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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: transistor wm bSE D â- 711002b DDb2flD2 123 BLV10 BLV10 IPHIN APPLICATION INFORMATION R.F. performance in c.w. , PHILIPS INTERNATIONAL bSE D â- 711Dö2b â-¡Db57clö T72 BLV10 BLV10 IPHIN J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and , Its Respective Manufacturer PHILIPS INTERNATIONAL V.H.F. power transistor Wf bSE D â- 711DÃ-5b ... | OCR Scan |
8 pages, |
BLV10 transistor wm BLV10 abstract |
| Abstract: Package Details Leadless Wedge Module Plastic Small Outline Transistor (WM) (SOT385) E CH1 X 45 ° , HCS410/WM KEELOQ® Crypto Read/Write Transponder Module PACKAGE TYPES FEATURES SOT385 Security HCS410/WM · Two programmable 64-bit encryption keys · 16/32-bit bi-directional challenge , The HCS410/WM is a transponder device designed for secure entry systems. The HCS410/WM utilizes bidirectional challenge-and-response for logical and physical access control. The HCS410/WM integrates an ... | Original |
20 pages, |
WM Marking code 1x100 630 automotive Immobilizer HCS410 immobilizer in car operation immobilizer transponder 1x100 WM Mark code immobilizer car marking WM transistor wm Transponder immobilizer TRANSISTOR MS 173 TE HCS410/WM HCS410/WM abstract |
| Abstract: TRANSISTOR 3-Lead Plastic Transistor Outline (TO) (TO-92) .12 3-Lead Plastic Small Outline Transistor (TT) (SOT23) .13 5-Lead Plastic Small Outline Transistor (OT) (SOT23) .14 Leadless Wedge Module Plastic Small Outline Transistor (WM) (SOT385 , Parameters Leadless Wedge Module Plastic Small Outline Transistor (WM) (SOT385) E CH1 x 45 ° F D ... | Original |
66 pages, |
transistor wm tip 3035 transistor footprint jedec MS-026 TQFP 128 footprint jedec MS-026 TQFP c04090 30014 SP-750 datasheet abstract |
| Abstract: in a very short period, a simple transistor circuit can be used to discharge VMID more quickly , 1.2, March 2004 3 WAN_0148 IMPORTANT NOTICE Wolfson Microelectronics plc (WM) reserve the right , , that information being relied on is current. All products are sold subject to the WM terms and , , patent infringement, and limitation of liability. WM warrants performance of its products to the specifications applicable at the time of sale in accordance with WM's standard warranty. Testing and other ... | Original |
4 pages, |
EH11 WM8759 WM8759 abstract |
| Abstract: internal electret membrane, metal electrode and a Field Effect Transistor (FET). Doesn't need a , ground Panasonic Part No. Fig. 12 Fig. 13 output output WM-63GCT WM-63GNT WM-63PRT WM-E15BT WM-E15BT WM-64AT WM-64C WM-64K WM-64MCT WM-64MNT WM-64PCT WM-64PNT WM-62CC WM-62HNT WM-61A WM-61B WM-60AY WM-54BT WM-034CY195M WM-034BY WM-63GNT330 WM-63GNT335 WM-64MNT330A WM-55A103 WM-56A103 WM-65A103 WM-67D103 WM-55D103 output output ground ground Fig. 10 output ... | Original |
1 pages, |
P9958-ND P9961-ND WM-65A103 P11969-ND WM-64PC P9949-ND PANASONIC WM wm-55d103 WM-52BM P9952 hearing aid microphone lm386 P9955-ND WM-60AY WM-034 datasheet abstract |
| Abstract: from the WM8762EV1 WM8762EV1 evaluation board, a transistor clamp circuit arrangement has been added to the , evaluation board, PNP transistor Q1 of the trigger circuit is held on until capacitor C9 is fully charged. With transistor Q1 held `on', NPN transistors Q3 and Q4 of the clamp circuits are also switched on , evaluation board, PNP transistor Q2 of the trigger circuit is switched on. In turn, transistors Q3 and Q4 of , NPN Switching Transistor SOT23 Q3-4 2 FMMT717 FMMT717 PNP Switching Transistor SOT23 Q1-2 2 ... | Original |
14 pages, |
4 PIN THROUGH HOLE TRANSISTORS AES/EBU transceiver CS8427 DS1813 j13 SMD Transistor SMD 0805 capacitor SMD TRANSISTOR j11 smd transistor J6 pin WM8762 SMD TRANSISTOR L6 SMD Transistor PNP 3pin transistor wm a 3pin WM8762 abstract |
| Abstract: 2. Current flows in this direction if the circuit incorporates the transistor. TL-W/WM TL-W/WM , 100/200 mA NPN or PNP Inductive Proximity Sensor TL-W/WM Space Saving Flat Proximity Switch , TL-W20ME2 TL-W20ME2 - - 1 TL-W/WM TL-W/WM Application Examples Position of Workpiece , sensing object. TL-W/WM TL-W/WM DC 3-wire Item TL-W1R5M TL-W3M 3 mm �% TL-W5M TL-W5 , TL-W/WM TL-W/WM Engineering Data Operating Range (Typical) Sensing object Sensing ... | Original |
11 pages, |
TL-W20ME2 TL-W3MC1 6012 aluminium data sheet TL-W5MB1 TL-W3MC2 IP67G npn transistor w5 omron MAGNETIC HEAD distance sensor datasheet proximity switch wiring resistive Humidity Sensor DC-3 distance sensor circuit datasheet abstract |
| Abstract: PHILIPS INTERNATIONAL Philips Semiconductors 41E J> WM 711DaEti 0030445 T «PHIN 7110ûHb 0030«43b , Manufacturer PHILIPS INTERNATIONAL 41E J> WM 711DaEti 0030445 T «PHIN Philips Semiconductors Product , UNIT Diode If forward current DC value - 100 mA Transistor Vceo collector-emitter voltage , Manufacturer PHILIPS INTERNATIONAL 41E J> WM 711DaEti 0030445 T «PHIN Philips Semiconductors Product , ; S = 0.01 3 A Plot total power dissipation up to Tamb = 25 °C - 200 mW Transistor VceO ... | OCR Scan |
14 pages, |
CNW83 CNW82 BS7002 BS415 philips cnw83 PHILIPS CNW82 CNW82/CNW83 CNW82/CNW83 abstract |
| Abstract: Photo Diode 150 100 15 850 10 2 1.0 1 20 A NJL612B NJL612B 150 100 15 850 30 2 1.0 1 25 Wm PHOTO TRANSISTOR , 10 0.5 100 20 Ti NJL721B NJL721B Photo Transistor 150 40 50 740 2.5 10 2 100 30 Sïpii NJL722B NJL722B 150 8 50 740 5 10 2 200 30 NJL7260B NJL7260B Photo Darlington Transistor 150 25 100 740 12.5 10 0.2 100 6 Ill , 1min NJL5121D NJL5121D* Transistor Output 250 70 35 30 300 10 50 6 4000 mm NJL5125D NJL5125D* Darlington 200 70 35 300 - 1 100 5 4000 Iii Transistor Output NJL5126D NJL5126D* AC Input 300 ±70 35 100 600 10 100 5 ... | OCR Scan |
1 pages, |
NJL1104B NJL1112B NJL1120B NJL1120F NJL1121F NJL1122B NJL112IB NJL6103B NJL611B NJL612B NJL5125D NJL1110B TRansistor A 940 NJL1104B abstract |
| Abstract: 100/200 mA NPN ou PNP ITL-W/WM DETECTEUR DE PROXIMITE INDUCTIF Détecteur de proximité plat , la pièce 1 TL-W/WM TL-W/WM Caractéristiques techniques Référence TL-W3M TL-W5M , Plastique (ABS résistant à la chaleur) 45 g env. 70 g env. 180 g env. TL-W/WM TL-W/WM , ) Laiton Aluminium Dia. d de l'objet (mm) 3 TL-W/WM TL-W/WM TL-W20M TL-W20M Fer d Distance de , principal Circuit principal 0V TL-W/WM TL-W/WM Diagrammes de fonctionnement TL-W3M_ ... | Original |
6 pages, |
TL-W5MB1 TL-W5F1 datasheet TL-W3MB2 TL-W20ME2 SUS304 npn transistor w5 IP67G circuit logique datasheet abstract |
| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| /Agilent Wireless Mouse Reference Design // // File: "WM430_wheel.h" // // Author: Randy Wu // Company . //* #ifndef _WM430_SCROLLWHEEL_H #define _WM430_SCROLLWHEEL_H #include #include "wm430 unsigned char WM430_SYS_eventFlags; extern unsigned int WM430_SYS #define ZENCODER_QMASK (ZENCODER_QA+ZENCODER_QB) #define ZWHEEL_EN BIT3 // Transistor gate * #define WM430_WHEEL_QUADSTATE0 0 #define WM430_WHEEL_QUADSTATE1 1 #define WM430_WHEEL_QUADSTATE2 2 www.datasheetarchive.com/download/77863991-851887ZC/slaa302.zip (wm430_wheel.h) |
Texas Instruments | 26/08/2008 | 60.09 Kb | ZIP | slaa302.zip |
| * * * * PDTA144WM * * NXP Semiconductors * * Resistor equipped PNP transistor (RET) * IC = 100 mA * VCEO = 50 V * hFE = min. 60 @ 5V/5mA * R1 = 47 Kohm * R2 = 22 Kohm * * Package: SOT 883 * * Package Pin 1: Base * Package Pin 2: Emitter * Package Pin 3: Collector * * * Extraction date (week/year): 08 : Resistances R1 and R2 are not part of the * model and have to be added separately. * .MODEL QPDTA144WM PNP www.datasheetarchive.com/download/12357188-596957ZC/30588.zip (PDTA144WM.prm) |
NXP | 23/10/2012 | 252.45 Kb | ZIP | 30588.zip |
| * * * * PDTC144WM * * NXP Semiconductors * * Resistor equipped NPN transistor (RET) * IC = 100 mA * VCEO = 50 V * hFE = min. 60 @ 5V/5mA * R1 = 47 Kohm * R2 = 22 Kohm * * Package: SOT 883 * * Package Pin 1: Base * Package Pin 2: Emitter * Package Pin 3: Collector * * * Extraction date (week/year): 31 : Resistances R1 and R2 are not part of the * model and have to be added separately. * .MODEL QPDTC144WM NPN www.datasheetarchive.com/download/12357188-596957ZC/30588.zip (PDTC144WM.prm) |
NXP | 23/10/2012 | 252.45 Kb | ZIP | 30588.zip |
| PDTC144W PDTC144W PDTC144W PDTC144W series; NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm General info NPN resistor-equipped transistor (see "Simplified outline, symbol and pinning" for Transistors and Rectifiers for Power Management Applications 2003-12-09 Parametrics TYPENUMBER 144W series NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm 17 Reel Pack, SMD SOT346 RFS Chemical content PDTC144WM 9340 571 www.datasheetarchive.com/files/philips/pip/pdtc144w_series_7.html |
Philips | 15/06/2005 | 9.01 Kb | HTML | pdtc144w_series_7.html |
| ENABLE, and bipolar Darlington transistor drivers for each latch. Bipolar -emitter outputs with suppression diodes for protection against inductive load transients. The output transistors . The MIC5891 MIC5891 MIC5891 MIC5891 is available in a 16-pin plastic DIP package (N) and 16-pin wide SOIC package (WM www.datasheetarchive.com/files/micrel/products/products/mic5891.html |
Micrel | 26/06/2002 | 9.98 Kb | HTML | mic5891.html |
| along interfaces, to a nearby transistor. PMIC causes MOS transistors to leak and shifts their failing circuit transistor, are usually required to make a conclusive determination of the failure . Consider a case in which the gate oxide of an n-channel MOS transistor has been contaminated with sodium polysilicon gate and the silicon substrate. The CSIC microcontroller that contains this transistor passes operates or tests the part for some period of time. N-channel transistors can have a positive bias www.datasheetarchive.com/files/motorola/cdcsic2/web/techhelp/quality/bake.htm |
Motorola | 08/03/1998 | 13.38 Kb | HTM | bake.htm |
| along interfaces, to a nearby transistor. PMIC causes MOS transistors to leak and shifts their failing circuit transistor, are usually required to make a conclusive determination of the failure . Consider a case in which the gate oxide of an n-channel MOS transistor has been contaminated with sodium polysilicon gate and the silicon substrate. The CSIC microcontroller that contains this transistor passes operates or tests the part for some period of time. N-channel transistors can have a positive bias www.datasheetarchive.com/files/motorola/web/salesprt/quality/bake.htm |
Motorola | 10/02/1997 | 12.57 Kb | HTM | bake.htm |
| 5088WM NONE NO 10/23/99 General Description This CMOS device provides low cost tone from the standard DTMF frequencies is generated. An open-drain N-channel transistor provides a MUTE www.datasheetarchive.com/files/national/pf/tp5088.html |
National | 17/02/2005 | 6.46 Kb | HTML | tp5088.html |
| lambda/4 transmission line. This saves external components such as a switching transistor or an antenna product information may be retrieved at www.atmel-wm.com Press Contacts Udo Tillmann, Product Line Manager Tel: +49 7131 67-2636 Email: udo.tillmann@atmel-wm.com Veronique Sablereau, Marketing Communications Manager Tel: +33 1 30 60 70 68 Email: veronique.sablereau@atmel-wm.com ReaderÂ's Contact www.datasheetarchive.com/files/atmel/atmel/bluetooth/20010510.htm |
Atmel | 17/05/2001 | 7.09 Kb | HTM | 20010510.htm |
| NS DM74ALS273WM '74ALS32 74ALS32 74ALS32 74ALS32 ' IC, 74ALS32 74ALS32 74ALS32 74ALS32 QUAD 2-INPUT OR NS DM74ALS374WM '74ALS38 74ALS38 74ALS38 74ALS38 ' IC, 74ALS38 74ALS38 74ALS38 74ALS38 QUAD NAND O NS MM74HC4016WM '74HCT244 74HCT244 74HCT244 74HCT244 ' IC, 74HCT244 74HCT244 74HCT244 74HCT244 OCTAL TRISTATE HCT244 HCT244 HCT244 HCT244 OCTAL TRISTATE BUFFER NS MM74HCT244WM '74HCT 74HCT 74HCT 74HCT MM74HCT245WM '8259A ' IC, 82C59A-2 82C59A-2 82C59A-2 82C59A-2 CMOS Programmable Interrupt Ctlr www.datasheetarchive.com/download/83212864-549407ZC/demobd.zip (PARTS.INC) |
National | 29/04/1997 | 1334.54 Kb | ZIP | demobd.zip |