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transistor rf cm 1104

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: -33-ö? V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 28 V. The transistor is , envelope with a moulded cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance , clearance hole in heatsink: max. 4,2 mm* (7,5 kg cm) Mounting hole to have no burrs at either end. max.0,85 Nm De-burring must leave surface flat; do not chamfer or (8,5 kg cm) countersink either end of ... OCR Scan
datasheet

8 pages,
209.3 Kb

TRANSISTOR D 1978 transistor 1971 T3309 4312 020 36640 1102 transistor transistor m 1104 transistor rf m 1104 BLY92A transistor rf cm 1104 T-33- TEXT
datasheet frame
Abstract: -33-Of V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 28 V. The transistor is , envelope with a moulded cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance , . 4,2 mm. (7,5 kg cm) Mounting hole to have no burrs at either end. max.0,85 Nm De-burring must leave surface flat; do not chamfer or (8,5 kg cm) countersink either end of hole. When locking is ... OCR Scan
datasheet

8 pages,
369.74 Kb

T3309 431202036640 choke transistor c 1971 bly92 PHILIPS FW 36 20 transistor VHF 1104 3309 power transistor transistor 1971 BLY92A transistor rf cm 1104 TEXT
datasheet frame
Abstract: semiconductor is an inex pensive low-noise silicon bipolar transistor in the SOT-143 surface-mountable package. For buffers, one version uses an HP AT-42086 AT-42086 medium-power bipolar transistor and the other uses an HP , available in low-cost plastic packaging, and HP also offers a surface-mountable versions of the MSA-1104 , feedback used to produce oscillation. RF power from the oscillator can be obtained across a resistive load , network XR , in series with the base of the transistor and ground. This configuration offers a simple ... OCR Scan
datasheet

8 pages,
791.53 Kb

vco Avantek AVANTEK MSA-1105 Avantek rf amplifier sc Avantek rf OSCILLATORS transistor c 2335 AVANTEK transistor MSA1104 Hewlett-Packard application note 937 D2025 MSA-1104 MSA1104 AVANTEK transistor rf cm 1104 AN-S014 AN-S014 AN-S014 hp_ at41411 Transistor D2025 transistor C1000 USA TEXT
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Abstract: NPN SILICON RF TRANSISTOR NE678M04 NE678M04 / 2SC5753 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER , 6.0 2.0 100 205 150 65 to +150 Unit V V V mA mW C C Tj Tstg Note Mounted on 1.08 cm 1.0 mm , Rth j-a Note Value 600 Unit C/W Note Mounted on 1.08 cm 1.0 mm (t) glass epoxy PCB 2 , Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise , 1.765 1.580 21.54 18.43 16.73 15.47 14.56 13.82 13.22 12.74 12.31 11.98 11.67 11.41 11.21 11.04 10.90 ... California Eastern Laboratories
Original
datasheet

16 pages,
228.33 Kb

ne678m04-a 2SC5753 NE678M04 TEXT
datasheet frame
Abstract: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT , Temperature Tstg -65 to +150 °C 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB Because , Note 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB ELECTRICAL CHARACTERISTICS (TA = , Note 1 RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Noise Figure , 0.655 0.648 0.639 0.636 -87.4 -95.4 -102.9 -110.4 -117.5 -124.7 -131.2 -137.7 -143.8 ... NEC
Original
datasheet

16 pages,
85.03 Kb

2SC5750 TRANSISTOR IC 18751 R54 Transistor P15656EJ1V0DS00 2SC5750-T1 7812 4pin k 3531 transistor 7812 nec transistor NEC 7812 NEC 7812 nec japan 7812 TEXT
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Abstract: D RF out G1 RF in S C block C block 94 9296 Features D D D D Integrated , with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert 10 kW , 89.3 98.3 104.4 110.4 119.7 128.4 137.0 144.2 149.1 LOG MAG dB ­0.13 ­0.14 ­0.16 ­0.18 , Source Voltage TELEFUNKEN Semiconductors Rev. A1, 24-Apr-96 S913T/S913TR S913T/S913TR 80 CM ­ Cross ... Temic Semiconductors
Original
datasheet

7 pages,
100.57 Kb

S913TR S913T transistor rf cm 1104 a1 4741 2 a1 4741 5 S913T/S913TR TEXT
datasheet frame
Abstract: VDD D G2 RF out RF in G1 C block S C block 94 9296 Features D D D D , with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert 10 kW , 76.8 75.0 72.9 71.2 69.8 68.5 67.8 68.8 70.0 71.0 72.9 76.2 81.6 89.3 98.3 104.4 110.4 , TELEFUNKEN Semiconductors Rev. A1, 04-Jun-97 S913TRW S913TRW 80 CM ­ Cross Modulation ( dB ) S 21 2 ­ ... Temic Semiconductors
Original
datasheet

8 pages,
136.61 Kb

w13 smd transistor S913TRW 731 smd TEXT
datasheet frame
Abstract: voltage. VDD D G2 RF out RF in G1 C block S C block 94 9296 Features D D D , open collector switching transistor (inside of PLL), insert 10 kW collector resistor. 2 (8 , 98.3 104.4 110.4 119.7 128.4 137.0 144.2 149.1 ­0.13 ­0.14 ­0.16 ­0.18 ­0.20 ­0.24 , TELEFUNKEN Semiconductors Rev. A2, 26-Mar-97 S913T/S913TR S913T/S913TR 80 CM ­ Cross Modulation ( dB ) S 21 2 ... Temic Semiconductors
Original
datasheet

8 pages,
167.45 Kb

S913TR S913T transistor smd marking 431 S913T/S913TR TEXT
datasheet frame
Abstract: NPN Silicon RF Transistor BFP 93A · For broadband amplifiers and oscillators up to 2 GHz at , 00 LO co 05 LO CM CM r 05 cp co 00 LO ^ - co rf co lO h- CM cp co co 05 co co có CM CM CM y-1 CM LO O , 144.6 138.5 133.5 121.8 110.4 MAG 32.88 25.24 20.09 16.54 14.17 11.25 9.04 7.53 6.45 5.66 5.11 4.61 3.82 , J5 0 90° - j5 0 - 90° Siemens 493 BFP93A BFP93A ÍT w z < h- © o Tf CM LO h' í O o> LO o o h- co co o co j - CM O o CM cd LO cd co LO h-1 y-Z cd co LO CO CO LO ó T LO m LO LO lO LO LO ... OCR Scan
datasheet

18 pages,
360.5 Kb

SL 1424 11p transistor rf cm 1104 TEXT
datasheet frame
Abstract: . DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER , 150 °C Storage Temperature Tstg -65 to +150 °C 2 Note Mounted on 1.08 cm × 1.0 mm , Value Unit 600 °C/W Note 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB , 55 - % hFE DC Current Gain Note 1 RF Characteristics Gain Bandwidth Product fT , POWER 25 20 VCE = 2.8 V f = 1.8 GHz ICq = 10 mA (RF OFF) 250 Pout 200 150 15 GP ... Renesas Electronics
Original
datasheet

22 pages,
228.06 Kb

zo 607 nec k 813 2SC5753 2SC5753-T2 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
( < 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 2N3202 2N3202 Nearest Preferred SILICON NPN TRANSISTOR NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 MJ802 MJ802 2N3232 2N3232 Nearest NPN SILICON TRANSISTOR MEDIUM and HIGH VOLTAGE ( > 150 V) SWITCHING TRANSISTORS Power Bipolar 227 2N3719 2N3719 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 2N3720 2N3720 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V
/datasheets/files/stmicroelectronics/stonline/db/xref-v4.txt
STMicroelectronics 31/01/2001 1362.78 Kb TXT xref-v4.txt
V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 2N3202 2N3202 Nearest Preferred SILICON NPN TRANSISTOR LOW TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 MJ802 MJ802 2N3232 2N3232 Nearest Preferred LOW CURRENT NPN SILICON TRANSISTOR MEDIUM and HIGH VOLTAGE ( > 150 V) SWITCHING TRANSISTORS Power Bipolar Power Bipolar 228 4204 BSS44 BSS44 2N3719 2N3719 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 2N3720 2N3720 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( <
/datasheets/files/stmicroelectronics/stonline/db/xref-v1.txt
STMicroelectronics 20/10/2000 1859.39 Kb TXT xref-v1.txt
( < 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 2N3202 2N3202 Nearest Preferred SILICON NPN TRANSISTOR NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 MJ802 MJ802 2N3232 2N3232 Nearest NPN SILICON TRANSISTOR MEDIUM and HIGH VOLTAGE ( > 150 V) SWITCHING TRANSISTORS Power Bipolar 227 2N3719 2N3719 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 2N3720 2N3720 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V
/datasheets/files/stmicroelectronics/stonline/db/xref-v3.txt
STMicroelectronics 20/10/2000 1842.28 Kb TXT xref-v3.txt
Parametrics TDA8060TS/C2 TDA8060TS/C2 Supply current mA 80 Direct conversion QPSK demodulation Variable gain on RF input dB BCV65 BCV65 NPN/PNP General Purpose Transistor .SUBCKT BCV65 BCV65 1 2 3 4 Q1 1 2 4 BC847B BC847B Q2 3 2 4 134 1 0 /models
/datasheets/files/philips/search/docindex-v2.txt
Philips 14/02/2002 998.47 Kb TXT docindex-v2.txt
No abstract text available
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NXP 23/10/2012 16125.31 Kb ZIP microwave_office_design_kit_rf_smal_signal_products.zip
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NEDIS 22/02/2001 1894.94 Kb ZIP price-04.zip
No abstract text available
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NEDIS 26/02/2001 1872.34 Kb ZIP price-07.zip
No abstract text available
/download/48664731-299145ZC/bae65022linux.tgz
Kaleidoscope 22/08/2005 11421.08 Kb TGZ bae65022linux.tgz
No abstract text available
/download/59539157-592504ZC/price-11.zip ()
NEDIS 28/02/2001 1026.63 Kb ZIP price-11.zip
No abstract text available
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NEDIS 28/02/2001 1026.63 Kb ZIP price-13.zip