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| Abstract: V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 28 V. The transistor is , envelope with a moulded cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance , 4,2 mm. (7,5 kg cm) Mounting hole to have no burrs at either end. max.0,85 Nm De-burring must leave surface flat; do not chamfer or (8,5 kg cm) countersink either end of hole. When locking is ... | OCR Scan |
8 pages, |
T3309 bly92 431202036640 choke 3309 power transistor transistor 1971 BLY92A transistor rf cm 1104 BLY92A abstract |
| Abstract: V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 28 V. The transistor is , envelope with a moulded cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance , heatsink: max. 4,2 mm* (7,5 kg cm) Mounting hole to have no burrs at either end. max.0,85 Nm De-burring must leave surface flat; do not chamfer or (8,5 kg cm) countersink either end of hole. When locking ... | OCR Scan |
8 pages, |
TRANSISTOR D 1978 T3309 BLY92A 4312 020 36640 transistor rf m 1104 transistor m 1104 T-33- BLY92A abstract |
| Abstract: D RF out G1 RF in S C block C block 94 9296 Features D D D D Integrated , with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert 10 kW , 98.3 104.4 110.4 119.7 128.4 137.0 144.2 149.1 LOG MAG dB Â0.13 Â0.14 Â0.16 Â0.18 , Source Voltage TELEFUNKEN Semiconductors Rev. A1, 24-Apr-96 S913T/S913TR S913T/S913TR 80 CM Â Cross ... | Original |
7 pages, |
S913TR S913T S913T/S913TR S913T/S913TR abstract |
| Abstract: functionality. Rev. B | Page 5 of 16 80 90 AD8022 AD8022 TYPICAL PERFORMANCE CHARACTERISTICS 5 5 RF 402 4 4 VOUT RF = 715 VIN 2 3 VIN 2 50 56.2 50 (dB) � � RF = 402 � , Figure 4. Frequency Response vs. RF, G = +1, VS = � V, VIN = 63 mV p-p �1 �2 �V �4 �0V , Gain Flatness vs. Frequency, G = +2 140 0.4 0.3 VIN = 0.8V p-p � RF = 0 � 0.1 VIN , VIN = 0.05V p-p VOUT 453 01053-007 50 3 G = +2 RL = 500 G = +1, RF = 402 120 ... | Original |
16 pages, |
XFC-B AD9754 ADSL layout guide CURRENT TRANSFORMER fast responce DB10 folded cascode current mirror op amp transistor rf cm 1104 AD8022 AD8022 abstract |
| Abstract: 1 (dB) Data Sheet 5 402 4 VIN = 0.05V p-p VIN = 0.2V p-p RF 50 VOUT 50 VIN 50 RF = 715 3 2 1 (dB) VIN 50 453 VOUT 56.2 0 �����0.1 1 10 FREQUENCY (MHz) 100 RF = 402 RF = 0 , 500 500 Figure 4. Frequency Response vs. RF, G = +1, VS = � V, VIN = 63 mV p-p 0.4 0.3 0.2 0.1 , 120 100 G = +1, RF = 402 0 (dB) FREQUENCY (MHz) 0.1 80 60 40 20 0 G = +2, RF = 715 �1 , , RF = 0 2.00V 100 180 100ns INPUT FREQUENCY (Degrees) 90 0 10 0% OUTPUT ... | Original |
16 pages, |
receiver QAM schematic diagram AD8022 AD8022 abstract |
| Abstract: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT , Temperature Tstg -65 to +150 °C 2 Note Mounted on 1.08 cm Ã- 1.0 mm (t) glass epoxy PCB Because , Note 2 Note Mounted on 1.08 cm Ã- 1.0 mm (t) glass epoxy PCB ELECTRICAL CHARACTERISTICS (TA = , Note 1 RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Noise Figure , 0.655 0.648 0.639 0.636 -87.4 -95.4 -102.9 -110.4 -117.5 -124.7 -131.2 -137.7 -143.8 ... | Original |
16 pages, |
2SC5750-T1 2SC5750 transistor NEC 7812 NEC 7812 nec japan 7812 2SC5750 abstract |
| Abstract: voltage. RFC C block AGC VDD D G2 RF out RF in G1 C block S C block 94 9296 , 1 with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert , 76.2 Â47.41 81.6 Â47.72 89.3 Â47.55 98.3 Â47.07 104.4 Â46.96 110.4 Â46.72 119.7 Â45.93 , Document Number 85059 Rev. 3, 20-Jan-99 S913T/S913TR/S913TRW S913T/S913TR/S913TRW Vishay Telefunken 80 CM Â Cross ... | Original |
9 pages, |
w13 SMD S913TRW S913TR S913T w13 smd tuner S913T/S913TR/S913TRW S913T/S913TR/S913TRW abstract |
| Abstract: voltage. VDD D G2 RF out RF in G1 C block S C block 94 9296 Features D D D , transistor (inside of PLL), insert 10 kW collector resistor. 2 (8) TELEFUNKEN Semiconductors Rev. A2 , 76.8 75.0 72.9 71.2 69.8 68.5 67.8 68.8 70.0 71.0 72.9 76.2 81.6 89.3 98.3 104.4 110.4 , Semiconductors Rev. A2, 26-Mar-97 S913T/S913TR S913T/S913TR 80 CM Â Cross Modulation ( dB ) S 21 2 Â ... | Original |
8 pages, |
S913TR S913T S913T/S913TR S913T/S913TR abstract |
| Abstract: voltage. RFC C block AGC VDD D G2 RF out RF in G1 C block S C block 94 9296 , switching transistor (inside of PLL), insert 10 kW collector resistor. www.vishay.de · FaxBack , 98.3 Â47.07 104.4 Â46.96 110.4 Â46.72 119.7 Â45.93 128.4 Â44.91 137.0 Â43.76 144.2 Â42.39 , 85059 Rev. 3, 20-Jan-99 S913T/S913TR/S913TRW S913T/S913TR/S913TRW Vishay Telefunken 80 CM  Cross Modulation ( dB ... | Original |
9 pages, |
S913TRW S913TR S913T S913T/S913TR/S913TRW S913T/S913TR/S913TRW abstract |
| Abstract: Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 RFC C block AGC VDD(VDS) D G2 RF out RF in , open collector switching transistor (inside of PLL), insert 10 k collector resistor. Electrical AC , 75.8 -46.96 110.4 -0.95 -28.4 1100 -2.67 -72.8 3.96 71.9 -46.72 119.7 , Voltage ( V ) 95 10776 Figure 7. Transducer Gain vs. Gate 2 Source Voltage CM Â Cross Modulation ... | Original |
10 pages, |
S913TRW S913TR S913T SOT-143 MARKING 557 S913T abstract |
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| -12-26 Remote Video Surveillance (RVS)Reference Design 2003-12-26 RF & Microwave Power transistors and RF power modules 2002-08-15 RF & Microwave Power Transistors General 1998-07-01 RF POWER TRANSISTORS & MODULES For All Cellular Standards RF transmitting transistor and power amplifier fundamentals 1998-03-01 RF transmitting transistor and power amplifier fundamentals 1998-03-01 RF transmitting transistor and power amplifier fundamentals 1998-03-01 RF transmitting transistor and power amplifier www.datasheetarchive.com/files/philips/support/index-v1.html |
Philips | 16/06/2005 | 98.62 Kb | HTML | index-v1.html |
| HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL213 BUL213 BUL213 BUL213 1021 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL216 BUL216 BUL216 BUL216 1022 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL381 BUL381 BUL381 BUL381 BUL382 BUL382 BUL382 BUL382 1025 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL416 BUL416 BUL416 BUL416 1026 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL510 BUL510 BUL510 BUL510 1027 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL57 BUL57 BUL57 BUL57 1028 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL67 BUL67 BUL67 BUL67 1029 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL810 BUL810 BUL810 BUL810 1033 SUBSCRIBER www.datasheetarchive.com/files/stmicroelectronics/stonline/db/psearch-v1.txt |
STMicroelectronics | 20/10/2000 | 236.22 Kb | TXT | psearch-v1.txt |
| 1020 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL213 BUL213 BUL213 BUL213 1021 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL216 BUL216 BUL216 BUL216 1022 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL381 BUL381 BUL381 BUL381 BUL382 BUL382 BUL382 BUL382 1025 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL416 BUL416 BUL416 BUL416 1026 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL510 BUL510 BUL510 BUL510 1027 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL57 BUL57 BUL57 BUL57 BUL57FP BUL57FP BUL57FP BUL57FP 1028 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL67 BUL67 BUL67 BUL67 1029 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL810 BUL810 BUL810 BUL810 1030 HIGH VOLTAGE FAST www.datasheetarchive.com/files/stmicroelectronics/stonline/db/psearch-v5.txt |
STMicroelectronics | 11/06/1999 | 195.53 Kb | TXT | psearch-v5.txt |
| PANEL SCAN DRIVER STV7697A STV7697A STV7697A STV7697A 2841 UHF PULSED APPLICATIONS RF & MICROWAVE TRANSISTORS SD1565 SD1565 SD1565 SD1565 5352 SILICON APPLICATIONS RF & MICROWAVE TRANSISTORS SD1660 SD1660 SD1660 SD1660 5355 POWER LINEAR AND SWITCHING APPLICATIONS BD905FI BD905FI BD905FI BD905FI 6084 N FLASH MEMORY M28W160B M28W160B M28W160B M28W160B M28W160T M28W160T M28W160T M28W160T 2845 800/900 MHZ APPLICATIONS RF & MICROWAVE TRANSISTORS SD1680 SD1680 SD1680 SD1680 5356 PUMP ST75C520 ST75C520 ST75C520 ST75C520 2846 HF SSB APPLICATIONS RF & MICROWAVE TRANSISTORS SD1726 SD1726 SD1726 SD1726 THA15 THA15 THA15 THA15 5357 HIGH VOLTAGE NPN NE06L-1 NE06L-1 NE06L-1 NE06L-1 2847 HF SSB APPLICATIONS RF & MICROWAVE TRANSISTORS SD1727 SD1727 SD1727 SD1727 THX15 THX15 THX15 THX15 5358 SILICON NPN SWITCHING www.datasheetarchive.com/files/stmicroelectronics/stonline/db/psearch-v3.txt |
STMicroelectronics | 30/03/1999 | 189.32 Kb | TXT | psearch-v3.txt |
| VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL213 BUL213 BUL213 BUL213 1021 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL216 BUL216 BUL216 BUL216 1022 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL381 BUL381 BUL381 BUL381 BUL382 BUL382 BUL382 BUL382 1025 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL416 BUL416 BUL416 BUL416 1026 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL510 BUL510 BUL510 BUL510 1027 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL57 BUL57 BUL57 BUL57 1028 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL67 BUL67 BUL67 BUL67 1029 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL810 BUL810 BUL810 BUL810 1033 SUBSCRIBER LINE INTERFACE www.datasheetarchive.com/files/stmicroelectronics/stonline/db/psearch.txt |
STMicroelectronics | 02/02/2001 | 240.03 Kb | TXT | psearch.txt |
| VOLTAGES OF +/-5VDC. * * THIS SIMPLIFIED CIRCUIT USES ACTUAL TRANSISTORS INSTEAD OF * MATHEMATICAL ESPECIALLY VALUABLE TO DESIGNERS OF VIDEO AND RF SYSTEMS. * * THIS SIMPLIFIED CIRCUIT IS BEING SUPPLIED 1.0E-12 0E-12 0E-12 0E-12 * COMMON MODE INPUT CAPACITANCE C1CM 1 99 1.5E-12 5E-12 5E-12 5E-12 C2CM 2 99 1.5E-12 5E-12 5E-12 5E-12 * .MODEL DX D 3 4 5.0E5 * DIFF INPUT CAPACITANCE CDIF 1 2 1.0E-12 0E-12 0E-12 0E-12 * COMMON MODE INPUT CAPACITANCE C1CM 1 99 1.5E-12 5E-12 5E-12 5E-12 C2CM 2 99 1.5E-12 5E-12 5E-12 5E-12 * .MODEL DX D(IS=800.0E-18 0E-18 0E-18 0E-18) .MODEL QX PNP(IS=800.0E-18 0E-18 0E-18 0E-18 BF=466 www.datasheetarchive.com/files/spicemodels/misc/modelos/spice_complete/bbopa.lib |
Spice Models | 18/04/2010 | 120.45 Kb | LIB | bbopa.lib |
| TRANSISTOR LOW VOLTAGE (< 160 V) COMMODITIES Power Bipolar 228 MJ4502 MJ4502 MJ4502 MJ4502 2N3021 2N3021 2N3021 2N3021 Nearest Preferred LOW Gold Standard COMPLEMENTARY SILICON POWER TRANSISTORS LOW VOLTAGE (< 160 V) COMMODITIES Power Bipolar 228 4079 2N3055 2N3055 2N3055 2N3055 2N3055 2N3055 2N3055 2N3055 Replacement Gold Standard Motorola/ST COMPLEMENTARY SILICON POWER TRANSISTORS Standard COMPLEMENTARY SILICON POWER TRANSISTORS LOW VOLTAGE (< 160 V) COMMODITIES Power Bipolar 228 4079 2N3055 2N3055 2N3055 2N3055 2N3055A 2N3055A 2N3055A 2N3055A Nearest Preferred Gold Standard Motorola COMPLEMENTARY SILICON POWER TRANSISTORS LOW www.datasheetarchive.com/files/stmicroelectronics/stonline/db/xref-v2.txt |
STMicroelectronics | 11/06/1999 | 1361.18 Kb | TXT | xref-v2.txt |
| simplified circuit model * at the transistor level. * * This disk is complemented by the application the 200nsec * switching speed of the actual switching transistors in * the ACF2101 ACF2101 ACF2101 ACF2101 CAPACITANCE CDIF 1 2 3.0E-12 0E-12 0E-12 0E-12 * COMMON MODE INPUT CAPACITANCE C1CM 1 99 1.5E-12 5E-12 5E-12 5E-12 C2CM 2 99 1.5E-12 5E-12 5E-12 5E-12 CDIF 1 2 3.0E-12 0E-12 0E-12 0E-12 * COMMON MODE INPUT CAPACITANCE C1CM 1 99 1.5E-12 5E-12 5E-12 5E-12 C2CM 2 99 1.5E-12 5E-12 5E-12 5E-12 * INPUT CAPACITANCE CDIF 1 2 3.0E-12 0E-12 0E-12 0E-12 * COMMON MODE INPUT CAPACITANCE C1CM 1 99 1.5E-12 5E-12 5E-12 5E-12 C2CM 2 99 1.5E-12 5E-12 5E-12 5E-12 www.datasheetarchive.com/files/spicemodels/misc/schematics_layouts/burr_brn.lib |
Spice Models | 17/06/1998 | 446.61 Kb | LIB | burr_brn.lib |
| simplified circuit model * at the transistor level. * * This library is complemented by the application the 200nsec * switching speed of the actual switching transistors in * the ACF2101 ACF2101 ACF2101 ACF2101 CAPACITANCE CDIF 1 2 3.0E-12 0E-12 0E-12 0E-12 * COMMON MODE INPUT CAPACITANCE C1CM 1 99 1.5E-12 5E-12 5E-12 5E-12 C2CM 2 99 1.5E-12 5E-12 5E-12 5E-12 CDIF 1 2 3.0E-12 0E-12 0E-12 0E-12 * COMMON MODE INPUT CAPACITANCE C1CM 1 99 1.5E-12 5E-12 5E-12 5E-12 C2CM 2 99 1.5E-12 5E-12 5E-12 5E-12 * INPUT CAPACITANCE CDIF 1 2 3.0E-12 0E-12 0E-12 0E-12 * COMMON MODE INPUT CAPACITANCE C1CM 1 99 1.5E-12 5E-12 5E-12 5E-12 C2CM 2 99 1.5E-12 5E-12 5E-12 5E-12 www.datasheetarchive.com/files/spicemodels/misc/burr_brn.lib |
Spice Models | 04/09/2012 | 503.79 Kb | LIB | burr_brn.lib |
| simplified circuit model * at the transistor level. * * This library is complemented by the application the 200nsec * switching speed of the actual switching transistors in * the ACF2101 ACF2101 ACF2101 ACF2101 CAPACITANCE CDIF 1 2 3.0E-12 0E-12 0E-12 0E-12 * COMMON MODE INPUT CAPACITANCE C1CM 1 99 1.5E-12 5E-12 5E-12 5E-12 C2CM 2 99 1.5E-12 5E-12 5E-12 5E-12 CDIF 1 2 3.0E-12 0E-12 0E-12 0E-12 * COMMON MODE INPUT CAPACITANCE C1CM 1 99 1.5E-12 5E-12 5E-12 5E-12 C2CM 2 99 1.5E-12 5E-12 5E-12 5E-12 * INPUT CAPACITANCE CDIF 1 2 3.0E-12 0E-12 0E-12 0E-12 * COMMON MODE INPUT CAPACITANCE C1CM 1 99 1.5E-12 5E-12 5E-12 5E-12 C2CM 2 99 1.5E-12 5E-12 5E-12 5E-12 www.datasheetarchive.com/files/spicemodels/misc/modelos/spice_complete/burr-brn.lib |
Spice Models | 18/04/2010 | 503.36 Kb | LIB | burr-brn.lib |