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EL5252IY-T7 Intersil Corporation 1 CHANNEL, VIDEO AMPLIFIER, PDSO10, 3 MM, MSOP-10
EL5252IY-T13 Intersil Corporation 1 CHANNEL, VIDEO AMPLIFIER, PDSO10, 3 MM, MSOP-10
EL5252IY Intersil Corporation 1 CHANNEL, VIDEO AMPLIFIER, PDSO10, 3 MM, MSOP-10
PCM5252RHBT Texas Instruments 114dB 32-Bit Stereo Differential-Output DAC With miniDSP and Smart Amp Capability 32-VQFN -25 to 85
TPS65252RHD Texas Instruments IC 3.5 A SWITCHING REGULATOR, 2200 kHz SWITCHING FREQ-MAX, PQCC28, 5 x 5 MM, GREEN, PLASTIC, VQFN-28, Switching Regulator or Controller
TPS65252RHDR Texas Instruments 4.5V to 16V input, 3A/2A output dual buck converter with an USB switch 28-VQFN -40 to 85

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transistor ir 5252

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: and a high speed transistor. The photodetector is junction isolated from the transistor to reduce , (TA70°C) . 45 mW Detector (Si Photodiode + Transistor) Supply , Logic High Supply Current ICCH 0.001 Input Reverse Current IR 0.5 Input Capacitance , Transistor DC Current Gain IF=16 mA, VCC=4.5 V IO=2.4 mA 0.5 0.01 IO=1.1 mA IO=0.8 mA , 60 80 Ambient Temperature in °C 100 0.2 .0001 5­252 .001 IF in A .01 .1 Infineon Technologies
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SFH6315 SFH6316 SFH6343 5252 F led HCPL0453 HCPL0500 HCPL0501 c 5252 transistor SFH6315--HCPL0500 SFH6316--HCPL0501 SFH6343--HCPL0453
Abstract: information! # M\MW Product Bulletin 5252 January 1985 cft-a 3 High Speed Optocouplers Types 6N135, 6N136 , of each device consists of a photodiode driving an open collector transistor, inherently fester than , * Input Reverse Breakdown Voltage 5.0 V IR = 10.0 /iA, Ta=25°C CIN* Input Capacitance 42 pf f , * 1tmA VCC-5.0V â'" 6N135(R UillS (R L-4.IIà L â  1JW ) ir' â'"* \ tfHL /\ / â" I -
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QPI2502 OPI2502 GN135 gn136 6ni36 6N130 1A26 VCC46 E58730 CL-15 7500B
Abstract: the internal output transistor is off, the output voltage will be pulled up to the external positive , /LMV7239 Application Section (Continued) IR Receiver The LMV7239 is an ideal candidate to be used , . Crystal Oscillator DS101359-23 FIGURE 6. IR Receiver www.national.com 10 2-22 2.0 , required [(SC)CSP-5-252]. The LMV7239 passed all required reliability tests with the exception of ESD MM , Analysis (PQA#2000260054) indicates damage at 500 4 1000 4 1500 4 2000 4 2500 4 the output transistor National Semiconductor
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sot 23 marking code c20a TRANSISTOR Q35 B18 SOT23-5 M000064094 marking C20 sot23-5 LMV7235/39 LMV7235/LMV7239 LMV7235 SC70-5 RSC200001698 LMV7239M5
Abstract: transistor) drive applications. These photocouplers are capable of driving the gates of IGBTs and power , 25 °C (Ta = ­20° ~ 70°C unless otherwise specified) Symbol VF VF / Ta IR IOPH VCC = 30 V (*1 , Alexandra Technopark, Singapore 119968 Tel: (278)5252 Fax: (271)5155, (270)6056 Tsurong Xiamen Xiangyu Toshiba
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tlp250 application note tlp250 TLP250 application tlp2501 igbt drive tlp250 TLP251 TLP250 TLP250F VDE0884-
Abstract: mesh emitter transistor) design. Compared with conventional bipolar transistors, the Hi-Met III , superior hFE characteristics. The low saturation voltage minimizes transistor losses in a circuit, while , V, IO = 0.7 A, VF = 0.4 V (max) @IF = 0.5 A, IR = 100 A (max) @VR = 10 V Chip design Low-withstanding voltage Hi-Met III (3rd-generation high-efficiency mesh emitter transistor) High-withstanding , pattern allows the transistor units to be distributed at high density and with an even distance between Toshiba
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2SC5755 TPC6801 WJ 5252 F Battery chargers for portable dvd china MARKING WB SOT-89 SOT89 PNP marking GA transistor 3405 npn
Abstract: HSDL-9100 General Application Guide Application Note 5252 Introduction General product , emitter and photodiode. The HSDL-9100 has employed the reflective IR technology. The optoelectronic , Figure 1. The emitter will emit IR light pulse. This light travels out in the field of view and will , detected. On the other hand, the detector will detect the reflected IR light pulse with object hit , Figure 6. Based on the above designated circuit, the PWM port is used to drive the transistor. Hence Avago Technologies
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proximity sensor block diagram sunlight detector device photoconductive light sensor reflective ir ultraviolet detector 5mm light depending resistor HSDL9100 5989-4400EN
Abstract: resistor 2 Transistor with built-in resistor S-MOS S -MOS Family Surface-Mount S-MOS Package , ) High-density mounting MOS Size: 1.6 x 1.6 Standard Transistor SSM 3 K 01 F (TE85L) Tape-packed , chopper) In Out Vin Control IC 4 IR (uA) VF (V) Max 50 100 100 50 100 S , . 2.9 C) he pad area, and the nature ividual device into account. 0.01 0.1 1 IR (uA , 106 20 0.5 16 10 125 12 0.5 VF (V) 0.46 IR(uA) Max @IF(A) Max 0.3 Toshiba
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SSM3K7002 ESM 310 SSM3J16FU zener diode reference guide SSM3K03TE US6 KEC 3402C-0209
Abstract: transistor is off, the output voltage will be pulled up to the external positive voltage. Comparator with , /LMV7239 2.0 DEVICE INFORMATION Application Section IR Receiver The LMV7239 is an ideal candidate , . (Continued) DS101359-22 FIGURE 5. Crystal Oscillator DS101359-23 FIGURE 6. IR Receiver , required [(SC)CSP-5-252]. The LMV7251/5 passed all required reliability tests with the exception of ESD National Semiconductor
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LMV7219 C20A eme marking sot23 LMV7251 LMV7255 sot 23-5 marking code c21a LMV7251/55 LMV7251/LMV7255 SC-70 MV7239 CS80C
Abstract: Number AGC 1SV128 1SV271 1SV307 JDP2S10U* Type Package Bipolar transistor S-Mini 2SC2712 S-Mini 2SK711 USM 2SK1875 SMV HN3G01J J-FET RF Amp Dual transistor Part , Package Mixer 1SV237 USM Application Bipolar transistor S-Mini 1SV172 * New , Bipolar transistor S-Mini USM RF Amp UFM J-FET S-Mini Part Number Application , * MT3S19TU* MT3S20TU* 2SK211 2SK210 * New product 5 Type Bipolar transistor Type Bipolar Toshiba
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2sc5108 toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver microwave Duplexer 2SK403 BCE0003E
Abstract: ratings> max.) ir DUT MOSFET Power Dissipation PD(W) 3.5 Improved power dissipation by , 3 18.4 (max) 13.5 ± 0.5 1 0.65 ons S-MOS S-MOS, Bipolar Transistor VS-6 VS , , Regulator, Bipolar Transistor TSSOP-8 SOP-8 SP 8 6.7 max 5 0.05 1.75 ± 0.15 0.25 , 9.2 max 0.9 2.5 max 2 Power MOSFET, Rectifier, Regulator, Bipolar Transistor 3 4 , , Singapore 119968 Tel: (6278)5252 Fax: (6271)5155 23F, HSBC Tower, 101 Yin Cheng East Road, Pudong New Toshiba
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TPC6004 tpc8107 mosfet tpc8107 TPC8107 application circuit TPCS8210 application TPC8110 7179 3525C-0209
Abstract: transistor, 1 S-MOS device tions 2.9 2.0 2.5 1.5 2.1 SSM 1.25 ESM 0.8 1.6 1.6 , -in-1 HN4C05JU The HN4C05JU is the smallest 2-in-1 400-mA transistor available today. Two NPN transistors are , transistor 300 VCE (sat) (mV) Unit: mm 2.0 2.1 1.25 @IC/IB = 20, Ta = 25°C 1000 Internal , HN7G01FU comprising a low-VCE(sat) transistor and a MOSFET The HN7G01FU incorporates a transistor and a power MOSFET in a single package. The device comprises a low-VCE(sat), 400mA PNP-type transistor and a Toshiba
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HN4C06J te85l F 1SS302 SUFFIX TE85L Toshiba rn4983 HN1B04FE
Abstract: (IPDs) For Stepping Motors (Transistor Arrays) Packaging Options for Motor Drivers and , The above package photos are not actual size. WCSP6 Transistor Arrays , Stepping Motor Drivers and Transistor Arrays . 13 Microcontrollers , Commutation Frequency Setting IR Overcurrent Protection Circuit Lead Angle Setting OC SEL_LAP , Transistor Arrays and Linear Motor Drivers Transistor Arrays Transistor arrays designed for stepping Toshiba
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TB9061FNG TB6612 toshiba tb6560 TB9056FNG TB6584FNG TB9067FNG QFP100 LQFP44 DIP16 SSOP24 LQFP48 LQFP100
Abstract: Application Type Package 1SV312 JDP4P02U * New product Part Number RF Amp Dual transistor 4 2SC2712 2SK709 S-Mini 2SK711 USM J-FET 2SC2458 T O-92 Bipolar transistor Mini , transistor Mini 2SC2670 2SC2715 S-Mini 2SC2716 RECOMMENDED PRODUCTS BY APPLICATION 1-2 , Single Schottky diode Application Dual Type Bipolar transistor RF Amp USC fSC S-Mini , S-Mini 2SC2714 2SC4215 SSM Bipolar transistor Package USM Mixer Type 1SV225 Toshiba
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sec 2sc5088 samsung UHF/VHF TV Tuner transistor 2SC5066 2SC5066 datasheet RF Bipolar Transistor MT6L04AE 800-MH 900-MH DCS1800 BCE0003D S-167
Abstract: . 20 A.3.45 Transistor , . 20 A.4 TRANSISTOR DEFINITIONS , . 21 A.4.2.2 Unijunction transistor , . 35 B.4.3 Unijunction transistor symbols DEPARTMENT OF DEFENSE
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transistor A562 A561 transistor trapatt diode A4 transistor A562 transistor transistor a561 MIL-PRF-19500P MIL-PRF-19500N
Abstract: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA836TF FEATURES_ · LOW NOISE: Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA Q2:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA OUTLINE DIMENSIONS (Units in mm) Package O utline TS06 (Top View) · , i. ^ r o - * ^ 0 ( D U iw r o ^ ü i^ c o - i« £ iü ir o c D ^ S u E D "si CO 0 U l 00 CD Ò , 54.31 52.52 50.73 47.90 41.96 35.50 MAG 0.87 0.70 0.55 0.45 0.37 0.32 0.28 0.24 0.21 0.19 0.15 0.10 0.07 -
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MJE 13031 054S1 cd 4637 NE685 NE688 NE68530 NE68830 UPA836TF-T1 UPA833TF
Abstract: in the fS6 package · Mini-MOS Family · One-gate CMOS (L-MOS) · Transistor Array series (S-Driver , Interface Drivers Bipolar Transistor Arrays/DMOS Transistor Arrays S-Driver/Multi-Chip Transistor Arrays , product *: Under development IR (uA) Max 10.0 10.0 10.0 10.0 10.0 10.0 10.0 General-Purpose , (mV/°C) Forward Voltage VF (V) Reverse Current IR (mA) Package Typ. Max Max Zener , Maximum Ratings IO (A) VRRM (V) 0.5 800 IR (uA) Max 10 VF (V) Max 1.3 IF (A) 0.5 200 Toshiba
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ESM 740 transistor SMD t04 51 D245A transistor SMD t04 LM2804 Solar Garden Light Controller 4 pin 1020/TL V1022 SCE0003A
Abstract: (Transistor Arrays) Packaging Options for Motor Drivers and Microcontrollers Microcontrollers Motor , . 13, 14, 15 Transistor Arrays . , Transistor Array Filter Cleaner Motor Driver Filter Cleaner Fan Motor Single-Chip Inverter IC , Commutation Frequency Setting IR Overcurrent Protection Circuit Lead Angle Setting OC SEL_LAP , Transistor arrays designed for stepping motor driving are available with a variety of functions, circuit Toshiba
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TC7600FNG TB6560AHQ TB62214 tmp89fw24 tb6560ahq application tb6572 DIP20 HSIP10 HZIP25 SSOP30 DIP26 QFP52
Abstract: Radio-Frequency Bipolar Transistor Absolute Maximum Ratings (Ta = 25°C) Part Number Package MT6L63FS , ) IR (Max) VF (Max) 30 () 2 0.7 6 2 0.7 6 0.85 2 0.7 15 0.85 , -4-252 TIM1414-5-252 TIM1414-7-252 TIM1414-8-252 TIM1314-9L TIM1414-10LA-252 TIM1414-15-252 TIM1314 , . Tel: (6278)5252 Fax: (6271)5155 Tel: (011)2331-8422 Fax: (011)2371-4603 Toshiba Electronics Toshiba
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2SC941TM 2SC3136 2sc5066 MT3S111P MT3S111 MT4S200T MT3S106 2-13B1A SCE0004I 2SC380TM
Abstract: Dual-gate FET Bipolar transistor 3SK225 3SK292 3SK257 3SK207 3SK249 MT3S04A 1SS295 (dual , Package Part Number 2SC4244 SMQ Bipolar transistor Band 1SS312 1SS364 USM RF Amp , Common collector Common base Bipolar transistor UHF Common collector S-Mini 2SC3547A , 2SC4251 2SC4246 2SC3125 2SC3124 2SC3121 USM Common base S-Mini Mixer Bipolar transistor , features. Ideal for TV sets I2C bus controllable Passes the IR remote control signal received at the Toshiba
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Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 SCE0001C SCE0001D
Abstract: 2010/9SCE0004K Dual Radio-Frequency Bipolar Transistor Absolute Maximum Ratings (Ta = 25°C) Part , 20 0.94 50 0.32 1 1.5 1 100 CST2 CST2 VR (V) IR (Max) VF (Max , -4L TIM1213-4UL TIM1213-8L TIM1213-8ULA TIM1213-10L TIM1213-15L TIM1414-2-252 TIM1414-4-252 TIM1414-5-252 , Shanghai Head Office Toshiba Electronics Asia (Singapore) Pte. Ltd. Tel: (6278)5252 Fax: (6271)5155 Toshiba
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MT4S300T TGI0910-50 TA4032FT VHF-UHF Band oscillator S8850AF MT4S300U 2SC1923
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