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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

transistor marking code 12W 80

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transistor marking code 12W

Abstract: marking code 12W transistor 15.31 0.563 0.603 Marking Diagram Y M = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl , 1.800 0.060 0.071 Marking Diagram Y M = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl , % - 5 10 mA - 80 135 mA - 50 120 uA 6.8 - A 60 80 - dB - VCONTROL = (VOUT +2.5V), VCONTROL =5V, VPOWER= 3.3V, VADJ=0V Current , transistor, this current will track output current with a ratio of about 1:100 Note4: If the same voltage
Taiwan Semiconductor
Original

3A LDO step down regulator

Abstract: transistor marking code 12W 15.31 0.563 0.603 Marking Diagram Y M = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl , 1.800 0.060 0.071 Marking Diagram Y M = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl , % - 5 10 mA - 80 135 mA - 50 120 uA 6.8 - A 60 80 - dB - VCONTROL = (VOUT +2.5V), VCONTROL =5V, VPOWER= 3.3V, VADJ=0V Current , transistor, this current will track output current with a ratio of about 1:100 Note4: If the same voltage
Taiwan Semiconductor
Original

transistor marking code 12W

Abstract: transistor marking code 12W 80 8.280 8.800 0.326 0.346 6.010 6.510 0.237 0.256 14.29 15.31 0.563 0.603 Marking Diagram = Year Code , 0.324 0.326 1.540 1.800 0.060 0.071 Marking Diagram = Year Code = Month Code (A=Jan, B =Feb, C=Mar , 1.250 Max 1.262 1.270 +1.0 Unit V VOUT +1.6 0.2 0.4 10 135 120 - % 0.04 0.08 5 80 50 6.8 80 0.003 % % mA mA uA A dB %/W Dropout Voltage (Note 4) VCONTROL = (VOUT +2.5V), IO = , transistor, this current will track output current with a ratio of about 1:100 Note4: If the same voltage is
Taiwan Semiconductor
Original

marking code 12W transistor

Abstract: transistor marking code 12W -251 Dimension A B Marking : C HSMC Logo D Product Series Part Number Date Code Rank , Date : 2000.11.01 Page No. : 1/2 HI6718 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI6718 , : 1.2W · High current: 1A Absolute Maximum Ratings (Ta=25°C) · Maximum Temperatures Storage , *hFE3 fT Cob Min. 100 100 5 80 50 20 50 - Typ. - Max. 100 350 250 20 Unit V , -Lead TO-251 Plastic Package HSMC Package Code : I *:Typical Inches Min. Max. 0.0177 0.0217
Hi-Sincerity Microelectronics
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marking code 12W transistor transistor marking code 12W HI671 HE9008-A UL94V-0

transistor marking code 12W 80

Abstract: transistor marking code 12W -252 Dimension Marking : C A HSMC Logo Part Number Date Code D B Rank Ink Mark G F , Date : 2000.11.01 Page No. : 1/2 HJ6718 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ6718 , : 1.2W · High current: 1A Absolute Maximum Ratings (Ta=25°C) · Maximum Temperatures Storage , *hFE3 fT Cob Min. 100 100 5 80 50 20 50 - Typ. - Max. 100 350 250 20 Unit V , -Lead TO-252 Plastic Surface Mount Package HSMC Package Code : J *:Typical Inches Min. Max. 0.0177
Hi-Sincerity Microelectronics
Original
transistor marking code 12W 80 IC350 HE6830-A

12v in 5v out regulator

Abstract: transistor marking code 12W 0.060 0.071 Marking Diagram / TS1582 YML CM5 Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar , ), = 10mA to 3A - 80 135 mA Adjust Pin Current Vcontrol = 2.75V, Vpower = 2.05, Vadj = 0V, l0 = 10rnA , 5V, Vrippi r - 1V, lo = 2.3A, f = 120kHz 60 80 - dB Thermal Regulation 30mS pulse â'" 0.003 â'" %/W , is the drive current required for the output transistor, this current will track output current with , pin is the collector of the power transistor. The output load current is supplied through this pin
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OCR Scan
TS1532 TS1582CM5 12v in 5v out regulator TS15

TS15

Abstract: TS1581 0.060 0.071 Marking Diagram TS 1581 YML CM5 Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar , Control Pin Current (Note 3) Vconikol = (Voui +2.5V), Vrcmtr = (Vout +Q8V), = 10mA to 5A - 80 135 mA , = 120kHz 60 80 - dB Thermal Regulation 30mS pulse â'" 0.003 â'" %/W Dropout Voltage (Note 4 , for the output transistor, this current will track output current with a ratio of about 1:100 Note4 , transistor. The output load current is supplied through this pin. The voltage at this pin must be 0.7V
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OCR Scan
TS1581 TS1581CM5 TS1531

mosfet marking 12W

Abstract: transistor marking code 12W transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.30A ­ 1.2W + , Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) PACKAGE CODE: H46S RoHS , after the Lot Marking. · This product include the lead in the Glass of electronic parts and the lead , FREQUENCY -10 140 120 10 100 8 80 T @Pout=7W 6 4 40 VDD=12.5V Pin=30mW in @Pout=7W 2 60 20 0 0 60 65 70 75 80 85 FREQUENCY f(MHz) -20 -40 -60 60
Mitsubishi
Original
RA07H0608M mosfet marking 12W 30mW transistor RA07H0608M-101 68-88MH 88-MH

TS15

Abstract: TS1583 0326 0.060 0.071 Marking Diagram TS1583 YML CMS Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar , 2.1.5A, f = 120KHz 60 80 - dB Thermal Regulation 30mS pulse â'" 0.003 â'" %/W Dropout Voltage (Note 4 , required for the output transistor, this current will track, output current with a ratio of about 1:100 , power transistor. The output load current is supplied through this pin. The voltage at this pin must be , power for the control circuitry and supplies the drive current to the NPN output transistor. This allows
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OCR Scan
TS1583CM5

transistor marking code H11S

Abstract: H11S RF Ground (Case) PACKAGE CODE: H11S RoHS COMPLIANCE · RA06H8285M-101 is a RoHS compliant products. · RoHS compliance is indicate by the letter "G" after the Lot Marking. · This product include , versus FREQUENCY 140 10 120 100 VDD=12.5V Pin=1mW 8 80 6 60 T @Pout=6W 4 , mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded , coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink
Mitsubishi
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RA06H8285M transistor marking code H11S H11S 820-851MH 851-MH
Abstract: Second Lines: Logo and Marking ID Third Line: Date Code Y: Year WW: Work Week of Molding A: Assembly House Code th th XX: 7 and 8 Digits of Batch No. First Line: Logo and Marking ID Second Line , regulation controller and M Package (SO7) a high voltage transistor, and is specially designed for off-line power supplies within 12W output power or non-isolated buck applications within 5W. Typical , NPN Transistor with 700VCBO â'¢ Low Start-up Current: 0.2µA (Typ) â'¢ Internal Output Diodes
Original
AP3965/66/71 AP3965 AP3966/71 DS36531
Abstract: 0.180 0.050 0.110 0.013 0.326 0.071 Marking Diagram Y = Y e ar Code = Month Code (A =Jan, B =F eb, C , 0.2 % - - 0.08 5 30 0.4 10 135 % mA mA -5.5 60 50 6.8 80 0.003 0.55 120 - , required fo r the o utp ut transistor, this current will track outp ut current w ith a ratio o f about 1 , er transistor. The output load cu rren t is supplied 5 Pow or through this pin. The voltage , drive current to the NPN output transistor. This allo w s th e NPN o utp ut tran sistor to be driven -
OCR Scan
1583C

07n60c2

Abstract: TRANSISTOR SMD MARKING CODE 12w capacitances · Improved noise immunity P-TO251 Type Package Ordering Code Marking , SPD07N60C2 SPU07N60C2 Preliminary data Cool MOSTM Power Transistor C OLMOS O Power , Turn-on delay time t d(on) VDD=380V, VGS=0/13V, - 11 - Rise time tr ID=7.3A, R G=12W , energy as C oss while V DS is rising from 0 to 80% V DSS. 2C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss o(tr) Page 3 DS DSS 2000-05-08
Infineon Technologies
Original
P-TO252 Q67040-S4311 07n60c2 TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w Q67040-S4312 07N60C2

ap3970

Abstract: AP3970P7-G1 and a high voltage transistor, and is specially designed for off-line power supplies within 12W , Information First and Second Lines: Logo and Marking ID Third Line: Date Code Y: Year WW: Work Week of Molding A: Assembly House Code th th XX: 7 and 8 Digits of Batch No. First Line: Logo and Marking , Built-in NPN Transistor with 700VCBO Low Start-up Current: 0.2A (Typ.) Internal Output Cable Voltage , Solution Output Power Range (Note 1): AP3968 for 5W Adapter AP3969 for 7.5W Adapter AP3970 for 12W
Diodes
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AP3970P7-G1 ap3968m AP3970P7 AP3970P-G1 AP3968/69/70 DS36759

TRANSISTOR SMD MARKING CODE 12w

Abstract: smd transistor marking 12W immunity P-TO263-3-2 Type Package Ordering Code Marking SPP07N60C2 P-TO220 , SPP07N60C2 SPB07N60C2 Preliminary data Cool MOSTM Power Transistor C OLMOS O Power , Turn-on delay time t d(on) VDD=380V, VGS=0/13V, - 11 - Rise time tr ID=7.3A, R G=12W , energy as C oss while V DS is rising from 0 to 80% V DSS. 2C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss o(tr) Page 3 DS DSS 2000-05-08
Infineon Technologies
Original
Q67040-S4310 smd transistor 12w 12W SMD MARKING CODE smd transistor 12W 55 12W smd transistor SMD 12w transistor SMD MARKING CODE 12w P-TO220-3-1 Q67040-S4309

mini audio amplifier 2w

Abstract: 12 pin stereo amplifier with heat sink 19-3134; Rev 1; 9/05 1.2W, Low-EMI, Filterless, Mono Class D Amplifier with Stereo DirectDrive , . The speaker amplifiers deliver 1.2W into an 8 load while offering efficiencies above 85%. A , . Applications Cellular Phones PDAs Compact Notebooks Features 1.2W Filterless Class D Amplifiers , MAX9770ETI+ 28 TQFN-EP* MAX9770EUI 28 TSSOP MAX9772EBA-T 5 x 5 UCSP PKG SELECTABLE CODE , MAX9770/MAX9772 1.2W, Low-EMI, Filterless, Mono Class D Amplifier with Stereo DirectDrive Headphone
Maxim Integrated Products
Original
mini audio amplifier 2w 12 pin stereo amplifier with heat sink marking E5 amplifier mono mosfet amplifier diagram mosfet stereo headphone amplifier circuit MAX9770 MAX9770/ MAX9772

H-970

Abstract: Code : P designed for AC/DC adapter, providing as high as 12W continuous power Fig.1 output in , power dissipation. At the off-state of power transistor, the reverse bias of Emit of power transistor , the safety area of power transistor. Besides, it also includes over load protection, anti-saturation , Built-in 700 V High Voltage Power Transistor and Few Peripheral Components Latching PWM for , Switch Power Transistor Makes the Power Dissipation of the Start-up Resistance be Reduced More Than 10
Hi-Sincerity Microelectronics
Original
H-970 IC200908

RA07H0608M-101

Abstract: RA07H0608M =0V) · Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW 2 3 RF Ground (Case) PACKAGE CODE: H46S RoHS , after the Lot Marking. · This product include the lead in the Glass of electronic parts and the lead , 10 100 8 80 T @Pout=7W 6 4 40 VDD=12.5V Pin=30mW in @Pout=7W 2 60 20 0 0 60 65 70 75 80 85 FREQUENCY f(MHz) -20 -40 -60 60 3 20 2 f , GAIN Gp(dB) 4 30 70 75 80 FREQUENCY f(MHz) 85 90 50 DRAIN CURRENT IDD(A
Mitsubishi
Original
07H0608
Abstract: ) PACKAGE CODE: H46S RoHS COMPLIANT â'¢ RA07H0608M-101 is a RoHS compliant products. â'¢ RoHS compliance is indicate by the letter â'Gâ' after the Lot Marking. â'¢ This product include the lead in , POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY 140 120 10 100 8 80 ηT , 80 85 FREQUENCY f(MHz) -20 -40 -60 60 3 20 2 f=68MHz, VDD=12.5V, VGG=5V 0 , 70 75 80 FREQUENCY f(MHz) 85 90 50 DRAIN CURRENT IDD(A) OUTPUT POWER Pout(dBm Mitsubishi
Original

RF MOSFET MODULE

Abstract: RA07H0608 Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) PACKAGE CODE: H46S RoHS , after the Lot Marking. · This product include the lead in the Glass of electronic parts and the lead , 10 100 8 80 T @Pout=7W 6 4 40 VDD=12.5V Pin=30mW in @Pout=7W 2 60 20 0 0 60 65 70 75 80 85 FREQUENCY f(MHz) -20 -40 -60 60 3 20 2 f , GAIN Gp(dB) 4 30 70 75 80 FREQUENCY f(MHz) 85 90 50 DRAIN CURRENT IDD(A
Mitsubishi
Original
RF MOSFET MODULE RA07H0608
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