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PMP5855 Texas Instruments Sync Buck for Intel Atom E6xx Tunnel Creek ri Buy
PMP5922 Texas Instruments Sync Buck for Intel Atom E6xx Tunnel Creek ri Buy
PMP5922.1 Texas Instruments Sync Buck for Intel Atom E6xx Tunnel Creek (1.1V @ 3.5A) ri Buy

tunnel diode GaAs

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: , incorporates a monolithically integrated p/n GaAs bypass diode. This cell is called the ATJM. Using the ATJM , GaAs layers on the surface of the ATJ cell. The monolithically integrated GaAs diode protects the cell , , the additional p/n GaAs diode layers are removed from the active surface areas of the cell, except , ATJ with a monolithically integrated diode (ATJM) solar cells for space flight applications. The , . These multi-junction cells are of n/p polarity and are composed of InGaP/(In)GaAs III-V compounds ... Original
datasheet

4 pages,
222.84 Kb

1E14 E400 GaAs tunnel diode optimization of solar energy PROTON solar panel of 10 watt EMCORE CIC small solar panel circuit diagram solar cell ATJ photovoltaic cell tunnel diode GaAs Emcore solar cell solar cells circuit diagram GE "TUNNEL DIODE" triple-junction "solar cell" TEXT
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Abstract: Bandgap Tunnel Diode n+-GaInP2 Window n+-GaAs Emitter p-GaAs Base p-GaInP2 BSF p+-n+ Tunnel Diode n-Ge Buffer n-Ge Substrate Back Contact Figure 1. Schematic of the GaInP2/GaAs tandem cell , PROTON AND ELECTRON RADIATION ANALYSIS OF GaInP2/GaAs SOLAR CELLS P. R. Sharps, C. H. Thang, P. A , data for the dual junction GaInP2/GaAs cell as well as an analysis of the data using the displacement , for Si cells [2], but also applies to GaAs and other III-V based cells [3]. More recently, the ... Original
datasheet

4 pages,
34.16 Kb

tunnel diode GaAs NIEL for solar cell inp GAAS multi-junction solar cell" tunnel diode proton NIEL Emcore solar cell multi-junction "solar cell" GaAs tunnel diode TEXT
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Abstract: Tuning Varactors, GaAs Hyperabrupt Varactors, and Step Recovery Diodes ­ ­ Planar Back (Tunnel , , PIN diode switches, multi-octave and high frequency coaxial and surface mounted components, filters , , GaAs and PIN switched attenuators used in signal generators and test analyzers. In addition, Aeroflex , , Schottky, Tunnel and SRD/Varactor diodes, T/R front ends, couplers and dividers, time delay units, phase , start-of-the-art GaAs and Silicon wafer fabrication facility, advanced designs and process equipment, and a ... Aeroflex / Weinschel
Original
datasheet

20 pages,
1817.49 Kb

GPPO f 9222 l Weinschel attenuator matrix KDI microwave limiter diplexer gsm umts bts KDI RESISTOR diplexer gsm umts 900 GaAs tunnel diode back Tunnel diode Sampling Phase Detectors military resistors catalog gsm multicoupler KDI attenuator kdi mixer SURFACE MOUNT DIODES MIL GRADE MIL-STD-1553 cable connector analog phase shifters chip Aeroflex KDI Resistor medical ultra micro coaxial cable Ferrite Circulators at 15 ghz TEXT
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Abstract: , PIN diode switches, multi-octave and high frequency coaxial and surface mounted components, filters , , relay switched, GaAs and PIN switched attenuators used in signal generators and test analyzers. In , products for defense markets include PIN, Schottky, Tunnel and SRD/Varactor diodes, T/R front ends , ­ Silicon Tuning Varactors, GaAs Hyperabrupt Varactors, and Step Recovery Diodes ­ Planar Back (Tunnel) Diodes ­ MIS Capacitors (Metal-Insulating Layer-Silicon) ­ ­ Sampling Phase ... Aeroflex / Inmet
Original
datasheet

11 pages,
945.78 Kb

aeroflex programmable attenuator 2001 diplexer gsm umts bts diplexers E911 GPPO group delay rf modulators ic gsm multicoupler KDI RESISTOR KDI microwave limiter Weinschel programmable attenuator 2001 kdi switch GSM BTS antenna tunnel diode GaAs Ferrite Circulators at 15 ghz GaAs tunnel diode SURFACE MOUNT DIODES MIL GRADE Aeroflex KDI Resistor microwave transceiver MIL-STD-1553 cable connector s- band Waveguide limiter TEXT
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Abstract: ; low power, audio frequency D transistor; power, audio frequency E diode; tunnel F , X diode; multiplier, e.g. varactor, step recovery Y diode; rectifying, booster Z This , of such devices, semiconductor chips and Darlington transistors. diode; voltage reference or regulator, transient suppressor diode; with special third letter. FIRST LETTER SERIAL NUMBER The , B silicon or other material with a band gap of 1 to 1.3 eV C gallium arsenide (GaAs) or ... Philips Semiconductors
Original
datasheet

1 pages,
4.75 Kb

"photo transistor" electron Detector GERMANIUM phototransistor high power thyristor oscillator tunnel diode oscillator tunnel diode datasheet power varactor radiation detector thyristor regulator Low frequency power transistor transistor power photocoupler Thyristor diode tunnel tunnel diode high frequency DATASHEET TUNNEL DIODE Tunnel diode photo thyristor tunnel diode GaAs GaAs tunnel diode TEXT
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Abstract: radiation-hard high-efficiency largearea InGaP/GaAs/Ge triple-junction solar cells. Minimum average conversion , from approximately 26.5% to 28.5%. A monolithic bypass diode option will also be available with the , GaAs Contact Layer Metal Grids High-efficiency multi-junction solar cells have been providing , hardness. AR Coating Window Emitter Base BSF Tunnel Junction Window Emitter Base All of the , watt. BSF Tunnel Junction Currently, triple-junction flight-quality space solar cells produced ... Original
datasheet

5 pages,
93.77 Kb

ATJ photovoltaic cell E-450 E400 GAAS multi-junction solar cell" GE 923 InGaAsN solar cell 1.5 Watt optimization of solar energy EMCORE CIC ATJ External Quantum Efficiency solar GE "TUNNEL DIODE" multi-junction "solar cell" Emcore solar cell GaAs solar cell optimize 5E14 EMCORE CIC tunnel diode GaAs solar cell GaAs tunnel diode triple-junction "solar cell" TEXT
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Abstract: transistor (pre-cap) inspection. 2073.1 Internal inspection for die (semiconductor diode). 2074.4 , (delta gate-emitter on voltage method). 3104 Thermal impedance measurements of GaAs MOSFET's (constant , voltage drop, collector to base, diode method). 3141 Thermal response time. 3146.1 Thermal time , transistors. 3476 Commutating diode for safe operating area test procedure for measuring dv/dt during , of a GaAs FET. 3510 1 dB compression point of a GaAs FET. 3570 GaAs FET forward gain (Mag S21). ... Original
datasheet

23 pages,
192 Kb

1N23 diode 1N23B 1N25 diode 1N26 1N263 JAN Semiconductor Group igbt IN tt 2076 TRANSISTOR D877 1N263 1N21* Diode Detector Holder GaAs tunnel diode 1N21B diode SAE-ARP-743 TT 2076 MIL-STD-750E rectifier 2037-1 MIL-STD-750E D65019 MIL-STD-750E MIL-PRF-680 MIL-STD-750E diode cc 3053 MIL-STD-750E 1N21B MIL-STD-750E MIL-STD-750E MIL-STD-750E TEXT
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Abstract: Diode; tunnel Transistor; low power, high frequency O For opto-triacs, after second letter `R' T For , numbering U Transistor; power, switching W Surface acoustic wave device X Y Z Diode; multiplier, e.g. varactor, step recovery Diode; rectifying, booster Diode; voltage reference or regulator, transient suppressor diode; with special third letter. n u m b e r / s p e c ia l t h ir d l e t t e r This type , arsenide (GaAs) or other material with a band gap of 1.3 eV or more The number comprises three figures ... OCR Scan
datasheet

2 pages,
101.38 Kb

thyristor smd BYT-100 BZY74-C6V3 AA112 germanium diode smd smd transistor g1 g1 smd transistor BPW50-9 BPW50 Germanium Diode aa112 cqy17 DIODE BZW70 TEXT
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Abstract: metal-insulator-semiconductor (MIS) tunnel diode at equilibrium, although the insulator, in this case the InGaP, has a bandgap , manufacturing environment. INTRODUCTION InGaP/GaAs heterojunction bipolar transistors (HBT) are widely used , . CONVENTIONAL METHOD The use of Schottky contacts on InGaP/GaAs heterostructures is ubiquitous in the gate , layer adjacent to the InGaP is a highly doped p+ GaAs base instead of the AlGaAs or ndoped GaAs used , Schottky and one heterojunction compared with just a Schottky diode in the common case. Our attempts to ... Skyworks Solutions
Original
datasheet

4 pages,
205.85 Kb

AlGaAs resistivity TEXT
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Abstract: such as silicon (Si) and gallium arsenide (GaAs) diodes, germanium tunnel diodes, HBT amplifiers , Columbus (DSCC) on the company's family of hard glass switching diode products in accordance with MIL-PRF ... Aeroflex Microelectronic Solutions
Original
datasheet

2 pages,
53.57 Kb

tunnel diodes 1N6639 1N6640 1N6641 1N6642 1N6643 1N6638 germanium diode MIL-PRF-19500N tunnel diode AEROFLEX tunnel diode GaAs DATASHEET TUNNEL DIODE GaAs tunnel diode TEXT
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Spice Models 29/07/2012 401.5 Kb ZIP icap4pwrliblist.zip
SHAFT LINES HAS DETERMINE IMPORTANT CUTTING UPON MOTORS DIODE INSUFFICIENT RUNS NUMBER DOES SCALED DIODE ROUTING RUNS PROCEDURE NUMBER GREATER SELF BLOCK ABNORMAL 74C906 74C906 DESTRUCTIVE FREQUENCY CONTROLS FEW EXPRESSES GENERATING 2ND SYSTEM DIODE NUMBER SPURIOUS DOES SCALED ABNORMAL PHASE FREQUENCY CORRECT FET R.A POTENTIOMETERS INTEGRATE SIDE DIODE SEPTEMBER RUNS SELF GREATER DEPOSITS DOES RECOVERY PHASE FET UPON DIODE RUNS NUMBER SELF DEGRADE SCALED ACQUIRED FREQUENCY PROPER DIFFICULT INTEGRATING
/datasheets/files/linear/lview3/parts-v1.edb
Linear 08/10/1998 5000.33 Kb EDB parts-v1.edb
SHAFT LINES HAS DETERMINE IMPORTANT CUTTING UPON MOTORS DIODE INSUFFICIENT RUNS NUMBER DOES SCALED DIODE ROUTING RUNS PROCEDURE NUMBER GREATER SELF BLOCK ABNORMAL 74C906 74C906 DESTRUCTIVE FREQUENCY CONTROLS FEW EXPRESSES GENERATING 2ND SYSTEM DIODE NUMBER SPURIOUS DOES SCALED ABNORMAL PHASE FREQUENCY CORRECT FET R.A POTENTIOMETERS INTEGRATE SIDE DIODE SEPTEMBER RUNS SELF GREATER DEPOSITS DOES RECOVERY PHASE FET UPON DIODE RUNS NUMBER SELF DEGRADE SCALED ACQUIRED FREQUENCY PROPER DIFFICULT INTEGRATING
/datasheets/files/linear/lview3/parts.ebd
Linear 08/10/1998 5000.33 Kb EBD parts.ebd
SHAFT LINES HAS DETERMINE IMPORTANT CUTTING UPON MOTORS DIODE INSUFFICIENT RUNS NUMBER DOES SCALED DEMANDS HAS DETERMINE CUTTING RESISTIVE FEATURES COMMAND INTEGRATE SIDE SYSTEM DIODE ROUTING RUNS FEW EXPRESSES GENERATING 2ND SYSTEM DIODE NUMBER SPURIOUS DOES SCALED ABNORMAL PHASE FREQUENCY CORRECT DETERMINE FEATURES FET R.A POTENTIOMETERS INTEGRATE SIDE DIODE SEPTEMBER RUNS SELF GREATER DEPOSITS DOES RELIABILITY COLLECTORS HAS IMPORTANT CUTTING FEATURES COMMAND FET UPON DIODE RUNS NUMBER SELF DEGRADE SCALED
/datasheets/files/linear/lview4/parts.edb
Linear 15/02/2000 7168.02 Kb EDB parts.edb
SHAFT LINES HAS DETERMINE IMPORTANT CUTTING UPON MOTORS DIODE INSUFFICIENT RUNS NUMBER DOES SCALED DIODE ROUTING RUNS PROCEDURE NUMBER GREATER SELF BLOCK ABNORMAL 74C906 74C906 DESTRUCTIVE FREQUENCY CONTROLS FEW EXPRESSES GENERATING 2ND SYSTEM DIODE NUMBER SPURIOUS DOES SCALED ABNORMAL PHASE FREQUENCY CORRECT FET R.A POTENTIOMETERS INTEGRATE SIDE DIODE SEPTEMBER RUNS SELF GREATER DEPOSITS DOES RECOVERY PHASE FET UPON DIODE RUNS NUMBER SELF DEGRADE SCALED ACQUIRED FREQUENCY PROPER DIFFICULT INTEGRATING
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Linear 21/01/1999 5379.43 Kb EDB parts.edb
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Kaleidoscope 22/08/2005 11421.08 Kb TGZ bae65022linux.tgz