NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Activation Energy Acceleration Factor3 Failure Rate4 1000 0 N/A N/A 0 PPM 181 , where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV , CY2037A CY2037A Wafer L28-TSMC L28-TSMC Technology in TSMC-2A, Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA , , TSMC-2A Device: CY5037AWAF/CY2037-2WAF CY5037AWAF/CY2037-2WAF QTP# 001103, V. 2.0 July, 2000 Page 2 of 6 PRODUCT , , L28 Technology to TSMC-2A,Taiwan Marketing Part #: CY2037AWAF CY2037AWAF / CY2037-2WAF CY2037-2WAF Device Description ... | Original |
6 pages, |
tsmc Ea CY5037 CY2037AWAF CY2037-2WAF tsmc Activation Energy tsmc cmos tsmc design rule MIL-STD-883 Method 3015.7 L28-TSMC CY2037A CY2037A abstract |
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| Abstract: Hours # Fails Activation Energy Acceleration Factor4 Failure Rate5 1051 0 N/A , = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = , Cost Three-PLL Clock Generator CY2081SC/CY2081SL CY2081SC/CY2081SL TSMC-2A, Taiwan CYPRESS TECHNICAL CONTACT FOR , : CY2081SC/CY2081SL CY2081SC/CY2081SL L28-TSMC L28-TSMC Technology, TSMC-2A QTP# 001205, V. 1.2 July, 2000 Page 2 of 6 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: To qualify CY2081SC/CY2081SL CY2081SC/CY2081SL in TSMC fab 2A ... | Original |
6 pages, |
tsmc L28-TSMC tsmc cmos CY2081SC/CY2081SL CY2081SC/CY2081SL abstract |
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| Abstract: Long Term Failure Rate Device Tested/ Device Hours # Fails Activation Energy , CY5037A CY5037A Wafer L28-TSMC L28-TSMC Technology in TSMC-2A, Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA , TSMC-2A Device: CY5037A CY5037A Package: 20 pin SOIC QTP# 000402, V. 1.1 July, 2000 Page 2 of 6 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: To qualify CY5037A CY5037A, L28 Technology to TSMC-2A,Taiwan , CMOS, Single Poly, Double Metal /0.65 um SiO2 / 125 A TSMC-2A, Taiwan TSMC-2A /L28-TSMC /L28-TSMC Cypress ... | Original |
6 pages, |
tsmc Ea L28-TSMC tsmc cmos 000402VERSION CY5037A 000402VERSION abstract |
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| Abstract: Long Term Failure Rate 1 2 3 Device Tested/ Device Hours # Fails Activation Energy , the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy , L28-TSMC L28-TSMC Technology in TSMC-2A, Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408) 432-7069 Cypress Semiconductor L28-TSMC L28-TSMC Technology in TSMC-2A Device: CY2280 CY2280 , Name/Location of Die Fab (prime) Facility: TSMC-2A, Taiwan Die Fab Line ID/Wafer Process ID ... | Original |
5 pages, |
L28-TSMC L28-TSMC abstract |
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| Abstract: Temperature at Stress (°K) Ea = Activation Energy (e.g. 0.7 ev) The activation energy of the failure mechanism is derived from either internal studies or industry accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms or their activation energies are unknown. All , : TSMC 0.25um, Mixed signal, Embedded flash, General Purpose, Double poly Quad metal, 2.5V/3.3V SiO/SiN ... | Original |
4 pages, |
TSMC Flash TSMC 0.25Um failure test data 26803 JESD22-A114 JESD78A 71M6113 71M6113 abstract |
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| Abstract: Temperature at Stress (°K) Ea = Activation Energy (e.g. 0.7 ev) The activation energy of the failure mechanism is derived from either internal studies or industry accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms or their activation energies are unknown. All , : TSMC 0.25um, Mixed signal, Embedded flash, General Purpose, Double poly Quad metal, 2.5V/3.3V SiO/SiN ... | Original |
4 pages, |
TSMC 0.25Um JESD22-A114 Activation Energy 71M6545 71M6545 abstract |
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| Abstract: Temperature at Stress (°K) Ea = Activation Energy (e.g. 0.7 ev) The activation energy of the failure mechanism is derived from either internal studies or industry accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms or their activation energies are unknown. All , : TSMC 0.25um, Mixed signal, Embedded flash, General Purpose, Double poly Quad metal, 2.5V/3.3V SiO/SiN ... | Original |
4 pages, |
71M6103 71M6103 abstract |
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| Abstract: Temperature at Stress (°K) Ea = Activation Energy (e.g. 0.7 ev) The activation energy of the failure mechanism is derived from either internal studies or industry accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms or their activation energies are unknown. All , : TSMC 0.25um, Mixed signal, Embedded flash, General Purpose, Double poly Quad metal, 2.5V/3.3V SiO/SiN ... | Original |
4 pages, |
71M6543 71M6543 abstract |
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| Abstract: Operating Life1, 2 Long Term Failure Rate Device Tested/ Device Hours # Fails Activation Energy , Accuracy EPROM Programmable Single-PLL Clock Generator L28 Technology, CTI fab 2 and TSMC fab 2A, Taiwan , Purpose: Qualify CY2077 CY2077 product fabricated at CTI fab 2 and TSMC-2A, Taiwan using L28 Technology. , Product Division, WA Division Overall Die (or Mask) REV: Die Size: Rev. A TSMC 59.0 mils x 44.1 , /Location of Die Fab (prime) Facility: TSMC-2A, Taiwan Die Fab Line ID/Wafer Process ID: TSMC ... | Original |
9 pages, |
tsmc cmos MIL-STD-883C method 2011 1120008 tsmc datasheet abstract |
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| Abstract: Temperature at Stress (°K) Ea = Activation Energy (e.g. 0.7 ev) The activation energy of the failure mechanism is derived from either internal studies or industry accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms or their activation energies are unknown. All , : TSMC 0.25um, Mixed signal, Embedded flash, General Purpose, Double poly Quad metal, 2.5V/3.3V SiO/SiN ... | Original |
4 pages, |
71M6543 71M6543G 71M6543G abstract |
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