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PUMF11 T/R NXP Semiconductors NPN resistor-equipped transistor; PNP general purpose transistor ri Buy
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TB100ML NXP Semiconductors TB100 - NPN power transistor ri Buy

transistor c245

Catalog Datasheet Results Type PDF Document Tags
Abstract: PD - 9.773 IRGBF30F IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C · Switching-loss rating includes all "tail" losses · Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) 3.7V G @VGE = 15V, IC = 11A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher , Fig. 2 - Typical Output Characteristics C-245 IRGBF30F IRGBF30F 5.0 V G E = 15 V V C E , C o llec ... Original
datasheet

6 pages,
102.4 Kb

C-246 C-247 C-248 C246 D-12 IRGBF30F C247 transistor c247 c245 transistor transistor c243 transistor c246 transistor c245 IRGBF30F abstract
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Abstract: Velocidade de Hardware 7 1 entrada 1 fase 2 entradas 1 fase 2 entradas 2 fases C243 C244 C245 , refere a saida transistor (tipo N); S se refere a safda do transistor (tipo P). Para datas de laníamente , desaída Certificados DVP16ES200R DVP16ES200R Relé 8 8 DVP16ES200T DVP16ES200T Faixa de Potencia: 100 - 240VCA 240VCA Transistor 8 8 , pontos de 100kHz; 2 pontos de 10kHz (Modelos de salda de transistor) Porta COM: 1 porta RS-232 RS-232 e 2 portas RS-485 RS-485 incorporadas; compatlvel com protocolo Modbus ASCII/ RTU; Transistor 16 8 CPU Normal DVP32ES200R DVP32ES200R ... OCR Scan
datasheet

27 pages,
8438.78 Kb

DVP08XN211R DVP-20EX DVP40es DVP08XM211N DVP16ES200T DVP60ES2 DVP-32ES DVP40ES200R DVP32ES200R DVP24ES200R DVP40ES200T DVP16ES200R Y2P TRANSISTOR DVP60ES200R datasheet abstract
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Abstract: 2-phase 2 inputs C243 C244 C245 C246 C247 C248 C249 C250 C251 C252 C253 C254 XO U U/D U/D U U A A , transistor output (channel N); S refers to transistor output (channel P). For exact launch dates of these , : 100-240VAC 100-240VAC Transistor 8 8 DVP24ES200R DVP24ES200R Max. I/O points: 272 Program capacity: 16k steps Relay 16 8 , points of 100kHz; 2 points of 10kHz (Transistor output Transistor 16 8 DVP-ES2 DVP32ES200R DVP32ES200R Relay 16 16 IF* series Standard MPU DVP32ES200T DVP32ES200T Transistor 16 16 •afMr«wmv«d models) COM port: Built-in ... OCR Scan
datasheet

27 pages,
12934.87 Kb

06XA-E2 DVP20EX200T DVP40ES200R transistor c243 DVP32ES2-R DVP16ES2-T DVP40ES200T DVP06XA-E2 DVP04TC-E2 DVP40ES2-T DVP-20EX2 DVP60ES2-R DVP60ES200R delta plc DVP 32ES2 datasheet abstract
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Abstract: high-speed extension module connection port Constant R: Relay T: Transistor SV series K , /down C235 ~ C245 C246 ~ C255 Special register D1000 D1000 ~ D1999 D1999 Type Current 240g Motion , Or Source I/O configuration Output Type Relay 12 Transistor Relay S/S X0 X1 X2 X3 , Y10 C3 Y11 Y12 Y13 Transistor S/S X0 X1 X2 X3 X4 X5 X6 X7 S/S X10 X11 X12 X13 , : Programming". DVP-*-*-*-R LOAD 24V 1. C0 TRANSISTOR OUTPUT LED ERROR indicator ... Original
datasheet

2 pages,
1032.66 Kb

delta PLC communication manual basic plc ladder diagram K216 transistor DVP-28SV11R delta plc D2000 transistor transistor D1207 DVP28SV DVP28SV11T delta plc DVP28SV11R DELTA DVP28SV11R DVP28SV com1 M2000 M4095 M2000 abstract
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Abstract: PD - 9.773 IRGBF30F IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C · Switching-loss rating includes all "tail" losses · Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) 3.7V G @VGE = 15V, IC = 11A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher , Fig. 2 - Typical Output Characteristics C-245 IRGBF30F IRGBF30F 5.0 V G E = 15 V V C E , C o llec ... Original
datasheet

7 pages,
106.5 Kb

IRGBF30F D-12 C-248 C-247 transistor c243 C 245 B transistor c246 IRGBF30F abstract
datasheet frame
Abstract: Previous Datasheet Index Next Data Sheet PD - 9.773 IRGBF30F IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C · Switching-loss rating includes all "tail" losses · Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) 3.7V G @VGE = 15V, IC = 11A E n-channel Description Insulated Gate , Fig. 2 - Typical Output Characteristics C-245 To Order Previous Datasheet Index Next ... Original
datasheet

6 pages,
216.59 Kb

IRGBF30F D-12 C-248 C-247 transistor c243 transistor c246 datasheet abstract
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Abstract: . 6-3 Transistor Output Example. 6-4 Japanese Model Transistor Output , 16 16 24 Relay Transistor Relay Transistor Relay Transistor 90 (3.5) 75 (3.0) 0.45 (0.99) 0.65 (1.44) 0.80 (1.77) 90 (3.6) Transistor Relay 0.45 (0.99) 12V DC , Transistor (Source) 16 Relay 16 Relay FX0N-40ET-DSS FX0N-40ET-DSS 24 FX0N-40ER-DS FX0N-40ER-DS 24 ... Original
datasheet

94 pages,
952.42 Kb

FX1N 232-BD mitsubishi rs232 cable fx1n fx2n 8eyt ess FX2N-2DA FX1N-24MR-DS FX1N-40MR-DS mitsubishi Fx 40mr cable mitsubishi plc FX1s wiring diagrams FX-232AW JY992D88101 FX1N-40MT-DSS mitsubishi plc fx1n 14mr mitsubishi plc fx series cable rs232 datasheet abstract
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Abstract: charge pump output PHSOUT programming XO transistor base XO divide 3/1, power down SM1=0, 50% duty cycle , L280 NL C263 .01uF C281 .010uF R260 51 R284 NL 14 C269 33pF R266 560 C245 .010uF C265 NL , R304 4.7K C402 7pF PHASE OUT C242 100pF C245 .010uF C280 1000pF DATA CLKSET CLOCK STROBE ... Original
datasheet

23 pages,
227.24 Kb

smd transistor device marking p18 transistor c245 transistor c246 L372 SA900 SA900 abstract
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Abstract: output PHSOUT programming XO transistor base XO divide 3/1, power down SM1=0, 50% duty cycle ÷3, X=1 , SA900BE SA900BE C314 100pF C313 100pF C245 .010uF 2 1 JP3 JMP JP2 JMP JP1 JMP P1-10 P1-10 , DUALTX GND Vcc AMPSTX GND Vcc GND Vcc Vcc GND Q1 C305 100pF TXENABLE 1 1 C245 ... Original
datasheet

20 pages,
173.45 Kb

c243 C246 c306 TRANSISTOR IS-136 L372 SA7025 SA900 SA900BE c371 transistor transistor c243 transistor c245 transistor c246 SA900 abstract
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Abstract: with jumper J11 for OUTA1). The attenuation provided by the output mute transistor (Q2 for OUTA1) is , for a given transistor. The trade off is that a high output impedance is not usually desirable, and , that affects the transistor mute level also affects the HPF formed with the output DC-block capacitor , C85 C115 C186 C191 C237 C238 C51 C97 C111 C152 C182 C202 C220 C245 C26 J22 U28 C156 J17 , SUPPRESSOR, 24V TRANSIENT SUPPRESSOR, 6.8V TRANSISTOR, NPN, EPITAXIAL TYPE, SC59 TRANSISTOR, PNP SILICON ... Original
datasheet

38 pages,
2217.59 Kb

2068E C185 TRANSISTOR R199 opto transistor digital C103 transisTOR C124 CS8406 EMP7160S NP-CAP-0805 transistor c114 digital R55 SOT23 transistor c114 diagrams transistor c243 CRCW0805822J CDB42528 CS42528/26 CDB42528 abstract
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