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CA3083H Intersil Corporation TRANSISTOR 5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal ri Buy
HFA3134IH Intersil Corporation TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal ri Buy
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transistor rf cm 1104

Catalog Datasheet Results Type PDF Document Tags
Abstract: V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 28 V. The transistor is , envelope with a moulded cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance , 4,2 mm. (7,5 kg cm) Mounting hole to have no burrs at either end. max.0,85 Nm De-burring must leave surface flat; do not chamfer or (8,5 kg cm) countersink either end of hole. When locking is ... OCR Scan
datasheet

8 pages,
369.74 Kb

transistor c 1971 T3309 PHILIPS FW 36 20 bly92 431202036640 choke 3309 power transistor transistor 1971 BLY92A transistor rf cm 1104 datasheet abstract
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Abstract: V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 28 V. The transistor is , envelope with a moulded cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance , heatsink: max. 4,2 mm* (7,5 kg cm) Mounting hole to have no burrs at either end. max.0,85 Nm De-burring must leave surface flat; do not chamfer or (8,5 kg cm) countersink either end of hole. When locking ... OCR Scan
datasheet

8 pages,
209.3 Kb

TRANSISTOR D 1978 transistor 1971 T3309 4312 020 36640 1102 transistor transistor m 1104 transistor rf m 1104 BLY92A transistor rf cm 1104 datasheet abstract
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Abstract: semiconductor is an inex pensive low-noise silicon bipolar transistor in the SOT-143 surface-mountable package. For buffers, one version uses an HP AT-42086 AT-42086 medium-power bipolar transistor and the other uses an HP , low-cost plastic packaging, and HP also offers a surface-mountable versions of the MSA-1104 that is , produce oscillation. RF power from the oscillator can be obtained across a resistive load in series with , XR , in series with the base of the transistor and ground. This configuration offers a simple biasing ... OCR Scan
datasheet

8 pages,
791.53 Kb

vco Avantek Avantek rf OSCILLATORS hp_ at41411 transistor c 2335 transistor rf cm 1104 AN-S014 MSA-1104 Transistor D2025 D2025 transistor C1000 USA AN-S014 abstract
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Abstract: NPN Silicon RF Transistor BFP 93A · For broadband amplifiers and oscillators up to 2 GHz at , 00 LO co 05 LO CM CM r 05 cp co 00 LO ^ - co rf co lO h- CM cp co co 05 co co có CM CM CM y-1 CM LO O , 144.6 138.5 133.5 121.8 110.4 MAG 32.88 25.24 20.09 16.54 14.17 11.25 9.04 7.53 6.45 5.66 5.11 4.61 3.82 , J5 0 90° - j5 0 - 90° Siemens 493 BFP93A BFP93A ÍT w z < h- © o Tf CM LO h' í O o> LO o o h- co co o co j - CM O o CM cd LO cd co LO h-1 y-Z cd co LO CO CO LO ó T LO m LO LO lO LO LO ... OCR Scan
datasheet

18 pages,
360.5 Kb

transistor rf cm 1104 datasheet abstract
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Abstract: NPN Silicon RF Transistor BFR 193 · For low-noise, high-gain am plifiers up to 2 GHz · For , oS1 < 9 - 00 0 Tf o> in CO CO 0 ó ' 00 CD CVJ 0 CD 00 CO CD 00 CM CO 0 CO 05 r -. CD m in T f *3r - T- T - TCM T- T- O d O d O O 0 0 m h - 00 0 in f"CO CM CM CM CM CM 0 t- T- r , 05 CM 05 CO CD 05 jS CM CO CO CO CO CM y_! d ... OCR Scan
datasheet

19 pages,
406.42 Kb

transistor rf cm 1104 cd 1191 cb CM 1241 siemens CD 1691 CB datasheet abstract
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Abstract: D RF out G1 RF in S C block C block 94 9296 Features D D D D Integrated , with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert 10 kW , 98.3 104.4 110.4 119.7 128.4 137.0 144.2 149.1 LOG MAG dB ­0.13 ­0.14 ­0.16 ­0.18 , Source Voltage TELEFUNKEN Semiconductors Rev. A1, 24-Apr-96 S913T/S913TR S913T/S913TR 80 CM ­ Cross ... Original
datasheet

7 pages,
100.57 Kb

S913TR S913T transistor rf cm 1104 a1 4741 5 a1 4741 2 S913T/S913TR S913T/S913TR abstract
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Abstract: functionality. Rev. B | Page 5 of 16 80 90 AD8022 AD8022 TYPICAL PERFORMANCE CHARACTERISTICS 5 5 RF 402 4 4 VOUT RF = 715 VIN 2 3 VIN 2 50 56.2 50 (dB) � � RF = 402 � , Figure 4. Frequency Response vs. RF, G = +1, VS = � V, VIN = 63 mV p-p �1 �2 �V �4 �0V , Gain Flatness vs. Frequency, G = +2 140 0.4 0.3 VIN = 0.8V p-p � RF = 0 � 0.1 VIN , VIN = 0.05V p-p VOUT 453 01053-007 50 3 G = +2 RL = 500 G = +1, RF = 402 120 ... Original
datasheet

16 pages,
274.07 Kb

XFC-B AD9754 ADSL layout guide CURRENT TRANSFORMER fast responce DB10 folded cascode current mirror op amp AD8022 transistor rf cm 1104 AD8022 abstract
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Abstract: 1 (dB) Data Sheet 5 402 4 VIN = 0.05V p-p VIN = 0.2V p-p RF 50 VOUT 50 VIN 50 RF = 715 3 2 1 (dB) VIN 50 453 VOUT 56.2 0 �����0.1 1 10 FREQUENCY (MHz) 100 RF = 402 RF = 0 , 500 500 Figure 4. Frequency Response vs. RF, G = +1, VS = � V, VIN = 63 mV p-p 0.4 0.3 0.2 0.1 , 120 100 G = +1, RF = 402 0 (dB) FREQUENCY (MHz) 0.1 80 60 40 20 0 G = +2, RF = 715 �1 , , RF = 0 2.00V 100 180 100ns INPUT FREQUENCY (Degrees) 90 0 10 0% OUTPUT ... Original
datasheet

16 pages,
286.09 Kb

receiver QAM schematic diagram AD8022 AD8022 abstract
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Abstract: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT , Temperature Tstg -65 to +150 °C 2 Note Mounted on 1.08 cm - 1.0 mm (t) glass epoxy PCB Because , Note 2 Note Mounted on 1.08 cm - 1.0 mm (t) glass epoxy PCB ELECTRICAL CHARACTERISTICS (TA = , Note 1 RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Noise Figure , 0.655 0.648 0.639 0.636 -87.4 -95.4 -102.9 -110.4 -117.5 -124.7 -131.2 -137.7 -143.8 ... Original
datasheet

16 pages,
85.03 Kb

R54 Transistor 7812 4pin 2SC5750-T1 2SC5750 transistor NEC 7812 NEC 7812 nec japan 7812 2SC5750 abstract
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Abstract: 19216 Electrostatic sensitive device. Observe precautions for handling. C block AGC RF in C block G2 G1 S D RFC VDD(VDS) RF out C block 94 9296 Mechanical Data Typ: S913T S913T Case: SOT-143 , open collector switching transistor (inside of PLL), insert 10 k collector resistor. Electrical AC , 72.9 76.2 81.6 89.3 98.3 104.4 110.4 119.7 128.4 137.0 144.2 149.1 -0.13 -0.14 -0.16 -0.18 -0.20 -0.24 , ) Figure 7. Transducer Gain vs. Gate 2 Source Voltage 80 CM ­ Cross Modulation ( dB ) Pin = ­20 dBm ... Original
datasheet

9 pages,
242.75 Kb

transistor rf cm 1104 SOT-143 MARKING 557 557 sot-143 MARKING smd transistor marking j5 marking 557 SOT143 w13 smd transistor S913T S913TR S913TRW S913T abstract
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( < 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 BSS44 BSS44 2N3202 2N3202 2N3202 2N3202 Nearest Preferred SILICON NPN TRANSISTOR NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 MJ802 MJ802 MJ802 MJ802 2N3232 2N3232 2N3232 2N3232 Nearest NPN SILICON TRANSISTOR MEDIUM and HIGH VOLTAGE ( > 150 V) SWITCHING TRANSISTORS Power Bipolar 227 2N3719 2N3719 2N3719 2N3719 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 BSS44 BSS44 2N3720 2N3720 2N3720 2N3720 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V
www.datasheetarchive.com/files/stmicroelectronics/stonline/db/xref-v4.txt
STMicroelectronics 31/01/2001 1362.78 Kb TXT xref-v4.txt
TDA8060TS/C2 TDA8060TS/C2 TDA8060TS/C2 TDA8060TS/C2 Supply current mA 80 Direct conversion QPSK demodulation Variable gain on RF input dB range 30 BCV65 BCV65 BCV65 BCV65 NPN/PNP General Purpose Transistor .SUBCKT BCV65 BCV65 BCV65 BCV65 1 2 3 4 Q1 1 2 4 BC847B BC847B BC847B BC847B Q2 3 2 4 134 1 0 /models
www.datasheetarchive.com/files/philips/search/docindex-v2.txt
Philips 14/02/2002 998.47 Kb TXT docindex-v2.txt
2N3202 2N3202 2N3202 2N3202 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 BSS44 BSS44 2N3203 2N3203 2N3203 2N3203 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V TRANSISTOR MEDIUM and HIGH VOLTAGE ( > 150 V) SWITCHING TRANSISTORS Power Bipolar 227 4080 2N3439 2N3439 2N3439 2N3439 2N3439 2N3439 2N3439 2N3439 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 BSS44 BSS44 2N3720 2N3720 2N3720 2N3720 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power
www.datasheetarchive.com/files/stmicroelectronics/stonline/db/xref-v1.txt
STMicroelectronics 20/10/2000 1859.39 Kb TXT xref-v1.txt
( < 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 BSS44 BSS44 2N3202 2N3202 2N3202 2N3202 Nearest Preferred SILICON NPN TRANSISTOR NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 MJ802 MJ802 MJ802 MJ802 2N3232 2N3232 2N3232 2N3232 Nearest NPN SILICON TRANSISTOR MEDIUM and HIGH VOLTAGE ( > 150 V) SWITCHING TRANSISTORS Power Bipolar 227 2N3719 2N3719 2N3719 2N3719 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 BSS44 BSS44 2N3720 2N3720 2N3720 2N3720 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V
www.datasheetarchive.com/files/stmicroelectronics/stonline/db/xref-v3.txt
STMicroelectronics 20/10/2000 1842.28 Kb TXT xref-v3.txt
Transistor Array CA3083 CA3083 CA3083 CA3083 CA3083M CA3083M CA3083M CA3083M CA3083M96 CA3083M96 CA3083M96 CA3083M96", "General Purpose High Current NPN Transistor Array",". /device_CA3102 CA3102 CA3102 CA3102.html"); searchDB[37] = new searchOption("CA3127 CA3127 CA3127 CA3127", "High Frequency NPN Transistor Array CA3127E CA3127E CA3127E CA3127E CA3127M CA3127M CA3127M CA3127M >High Frequency NPN Transistor Array","./Device_Pages/device_CA3127 CA3127 CA3127 CA3127.html"); searchDB[38
www.datasheetarchive.com/files/intersil/search/searchdb.js
Intersil 13/10/2005 1108.55 Kb JS searchdb.js
N e v e r s t o p t h i n k i n g . Microcontrol lers User 's Manual , V1.0, Jan. 2002 TC1765 TC1765 TC1765 TC1765 System Units 32-Bi t Single-Chip Microcontrol ler Edition 2002-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 D-81541 D-81541 D-81541 München, Germany ? Infineon Technologies AG 2002. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change rese
www.datasheetarchive.com/files/infineon/mc_data/dave/products/tc1765.dip!/tc1765/documents/tc1765_umsu_v10.pdf
Infineon 09/09/2002 10835.06 Kb DIP tc1765.dip