NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: transistor DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification , specification NPN 4 GHz wideband transistor BFQ34T BFQ34T N AI1ER PHILIPS/DISCRETE b^E D LIMITING VALUES in , specification NPN 4 GHz wideband transistor BFQ34T BFQ34T - N AflER PHILIPS/DISCRETE blE T> CHARACTERISTICS Ti = 25 , = 60 mA; VCE = 10 V; RL = 75 i2; T^ = 25 °C; V, = Vp = V0 = 48 dBmV; fp = 560 MHz; Vq = V0 = 50 , V; RL = 75 O; T^ = 25 °C; Vp = V0 at d, = -60 dB; fp = 287.25 MHz; Vq = V0 -6 dB; fq = 294.25 ... | OCR Scan |
9 pages, |
UBB361 FP 801 ON4497 BFQ34T transistor fp 1016 ON4497 abstract |
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| Abstract: Philips Semiconductors Product specification NPN 4 GHz wideband transistor -T-33-QS -T-33-QS BFQ34T BFQ34T PHILIPS INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband , wideband transistor BFQ34T BFQ34T PHILIPS INTERNATIONAL SbE D m 711DA2L 711DA2L. DDHiMST 3SS HPHIN LIMITING VALUES in , wideband transistor BFQ34T BFQ34T PHILIPS INTERNATIONAL 5bE ]> â- 7110fl2b OQ4S4bO 077 â- PHIN CHARACTERISTICS Tj , dBmV; fp = 560 MHz; Vq = V0 = 50 dBmV; fq = 250 MHz; measured at f^ = 810 MHz. 3. dlm = -60 dB (DIN ... | OCR Scan |
9 pages, |
QS 100 NPN Transistor FP 801 ON4497 transistor fp 1016 BFQ34T -T-33-QS -T-33-QS abstract |
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| Abstract: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 BFG591 FEATURES • , amplifiers and RF communications subscriber equipment. DESCRIPTION NPN silicon planar epitaxial transistor , transistor BFG591 BFG591 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL , Manufacturer Philips Semiconductors Product specification NPN 7 GHz wideband transistor CHARACTERISTICS Tj , ; Vq = V0 -6 dB; Vr = V0 -6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr= 803.25 MHz; measured at f(p+q.r ... | OCR Scan |
10 pages, |
DIN45004B SL 100 NPN Transistor 2T3 transistor transistor fp 1016 BFG591 Application Notes equivalent of SL 100 NPN Transistor BFG591 BFG591 amplifier BFG591 abstract |
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| Abstract: transistor N AUER PHILIPS/DISCRETE BFQ18A BFQ18A b?E D DESCRIPTION NPN transistor in a plastic SOT89 envelope , specification - N AP1ER PHILIPS/DISCRETE b7E J>- NPN 4 GHz wideband transistor BFQ18A BFQ18A THERMAL RESISTANCE , V; RL = 75 Î2; Vp = V0 = 700 mV; fp = 795.25 MHz; Vq = VQ -6 dB; f„ = 803.25 MHz; Vr = VQ -6 dB;fr = , Product specification N AMER PHILIPS/DISCRETE b7E ]> NPN 4 GHz wideband transistor BFQ18A BFQ18A f = 40 - 860 , ... | OCR Scan |
4 pages, |
Lc 0427 BFQ18A 17-25 sot89 transistor fp 1016 BFQ18A abstract |
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| Abstract: MITSUBISHI MICROCOMPUTERS M35052-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION , circuit PIN CONFIGURATION (TOP VIEW) M35052-XXXSP M35052-XXXSP The M35052-XXXSP/FP is TV screen display , package, M35052-XXXFP M35052-XXXFP is housed in a 20-pin shrink SOP package. For M35052-001SP/FP that is a standard ROM version of M35052XXXSP/FP respectively, the character pattern is also mentioned. 17 , VSS 16 15 HOR EDO VSS MITSUBISHI MICROCOMPUTERS M35052-XXXSP/FP SCREEN ... | Original |
37 pages, |
M35052-XXXFP transistor c816 transistor A916 transistor 1a16 M35052-XXXSP b716 transistor HP 4716 F016 EF16 a016 transistor transistor fp 1016 datasheet abstract |
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| Abstract: MITSUBISHI MICROCOMPUTERS M35052-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS , circuit PIN CONFIGURATION (TOP VIEW) M35052-XXXSP M35052-XXXSP The M35052-XXXSP/FP is TV screen display , package, M35052-XXXFP M35052-XXXFP is housed in a 20-pin shrink SOP package. For M35052-001SP/FP that is a standard ROM version of M35052XXXSP/FP respectively, the character pattern is also mentioned. 17 , VSS 16 15 HOR EDO VSS MITSUBISHI MICROCOMPUTERS M35052-XXXSP/FP SCREEN ... | Original |
36 pages, |
3F16 4E16 BA 4916 c516 transistor EF16 F016 HP 4716 M35052-XXXFP M35052-XXXSP pin diagram of ic 6116 transistor 1a16 transistor A916 transistor d716 6116 memory M35052-XXXSP/FP M35052-XXXSP/FP abstract |
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| Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BFG591 BFG591 NPN 7 GHz wideband transistor Product , Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 BFG591 FEATURES DESCRIPTION · High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 , pF Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 BFG591 , transistor BFG591 BFG591 CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER ... | Original |
12 pages, |
MGC801 DIN45004B MJE 340 transistor BFG591 BFG591 amplifier BFG591 Application Notes BFG591 abstract |
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| Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BFG591 BFG591 NPN 7 GHz wideband transistor Product , Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 BFG591 FEATURES DESCRIPTION · High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 , 2 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 BFG591 , transistor BFG591 BFG591 CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER ... | Original |
12 pages, |
DIN45004B BFG591 BFG591 amplifier BFG591 abstract |
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| Abstract: Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520W BFG520W BFG520W/X BFG520W/X , ( 1 - S< |l ) { 1 - Soo ) 2. lc = 20mA;VcE = 6V;RL = 50£2;Tamb = 25oC; 1111 1 221 fp = 900 MHz; fq = , 20 mA; VCE = 6 V; Vp = VQ; Vq = V0 -6 dB; Vr = V0 -6 dB; RL = 75 Q; fp = 795.25 MHz; fq = 803.25 MHz , 75 £2; Tamb = 25 °C; fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz. July 1994 , Product specification NPN 9 GHz wideband transistor MLBBOT 150-- 1111 H-- i 11 MM-- i 11 nu vCE = 6 v. ... | OCR Scan |
13 pages, |
DIN45004B BFG520W N4 TAM V 904 RL 805 BFG520W/X BFG520W/XR BFG520W abstract |
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| Abstract: transistor Product specification Supersedes data of 2002 Jan 07 2002 Feb 04 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 BFQ591 FEATURES PINNING · High power , equipment. handbook, halfpage DESCRIPTION 1 NPN wideband transistor in a SOT89 plastic package. , 7 GHz wideband transistor BFQ591 BFQ591 LIMITING VALUES In accordance with the Absolute Maximum , UNIT 38 K/W Philips Semiconductors Product specification NPN 7 GHz wideband transistor ... | Original |
12 pages, |
transistor fp 1016 philips MATV amplifiers MARKING PQ* SOT89 DIN45004B BFQ591 M3D109 M3D109 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| transistors BFG520W BFG520W BFG520W BFG520W; BFG520W/X BFG520W/X BFG520W/X BFG520W/X SPICE parameters for the BFG520W BFG520W BFG520W BFG520W die SEQUENCE No. PARAMETER VALUE UNIT 1 IS 1.016 transistors Rev. 04 - 21 November 2007 Product data sheet NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W BFG520W BFG520W BFG520W; BFG520W/X BFG520W/X BFG520W/X BFG520W/X FEATURES • High power gain • Low noise figure • High transition in fibre-optic systems. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual Product specification NPN 9 GHz wideband transistors BFG520W BFG520W BFG520W BFG520W; BFG520W/X BFG520W/X BFG520W/X BFG520W/X LIMITING VALUES In accordance with www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG520W_X_N_4.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| transistors BFG520W BFG520W BFG520W BFG520W; BFG520W/X BFG520W/X BFG520W/X BFG520W/X SPICE parameters for the BFG520W BFG520W BFG520W BFG520W die SEQUENCE No. PARAMETER VALUE UNIT 1 IS 1.016 transistors Rev. 04 - 21 November 2007 Product data sheet NXP Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W BFG520W BFG520W BFG520W; BFG520W/X BFG520W/X BFG520W/X BFG520W/X FEATURES • High power gain • Low noise figure • High transition in fibre-optic systems. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual Product specification NPN 9 GHz wideband transistors BFG520W BFG520W BFG520W BFG520W; BFG520W/X BFG520W/X BFG520W/X BFG520W/X LIMITING VALUES In accordance with www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG520W_X_N_4.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| Semiconductors, SC14 1995 Sep 04 DISCRETE SEMICONDUCTORS BFG591 BFG591 BFG591 BFG591 NPN 7 GHz wideband transistor Philips = 900 MHz; Tamb = 25 °C21 NPN 7 GHz wideband transistor BFG591 BFG591 BFG591 BFG591 FEATURES • High power gain • Low noise equipment. DESCRIPTION NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. PINNING 1995 Sep 04 2 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 BFG591 BFG591 BFG591 Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 BFG591 BFG591 BFG591 CHARACTERISTICS Tj = 25 °C (unless www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG591_2.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| Connection (with pin OUTA). The output stage is a "H" bridge formed by four transistors and four diodes time of the lower power transistors. The pulse generator is a monostable triggered by the rising edge pass filter R C C C . The lower power transistor are disabled when the sense voltage exceeds the = 10V to 45V, T amb = 0 to 70 5 C (T amb = 25 5 C for TEA3718FP/SFP) unless otherwise specified) Symbol ) - 0.8 - V I ref Reference Input Current, V R = 5V - 0.4 1 mA V sat Source Diode Transistor Pair www.datasheetarchive.com/files/stmicroelectronics/books/ascii/docs/1525.htm |
STMicroelectronics | 25/05/2000 | 18.06 Kb | HTM | 1525.htm |
| pin OUTA). The output stage is a "H" bridge formed by four transistors and four diodes suitable for lower power transistors. The pulse generator is a monostable triggered by the rising edge of the feedback to this input through the low pass filter R C C C . The lower power transistor are V, T amb = 0 to 70 5 C (T amb = 25 5 C for TEA3718FP/SFP) unless otherwise Input Current, V R = 5V - 0.4 1 mA V sat Source Diode Transistor Pair Saturation Voltage www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1525-v1.htm |
STMicroelectronics | 25/05/2000 | 17.16 Kb | HTM | 1525-v1.htm |
| ST | MONITOR AMPLIFIER TEA7532DP TEA7532DP TEA7532DP TEA7532DP TEA7532FP MONITOR AMPLIFIER Document Number: 1068 Date Update: 08/04/94 Pages: 16 The document is available in the ) TEA7532FP (SO16) BLOCK DIAGRAM 1/16 PIN DESCRIPTION N 5 Symbol Description 1 ADJ Adjust Internal - sulting in transistor (TR) being switched off, resulting in zero current flow in resistor R. This state to the supply voltage. TEA7532 TEA7532 TEA7532 TEA7532 10/16 THEORETICAL VOLTAGE ON PIN 3 Figure 19 : - The value of R www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1068.htm |
STMicroelectronics | 02/04/1999 | 13.78 Kb | HTM | 1068.htm |
| ST | MONITOR AMPLIFIER Datasheet MONITOR AMPLIFIER TEA7532DP TEA7532DP TEA7532DP TEA7532DP TEA7532FP Document Format Size Document Number Date Update Pages ORDERING NUMBERS : TEA7532DP TEA7532DP TEA7532DP TEA7532DP (DIP16 DIP16 DIP16 DIP16) TEA7532FP (SO16) BLOCK DIAGRAM 1/16 PIN DESCRIPTION N 5 Symbol below the reference voltage 1.1 V, re- sulting in transistor (TR) being switched off, resulting in zero ) or discharges (current source OFF) according to the supply voltage. TEA7532 TEA7532 TEA7532 TEA7532 10/16 THEORETICAL www.datasheetarchive.com/files/stmicroelectronics/books/ascii/docs/1068.htm |
STMicroelectronics | 25/05/2000 | 16.37 Kb | HTM | 1068.htm |
| ST | MONITOR AMPLIFIER TEA7532DP TEA7532DP TEA7532DP TEA7532DP TEA7532FP MONITOR AMPLIFIER Document Number: 1068 Date Update: 08/04/94 Pages: 16 The document is available in the ) TEA7532FP (SO16) BLOCK DIAGRAM 1/16 PIN DESCRIPTION N 5 Symbol Description 1 ADJ Adjust Internal - sulting in transistor (TR) being switched off, resulting in zero current flow in resistor R. This state to the supply voltage. TEA7532 TEA7532 TEA7532 TEA7532 10/16 THEORETICAL VOLTAGE ON PIN 3 Figure 19 : - The value of R www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1068-v2.htm |
STMicroelectronics | 14/06/1999 | 13.74 Kb | HTM | 1068-v2.htm |
| ST | MONITOR AMPLIFIER Datasheet MONITOR AMPLIFIER TEA7532DP TEA7532DP TEA7532DP TEA7532DP TEA7532FP Document Format Size (full duplex) DIP16 DIP16 DIP16 DIP16 SO16 ORDERING NUMBERS : TEA7532DP TEA7532DP TEA7532DP TEA7532DP (DIP16 DIP16 DIP16 DIP16) TEA7532FP (SO16) BLOCK DIAGRAM below the reference voltage 1.1 V, re- sulting in transistor (TR) being switched off, resulting in the supply voltage. TEA7532 TEA7532 TEA7532 TEA7532 10/16 THEORETICAL VOLTAGE ON PIN 3 Figure 19 : - The value of www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1068-v1.htm |
STMicroelectronics | 25/05/2000 | 15.55 Kb | HTM | 1068-v1.htm |
| VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL213 BUL213 BUL213 BUL213 1021 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL216 BUL216 BUL216 BUL216 1022 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL381 BUL381 BUL381 BUL381 BUL382 BUL382 BUL382 BUL382 1025 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL416 BUL416 BUL416 BUL416 1026 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL510 BUL510 BUL510 BUL510 1027 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL57 BUL57 BUL57 BUL57 1028 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL67 BUL67 BUL67 BUL67 1029 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL810 BUL810 BUL810 BUL810 1033 SUBSCRIBER LINE INTERFACE www.datasheetarchive.com/files/stmicroelectronics/stonline/db/psearch.txt |
STMicroelectronics | 02/02/2001 | 240.03 Kb | TXT | psearch.txt |