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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
CDCLVC1104PWR Texas Instruments Low Jitter, 1:4 LVCMOS Fan-out Clock Buffer 8-TSSOP -40 to 85 visit Texas Instruments Buy
AFE1104EG4 Texas Instruments DATACOM, DIGITAL SLIC, PDSO48, GREEN, PLASTIC, SSOP-48 visit Texas Instruments

transistor rf cm 1104

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transistor rf cm 1104

Abstract: BLY92A -33-ö? V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 28 V. The transistor is , envelope with a moulded cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance , clearance hole in heatsink: max. 4,2 mm* (7,5 kg cm) Mounting hole to have no burrs at either end. max.0,85 Nm De-burring must leave surface flat; do not chamfer or (8,5 kg cm) countersink either end of
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transistor rf cm 1104

Abstract: BLY92A -33-Of V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 28 V. The transistor is , envelope with a moulded cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance , . 4,2 mm. (7,5 kg cm) Mounting hole to have no burrs at either end. max.0,85 Nm De-burring must leave surface flat; do not chamfer or (8,5 kg cm) countersink either end of hole. When locking is
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transistor C1000 USA

Abstract: Transistor D2025 semiconductor is an inex pensive low-noise silicon bipolar transistor in the SOT-143 surface-mountable package. For buffers, one version uses an HP AT-42086 medium-power bipolar transistor and the other uses an HP , available in low-cost plastic packaging, and HP also offers a surface-mountable versions of the MSA-1104 , feedback used to produce oscillation. RF power from the oscillator can be obtained across a resistive load , network XR , in series with the base of the transistor and ground. This configuration offers a simple
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AN-S014 MSA-1104 transistor C1000 USA Transistor D2025 hp_ at41411 transistor rf cm 1104 MSA1104 AVANTEK AT-41411 BB405B MSA-1105 AT-41411/AT-42086

ne678m04-a

Abstract: 2SC5753 NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER , 6.0 2.0 100 205 150 65 to +150 Unit V V V mA mW C C Tj Tstg Note Mounted on 1.08 cm 1.0 mm , Rth j-a Note Value 600 Unit C/W Note Mounted on 1.08 cm 1.0 mm (t) glass epoxy PCB 2 , Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise , 1.765 1.580 21.54 18.43 16.73 15.47 14.56 13.82 13.22 12.74 12.31 11.98 11.67 11.41 11.21 11.04 10.90
California Eastern Laboratories
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ne678m04-a NE678M04-A 2SC5753-A NE678M04-T2-A 2SC5753-T2-A P15659EJ1V0DS00 P15659EJ1V0DS

nec japan 7812

Abstract: NEC 7812 DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT , Temperature Tstg -65 to +150 °C 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB Because , Note 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB ELECTRICAL CHARACTERISTICS (TA = , Note 1 RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Noise Figure , 0.655 0.648 0.639 0.636 -87.4 -95.4 -102.9 -110.4 -117.5 -124.7 -131.2 -137.7 -143.8
NEC
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2SC5750-T1 nec japan 7812 NEC 7812 transistor NEC 7812 7812 nec k 3531 transistor R54 Transistor

a1 4741 5

Abstract: a1 4741 2 D RF out G1 RF in S C block C block 94 9296 Features D D D D Integrated , with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert 10 kW , 89.3 98.3 104.4 110.4 119.7 128.4 137.0 144.2 149.1 LOG MAG dB ­0.13 ­0.14 ­0.16 ­0.18 , Source Voltage TELEFUNKEN Semiconductors Rev. A1, 24-Apr-96 S913T/S913TR 80 CM ­ Cross
Temic Semiconductors
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S913T S913TR a1 4741 5 a1 4741 2 88/540/EEC 91/690/EEC D-74025

w13 smd transistor

Abstract: 731 smd VDD D G2 RF out RF in G1 C block S C block 94 9296 Features D D D D , with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert 10 kW , 76.8 75.0 72.9 71.2 69.8 68.5 67.8 68.8 70.0 71.0 72.9 76.2 81.6 89.3 98.3 104.4 110.4 , TELEFUNKEN Semiconductors Rev. A1, 04-Jun-97 S913TRW 80 CM ­ Cross Modulation ( dB ) S 21 2 ­
Temic Semiconductors
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w13 smd transistor 731 smd

transistor smd marking 431

Abstract: S913T voltage. VDD D G2 RF out RF in G1 C block S C block 94 9296 Features D D D , open collector switching transistor (inside of PLL), insert 10 kW collector resistor. 2 (8 , 98.3 104.4 110.4 119.7 128.4 137.0 144.2 149.1 ­0.13 ­0.14 ­0.16 ­0.18 ­0.20 ­0.24 , TELEFUNKEN Semiconductors Rev. A2, 26-Mar-97 S913T/S913TR 80 CM ­ Cross Modulation ( dB ) S 21 2
Temic Semiconductors
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transistor smd marking 431

transistor rf cm 1104

Abstract: SL 1424 11p NPN Silicon RF Transistor BFP 93A · For broadband amplifiers and oscillators up to 2 GHz at , 00 LO co 05 LO CM CM r 05 cp co 00 LO ^ - co rf co lO h- CM cp co co 05 co co có CM CM CM y-1 CM LO O , 144.6 138.5 133.5 121.8 110.4 MAG 32.88 25.24 20.09 16.54 14.17 11.25 9.04 7.53 6.45 5.66 5.11 4.61 3.82 , J5 0 90° - j5 0 - 90° Siemens 493 BFP93A ÍT w z < h- © o Tf CM LO h' í O o> LO o o h- co co o co j - CM O o CM cd LO cd co LO h-1 y-Z cd co LO CO CO LO ó T LO m LO LO lO LO LO
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SL 1424 11p

2SC5753-T2

Abstract: 2SC5753 . DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER , 150 °C Storage Temperature Tstg -65 to +150 °C 2 Note Mounted on 1.08 cm × 1.0 mm , Value Unit 600 °C/W Note 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB , 55 - % hFE DC Current Gain Note 1 RF Characteristics Gain Bandwidth Product fT , POWER 25 20 VCE = 2.8 V f = 1.8 GHz ICq = 10 mA (RF OFF) 250 Pout 200 150 15 GP
Renesas Electronics
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2SC5753-T2 nec k 813 zo 607

nec japan 7812

Abstract: transistor NEC 7812 . DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER , to +150 °C 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB Because this product uses , 1.08 cm × 1.0 mm (t) glass epoxy PCB ELECTRICAL CHARACTERISTICS (TA = +25°C) ° Parameter Symbol , 8 mA, f = 1.8 GHz, Pin = 1 dBm - 50 - % hFE DC Current Gain Note 1 RF , -95.4 -102.9 -110.4 -117.5 -124.7 -131.2 -137.7 -143.8 -150.3 2.583 2.485 2.376 2.292
Renesas Electronics
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2SC5753

Abstract: p1565 DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT , Tj 150 °C Storage Temperature Tstg -65 to +150 °C 2 Note Mounted on 1.08 cm × , Resistance Rth j-a Value Unit 600 °C/W Note 2 Note Mounted on 1.08 cm × 1.0 mm (t , , Pin = 7 dBm - 55 - % hFE DC Current Gain Note 1 RF Characteristics Gain , POWER 25 20 VCE = 2.8 V f = 1.8 GHz ICq = 10 mA (RF OFF) 250 Pout 200 150 15 GP
NEC
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p1565 RF transistor

2SC5599

Abstract: marking TV DATA SHEET NPN SILICON RF TRANSISTOR 2SC5599 NPN SILICON RF TRANSISTOR FOR LOW NOISE · , to +150 °C 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy substrate Because this , GHz 5.5 6.5 ­ GHz Note 1 hFE DC Current Gain RF Characteristics Gain Bandwidth , 10 ­30 ­20 50 VCE = 2 V, f = 2 GHz Icq = 5 mA (RF OFF) Collector Current IC (mA) Output Power Pout (dBm) VCE = 1 V, f = 2 GHz Icq = 5 mA (RF OFF) 0 10 Input Power Pin (dBm
NEC
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2SC5599-T1 marking TV transistor 2SC5599

598 479

Abstract: 2SC5746 DATA SHEET NPN SILICON RF TRANSISTOR 2SC5746 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY , Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB Because this product uses high-frequency technology , V, IE = 0 mA, f = 1 MHz 0.65 0.75 0.85 pF hFE DC Current Gain Note 1 RF , 0.644 0.651 0.649 -87.5 -91.6 -95.7 -99.4 -103.0 -106.8 -110.4 -113.7 -117.0 -120.3 3.0 , 0.652 0.624 0.604 0.594 0.590 0.589 0.592 -48.9 -85.5 -110.4 -128.3 -141.1 -151.1 -158.8
NEC
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2SC5746-T3 598 479 marking y5 PU1000 PU10007EJ02V0DS
Abstract: Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5746 NPN SILICON RF TRANSISTOR FOR , cm × 1.0 mm (t) glass epoxy PCB Because this product uses high-frequency technology, avoid , Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product , -91.6 -95.7 -99.4 -103.0 -106.8 -110.4 -113.7 -117.0 -120.3 -123.9 -158.2 167.3 0.1 0.2 0.3 0.4 0.5 , Frequency (GHz) MAG. S11 ANG. (deg.) -48.9 -85.5 -110.4 -128.3 -141.1 -151.1 -158.8 -165.1 -170.5 -175.5 NEC
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Abstract: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5746 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY , 100 140 150 -65 to +150 Unit V V V mA mW °C °C Tj Tstg 2 Note Mounted on 1.08 cm × 1.0 mm (t , Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer , -60.2 -64.0 -67.8 -71.7 -75.7 -79.8 -83.7 -87.5 -91.6 -95.7 -99.4 -103.0 -106.8 -110.4 -113.7 -117.0 , 2SC5746 VCE = 2 V, IC = 5 mA, ZO = 50 Frequency (GHz) MAG. S11 ANG. (deg.) -48.9 -85.5 -110.4 -128.3 NEC
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PU10007EJ01V0DS

2N7594

Abstract: 2N7588T3 , FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON , , enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor. Two , Pre-irradiation limits R&F Min Max Post-irradiation limits R&F Min Max Unit Subgroup 1 Not , IDSS 10 10 uA dc 0.855 1.104 1.340 1.824 1/ 2/ 3/ 4/ 4011 Bias condition C, VGS = 0; ID = ID1 4.0 2.0 V dc V dc V dc V dc 4.0 0.855 1.104 1.340 1.824 V dc
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2N7588T3 2N7590T3 IRHYS67130CM IRHYS67230CM 2N7594 2n7588 2N759 MIL-PRF-19500/755 2N7592T3 2N7594T3 MIL-PRF-19500

p1565

Abstract: 2SC5751 NPN SILICON RF TRANSISTOR NE677M04 / 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER , Ratings 9.0 6.0 2.0 50 205 150 65 to +150 Unit V V V mA mW C C Note Mounted on 1.08 cm 1.0 mm (t , Value 600 Unit C/W Note Mounted on 1.08 cm 1.0 mm (t) glass epoxy PCB 2 ELECTRICAL , Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer , 0.627 0.674 0.734 0.781 0.848 0.901 0.975 1.024 1.104 1.131 1.193 1.230 1.288 1.319 1.346 1.329 1.284
California Eastern Laboratories
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NE677M04-A 2SC5751-A NE677M04-T2-A 2SC5751-T2-A P15657EJ1V0DS00 P15657EJ1V0DS

schematic circuit diagram adsl modem board

Abstract: receiver QAM schematic diagram PERFORMANCE CHARACTERISTICS 5 4 3 2 1 (dB) Data Sheet 5 402 4 VIN = 0.05V p-p VIN = 0.2V p-p RF 50 VOUT 50 VIN 50 RF = 715 3 2 1 (dB) VIN 50 453 VOUT 56.2 0 ­1 ­2 ­3 ­4 ­5 0.1 1 10 FREQUENCY (MHz) 100 RF = 402 RF = 0 01053-004 0 ­1 ­2 ­3 ­4 ­5 0.1 VIN = 0.8V p-p VIN = 0.4V p-p 1 10 FREQUENCY (MHz) 100 01053-007 VIN = 2.0V p-p 500 500 Figure 4. Frequency Response vs. RF, G = , 8. Frequency Response vs. Capacitive Load; CL = 0 pF and 50 pF; RS = 0 140 120 100 G = +1, RF =
Analog Devices
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schematic circuit diagram adsl modem board receiver QAM schematic diagram AD8022 MS-012-AA 10-07-2009-B MO-187-AA AD8022AR AD8022ARZ

w13 smd transistor

Abstract: marking 557 SOT143 19216 Electrostatic sensitive device. Observe precautions for handling. C block AGC RF in C block G2 G1 S D RFC VDD(VDS) RF out C block 94 9296 Mechanical Data Typ: S913T Case: SOT , switching transistor (inside of PLL), insert 10 k collector resistor. Electrical AC Characteristics Tamb , 72.9 76.2 81.6 89.3 98.3 104.4 110.4 119.7 128.4 137.0 144.2 149.1 -0.13 -0.14 -0.16 -0.18 -0.20 -0.24 , ) Figure 7. Transducer Gain vs. Gate 2 Source Voltage 80 CM ­ Cross Modulation ( dB ) Pin = ­20 dBm
Vishay Semiconductors
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marking 557 SOT143 smd transistor marking j5 SOT-143 MARKING 557 557 sot-143 MARKING marking w13 w13 smd tuner S913R
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