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Abstract: TAN500 TAN500 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz GENERAL DESCRIPTION The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal , ZL (?¡) 0.96 ­ j1.54 1.53 ­ j1.33 1.58 ­ j1.46 1.33 ­ j1.67 1.87 ­ j1.47 * VCC = 50V, PIN = ... Original
datasheet

5 pages,
341.75 Kb

TAN500 63v 2200uF 200B 960-1215 transistor 500w j167 TAN500 abstract
datasheet frame
Abstract: Advance Data Sheet Product Description SL-4524 SL-4524 The SL-4524 SL-4524 is Stanford Microdevices' high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers in Class A or AB operation. 2400 MHz 45W 26.5V RF Power N-Channel Enhancement Mode LDMOS , j1.51 2360 1.68 - j4.66 0.31 - j1.49 2370 1.67 - j4.63 0.31 - j1.47 2380 1.67 - ... Original
datasheet

8 pages,
143.49 Kb

SL-45242 SL-45241 J476 SL-4524 SL-4524 abstract
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Abstract: BLA6H0912-500 BLA6H0912-500 LDMOS avionics radar power transistor Rev. 04 - 10 May 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics , (RoHS) BLA6H0912-500 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 1.3 , reserved. 2 of 14 BLA6H0912-500 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 6. , Semiconductors LDMOS avionics radar power transistor 7. Application information 7.1 Impedance information ... Original
datasheet

14 pages,
128.43 Kb

power tr unit j122 power amplifier NXP BLA6H0912 800B 1030 mhz BLA6H0912-500 BLA6H0912-500 abstract
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Abstract: BLA6H0912-500 BLA6H0912-500 LDMOS avionics radar power transistor Rev. 03 - 30 March 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics , (RoHS) BLA6H0912-500 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 1.3 , reserved. 2 of 14 BLA6H0912-500 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 6. , Semiconductors LDMOS avionics radar power transistor 7. Application information 7.1 Impedance information ... Original
datasheet

14 pages,
118.28 Kb

J122 SMD TRANSISTOR 800B BLA6H0912-500 BLA6H0912-500 abstract
datasheet frame
Abstract: Freescale Semiconductor Technical Data Document Number: MRF8S7120N MRF8S7120N Rev. 0, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7120NR3 MRF8S7120NR3 Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. · Typical Single-Carrier W-CDMA , - j1.47 730 1.01 - j1.25 2.16 - j1.37 740 1.08 - j1.25 2.15 - j1.29 750 ... Original
datasheet

13 pages,
425.98 Kb

MPZ2012S300AT000 mpz2012s300AT AN1955 MRF8S7120N MRF8S7120N abstract
datasheet frame
Abstract: , generally consists of only a capacitance C OUT. The internal resistance of the transistor is supposed to , resistance, seen at the collector-emitter terminals, and RT the internal transistor resistance equal to , the above values of Q. If R1 is the load resistance of a transistor, the internal transistor , easily, calculated for equal frequencies: (b) 0.316 ­ j0.465 (1 + j1.47) R1 = 1 R2 = 0.1 (a , despite the intrinsic gain decrease of a transistor with frequency. Tables have been computed elsewhere ... Original
datasheet

16 pages,
253.24 Kb

MTT-19 AN721 computer Network Types diagram Diode jx4 J0146 INVERTER TRANSFORMERS design Motorola 2N6083 2N5642 AN721/D broadband impedance transformation 2N6083 EE3990 118-136 mhz AN721/D abstract
datasheet frame
Abstract: , generally consists of only a capacitance COUT. The internal resistance of the transistor is supposed to be , is the load resistance, seen at the collector-emitter terminals, and RT the internal transistor , 1) R1 2 4 0.65 1 8 10 1.35 1.46 16 1.73 (b) 0.316 - j0.465 (1 + j1.47 , resistance of a transistor, the internal transistor resistance may not be equal to R1. In this case X3 = , within the band despite the intrinsic gain decrease of a transistor with frequency. Tables have been ... Original
datasheet

16 pages,
713.28 Kb

2N5642 2N6083 AN267 AN282A AN721 shunt reactor 2n6083 an721 AN721 abstract
datasheet frame
Abstract: , generally consists of only a capacitance C OUT. The internal resistance of the transistor is supposed to , resistance, seen at the collector-emitter terminals, and RT the internal transistor resistance equal to , the above values of Q. If R1 is the load resistance of a transistor, the internal transistor , easily, calculated for equal frequencies: (b) 0.316 ­ j0.465 (1 + j1.47) R1 = 1 R2 = 0.1 (a , despite the intrinsic gain decrease of a transistor with frequency. Tables have been computed elsewhere ... Original
datasheet

16 pages,
252.85 Kb

MTT-19 Motorola 2N6083 Diode jx4 AN721/D AN721 2N6083 2N5642 AN721/D abstract
datasheet frame
Abstract: internal resistance of the transistor is supposed to be much higher than the load and is normally , transistor resistance equal to: 1 T, (CTC + CDC) , REV 0 MOTOROLA SEMICONDUCTOR APPLICATION , the above values of Q. If R1 is the load resistance of a transistor, the internal transistor , ) 0.316 - j0.465 (1 + j1.47) n­1 n For network (a) normally, at point (M), Z1 and Z2 are , employed to obtain a constant gain within the band despite the intrinsic gain decrease of a transistor ... Original
datasheet

16 pages,
469.86 Kb

shunt reactor 2N6083 AN721 Diode jx4 motorola an-282a application motorola an721 application MTT-19 2N5642 MOTOROLA BOOK POWER CONVERSION Motorola 2N6083 datasheet abstract
datasheet frame
Abstract: View) Note: The backside of the package is the source terminal for the transistor. Features · , j6.70 2.30 + j6.90 2.30 + j7.00 1.60 + j5.00 1.33 + j3.90 1.29 + j3.54 0.98 + j1.45 0.29 + j1.47 Zload , Inductors 7 Turn, #16 AWG, ID = 0.3 Inductors RF Power LDMOS Transistor 11 , 1/4 W Chip Resistor Balun Flex ... Original
datasheet

21 pages,
1163.17 Kb

mrfe6vp61k25h 87.5-108 mhz w power C5750X7S2A106MT ATC100B102KT50XT MRFE6VP61K25H MRFE6VP61K25H abstract
datasheet frame

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ST | 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, ADC, 16-BIT 16-BIT 16-BIT 16-BIT TIMERS, SPI, SCI INTERFACES Datasheet 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, ADC, 16-BIT 16-BIT 16-BIT 16-BIT TIMERS, SPI, SCI INTERFACES ST72124J2 ST72124J2 ST72124J2 ST72124J2 ST72124J ST72124J ST72124J ST72124J ST72314J/N ST72314J/N ST72314J/N ST72314J/N ST72314J2 ST72314J2 ST72314J2 ST72314J2 ST72314J4 ST72314J4 ST72314J4 ST72314J4 ST72314N2 ST72314N2 ST72314N2 ST72314N2 ST72314N4 ST72314N4 ST72314N4 ST72314N4 ST72334J/N ST72334J/N ST72334J/N ST72334J/N ST72334J2 ST72334J2 ST72334J2 ST72334J2 ST72334J4B6 ST72334J4B6 ST72334J4B6 ST72334J4B6 ST72334J4 ST72334J4 ST72334J4 ST72334J4 ST72334N2 ST72334N2 ST72334N2 ST72334N2 ST72334N4 ST72334N4 ST72334N4 ST72334N4 ST72C124J2 ST72C124J2 ST72C124J2 ST72C124J2 ST72C314J2 ST72C314J2 ST72C314J2 ST72C314J2 ST72C314J4 ST72C314J4 ST72C314J4 ST72C314J4 ST72C314N2 ST72C314N2 ST72C314N2 ST72C314N2 ST72C314N4 ST72C314N4 ST72C314N4 ST72C314N4 ST72C334J2 ST72C334J2 ST72C334J2 ST72C334J2 ST72C334J4 ST72C334J4 ST72C334J4 ST72C334J4 ST72C334N2 ST72C334N2 ST72C334N2 ST72C334N2 ST72C334N4 ST72C334N4 ST72C334N4 ST72C334N4 ST72C314J2T6 ST72C314J2T6 ST72C314J2T6 ST72C314J2T6 ST72C31 ST72C31 ST72C31 ST72C31
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STMicroelectronics 09/02/2001 287.83 Kb HTM 6816.htm
ST | 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, ADC, 16-BIT 16-BIT 16-BIT 16-BIT TIMERS, SPI, SCI INTERFACES Datasheet 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, ADC, 16-BIT 16-BIT 16-BIT 16-BIT TIMERS, SPI, SCI INTERFACES ST72124J2 ST72124J2 ST72124J2 ST72124J2 ST72124J ST72124J ST72124J ST72124J ST72314J/N ST72314J/N ST72314J/N ST72314J/N ST72314J2 ST72314J2 ST72314J2 ST72314J2 ST72314J4 ST72314J4 ST72314J4 ST72314J4 ST72314N2 ST72314N2 ST72314N2 ST72314N2 ST72314N4 ST72314N4 ST72314N4 ST72314N4 ST72334J/N ST72334J/N ST72334J/N ST72334J/N ST72334J2 ST72334J2 ST72334J2 ST72334J2 ST72334J4 ST72334J4 ST72334J4 ST72334J4 ST72334N2 ST72334N2 ST72334N2 ST72334N2 ST72334N4 ST72334N4 ST72334N4 ST72334N4 ST72C124J2 ST72C124J2 ST72C124J2 ST72C124J2 ST72C314J2 ST72C314J2 ST72C314J2 ST72C314J2 ST72C314J4 ST72C314J4 ST72C314J4 ST72C314J4 ST72C314N2 ST72C314N2 ST72C314N2 ST72C314N2 ST72C314N4 ST72C314N4 ST72C314N4 ST72C314N4 ST72C334J2 ST72C334J2 ST72C334J2 ST72C334J2 ST72C334J4 ST72C334J4 ST72C334J4 ST72C334J4 ST72C334N2 ST72C334N2 ST72C334N2 ST72C334N2 ST72C334N4 ST72C334N4 ST72C334N4 ST72C334N4 D
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STMicroelectronics 02/11/2000 275.91 Kb HTM 6816-v2.htm
ST | 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, ADC, 16-BIT 16-BIT 16-BIT 16-BIT TIMERS, SPI, SCI INTERFACES Datasheet 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, ADC, 16-BIT 16-BIT 16-BIT 16-BIT TIMERS, SPI, SCI INTERFACES ST72124J2 ST72124J2 ST72124J2 ST72124J2 ST72124J ST72124J ST72124J ST72124J ST72314J/N ST72314J/N ST72314J/N ST72314J/N ST72314J2 ST72314J2 ST72314J2 ST72314J2 ST72314J4 ST72314J4 ST72314J4 ST72314J4 ST72314N2 ST72314N2 ST72314N2 ST72314N2 ST72314N4 ST72314N4 ST72314N4 ST72314N4 ST72334J/N ST72334J/N ST72334J/N ST72334J/N ST72334J2 ST72334J2 ST72334J2 ST72334J2 ST72334J4 ST72334J4 ST72334J4 ST72334J4 ST72334N2 ST72334N2 ST72334N2 ST72334N2 ST72334N4 ST72334N4 ST72334N4 ST72334N4 ST72C124J2 ST72C124J2 ST72C124J2 ST72C124J2 ST72C314J2 ST72C314J2 ST72C314J2 ST72C314J2 ST72C314J4 ST72C314J4 ST72C314J4 ST72C314J4 ST72C314N2 ST72C314N2 ST72C314N2 ST72C314N2 ST72C314N4 ST72C314N4 ST72C314N4 ST72C314N4 ST72C334J2 ST72C334J2 ST72C334J2 ST72C334J2 ST72C334J4 ST72C334J4 ST72C334J4 ST72C334J4 ST72C334N2 ST72C334N2 ST72C334N2 ST72C334N2 ST72C334N4 ST72C334N4 ST72C334N4 ST72C334N4 Document Format Size Docume
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STMicroelectronics 20/10/2000 273.03 Kb HTM 6816-v1.htm