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LTM4600DCM#PBF Linear Technology IC DC/DC UMODULE 10A 104-LGA visit Linear Technology - Now Part of Analog Devices
LTM4600IV#2DHPBF Linear Technology LTM4600 - 10A High Efficiency DC/DC µModule; Package: LGA; Pins: 104; Temperature: Industrial visit Linear Technology - Now Part of Analog Devices
LTM4600IV#PBF Linear Technology LTM4600 - 10A High Efficiency DC/DC µModule (Power Module); Package: LGA; Pins: 104; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices
LTM4600HVMPV#PBF Linear Technology LTM4600HV - 10A, 28VIN High Efficiency DC/DC µModule (Power Module); Package: LGA; Pins: 104; Temperature Range: -55°C to 125°C visit Linear Technology - Now Part of Analog Devices
LTM4602EV#PBF Linear Technology LTM4602 - 6A High Efficiency DC/DC µModule (Power Module); Package: LGA; Pins: 104; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices

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Part : TT104N12KOF Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €73.4136 Price Each : €112.6739
Part : TT104N12KOF-A Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €80.8584 Price Each : €124.10
Part : TT104N12KOF-K Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €80.8584 Price Each : €124.10
Part : TT104N12KOF-A Supplier : Infineon Technologies Manufacturer : RS Components Stock : 16 Best Price : £64.50 Price Each : £82.9200
Part : TT104N12KOF-K Supplier : Infineon Technologies Manufacturer : RS Components Stock : 8 Best Price : £72.3500 Price Each : £82.6900
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tt+104+n+12

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: on- state current rating ITAVM 102 100 TT 104 N/12 2 3 4 5 6 7 8 101 2 3 4 , 104 N screwing depth max. 8,5 plug A 2,8 x 0,8 for M5 68 4 2 3 1 15,5 20 20 14,5 80 92 AK K A 3 1 4 2 VWK February 1996 TT 104 N, TD 104 N, DT 104 , . 0,10 °C/W 140 °C -40.+140 °C -40.+140 °C TT 104 N 160 140 180° 120° 140 , 60 60 40 40 20 0 0 20 40 60 80 100 ITAV [A] TT 104 N/1 20 0 120 Eupec
Original
tt 104 n 12 TT104N TT 104
Abstract: * - M O J TT 61 N TT 92 N TT 104 N TT 46 F AK TD 61 N TD 92 N TD 104 N TD 46 F K K1 A 9 TD 106 N TD 60 F* H3- £ -*3 - AK 4 I DT 61 N DT 92 N DT 104 N DT 46 F AK K K2 A 9 D T106N DT 60 F* J - W G2 £ DD 89 N DD 104 N K KJ AK K A < ? DD 106 N K) ND 104 N Kl -*6 - *) Not for new design ') Pan-head screw with captive lock , 103 5.1 H A p"~ 9,15- ' i n g B . C 1500/1000 104 105 zr i I !I -U -
OCR Scan
TT 46 N 12 din 6900 TT60N TT 93 N 08 DIN 46 244 TT105N
Abstract: 0.1 130 150 1700 14.4 2.6 150 200 F = 1000 0.39 0.1 140 TT 104 N 600 TD 104 N 1200 DT 104 N TT 105 N TD 105 N DT 105 N 600 1200 800 1400 1000 160 1800 , Ivi ma, tV |= Ivi max typ MS 180 °el sin. f100 V A tvi max A V Baseplate TT 18 N TD18N DT18N TT 25 N TD25N DT 25 N TT 31 N TD 31 N DT 31 N TT 36 N TD 36 N DT 36 N TT 46 N TD 46 N DT 46 N TT 56 N TD 56 N DT 56 N TT 60 N TD 60 N DT 60 N TT 61 N TD 61 N DT 61 N TT 6 6 N TD 66 N DT 66 N -
OCR Scan
thyristor TT 46 N 1200 thyristor tt 162 n 12 thyristor tt 142 n 12 thyristor TT 31 N 12 thyristor TT 46 N 12 TT 80 N 1200 N2600 N1200 N2400
Abstract: 0,52 0,16 125 TP3 16,2 92/85 104/76 0,85 2,15 150 150 F = 1000 0,37 0,1 130 TP3 TT 104 N TD 104 N DT 104 N 16,2 104/85 0,85 2,15 150 150 F = 1000 0,37 0,1 140 TP3 Baseplate = 25 mm TT 70 N 1600. .2400* 150 1450 10,50 70/85 96/61 TT TD DT 85 N 85 N 85 N 800.1800 180 2000 20,00 106/85 115/78 0,90 2,6 150 150 F = 1000 0,33 , ¡EC 747-6 = V rrm+ 1 oov Baseplate = 20 mm TT TD DT TT TD DT 61 N 61 N 61 N 92 N 92 N 92 N -
OCR Scan
powerblock tt 45 powerblock TT 95 N 1200 thyristor tt 18 n 800 DT46F tt200f tt 92
Abstract: . M12205XJ1V0IF00 (1st edition) Date Published January 1997 N Printed in Japan DRAM PROCESS DIE PHOTOGRAPH DIFFERENCES BETWEEN REVISION A AND REVISION L 1 2 3 4 5 6 7 8 9 10 11 12 uPD42S16405L, 4216405L , 12 16 18 19 20 23 24 27 27 28 29 30 32 36 38 39 40 43 44 47 47 48 49 50 52 56 58 59 60 62 63 , . 10.4 Evaluation Data , . 65 65 66 67 68 70 74 76 77 78 80 81 83 83 84 85 86 88 92 94 95 96 99 100 103 103 104 105 106 NEC
Original
NT-1/4-0-SP-CS5480 PD42S16405L PD42S17405L 4217405L PD42S16405 PD42S17405 PD42S16400L
Abstract: 747 - 6 120 160 160 1400 1800 1800 9,8 16,2 16,2 60/85 92/85 104/85 0,80 0,85 0,85 3,40 2,15 2,15 150 150 150 Baseplate = 20 mm TT 61 N TT 92 N TT 104 N , Outline / page Baseplate = 20 mm DD 89 N ND 89 N DD 98 N DD 104 N ND 104 N 1200 . 1800 , Baseplate = 25 mm TT 70 N TT 106 N 1600 . 2400* 1200 . 1800 150 180 1450 2000 10,5 , ,35 0,33 0,08 0,08 125 140 TP25/75 TP25/75 Baseplate = 30 mm TT 121 N TT 131 N Eupec
Original
powerblock DD 76 N 1200 tt 25 n powerblock EUPEC TT 105 N 12 EUPEC tt 162 n 16 thyristor tt 250 n 16 powerblock tt 60 N TP30/75 TP70/76
Abstract: 2,15 150 150 F= 1000 0,37 0,1 130 51 TD 92 N 104/76 DT 92 N TT 93 N , 95 N DT 95 N TT 104 N 800. 1600 160 1800 16,2 104/85 0,85 2,15 150 150 F= 1000 0,37 0,1 140 51 TD 104N DT 104 N TT 105 N 800.1600 160 , TT 18 N 800. 1600 40 350 0,61 18/85 1,1 16 100 50 F = 1000 1,2 0,2 125 47 TD 18 N 25/60 48 DT 18 N TT 25 N 800. 1600 50 510 1,3 25/85 1,05 11 100 60 F= 1000 0,92 0,2 125 -
OCR Scan
thyristor TT 46 N TT 105 N 12 TT 46 N 800 thyristor TT 430 N 22 thyristor tt 66 n 16 thyristor TT 36 N
Abstract: . MH32S72DBFA -7,-8 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM DESCRIPTION The , . MH32S72DBFA -7,-8 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM PIN NO. PIN NAME , 93 DQ38 135 NC 10 DQ7 52 CR? 94 DQ39 136 CR6 11 DQ8 53 CB3 95 DQ40 137 CB7 12 VSS 54 VSS 96 VSS , 144 DQ52 19 DQ14 61 NC 103 DQ46 145 NC 20 DQ15 62 NC 104 DQ47 146 NC 21 CBO 63 NC 105 CB4 147 REGE , without notice. MITSUBISHI LSis MH32S72DBFA -7,-8 2,415,919,104-BIT ( 33,554,432-WORD BY 72 -
OCR Scan
MH32S72DBFA-7 MH32S72DBFA-8 MIT-DS-348-0 a1t 75 1F 10pin 104-BIT 100MH 128MB JEP-108E
Abstract: per arm per arm Single phase diode bridges DD B2U 15 N 800.1600 12 480 1150 , 140 2400 2050 28,80 21,00 85/100 89/ 96 89/100 90/100 DD 98 N DD 104 N ND 104 N DD 105 N 2000.2500 800.1800 160 160 2000 2500 20,00 31,25 98/100 104/100 0,82 , DT 75 N TT 92 N 800.1600 160 1800 16,2 TD 92 N 92/85 104/76 DT 92 N TT 93 N , 85/85 150 F = 1000 F = 1000 0,33 0,08 125 TD 95 N DT 95 N TT 104 N TD 104 N DT Eupec
Original
B2HKF TT 56 N TD75N TT 95 N 12 8TD66 thyristor tt 500 n 16
Abstract: EUPF/; bl£ ] ) 34032*17 GOOlDÃb ITfl â  U P E C m TT 104 N, TD 104 N, DT104 N ,   UPEC 104 N ,TD 104 N, DT 104 N i 20 40 60 80 1 00 120 Bild/Fig. 1 , 200 M 0 TT 104 N 2 I TAV [ * ] - T T 9 2 N1 o 120 T TW .N I. 160 ^ , ambient RT A hC 67 EUPEC blE D 3403ET7 OGOlOaa T7D *U P E C TT 104 N,TD 104 N, DT 104 N , RG7 H U P E C T T 104 N,TD 104 N, DT104 N Bild/Fig. 13 Zündbereich und Spitzensteuerleistung -
OCR Scan
5N16 EUPEC tt 104
Abstract: 10 12 14 16 18 20 IOL mA 10 0 -40 VDD = 2.5V 500 VDD = 5.5V 20 VTRIP- 100 VOL-IOL 2-6 -20 0 20 40 60 80 100 1.3 °C 1.2 IDD , 100 0 TA = +25°C 0 2-8 2 4 6 IOH mA 8 10 VDD - VOH-IOH 1.08 1.06 1.04 , n 1 L 1 2 3 B p c A R n p * 3 , p1 n D p 1 c A § * § A2 A1 L Microchip Technology
Original
MCP100 MCP101 DS11187F MCP10X-270 MCP101-450 473 5.5v MCP100_101 Microchip Technology TO-92 MCP10X MCP100/101 MCP10X-300
Abstract: 10.4 Hz tid inter-digit pause 828 840 844 ' ms tb break time 66 67 68 ms tm make time 32 33 34 ms KEYBOARD DTMF Ml M2 PD1DTMF r^T 1_TT DP V FLO â'" »e I n n «e I I te I L te , Pulse dialling fdp dialling pulse frequency 9.8 10 10.4 Hz tid inter-digit pause 828 840 844 ' ms , '" »e I n n «e I I te I L te -^MMV -VWWW- «h Iâ'" â  - - - = floating , dialling fdp dialling pulse frequency 9.8 10 10.4 Hz tid inter-digit pause 828 840 844 ' ms tb break -
OCR Scan
PCD3310 keyboard to DTMF S028 sot136a
Abstract: 16,2 16,2 60/85 92/85 104/85 0,80 0,85 0,85 3,40 2,15 2,15 150 150 150 Baseplate = 20 mm TT 61 N TT 92 N TT 104 N VDRM VRRM V VDSM = VDRM VRSM = VRRM + 100 V 1200 . 1600 1000 . 1600 1000 . 1400 Baseplate = 25 mm TT 70 N TT 106 N 1600 . 2400 , = 20 mm DD 89 N ND 89 N DD 98 N DD 104 N ND 104 N 1000 . 1800 1000 . 1800 2000 . , Baseplate = 30 mm TT 121 N TT 131 N 1200 . 2000* 1200 . 1600 200 220 2350 3200 27,6 -
Original
powerblock TT 131 N 1200 powerblock TD 95 N 1200 din IEC 747 powerblock TT 60 N 1200 powerblock TT 106 N 1600 powerblock TT 106 N 1200 TZ630N TZ530N TZ800N TZ740N TT430N TT400N
Abstract: 110 TF620M jJ. > - A- » / 200 e 0 0 on s n n sn s n 9 0 125 -40â'"125 2. 0 125 TF640M ^y>ry 400 6 5 88 80 5. 0 ù. 50 5. 0 2.0 125 -40 â'"125 2. 0 125 SC10C-100 Htt«« 1100 1000 10 0 104 , 1000 10 0 104 180 165. 00 100 25 1/2 VDRM 10. 0 1. 00 5.0 3. 0 125 â'"3 0 â'"125 3. 0 125 SC10C-120 Htt*« 1300 1200 10 0 104 180 165. 00 100 25 1/2 VDRM 10. 0 1 00 5. 0 3. 0 125 -30 â'" 125 3. 0 125 SC10C-120(D) H a«« 1300 1200 10 0 104 180 165. 00 100 25 1/2 VDRM 10. 0 1. 00 5. 0 3. 0 125 -30 â -
OCR Scan
TF320M TF320M-A TF340M TF340M-A SC10C-40 SC16C120 SC20C120 SC16C-120 SC20C-80 TF340M-B
Abstract: TD 92 N DT 92 N 600 800 1000 1200 1400 1600 160 1800 16200 104/76 92/85 0,85 2,15 150 150 F = 1000 0 , 200 F = 1000 0,39 0,1 140 47 A TT 104 N TD 104 N DT 104 N 600 800 1000 1200 1400 160 1800 16200 104 ,   TT 60 N TD 60 N DT 60 N 600 800 1000 1200 1400 1600 120 1400 9800 76/68 60/85 0,8 3,4 150 120 F = 1000 0,52 0,16 125 47 â² TT 61 N TD 61 N DT 61 N 600 800 1000 1200 1400 1600 120 1400 9800 76/68 60/85 0,8 3,4 150 120 F = 1000 0,52 0,16 125 48 â  TT 75 N TD 75 N DT 75 N 600 800 1000 1200 1400 150 -
OCR Scan
thyristor tt 142 n EUPEC tt 250 n EUPEC tt 95 n thyristor TT 95 N 1200 thyristor tt 162 n EUPEC tt 142 n 16 34G32 00D0115
Abstract: 16200 104/76 92/85 0,85 2,15 150 150 F = 1000 0,37 0,1 130 48 TT 95 N TD 95 , 200 F = 1000 0,39 0,1 140 47 TT 104 N TD 104 N DT 104 N 600 1200 800 1400 , n. , . . . . Phase control thyristor modules Type V It r m s m drm V , compression bonding TT 60 N TD 60 N DT 60 N 600 1200 800 1400 1000 1600 120 1400 9800 76/68 60/85 0,8 3,4 150 120 F = 1000 0,52 0,16 125 47 TT 61 N TD 61 N -
OCR Scan
Abstract: -30 â'" 85 104 70 570 12 20 2.1 20 30 4 VRPG4607K 70 630 20 2.1 20 30 - 30 â'" 85 104 , 30 AABG4607K fe'S 70 605 20 2.2 20 30 -30-85 104 70 ?n ?â  1 20 30 TLSG116 * s , VRPG3312X íifj 60 630 20 2.0 20 30 -30-85 94 ¿3, -fr.'feîc 60 560 12 20 2.1 20 30 , â Fi s ii r. L. * W.% â  ftm'-JWS : 7"â'ž = 25'C: M-K « n ftli.5 ftRtt Ir mA1 IV , 4 â'" 30â'"85 68 + - "7-[.EU. 2.5x3 90 570 12 20 2.1 20 30 VRPG5614S m. 25 630 30 20 20 -
OCR Scan
VRBG5614S VRPG5614X VRPG5645X VRBG5645X TLSG205 TLSG208 TLSG126 TLSG264 TLYG116 YRPY5614S YRPY5614X RBG5614X YRPY5645X
Abstract: 140 47 TT 104 N TD 104 N DT 104 N 600 800 1000 1200 1400 160 1800 16200 104/85 0,85 2,15 150 150 F = , compression bonding TT 60 N TD 60 N DT 60 N 600 800 1000 1200 1400 1600 120 1400 9800 76/68 60/85 0,8 3,4 150 120 F = 1000 0,52 0,16 125 47 TT 61 N TD 61 N DT 61 N 600 800 1000 1200 1400 1600 120 1400 9800 76/68 60/85 0,8 3,4 150 120 F = 1000 0,52 0,16 125 48 TT 75 N TD 75 N DT 75 N 600 800 1000 1200 1400 150 1700 14400 95/70 75/85 0,85 2,6 150 180 F = 1000 0,39 0,1 125 47 TT 92 N TD 92 N DT 92 N -
OCR Scan
thyristor t 250 n 1200 TT75N EUPEC TT 60 f thyristor tt 92 n 1200 tt 162 n 1200 DT250N DT142 DT162 DT170
Abstract: 125 50 150 150 1150 1700 1 0,85 4,5 2,6 100 150 300 180 75 N 75 N 75 N 92 N 92 N 92 N 95 N 95 N 95 N 104 N 104 N 104 N 106 N 106 N 106 N 121 N 121 N 121 N 122 N 131 131 131 142 142 142 150 150 150 162 162 162 170 170 170 210 210 210 215 N N N N N N N N N N N N N N N N N N N C , TD DT A TT 60 60 60 61 61 61 70 N N N N N N N 600 1200 600 1200 1600 2200 600 1200 600 1200 600 1200 , 9800 76/68 60/85 76/68 60/85 96/57 70/85 95/70 75/85 104/76 92/85 95/85 0,8 3,4 150 120 F = 1000 0,52 0 -
OCR Scan
t 250 n 1200 thyristor TD 45 N 1200 thyristor TT 430 N thyristor TT 45 N 1200
Abstract: compression bonding TT 60 N TD60N DT 60 N A T T 61 N TD 61 N DT 61 N TT 75 N TD 75 N DT 75 N TT 86 N TD 86 N DT 86 N A T T 92 N TD 92 N DT 92 N TT 95 N TD 95 N DT 95 N A TT 104 N TD 104 N DT 104 N TT 106 N TD 106 N DT 106 N TT 121 N TD 121 N DT 121 N TT 131 N TD 131 N DT 131 N TT 142 N TD 142 N DT 142 N TT 150 N TT 162 N TD 162 N DT 162 N TT 170 N TD 170 N DT 170 N TT 210 N TD 210 N DT 210 N TT 250 N TD 250 N DT 250 N TT 251 N TD 251 N DT 251 N TT 265 N TD 265 N DT 265 N à TZ 425 N 600 800 1000 1200 1400 -
OCR Scan
thyristor td 162 n tt 162 n 16 thyristor tt 95 thyristor tt 61 N 1200 dt61n td142n DDDD11S
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