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Part : TT104N12KOF Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €73.4136 Price Each : €112.6739
Part : TT104N12KOF-A Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €80.8584 Price Each : €124.10
Part : TT104N12KOF-K Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €80.8584 Price Each : €124.10
Part : TT104N12KOFAHPSA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $87.0435 Price Each : $98.7078
Part : TT104N12KOFHPSA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $79.0292 Price Each : $89.6196
Part : TT104N12KOFKHPSA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $87.0435 Price Each : $98.7078
Part : TT104N12KOF-A Supplier : Infineon Technologies Manufacturer : RS Components Stock : 10 Best Price : £64.07 Price Each : £82.3700
Part : TT104N12KOF-K Supplier : Infineon Technologies Manufacturer : RS Components Stock : 5 Best Price : £72.07 Price Each : £82.3700
Part : TT104N12KOF Supplier : - Manufacturer : basicEparts Stock : 29 Best Price : - Price Each : -
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tt 104 n 12

Catalog Datasheet MFG & Type PDF Document Tags

tt 104 n 12

Abstract: TT104N on- state current rating ITAVM 102 100 TT 104 N/12 2 3 4 5 6 7 8 101 2 3 4 , 14,5 80 92 AK K A 3 1 4 2 VWK February 1996 TT 104 N, TD 104 N, DT 104 , . 0,10 °C/W 140 °C -40.+140 °C -40.+140 °C TT 104 N 160 140 180° 120° 140 , 60 60 40 40 20 0 0 20 40 60 80 100 ITAV [A] TT 104 N/1 20 0 120 , 160 PTAV [W] 20 90° 60° TT 104 N/2 Bild / Fig. 1 Durchlaßverlustleistung je Zweig
Eupec
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tt 104 n 12 TT104N TT 104

TT 46 N 12

Abstract: din 6900 * - M O J TT 61 N TT 92 N TT 104 N TT 46 F AK TD 61 N TD 92 N TD 104 N TD 46 F K K1 A 9 TD 106 N TD 60 F* H3- £ -*3 - AK 4 I DT 61 N DT 92 N DT 104 N DT 46 F AK K K2 A 9 D T106N DT 60 F* J - W G2 £ DD 89 N DD 104 N K KJ AK K A < ? , 31 36 46 56 66 N N N N N N N TT TT TT TT 18 25 32 42 AK o K o3 . 4 _ A , 2 9 TT 60 N TT 75 N TT 95 N AK o TT 93 N TT 105 N ' 's j c 1 TD 93 N TD 105 N AK
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OCR Scan
TT 46 N 12 din 6900 TT60N TT 93 N 08 TT105N DIN 46 244

thyristor TT 46 N 1200

Abstract: thyristor tt 162 n 12 0.1 130 150 1700 14.4 2.6 150 200 F = 1000 0.39 0.1 140 TT 104 N 600 TD 104 N 1200 DT 104 N TT 105 N TD 105 N DT 105 N 600 1200 800 1400 1000 160 1800 , Ivi ma, tV |= Ivi max typ MS 180 °el sin. f100 V A tvi max A V Baseplate TT 18 N TD18N DT18N TT 25 N TD25N DT 25 N TT 31 N TD 31 N DT 31 N TT 36 N TD 36 N DT 36 N TT 46 N TD 46 N DT 46 N TT 56 N TD 56 N DT 56 N TT 60 N TD 60 N DT 60 N TT 61 N TD 61 N DT 61 N TT 6 6 N TD 66 N DT 66 N
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thyristor TT 46 N 1200 thyristor tt 162 n 12 thyristor tt 142 n 12 thyristor TT 31 N 12 thyristor TT 46 N 12 thyristor tt 66 n 16 N2600 N1200 N2400

powerblock tt 45

Abstract: thyristor tt 18 n 800 0,1 130 TP3 TT 104 N TD 104 N DT 104 N 16,2 104/85 0,85 2,15 150 150 F = 1000 0,37 0,1 140 TP3 Baseplate = 25 mm TT 70 N 1600. .2400* 150 1450 10,50 70/85 96/61 TT TD DT 85 N 85 N 85 N 800.1800 180 2000 20,00 106/85 115/78 0,90 2,6 150 150 F = 1000 0,33 , ¡EC 747-6 = V rrm+ 1 oov Baseplate = 20 mm TT TD DT TT TD DT 61 N 61 N 61 N 92 N 92 N 92 N , 1000 0,33 0,08 125 TP4 i 0,35 0,08 125 TP4 : ! TT 106 N TD 106 N D T 106 N
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powerblock tt 45 thyristor tt 18 n 800 powerblock TT 95 N 1200 dt61n powerblock TD 95 N 1200 TP-7F

NT-1/4-0-SP-CS5480

Abstract: . M12205XJ1V0IF00 (1st edition) Date Published January 1997 N Printed in Japan DRAM PROCESS DIE PHOTOGRAPH DIFFERENCES BETWEEN REVISION A AND REVISION L 1 2 3 4 5 6 7 8 9 10 11 12 µPD42S16405L, 4216405L , 12 16 18 19 20 23 24 27 27 28 29 30 32 36 38 39 40 43 44 47 47 48 49 50 52 56 58 59 60 62 63 , . 10.4 Evaluation Data , . 65 65 66 67 68 70 74 76 77 78 80 81 83 83 84 85 86 88 92 94 95 96 99 100 103 103 104 105 106
NEC
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NT-1/4-0-SP-CS5480 PD42S17405L 4217405L PD42S16405 PD42S17405 PD42S16400L 4216400L

powerblock TT 95 N 1200

Abstract: powerblock DD 76 N 1200 0,85 3,40 2,15 2,15 150 150 150 Baseplate = 20 mm TT 61 N TT 92 N TT 104 N , Baseplate = 25 mm TT 70 N TT 106 N 1600 . 2400* 1200 . 1800 150 180 1450 2000 10,5 , ,35 0,33 0,08 0,08 125 140 TP25/75 TP25/75 Baseplate = 30 mm TT 121 N TT 131 N , TP30/75 TP30/75 Baseplate = 34 mm TT 122 N TT 140 N TT 142 N TT 162 N TT 180 N 1600 . , Baseplate = 50 mm TT 150 N TT 170 N TT 210 N TT 215 N TT 250 N TT 251 N TT 285 N TT 330 N 1800
Eupec
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powerblock DD 76 N 1200 tt 25 n powerblock EUPEC TT 105 N 12 EUPEC tt 162 n 16 thyristor tt 250 n 16 powerblock td 162 TP70/76

thyristor TT 46 N

Abstract: TT 105 N 12 2,15 150 150 F= 1000 0,37 0,1 130 51 TD 92 N 104/76 DT 92 N TT 93 N , 95 N DT 95 N TT 104 N 800. 1600 160 1800 16,2 104/85 0,85 2,15 150 150 F= 1000 0,37 0,1 140 51 TD 104N DT 104 N TT 105 N 800.1600 160 , TT 18 N 800. 1600 40 350 0,61 18/85 1,1 16 100 50 F = 1000 1,2 0,2 125 47 TD 18 N 25/60 48 DT 18 N TT 25 N 800. 1600 50 510 1,3 25/85 1,05 11 100 60 F= 1000 0,92 0,2 125
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thyristor TT 46 N TT 105 N 12 thyristor TT 430 N 22 TT 46 N 800 thyristor tt 18 f 1000 thyristor TT 36 N

a1t 75

Abstract: 1F 10pin /CAS /WE CKE DQM mk / X Y 7v 1â'"tRRD- 7" JL n tt tRCD- lY L I tRCD- 1 tRCD- xz , 14 15 16 17 CLK /CS /RAS /CAS /WE CKE DQM AO-9 \7U HRRD* «là Y t^X: tt n tt 7T tt , (REGE="L") 10 11 12 13 14 15 16 17 CLK /CS /RAS /CAS /WE CKE DQM 1 / \ /TT \A7U t 1 , . MH32S72DBFA -7,-8 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM DESCRIPTION The , . MH32S72DBFA -7,-8 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM PIN NO. PIN NAME
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MH32S72DBFA-7 MH32S72DBFA-8 MIT-DS-348-0 a1t 75 1F 10pin 104-BIT 100MH 128MB JEP-108E

B2HKF

Abstract: thyristor TT 430 N 22 DT 75 N TT 92 N 800.1600 160 1800 16,2 TD 92 N 92/85 104/76 DT 92 N TT 93 N , 85/85 150 F = 1000 F = 1000 0,33 0,08 125 TD 95 N DT 95 N TT 104 N TD 104 N DT 104 N TT 105 N TD 105 N DT 105 N Baseplate = 25 mm TT 70 N TT 85 N TD 85 N DT 85 N , per arm per arm Single phase diode bridges DD B2U 15 N 800.1600 12 480 1150 , 60/85 1,05 8,0 1,31) 0,2 125 1) Three phase bridges, fully controlled n TT B6C
Eupec
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B2HKF TT 56 N TD75N ac switches isoPACK thyristor tt 121 thyristor TT 430

5N16

Abstract: EUPEC tt 104 EUPF/; bl£ ] ) 34032*17 GOOlDÃb ITfl â  U P E C m TT 104 N, TD 104 N, DT104 N , 200 M 0 TT 104 N 2 I TAV [ * ] - T T 9 2 N1 o 120 T TW .N I. 160 ^ , ambient RT A hC 67 EUPEC blE D 3403ET7 OGOlOaa T7D *U P E C TT 104 N,TD 104 N, DT 104 N ,   UPEC 104 N ,TD 104 N, DT 104 N i 20 40 60 80 1 00 120 Bild/Fig. 1 , RG7 H U P E C T T 104 N,TD 104 N, DT104 N Bild/Fig. 13 Zündbereich und Spitzensteuerleistung
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5N16 EUPEC tt 104

473 5.5v

Abstract: MCP100_101 10 12 14 16 18 20 IOL mA 10 0 -40 VDD = 2.5V 500 VDD = 5.5V 20 VTRIP- 100 VOL-IOL 2-6 -20 0 20 40 60 80 100 1.3 °C 1.2 IDD , 100 0 TA = +25°C 0 2-8 2 4 6 IOH mA 8 10 VDD - VOH-IOH 1.08 1.06 1.04 , XXNN RKNN SOT23 3 SOT23 4 XXNN XX QJ QK MCP100T-270I/TT RJ MCP100T-270I/TT MCP100T-300I/TT RK MCP101T-300I/TT QL MCP100T-315I/TT RL MCP101T
Microchip Technology
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MCP100 MCP101 DS11187F MCP10X-270 MCP101-450 473 5.5v MCP100_101 Microchip Technology TO-92 to92d MCP100/101 MCP10X-300

powerblock TT 95 N 1200

Abstract: powerblock TD 95 N 1200 Baseplate = 20 mm TT 61 N TT 92 N TT 104 N VDRM VRRM V VDSM = VDRM VRSM = VRRM + 100 V 1200 . 1600 1000 . 1600 1000 . 1400 Baseplate = 25 mm TT 70 N TT 106 N 1600 . 2400 , Baseplate = 30 mm TT 121 N TT 131 N 1200 . 2000* 1200 . 1600 200 220 2350 3200 27,6 , ,23 0,23 0,06 0,06 125 125 TP30/70 TP30/70 Baseplate = 34 mm TT 122 N TT 140 N TT 142 N TT 162 N TT 180 N 1600 . 2200 1600 . 2200 1200 . 1600 1200 . 1600 1200 .
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powerblock TT 131 N 1200 din IEC 747 powerblock TT 60 N 1200 powerblock tt 60 N powerblock TT 106 N 1600 powerblock TT 106 N 1200 TZ630N TZ530N TZ800N TZ740N TT430N TT400N

TF340M

Abstract: TF620M - IO - « * SE 33 & tt S Vrsm Vrrm Itcav) Itsm di/dt pgm Pgcav) Vgrm , 110 TF620M jJ. > - A- » / 200 e 0 0 on s n n sn s n 9 0 125 -40â'"125 2. 0 125 TF640M ^y>ry 400 6 5 88 80 5. 0 ù. 50 5. 0 2.0 125 -40 â'"125 2. 0 125 SC10C-100 Htt«« 1100 1000 10 0 104 , 1000 10 0 104 180 165. 00 100 25 1/2 VDRM 10. 0 1. 00 5.0 3. 0 125 â'"3 0 â'"125 3. 0 125 SC10C-120 Htt*« 1300 1200 10 0 104 180 165. 00 100 25 1/2 VDRM 10. 0 1 00 5. 0 3. 0 125 -30 â'" 125 3. 0 125
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TF320M-A TF340M TF340M-A TF340M-B SC10C-40 SC16C120 SC20C120 SC20C-80 SC16C-120 TF320M

TLSG126

Abstract: VRPG5614X -30 â'" 85 104 70 570 12 20 2.1 20 30 4 VRPG4607K 70 630 20 2.1 20 30 - 30 â'" 85 104 , 30 AABG4607K fe'S 70 605 20 2.2 20 30 -30-85 104 70 ?n ?â  1 20 30 TLSG116 * s , « ° S».\ O â'" 166 â'" 90 â  /MMB »6 91 93 94 rn «/»/Hua »ft 95 n/u/^tt* »ft 96 , VRPG3312X íifj 60 630 20 2.0 20 30 -30-85 94 ¿3, -fr.'feîc 60 560 12 20 2.1 20 30 , â Fi s ii r. L. * W.% â  ftm'-JWS : 7"â'ž = 25'C: M-K « n ftli.5 ftRtt Ir mA1 IV
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VRBG5614S VRPG5614X VRPG5645X VRBG5645X TLSG205 TLSG208 TLSG126 TLSG264 TLYG116 YRPY5614S YRPY5614X RBG5614X YRPY5645X

6MB150L-120

Abstract: 6MB175L-060 ) (lus) (A) ! Ums) (A) i (A) (an (W) (°C) (°C) vâ'ž. m) (V) # tt (Tc=25°C) InA) Va, 1 (mA , ¡i n i _ n R n 400 150 I -40-125 20 100 3.5 - 235 - x; â'¢ Z1U9 9W-!*- -K mm , 1 M6 0 4 6MBI151-060 2700 10 0 0.6 0.8 1.0 1.5 82 15 600 2.5 15 350 15 -10 50 1.04 2.01 F 6 2 M6 0 7 ULSSSf 6MB115F-120 2700 10 0 0.6 0.8 0.5 1.5 82 15 600 2.5 15 350 15 -10 50 1.04 2.01 F 6 2 M 6 0 , . 6 ' 0. 8 1.0 1.5 82 30 300 2.5 30 300 30 -10 100 1.04 2.01 F 6 2 M6 0 7 6MB130F-060 2850 10 0 0.6
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6MB150L-120 6MB175L-060 6mb175 6MB 125 S-1 2 0 l 6MB150L 6mb150 E60-U M-10A2A M-10A2B M-11A2A M-12A6A M-12B6A

C04 SOT23

Abstract: MCP1203 2-6 8 10 12 14 16 18 20 IOLmA VOL-IOL °C 1.3 2-4 IDD- 1.2 IOL* 1.1 , 4 XXNN XX SJ PK MCP130T-300I/TT MCP120T-315I/TT PL MCP130T-315I/TT SM MCP120T-450I/TT PM MCP130T-450I/TT SN MCP120T-460I/TT PN MCP130T-460I/TT SO MCP120T-475I/TT PO MCP130T-475I/TT SP * MCP120T-300I/TT SL PJ SK MCP120T-270I/TT MCP120T-485I/TT PP MCP130T-485I/TT XX.X YY WW NNN
Microchip Technology
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MCP130 MCP120 C04 SOT23 MCP1203 MCP130T ds11184 MCP120/130 DS11184D MCP1X0-270 MCP1X0-300
Abstract: 12.0 H n 1 4 .0 rt // >/ n n 20.0 /; tt tt 2 3 .0 2 4 .0 .1 .12 tt tt .1 5 .1 8 tt 2 8 .0 .22 £ fè f:E tt n n .0 2 7 .0 3 3 .0 3 9 .04 , 22.0 2 8 .0 n n tt 12 .5 2 1 .5 20 .5 21 .5 ft tt tt » 20.0 21.0 21 , ^ p 0p i ; * 9 à t o W tt l i H 1 1o This s e rie s is re c o m m e n d e d fo r a p p , ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) tt tt ft tt tt tt tt tt ft ft tt tt Ãf n n tt tt -
OCR Scan
600VDC
Abstract: Terminator R2 R1 1 2 3 4 n General Note TT electronics reserves the right to make changes , units per box. 12,000 units per carton General Note TT electronics reserves the right to make , -55°C to +150°C General Note TT electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT electronics' own data and is , © TT electronics plc 08.12 MODEL L SERIES L Series Mechanical Lead Finish Substrate Material TT Electronics
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MIL-STD-202 UL-94V-O MIL-R-83401 MIL-STD-105
Abstract: R2 R1 1 2 3 4 n General Note TT Electronics reserves the right to make changes in , -55°C to +150°C Specifications subject to change without notice. General Note TT Electronics , is subject to TT Electronicsâ'™ own data and is considered accurate at time of going to print. www.ttelectronicsresistors.com © TT Electronics plc 07.14 SIL Resistor Network Make Possible L Series Mechanical , 104 82 820 3.3K 332 120K 124 100 101 3.9K 392 150K 154 120 TT Electronics
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2011/65/EU
Abstract: Terminator R2 R1 1 2 3 4 n General Note TT electronics reserves the right to make changes , units per box. 12,000 units per carton General Note TT electronics reserves the right to make , -55°C to +150°C General Note TT electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT electronics' own data and is , © TT electronics plc 03.12 MODEL L SERIES L Series Mechanical Lead Finish Substrate Material TT Electronics
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