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transistors sot-223 06a

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transistors sot-223 06a

Abstract: P2F MARKING MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# PZT2907A · · · · Features Surface Mount SOT-223 Package Capable of 1Watts of Power Dissipation ICM:0.6A Marking:p2F PNP Plastic-Encapsulate Transistors SOT-223 Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (IC=-1mAdc, IB=0) Collector-Base Breakdown Voltage (IC=-100µAdc, IE=0) Emitter-Base Breakdown Voltage (IE
Micro Commercial Components
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transistors sot-223 06a P2F MARKING ON MARKING P2F 100MH

transistors sot-223 06a

Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# PZT2907A · · · · Features Surface Mount SOT-223 Package Capable of 1Watts of Power Dissipation ICM:0.6A Marking:p2F PNP Plastic-Encapsulate Transistors Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (IC=-1mAdc, IB , Units Vdc Vdc Vdc nAdc -50 -0.01 µAdc SOT-223 OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IEBO
Micro Commercial Components
Original

transistors sot-223 06a

Abstract: p2f sot-223 MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# PZT2907A · · · · · Features Surface Mount SOT-223 Package Capable of 1Watts of Power Dissipation ICM:0.6A Marking:p2F Operating and Storage Junction Temperatures: -55 to 150 PNP Plastic-Encapsulate Transistors SOT-223 Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (IC=-1mAdc, IB=0) Collector-Base Breakdown Voltage (IC
Micro Commercial Components
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p2f sot-223 ic 331

MARKING P2F

Abstract: transistors sot-223 06a MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# PZT2907A · · · · Features Surface Mount SOT-223 Package Capable of 1Watts of Power Dissipation ICM:0.6A Marking:p2F PNP Plastic-Encapsulate Transistors SOT-223 Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (IC=-1mAdc, IB=0) Collector-Base Breakdown Voltage (IC=-100µAdc, IE=0) Emitter-Base Breakdown Voltage (IE
Micro Commercial Components
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MARKING P2F

G2N60

Abstract: G2N6 Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is , , robotics, and servo controls. D C S G G E SOT-223 Absolute Maximum Ratings Symbol VCES , Collector - Emitter Voltage, V [V] CE 3 Load Current [A] 2.0 1.2A 2 I C = 0.6A 1 1.5 1.0 , Voltage, V CE [V] 16 12 12 8 8 2.4A 4 IC = 0.6A 0 1.2A 4 IC = 0.6A 1.2A 2.4A 0 , Package Dimension SOT-223 0.08MAX 3.00 ±0.10 MAX1.80 1.75 ±0.20 3.50 ±0.20 (0.60) 0.65
Fairchild Semiconductor
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SGM2N60UF G2N60UF G2N60 G2N6 sGm2N60 SGM2N60UFTF

ZT2907A

Abstract: transistors sot-223 06a MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# PZT2907A · · · · x Features Surface Mount SOT-223 Package Capable of 1Watts of Power Dissipation ICM:0.6A Marking:ZT2907A Operating and Storage Junction Temperatures: -55 to 150 PNP Plastic-Encapsulate Transistors SOT-223 x Case Material: Molded Plastic. Classification Rating 94V-0 Symbol Parameter UL Flammability Electrical Characteristics @ 25°C Unless Otherwise Specified Min -60 -60
Micro Commercial Components
Original

transistors sot-223 06a

Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# PZT2907A · · · · · Features Surface Mount SOT-223 Package Capable of 1Watts of Power Dissipation ICM:0.6A Marking:P2F Operating and Storage Junction Temperatures: -55 to 150 PNP Plastic-Encapsulate Transistors SOT-223 · Case Material: Molded Plastic. Classification Rating 94V-0 Symbol Parameter UL Flammability Electrical Characteristics @ 25°C Unless Otherwise Specified Min -60 -60
Micro Commercial Components
Original

transistors sot-223 06a

Abstract: SGM2N60UF Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is , servo controls. D C S G G E SOT-223 Absolute Maximum Ratings Symbol VCES VGES , ] Collector - Emitter Voltage, V [V] CE SGM2N60UF 12 1.2A 2 I C = 0.6A 2.0 1.5 1.0 1 , , VCE [V] 1000 Frequency [KHz] Case Temperature, TC [ C] 16 12 8 4 IC = 0.6A 1.2A 2.4A 0 16 12 8 2.4A 4 1.2A IC = 0.6A 0 0 4 8 12 Gate -
Fairchild Semiconductor
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SOD223

Abstract: LESHAN RADIO COMPANY, LTD. General Purpose Transistors Pb-Free packkage is available , 70 / SOT - 323 , SC -70ML / SOT -363, SOT- 23, TSOP - 6, in 8 mm Tape . SOT - 223 in 12 mm Tape . , . SOD-123 8mm SOD-223 12mm SC-70ML/SOT-363,TSOP-6 T1 ORIENTATION 8mm SC-59, SC-70/SOT , -23 SOT-223 SC-70ML SOT-363 TSOP-6 Tape Width (mm) 8 8 8 16 16 16 16 8 8 8 8 12 12 8 , Outside Dimension Measured at Edge 13.0mm ± 0.5mm 1.5mm Min (.512 ±.002â'™â'™) (.06â'™â'™) A
Leshan Radio Company
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SOD223 L2SC1623 L2SC1623QLT1G L2SC1623RLT1G L2SC1623SLT1G

FS8860-33CJ

Abstract: FS8860 SOT-223 and TO-252 packages. 2. Ordering Information FS8860-xx x x Package Applications , Voltage Micro-Controllers Post Regulator for Switching Power Pin Out G:SOT-223 1.IN 2.GND 3.OUT H:SOT-223 1.GND 2.IN 3.OUT J:SOT-223 1.GND 2.OUT 3.IN P:TO-252 1.IN 2.GND 3.OUT R:TO , capacitor Output current limit Thermal overload shutdown protection SOT-223 and TO-252 Packages 3 , . Pin Configurations SOT-223 Part No. Pin 1 Pin 2 Pin 3 FS8860 -xxxG IN GND/ADJ
Fortune Semiconductor
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FS8860-33CJ FS8860-DS-18
Abstract: Description 2. FS8860-xx x x Package Pin Out J:SOT-223 1.GND 2.OUT 3.IN Note : For the adjustable , capacitor Output current limit Thermal overload shutdown protection SOT-223 Packages 3. Ordering , shutdown protection. The FS8860 devices are available in SOT-223 packages. 4. Applications 5. Pin Configurations Part No. SOT-223 Pin 1 FS8860 GND/ADJ -xxGJ Pin 2 Pin 3 OUT , input bypassing for almost all applications. OUT is the output voltage pin. Sources up to 0.6A Fortune Semiconductor
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FS8860-DS-19 FS8860- FS8860-C

diode 1000V 10a

Abstract: 200v 1.5v 3a diode Power Devices High Speed, M edium Voltage Transistors Package Outline TO-220AB TO-220AB TO-220AB TO-220AB (in o r d e r o f c u rr e n t rating) VCE (sat) max. at le 1V at 5A 1.5V at 6A 1.5V at 4A 1.5V at 8A 1V at 7A 1.5V at 12A IV at 10A max. at I q 750ns at 5A 40ns at 6A 40ns at 4A 40ns at 8A , diode. High Speed, High Voltage Transistors Type No. BUX86 BUX87 BUX99 BUX84 BUX85 BUX84F BUX85F , at 1A/0.2A 1.5V at 3A/0.6A 1.5V at 2.5A/0.5A 1.5V at 3A/0.6A 1.5V at 2.5A/0.5A 1.5V at 3A/0.6A 1.5V
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4045AV diode 1000V 10a 200v 1.5v 3a diode TO-220aB 11A DIODE 2A 400V diode 6A 1000v BU407 BUV28 BUV28A BUV27 BUV27A BUV26

KSC1330

Abstract: KSC945 TRANSISTORS 3. QUICK REFERENCE TABLE (APPLICATION) 3.1 Audio Equipment "i FUNCTION GUIDE , TRANSISTORS 3.2 Video Equipment Application Tuner VHF RF TO-92 SOT-23 M IX TO-92 SOT-23 UH F TO-92 UHF RF , -126 TO-220 Sw itching Driver TO-92 49 ELECTRONICS TRANSISTORS SOT-23 TYPE Ic VcEO\ 12V 14V 20m A , FUNCTION GUIDE 0.5A 0.6A 0.8A 10mA 15V 20V (2mA) KSK123 KST4124 KST4126 KSA1298 , KST92 KST5550 KST5551 300V 50 ELECTRONICS TRANSISTORS TO-92S, TO-92 & TO-92L TYPE xV C E
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KSC838 EDX53 BD53A KSE13009F KSC1330 KSC945 KSA733 KSE 13007 L BD139 KSC2223 KSC2715 KSC1623 KSC1674 KSC1674/KSC1675 KSC838/KSC1676

VN2106

Abstract: VN2106N3 available s High input impedance and high gain These enhancement-mode (normally-off) transistors , combination produces devices with the power handling capabilities of bipolar transistors and with the high , , displays, bipolar transistors, etc.) Drain SGD Gate Source TO-236AB (SOT-23) top view , , VDS = 25V, f = 1MHz ns VDD = 25V ID = 0.6A RGEN = 25 V ISD = 0.6A, VGS = 0V ns ISD = 0.6A, VGS = 0V Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated
Supertex
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VN2106 VN2110 VN2106N3 VN2110K1 VN2106ND VN2110ND

diode 400V 4A

Abstract: DIODE 3A 1000V TRANSISTORS (in order of current rating) TYPE NO, PACKAGE OUTLINE IC(DC)(1) VCES VCEO VcE(Mt) MAX. at lC/lB t , 850V 1000V 400V 450V 1.5V at 3A/0.6A 1.5Vat2.5A/0.5A 80ns at 3A 80ns at 2.5A BUT11F BUT11AF SOT-186 (F-PAK) 5A 850V 1000V 400V 450V 1.5V at 3A/0.6A 1.5V at 2.5A/0.5A 80ns at 3A 80ns at 2.5A BUW11 BUW11A SOT-93 5A 850V 1000V 400V 450V 1.5V at 3A/0.6A 1.5V at 2.5A/0.5A 80ns at 3A 80ns at 2.5A BUS 11 BUS11A TO-3 5A 850V 1000V 400V 450V 1.5V at 3A/0.6A 1.5V at 2.5A/0.5A 80ns at 3A 80ns at 2.5A BUT21A
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ESM3045AV ESM3045DV ESM4045AV ESM5045DV ESM6045DV diode 400V 4A DIODE 3A 1000V Diode 400V 5A 1000v 3a diode BU826 BU826A BUV90 BUV90F

marking codes N1A transistors sot-23

Abstract: VN2106 These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex , capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient , , displays, bipolar transistors, etc.) Drain SGD Gate Source TO-236AB (SOT-23) top view , , VDS = 25V, f = 1MHz ns VDD = 25V ID = 0.6A RGEN = 25 V ISD = 0.6A, VGS = 0V ns ISD = 0.6A, VGS = 0V Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated
Supertex
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marking codes N1A transistors sot-23 marking codes N1A n1ap VN2106/VN2110

BUS11A PHILIPS SEMICONDUCTOR

Abstract: indicates integral diode. HIGH SPEED, HIGH VOLTAGE TRANSISTORS (in order of current rating) PACKAGE O U , 5A 850V 1000V 400V 450V 1.5V at 3A /0.6A 1.5V at 2.5A/0.5A 80ns at 3A 80ns at 2.5A BUT11F BUT11AF SOT-186 (F-PAK) 5A 850V 1000V 400V 450V 1.5V at 3A /0.6A 1.5V at 2.5A , at 3A /0.6A 1.5V at 2.5A/0.5A 80 ns at 3A 80ns at 2.5A BUS 11 BUS11A TO-3 5A 850V 1000V 400V 450V 1.5V at 3 A /0.6A 1.5V at 2.5A/0.5A 8 0 n s a t 3A 80ns at 2.5A BUT21A
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BUS11A PHILIPS SEMICONDUCTOR 3045DV 4045DV 5045DV ESM6045AV 6045DV

n1a sot23 marking code

Abstract: n1a sot 23 marking code ) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with , circuits Driver (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Drain , = 1MHz *d(ON) tr ns 9 VD D = 25V lD= 0.6A R qen *d(OFF) tf =25Ü 8 1.8 V ns lS D = 0.6A, VG S = 0V lS D = 0.6A, Vgs = 0V ^S D trr Notes: 1. All D.C. parameters 100% tested
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n1a sot23 marking code n1a sot 23 marking code n1A marking n1a marking code

ESM40

Abstract: BUT21A diode. HIGH SPEED, HIGH VOLTAGE TRANSISTORS (in order of current rating) PACKAGE VCE(MI) t,typ , /0.6A 80ns at 3A BUT11A 1000V 450V 1.5Vat2.5A/0.5A 80ns at 2.5A BUT11F SOT-186 5A 850V 400V 1.5V at 3A/0.6A 80ns at 3A BUT11AF (F-PAK) 1000V 450V 1.5V at 2.5A/0.5A 80ns at 2.5A BÃW11 SOT-93 5A 850V 400V 1.5V at 3A/0.6A 80ns at 3A BUW11A 1000V 450V 1.5V at 2.5A/0.5A 80ns at 2.5A BUS 11 TO-3 5A 850V 400V 1.5V at 3A/0.6A 80ns at 3A BUS11A 1000V 450V 1.5V at 2.5A/0.5A 80ns at 2.5A BUT21A TO
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ESM4045DV ESM40 10a 1000v to220a bux86 philips semiconductor SOT93 mje1300 T-32-OI SM3045DV TIP47 TIP48 TIP49

marking codes N1A transistors sot-23

Abstract: ML4800 power supply circuit Information. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and , power handling capabilities of bipolar transistors and with the high input impedance and positive , circuits s Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc , 150 VDS = 25V, ID =0.5A pF VGS = 0V, VDS = 25V, f = 1MHz ns VDD = 25V ID = 0.6A RGEN = 25 V ISD = 0.6A, VGS = 0V ns ISD = 0.6A, VGS = 0V Notes: 1. All D.C. parameters
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VN2110N3 ML4800 power supply circuit vn2106nf sot-23 Marking G1 s4 marking code siemens sot-23 DIODE marking code D3 mos n-channel SOT-23 VN2106NF VN2110NF
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