NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: KST42 KST42 KST43 KST43 MARK 1D 1E 0.1 0.1 À À 0.5 0.9 V V 25 40 40 3 4 50 pF pF MHz KST42/43 KST42/43 NPN EPITAXIAL SILICON TRANSISTOR , KST42/43 KST42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 Î) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol Rating Unit 300 200 V V VEBO IC PC T STG 300 200 6 500 350 150 V V V mA mW RTH(j-a) 357 VCBO Collector Base ... | Original |
2 pages, |
KST43 KST42 KST42/43 KST42/43 abstract |
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| Abstract: TYPE KST42 KST42 KST43 KST43 MARK 1D 1E n. 1 D H-ET Rev. B FAIRCHILD SEMICONDUCTOR ™ ©1999 Fairchild Semiconductor Corporation KST42/43 KST42/43 NPN EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN CURRENT GAIN-BANDWIDTH , KST42/43 KST42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Symbol Rating Unit Collector Base Voltage VcbO :KST42 KST42 300 V : KST43 KST43 200 V Collector-Emitter Voltage VcEO :KST42 KST42 300 V : KST43 KST43 200 V Emitter-Base Voltage Vebo 6 V Collector Current lc ... | OCR Scan |
2 pages, |
KST43 KST42 KST42/43 KST42/43 abstract |
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| Abstract: KST42/43 KST42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector Base Voltage VcbO KST42 KST42 300 V KST43 KST43 200 V , = 100MHz * Pulse Test: PW ... | OCR Scan |
2 pages, |
TD5 marking KST43 KST42 BB 541 transistor SOT23 1d KST42/43 KST42/43 abstract |
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| Abstract: UNCONTROLLED DOCUMENT 01.60 WO.063] 1.60 [0.063] POLARITY MARK R0.80 [R0.031] 1.80 [0.071] 0.25 [O.OIO] J |- 3,20 [0,126] - 0.50 [0,020: , COLOR: WATER CLEAR 100 1.D 3 3 880 400-120D 400-120D nA mA V uS uS rim nm Vceo = 10V Ee = G mw/cm Vce = 5V , Ee = , ,000 PIECES PER REEL 2. THE POLARITY MARK IS ORIENTED TOWARDS THE TAPE SPROCKET HOLE. L50 [0,059] 1.75 , OED-ST1 307C-TR 307C-TR 3,2mm x 1.6mm PCB PHOTO TRANSISTOR. WATER CLEAR DOME LENS, TAPE AND REEL CONFIDENTIAL ... | OCR Scan |
1 pages, |
datasheet abstract |
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| Abstract: TRANSCEIVER C0 LOGIC CONTROL C1 COM - 2D+ COM + 1D- UART 1D+ VBUS USB/DATA JACK , 2D+ 3 7 COM + 4M 5 6 1D- 1D+ 4 5 1D- 4 1D+ 6 GND GND , 1D- and 1D+ ON uTQFN TQFN NAME 1 1 3D+ Truth Table FUNCTION MODE COMMENTS 2 , USB/UART #2 2D- and 2D+ ON 4 4 1D- USB1 Differential Input 1 1 USB/UART #3 3D- and 3D+ ON 5 5 1D+ USB1 Differential Input 6 6 GND Ground Connection 7 ... | Original |
17 pages, |
TB363 A115B FN7701 ISL54216 ISL54216IRTZ ISL54216IRTZ-T ISL54216IRUZ-T jesd22-A115B sp3t analog switch TB347 3D12 ISL54216 abstract |
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| Abstract: drastic load transient, a control transistor with low ON-Resistance, `LX switch', and a protection circuit , Basic Oscillator Frequency. 100kHz (Ã-Ã-1A/C), 180kHz (Ã-Ã-1D) · Small , transistor with low on-resistance · Start-up , SOT-23-5 4 5 LX GND (mark side) CE VOUT NC 1 2 3 PIN DESCRIPTION Pin No. , 3.6VVSET4.0V VOUT=VSETÃ-0.96 4.1VVSET4.5V VOUT=VSETÃ-0.96 4 V V (Ã-Ã-1D) 30 55 50 80 35 ... | Original |
18 pages, |
EA-075-0012 R1210N R1210N abstract |
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| Abstract: ) Buffer M/S Mark/Space (Break/Make) Ratio select. On-chip pull-down transistor to Vgg. Note: O/C = Open , outpulsing mark/space ratio • Selectable dialing speeds of 10, 16, 20 and 932 Hz • Low cost Applications , pulsing and muting outputs and has a HOLD pin for interrupting a dialing sequence. Outpulsing mark/space , (IDP) selection in place of Mark/Space (M/S) ratio selection. 0SC1 o-0SC2 o- VD0C VSS 0 M/S (IDP , 200 fA 3.579545 MHz Crystal, CxTALOUT = 1zPh 4 Pull-Up Transistor Source Current -0.5 -3.0 0 1 -80 ... | OCR Scan |
10 pages, |
9651h DF320 MT4320 MT4322 MT4322AC MT4323AC telephone KEYPAD matrix encoded keypad KEYPAD SWITCH debounce KEYPAD 4 X 4 source code circuit diagram of speech recognition DF320 abstract |
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| Abstract: KST42/43 KST42/43 KST42/43 KST42/43 High Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25癈 unless otherwise noted Symbol VCBO Value Units : KST42 KST42 : KST43 KST43 300 200 V V : KST42 KST42 : KST43 KST43 VCEO , Semiconductor Corporation Rev. A2, November 2002 KST42/43 KST42/43 Marking Code Type KST42 KST42 KST43 KST43 Mark 1D 1E Marking 1D �02 Fairchild Semiconductor Corporation Rev. A2, November 2002 ... | Original |
5 pages, |
KST43 KST42 marking 1D KST42/43 KST42/43 abstract |
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| Abstract: KST42/43 KST42/43 KST42/43 KST42/43 High Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25癈 unless otherwise noted Symbol VCBO Value Units : KST42 KST42 : KST43 KST43 300 200 V V : KST42 KST42 : KST43 KST43 VCEO , Semiconductor Corporation Rev. A1, July 2001 KST42/43 KST42/43 Marking Code Type KST42 KST42 KST43 KST43 Mark 1D 1E Marking 1D �01 Fairchild Semiconductor Corporation Rev. A1, July 2001 KST42 KST42 ... | Original |
5 pages, |
marking 1D KST43 KST42 KST42/43 KST42/43 abstract |
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| Abstract: Rev. A, February 2000 KST42/43 KST42/43 Marking Code Type KST42 KST42 KST43 KST43 Mark 1D 1E Marking 1D �00 Fairchild Semiconductor International Rev. A, February 2000 KST42/43 KST42/43 VBE , KST42/43 KST42/43 KST42/43 KST42/43 High Voltage Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25癈 unless otherwise noted Symbol Units 300 200 V V : KST42 KST42 : KST43 KST43 VCEO Value : KST42 KST42 : KST43 KST43 VCBO Parameter ... | Original |
5 pages, |
KST43 KST42 KST42/43 KST42/43 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| .0 Q1 Power MOSFET, 100V/2.3Amp, SOT-223 Fairchild Semi., IRFM120A IRFM120A IRFM120A IRFM120A 16.0 1.0 Q2 PNP Transistor, SOT23, code C2D Central Semi., CMPTA92 CMPTA92 CMPTA92 CMPTA92 17.0 1.0 Q10 NPN Transistor, SOT23, code C1D Central Semi., CMPTA42 CMPTA42 CMPTA42 CMPTA42 18 2A 6.0 1.0 D1 Diode,Zener,4.3V,SOD-123,CCP-mark. Central Semi., CMHZ4687 CMHZ4687 CMHZ4687 CMHZ4687 7.0 1.0 D2 3.0A Diode www.datasheetarchive.com/download/32813657-364874ZC/1567a.zip (1567A.xls) |
Linear | 24/08/2011 | 970.03 Kb | ZIP | 1567a.zip |
| guarantee a TX gain prog rammability in a 15dB range with 1dB step and a RX gain programmability in a 30d F C5 3.3nF C3 470nF R4 13K +3dB TX RX R1 1K C1 1 m F +20dB 0/+15dB 1dB step +21 0/-30dB 2dB step A translated as listed belo w, following the ITU_T V.23 recommendation at 1200bps: FX = 1300 Hz (symbol 1, mark produce the mark/space sequence. The 0.833ms timing can be achieved in several ways and depends only on - mented adding only one small signal transistor and one diode to the standard application d iagram. 6 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4969-v1.htm |
STMicroelectronics | 14/06/1999 | 27.82 Kb | HTM | 4969-v1.htm |
| guarantee a TX gain prog rammability in a 15dB range with 1dB step and a RX gain programmability in a 30d F C5 3.3nF C3 470nF R4 13K +3dB TX RX R1 1K C1 1 m F +20dB 0/+15dB 1dB step +21 0/-30dB 2dB step A translated as listed belo w, following the ITU_T V.23 recommendation at 1200bps: FX = 1300 Hz (symbol 1, mark produce the mark/space sequence. The 0.833ms timing can be achieved in several ways and depends only on - mented adding only one small signal transistor and one diode to the standard application d iagram. 6 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4969.htm |
STMicroelectronics | 02/04/1999 | 27.86 Kb | HTM | 4969.htm |
| 16 15 14 13 12 11 10 27 26 25 24 23 22 21 20 19 36 1 2 3 4 5 6 7 8 9 37 D0 D1 D2 D3 D4 D5 D6 D8 D7 QFS CX GND MON ADS DIX DIY DPR FV ESO SY GND SX QSW TN1 D9 V EE V EE GND AIX AIY RSE EVR SYN PCK GND V W 10k W 1602A-15.EPS STV1602A STV1602A STV1602A STV1602A 6/22 18 17 16 15 14 13 12 11 10 9 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 30 ) 1602A-34.EPS Figure 17 : NRZI to NRZ conversion D1 D2 D3 D4 D5 D6 D7 D8 D9 Out In 1602A-35.EPS Figure 18 : x 9 + x 4 + 1 Descrambler D1 D2 D3 D4 D5 D6 D7 D8 D9 Out In D10 1602A-36.EPS Figure 19 : Actual www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1156.htm |
STMicroelectronics | 02/04/1999 | 29.8 Kb | HTM | 1156.htm |
| 23 22 21 20 19 36 1 2 3 4 5 6 7 8 9 37 D0 D1 D2 D3 D4 D5 D6 D8 D7 QFS CX GND MON ADS DIX DIY DPR FV ESO SY GND SX QSW TN1 D9 V EE V EE GND W 2k W 10k W 10k W 1602A-15.EPS STV1602A STV1602A STV1602A STV1602A 6/22 18 17 16 15 14 13 12 11 10 9 D0 D1 D2 D ) 1602A-34.EPS Figure 17 : NRZI to NRZ conversion D1 D2 D3 D4 D5 D6 D7 D8 D9 Out In 1602A-35.EPS Figure 18 : x 9 + x 4 + 1 Descrambler D1 D2 D3 D4 D5 D6 D7 D8 D9 Out In D10 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1156-v1.htm |
STMicroelectronics | 25/05/2000 | 31.58 Kb | HTM | 1156-v1.htm |
| 16 15 14 13 12 11 10 27 26 25 24 23 22 21 20 19 36 1 2 3 4 5 6 7 8 9 37 D0 D1 D2 D3 D4 D5 D6 D8 D7 QFS CX GND MON ADS DIX DIY DPR FV ESO SY GND SX QSW TN1 D9 V EE V EE GND AIX AIY RSE EVR SYN PCK GND V W 10k W 1602A-15.EPS STV1602A STV1602A STV1602A STV1602A 6/22 18 17 16 15 14 13 12 11 10 9 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 30 ) 1602A-34.EPS Figure 17 : NRZI to NRZ conversion D1 D2 D3 D4 D5 D6 D7 D8 D9 Out In 1602A-35.EPS Figure 18 : x 9 + x 4 + 1 Descrambler D1 D2 D3 D4 D5 D6 D7 D8 D9 Out In D10 1602A-36.EPS Figure 19 : Actual www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1156-v2.htm |
STMicroelectronics | 14/06/1999 | 29.76 Kb | HTM | 1156-v2.htm |
| 31 32 33 34 35 18 17 16 15 14 13 12 11 10 27 26 25 24 23 22 21 20 19 36 1 2 3 4 5 6 7 8 9 37 D0 D1 D2 D3 D4 D5 D6 D8 D7 QFS CX GND MON ADS DIX DIY DPR FV ESO SY GND SX QSW TN1 D9 V EE V EE GND AIX AIY W 10k W 1602A-15.EPS STV1602A STV1602A STV1602A STV1602A 6/22 18 17 16 15 14 13 12 11 10 9 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 30 ) 1602A-34.EPS Figure 17 : NRZI to NRZ conversion D1 D2 D3 D4 D5 D6 D7 D8 D9 Out In 1602A-35.EPS Figure 18 : x 9 + x 4 + 1 Descrambler D1 D2 D3 D4 D5 D6 D7 D8 D9 Out In D10 1602A-36.EPS Figure 19 : Actual www.datasheetarchive.com/files/stmicroelectronics/books/ascii/docs/1156.htm |
STMicroelectronics | 25/05/2000 | 34.22 Kb | HTM | 1156.htm |
| amplifier operates in the frequency range of 100 to 2500 MHz with an output power of 2.3 dBm (@ 1 dB gain Motorola Booth #406 RF Power Transistor Characterized with Series Equivalent Large NPN silicon transistor today characterized with series equivalent large-signal parameters suitable for . Specific applications include use in DCS1800 DCS1800 DCS1800 DCS1800 and PCS1900 PCS1900 PCS1900 PCS1900 cellular radio. The MRF6404 MRF6404 MRF6404 MRF6404 RF power transistor migration. Pricing for the MRF6404 MRF6404 MRF6404 MRF6404 RF power transistor is $292.60 in low volumes. Pricing is in U www.datasheetarchive.com/files/motorola/design-n/rf/012996.htm |
Motorola | 25/11/1996 | 106.33 Kb | HTM | 012996.htm |
| -Increment for all registers. D3, D2, D1, D0 roll over to '0000' after the last register (1100) is accessed. 1 0 1 Auto-Increment for individual brightness registers only. D3, D2, D1, D0 roll over to '0010' after , D1, D0 roll over to '0110' after the last register (0111) is accessed. 1 1 1 Auto-Increment for individual and global control registers only. D3, D2, D1, D0 roll over to '0010' after the last register (0111) is accessed. 002aab296 AI2 AI1 AI0 0 D3 D2 D1 D0 Auto-Increment flag register address Auto www.datasheetarchive.com/download/41019255-595924ZC/code.lcd.demo.board.zip (pca9633.pdf) |
NXP | 16/03/2009 | 9306.17 Kb | ZIP | code.lcd.demo.board.zip |
| some very low-power high-voltage applications. ac LINE Q1 Q2 Q3 Q4 Q5 Q6 Q7 Q8 D7 D8 D9 D10 L1 D12 D11 in pairs, with the outputs complementary so that driving complementary top and bottom transistors on . Both of these faults are configured to turn off all six of the power transistors and jump to an error provides dead-time insertion. This provides a short delay time between turning off the top power transistor and turning on the lower transistor in one phase leg. Dead-time is essential to safe switching and low www.datasheetarchive.com/download/85023415-313978ZC/an1858sw.zip (AN1858.pdf) |
KyteLabs | 11/06/2002 | 444.92 Kb | ZIP | an1858sw.zip |