integrated devices
Aeroflex Microelectronic Solutions
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BPW50

Abstract: tda1000 E Diode; tunnel EXAMPLES OF BASIC TYPE NUMBERS F Transistor; low power, high frequency , (consumer type) L Transistor; power, high frequency CQY17 GaAs, light-emitting diode (industrial , Basic type number W Surface acoustic wave device Transistor; power, switching X Diode; multiplier, e.g. varactor, step recovery Y Diode; rectifying, booster Z This type designation , , semiconductor chips and Darlington transistors. Diode; voltage reference or regulator, transient suppressor
Philips Semiconductors
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74LS00A BPW50 tda1000 Germanium Diode aa112 BD232 PHILIPS SEMICONDUCTOR BD232 PCF1105WP GMB74LS00A-DC TDA1000P SAC2000

tda1000

Abstract: Germanium Diode aa112 , audio frequency E F Diode; tunnel Transistor; low power, high frequency AA112 ACY32 BD232 CQY17 RPY84 , AF transistor (consumer type) GaAs, light-emitting diode (industrial type) CdS, photo-conductive cell , numbering U Transistor; power, switching W Surface acoustic wave device X Y Z Diode; multiplier, e.g. varactor, step recovery Diode; rectifying, booster Diode; voltage reference or regulator, transient suppressor diode; with special third letter. n u m b e r / s p e c ia l t h ir d l e t t e r This type
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BZW10-15 DIODE BZW70 9v1 zener diode circuits BZY74-C6V3 BPW50-12 PCF-1105

high power pin diode

Abstract: METELICS DETECTOR DIODE semiconductor devices and components such as silicon (Si) and gallium arsenide (GaAs) diodes, germanium tunnel , , CA - Aeroflex / Metelics has announced the release of a suite of surface mount PIN Diode Switch , high power PIN diode SPST switch elements are available in series (SE), shunt (SH), and series shunt
Aeroflex / Metelics
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high power pin diode METELICS DETECTOR DIODE GaAs tunnel diode Gallium Arsenide tunnel diode msat-p25 Metelics

BPW50

Abstract: BZY74-C6V3 C D E F G Diode; signal, low power Diode; variable capacitance Transistor; low power, audio frequency Transistor; power, audio frequency Diode; tunnel Transistor; low power, high frequency Multiple of , ; power, switching Surface acoustic wave device Diode; multiplier, e.g. varactor, step recovery Diode; rectifying, booster Diode; voltage reference or regulator, transient suppressor diode; with special third , gap of 0.6 to 1 eV Silicon or other material with a band gap of 1 to 1.3 eV Gallium arsenide (GaAs) or
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BYT-100 BPW50-9 BZW70 bzw10 BZW70/24 Byt100 BPX10-2A BPW50-6 BZW70-9V1

transistor smd bc rn

Abstract: SMD transistor y11 primarily designed. A. B. C. D. E. F. G. H. L. N. P. Q. R. S. T. U. X. Y. Z. Diode: signal, low power Diode: variable capacitance Transistor: low power, audio frequency Transistor: power, audio frequency Diode: tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode: magnetic sensitive Transistor: power, high frequency Optocoupler , GaAs Components Technical Information 3 3.1 Technical Information Type Designation in
Infineon Technologies
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transistor smd bc rn SMD transistor y11 g21 SMD Transistor SMD Transistor Y12 transistor ic equivalent book SMD transistor BC RN EHA07040 EHA07041

smd transistor A11b

Abstract: transistor book which the device is primarily designed. A. B. C. D. E. F. G. H. L. N. P. Q. R. S. T. U. X. Y. Z. Diode: signal, low power Diode: variable capacitance Transistor: low power, audio frequency Transistor: power, audio frequency Diode: tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode: magnetic sensitive Transistor: power, high frequency Optocoupler , ·aîfinülogies Infineon GaAs Components Technical Information 3 3.1 Technical
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smd transistor A11b transistor book smd diode code 1B2 EHA07W1

tda1000

Abstract: 74LS00 C D E F G Diode; signal, low power Diode; variable capacitance Transistor; low power, audio frequency Transistor; power, audio frequency Diode; tunnel Transistor; low power, high frequency multiple of , Transistor; power, switching Diode; multiplier, e.g. varactor, step recovery Diode; rectifying, booster Diode; voltage reference or regulator, transient suppressor diode; with special third letter. n u m b e r / s p , arsenide (GaAs) or other material with a band gap of 1.3 eV or more Compound materials, e.g. cadmium
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74LS00 20 PIN LEADLESS CHIP CARRIER THICK FILM smd dual diode code 1c

tda1000

Abstract: TDA1000P K/W and power types by R th ¡-mb 2 1 5 K/W. A B C D E F G Diode; signal, low power Diode; variable capacitance Transistor; low power, audio frequency Transistor; power, audio frequency Diode; tunnel Transistor , Transistor; power, switching Diode; multiplier, e.g. varactor, step recovery Diode; rectifying, booster Diode; voltage reference or regulator, transient suppressor diode; with special third letter. n u m b e r / s p , arsenide (GaAs) or other material with a band gap of 1.3 eV or more Compound materials, e.g. cadmium
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PCF1105 Radiation Detector
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