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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

transistors 458

Catalog Datasheet MFG & Type PDF Document Tags

2n2222 to-92

Abstract: 2N2222A TO-92 Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES (continued) NPN LOW-POWER SWITCHING TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA , 100 340 120 630 150 800 BCY78 458 BCY58/VII TO-18 32 100 340 120 220 150 800 BCY78/VII 458 BCY58/VIII TO-18 32 100 340 180 310 150 800 BCY78/VIII 458 BCY58/IX TO-18 32 100 340 250 460 150 800
Philips Semiconductors
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PH2907A 2n2222 to-92 2N2222A TO-92 2N2907A TO-92 2N2222A TO-18 transistor 2n2222a data sheet to-92 transistors 458 2N2222 2N2907A 2N2222A 2N2369 2N2369A 2N3904

gk12

Abstract: sot326 BF 457 BF 458 BF 459 SILICON PLANAR NPN HIGH VOLTAGE VIDEO AMPLIFIERS The BF 457, BF 458 and BF 459 are silicon planar epitaxial NPN transistors in Jedec TO-126 plastic package;. They are , stages and drivers for horizontal deflection circuits. These transistors have been studied in order to guarantee the maximum resistance against flash over. ABSOLUTE MAXIMUM RATINGS BF 457 BF 458 BF 459 VcBO , BF 457 BF 458 BF 459 THERMAL DATA Rth j-case Thermal resistance junction-case max 10 °c/w Rth
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gk12 sot326 BF458 BF459 BF457 160i G-K12
Abstract: 2N3266 Si NPN Power BJT 4.58 Transistors Transistors Bipolar Si NPN. Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3266 2N3266 Si NPN Po w er BJ T Enter code INTER3 at checkout.* CUSTOMER , Available from $ 4.58 Information Spec Sheets Tutorials Shipping FAQs Manufacturer Partnumber: List Price: Our Price: You Save: Americanmicrosemi 2N3266 $ 5.72 $ 4.58 $ 1.14 Total Price $ 4.58 American Microsemiconductor
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2N3723

Abstract: 2N3723 Si NPN LP HF BJT 4.58 Transistors Transistors Bipolar Si NPN. Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3723 2N3723 Si NPN LP HF BJ T Enter code INTER3 at checkout.* CUSTOMER , Warehouse Products Search for Parts Request a Quote In Stock 11 Brand New Available from $ 4.58 , : Americanmicrosemi 2N3723 $ 5.72 $ 4.58 $ 1.14 Total Price $ 4.58 Company Testimonials Store Policies
American Microsemiconductor
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BF457

Abstract: iC 458 Manufacturer NPN PLASTIC POWER TRANSISTORS BF457, 458, 459 TO126 Plastic Package EC B Video Output Stages of TV Sets , for AF Output Stages with a High Operating Voltage and as Driver Transistors , POWER TRANSISTORS BF457, 458, 459 TO126 Plastic Package EC B DESCRIPTION Saturation , =6mA 457 Continental Device India Limited Data Sheet 458 UNITS V V V mA mA mA W W °C , Voltage 458 459 >250 >300 >250 >300 >5.0
Continental Device India
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iC 458 C-120 BF457-459
Abstract: NPN PLASTIC POWER TRANSISTORS BF457, 458, 459 TO126 Plastic Package EC B Video Output Stages of TV Sets , for AF Output Stages with a High Operating Voltage and as Driver Transistors in , PLASTIC POWER TRANSISTORS BF457, 458, 459 TO126 Plastic Package EC B DESCRIPTION Saturation , =6mA 457 Continental Device India Limited Data Sheet 458 UNITS V V V mA mA mA W W Â , Saturation Voltage 458 459 >250 >300 >250 >300 >5.0 Continental Device India
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iC 458

Abstract: bf457.459 NPN PLASTIC POWER TRANSISTORS BF457, 458, 459 TO126 Plastic Package EC B Video Output Stages of TV Sets , for AF Output Stages with a High Operating Voltage and as Driver Transistors in , Continental Device India Limited Data Sheet 458 UNITS V V V mA mA mA W W °C °C K/W K/W 459 UNITS , >250 >5.0 300 >300 V V V V Page 1 of 4 NPN PLASTIC POWER TRANSISTORS
Continental Device India
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bf457.459

2n4401 331

Abstract: 2n4403 331 .458 8 lumm Transistors Product List DTA114WUA , Transistors Product List Product List 2N3904 , 5 Transistors Product List 2SB1326 , 285 301 238 238 214 238 302 307 214 229 270 raum 7 Transistors Product List 2SD2166 , .316 class="hl">458
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2n4401 331 2n4403 331 2n3904 409 2n3904 331 k 2715 1352s 2N3906 2N4401 2N4403 2SA821S 2SA830S 2SA854S

Transistor B C 458

Abstract: c 458 c transistor NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR *BF 457 *BF 458 *BF 459 BF 457, BF 458 and BF 459 are plastic encapsulated transistor designed for video output stages in black and white and color TV receivers. These transistors feature lowthermal resistance and exceptional ability to withstand picture tube arcing. Les transistors sous encapsulation plastiqua BF 457, BF 458 at BF459sont , contraires! BF 457 BF 458 BF 459 Collector-emitter voltage Tension coflectaur-4mettaur vCEO 160 250 300 V
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Transistor B C 458 c 458 c transistor transistor c 458 transistor bf 458 transistor 458 NPN transistor 458 CB-16

transistor S104

Abstract: TRANSISTOR 2SC 458 25C D â  aZBSbOS 00044^5 T HSIE6 IM PN Silicon RF Transistors . "5C 04495 SIEMENS AKTIENGESELLSCHAF for video and AF output stages BF 457, BF 458 and BF 459 are epitaxial NPN silicon planar transistors in TO 126 plastic package (12 A 3 DIN 41 869). The collector is conductively connected to the metallic mounting area of the transistor. The transistors are especially designed for use in video output stages of TV receivers, for AF output stages of high operating voltage, and as driver transistors in
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Q62702-F315 Q62702-F316 Q62702-F317 Q62902-B62 Q62902-B63 transistor S104 TRANSISTOR 2SC 458 s104 transistor 2sc 1919 S104 transistor bf458

BF 184 transistor

Abstract: transistors 458 BF 457 BF 458 SILICON PLANAR NPIN BF 459 PRELIMINARY DATA HIGH VOLTAGE VIDEO AMPLIFIERS The BF: 457, BF 458 and BF 459 are silicon planar epitaxial NPN transistors in Jedec TO-126 plastic , receivers, class A output stages and drivers for horizontal deflection circuits. These transistors have been , BF 458 BF 459 Vcbo Collector-base voltage (lE = 0) 160 V 250 V 300 V VcEO Collector-emitter , . Unit lCBO Collector cutoff current (lE = 0) for B F 457 VCB= 100 V for BF 458 VCB=200V for BF 459
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BF 184 transistor IC 41 BF O-1412

BC548 BC847

Abstract: BC338/BC546 Philips Semiconductors Selector guide Bipolar transistors TYPE NUMBER V CEO (V) ·c (mA) Ptot (mW) min. h FE max. fT(M IN ) typ (MHz) PAGE Leaded transistors NPN BC337 , 50 100 100 58 58 58 61 61 61 89 89 869 869 180 240 Surface mounted transistors NPN BC846 , - 100 100 100 50 50 50 50 20 20 62 62 62 458 458 453 453 461 461 200 200 1996 Aug 19 , 40 40 800 800 800 - Bipolar transistors 100 100 100 50 50 50 50 63 63 63 464 464 456 456 -
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BC548 BC847 BC338/BC546 BC338 BC546 BC337A BC338 BC546 BC547 BC548 MPSA42

iC 458

Abstract: D457 BF457, BF458, BF459 BF457, 458, 459 NPN PLASTIC POWER TRANSISTORS Video Output Stages of TV Sets^' for AF Output Stages with a High Operating Voltage and as Driver Transistors in Horizontal , ) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current 457 458 459 VCBO , VcEsat max. 1.0 V hFE min. 25 -d) 457 458 459 VCBO max. 160 250 300 V VCEO max. 160 250 300 V , max. 1.2 w Tj max. 150 °.c Tste -65 to +150 Rth j-c 10 K/W Rthj-a 104 K/W 457 458 459 ICBO
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D457 horizontal deflection circuit RIA 250 12 pin ic bf459 transistor 0G01E17 23A33T4

BF457

Abstract: bf459 cdil BF457, BF458, BF459 BF457, 458, 459 NPN PLASTIC POWER TRANSISTORS Video Output Stages of TV Sets, for AF Output Stages with a High Operating Voltage and as Driver Transistors in Horizontal , . max. max. max. max. min. 457 160 160 458 250 250 100 10 150 1.0 25 459 300 300 V V mA W °C V Ptot , (open collector) V ebo C ollector current lc max. max. max. max. 457 160 160 458 250 250 5.0 , . max. 160 160 50 - 458 50 50 250 250 5.0 1.0 25 5.5 90 4.2 459 50 nA nA nA nA 300 300 V V V V
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bf459 cdil
Abstract: BF457, BF458, BF459 BF457,458,459 NPN PLASTIC POWER TRANSISTORS Video O utput Stages of TV Sets, for A F Output Stages with a High Operating Voltage and as Driver Transistors in Horizontal , collector) Vebo Collector current ic max. max. max. max. 457 160 160 2-23 â  458 250 , m 458 250 250 5.0 100 V 459 300 300 V V V mA BF457, BF458, BF459 , = 1 mA; VCE = 30V 458 50 - 50 - 459 ICBO ICBO ICBO max. max. max. lEBO -
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Q0D1217
Abstract: Transistors IC DIP Type SMDType NPN High Voltage transistor A42 TO-92 Unit: mm +0.25 4.58 â'"0.15 â  Features 4.58 ±0.20 ● Epitaxial planar die construction. ● Ideal for medium power amplification and switching. ● Complementary PNP type available (A92). ±0.10 1.27TYP , 100 100 to 150 150 to 200 200 to 250 www.kexin.com.cn 1 IC Transistors SMD Type DIP Type A42 â  Typical Characteristics www.kexin.com.cn 2 Transistors IC DIP Type Kexin
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86MAX

TFK u 269

Abstract: BF457 M! BF 457 â'¢ BF 458 â'¢ BF 459 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendung: Video-Endstufen in Schwarz-WeiÃ- und Farb-FS-Geräten Application , Emitter-base voltage Kollektorstrom Collector current JCBO CEO JEBO BF457 BF 458 BF459 160 250 300 V 160 250 300 V 5 V 100 mA B 2/V.2. 515/0875 A 1 267 BF 457 â'¢ BF 458 â'¢ BF 459 , 100 V UCB = 200 V UCB = 250 V Emitterreststrom Emitter cut-off current C/eb = 3V BF 457 BF 458 'CBO
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TFK u 269 din 125a bf 459 bo 913

BF458-BF459

Abstract: JEDECTO126 transistors in JedecTO-126 plastic package. They are particularly intended for use as video output stages in , circuits. These transistors have been studied in orderto guarantee the maximum resistance against flash , 458 BF 459 VcBO Collector-base Voltage (Ie = 0) 160 250 300 V VcEO Collector-emitter Voltage (lB =0 , Vcb=100V for BF 458 Vcb = 200 V for BF 459 VCB = 250 V 50 50 50 nA nA nA V(BR)CEO* Collector-emitter Breakdown Voltage (lB = 0) for BF 457 Ic = 10 mA for BF 458 for BF 459 160 250 300 V V V V(BR
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BF458-BF459 JEDECTO126 g1412 npn transistors, video amplifiers horizontal COLOUR TV SCHEMATIC DIAGRAM BF457-BF458-BF459 G-1412 T-33-05
Abstract: transistors in Jedec TO-126 plastic package. They are particularly intended for use as video output stages , deflection circuits. These transistors have been studied in order to guarantee the maximum re­ sistance , 457 B F 458 BF 459 VcBO Collector-base Voltage VcEO Collector-emitter Voltage ( lB = 0) V , o < II for BF 457 for BF 458 for BF 459 U nit o o < lc = 10 mA , for BF 458 for BF 459 Collector Cutoff Current (Ie =0) Icbo < < o o o < P a ra m e te r -
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F457-B F458-B F458-BF459
Abstract: Transistor IC DIP Type SMD Type Product specification A42 TO-92 Unit: mm +0.25 4.58 â'"0.15 â  Features 4.58 ±0.20 ● Epitaxial planar die construction. ● Ideal for medium power amplification and switching. ● Complementary PNP type available (A92). ±0.10 1.27TYP , 4008-318-123 1 of 3 IC Transistors Transistor IC SMD Type DIP Type DIP Type SMD Type Product , 4008-318-123 2 of 3 Transistors IC DIP Type SMD Type Product specification A42 â  Typical TY Semiconductor
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