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TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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GT30J110SRA
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Toshiba Electronic Devices & Storage Corporation
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IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
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TLP5702H
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Toshiba Electronic Devices & Storage Corporation
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Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
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TLP5705H
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Toshiba Electronic Devices & Storage Corporation
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Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
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TK190U65Z
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Toshiba Electronic Devices & Storage Corporation
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MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL |
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