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Part : TRANSISTOR KIT Supplier : Jameco Manufacturer : Jameco Electronics Stock : 20 Best Price : $59.95 Price Each : $69.95
Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 148 Best Price : $1.26 Price Each : $1.32
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transistor buz71a

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: PowerMOS transistor _ N AMER PHILIPS/DISCRETE OLE D BUZ71A â  hhS3131 D D ,   PowerMOS transistor '*'A BUZ71A r T -3 9 -1 1 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb = , PHILIPS/DISCRETE ObE D bbS3T31 0 0 1 4 4 1 2 S PowerMOS transistor BUZ71A T-39-11 0 , D â  PowerMOS transistor bbSBTBl 0 0 1 4 4 1 4 1 â  â' BUZ71A T-39-11 100 PnwftrMOS transistor _ N AMER PHILIPS/DISCRETE â¡ bE D BUZ71A bb53T31 DDmms â¡ r -
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S3131 S3T31 53T31
Abstract: PowerMOS transistor _ BUZ71A N AMER PHILIPS/DISCRETE OLE D â  bbS3T31 OGlMMCn 5 â  T-97-II May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic , /DISCRETE ObE D â  bb53131 0014411 3 PowerMOS transistor BUZ71A REVERSE DIODE RATINGS AND CHARACTERISTICS , PowerMOS transistor " ObE D â  bbSB^l 0014412 s " BUZ71A T-39-11 w 60 PD 50 40 30 20 10 0 , transistor ObE D â  bbSBTBli 0014414 T ~ BUZ71A T-39-11 10' nF S 10° 5 10"1 5 10'5 -
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T0220AB BUZ71 7ZSS872 T0220
Abstract: Carrier Device BUZ71A N -Channel Enhancem ent-M ode Power Field-Effect Transistor Package T0-220AB TO P VIEW DRAIN (FLANGE) u o >SOURCE >DRAIN >GATE Description The BUZ71A is an n-channel enhancement-mode sllicon-gate power field-effect transistor designed for applications such as , integrated circuits. The BUZ71A is supplied in the JEDEC TO-22QAB plastic package. Terminal Diagram , BUZ71A Drain-Source Voltage. Drain-Gate Voltage (Rg S = 20kH -
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Abstract: SGS-THOMSON ^ 7 #TM M Ê IS M IL II© ? » *! {Z T TYPE BUZ71A BUZ71A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR VD S S 50 V ^D S (on) 0.12 fi 'd 13 A · ULTRA FAST SWITCHING · , · MOTORS CONTROL · INVERTERS N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switch ing times make this POWER MOS transistor ideal for high speed switching , Ti J u n e 198 8 1/4 229 BUZ71A THERMAL DATA Rlhj . case Thermal resistance -
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din IEC 68-1
Abstract: BUZ71A S em iconductor Data Sheet June 1999 File Number 2419.2 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor , Information PART NUMBER BUZ71A PACKAGE TO-22QAB BRAND BUZ71A · Related Literature - TB334 "Guidelines for , orporation 1999 BUZ71A Absolute Maximum Ratings Tc = 25°c, Unless Otherwise Specified , . IDM .VGS BUZ71A 50 50 13 48 ±20 40 100 0.32 -55 to 150 E 55 -
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TA9770 1-800-4-H
Abstract: * 7 # , Riflô(g^®i[Li©TrmQ(gs Æ 7 SGS-THOMSON BUZ71A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ71A V DSS ^DS(on) 50 V 0.12 fi Id 13 A · ULTRA FAST SWITCHING , ACTUATORS · MOTORS CONTROL · INVERTERS N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switch ing times make this POWER MOS transistor ideal for high speed switching , iC T K 'S if f ii 230 BUZ71A ELECTRICAL CHARACTERISTICS (Continued) Parameters Test -
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Z71A
Abstract: , One, TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 BUZ71 BUZ71A Power Field Effect Transistor N-Channel Enhancement-Mode , Gale-Source Voltaga BUZ71A SO VDSS VDGR Drain-Source Voltage Watts VWC -55 to 150 TJ , Transfer Capacitance Total Gate Charge Vdc VDS(on) BUZ71 BUZ71A Forward Transconductance (VDS - 25V, ID = 6 A) Output Capacitance Ohm 'DSIonl BUZ71 BUZ71A Crs, (VDS â'¢ 40 v New Jersey Semiconductor
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Abstract: BUZ71A Data Sheet June 1999 File Number 2419.2 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET , (BUZ71 field effect transistor designed for applications such as · SOA is Power Dissipation Limited A , Mount PART NUMBER PACKAGE BRAND Power Components to PC Boards" BUZ71A TO-220AB BUZ71A MOSNOTE: When , BUZ71A Rev. A BUZ71A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ71A 50 50 13 , . (See Figures 14 and 15). ©2001 Fairchild Semiconductor Corporation BUZ71A Rev. A SYMBOL ISD ISDM Fairchild Semiconductor
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220AB
Abstract: M OTOROLA SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor N-Channel , fo r Fa st S w itc h in g S p e e d s BUZ71 BUZ71A TMOS POWER FETs 12 AMPERES RDS(on) = 0.10 and , perating and Storage Tem perature Range Symbol vdss BUZ71 50 50 ± 20 12 48 40 0.32 BUZ71A Unit , 20 Vdc, V q $ = 0) 'g s s f 'g s s r - - sr Motorola TM O S Power M OSFET Transistor , VGS(th) 2.1 3.1 4 Vdc Symbol M in Typ M ax Unit (Vos = V GS- 'D = 10 m A > RDS(on) BUZ71 BUZ71A -
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552 transistor motorola 552 MOSFET TRANSISTOR motorola
Abstract: BUZ71A Data Sheet December 2001 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features · 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed , Information PART NUMBER BUZ71A PACKAGE TO-220AB · Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" BRAND BUZ71A NOTE: When ordering, use the entire , ) ©2001 Fairchild Semiconductor Corporation BUZ71A Rev. B BUZ71A TC = 25oC, Unless Otherwise Fairchild Semiconductor
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Abstract: in t e is il Data Sheet June 1999 BUZ71A File Num ber 2419.2 13A, 50V, 0.120 Ohm, N -Channel Power M O SFET This is an N-Channel enhancem ent mode silicon gate power field effect transistor , Ordering Information PART NUMBER BUZ71A PACKAGE TO-220AB BRAND BUZ71A · Related Literature - TB 334 , 321 -7 2 4 -7 1 4 3 I Copyright © Intersil Corporation 2000. N-CHANNEL STANDARD GATE BUZ71A Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified BUZ71A 50 50 13 48 ±20 40 100 0.32 -55 to -
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0120S 120S2
Abstract: silicon gate power field effect transistor designed for applications such as switching regulators , . Formerly developmental type TA9770. Ordering Information PART NUMBER PACKAGE BRAND BUZ71A TO-220AB BUZ71A NOTE: When ordering, use the entire part number. BUZ71A June 1999 File Number 2419.2 Features , Material Copyrighted By Its Respective Manufacturer BUZ71A Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified BUZ71A UNITS Drain to Source Breakdown Voltage (Note 1 -
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cip soa rl 1-800-4-HARRIS
Abstract: BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for , Ordering Information PART NUMBER BUZ71A PACKAGE TO-220AB · Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" BRAND BUZ71A NOTE: When ordering, use the , BUZ71A TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown Intersil
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ISO9000
Abstract: BUZ71A Semiconductor Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET October 1998 , gate power · rDS(ON) = 0.120 (BUZ71 field effect transistor designed for applications such as · SOA , PC Boards" BUZ71A TO-220AB BUZ71A MOSNOTE: When ordering, use the entire part number. FET , IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ71A TC = 25oC , Tpkg BUZ71A 50 50 13 48 ±20 40 100 0.32 -55 to 150 E 55/150/56 UNITS V V A A V W Harris Semiconductor
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TO 220AB Mosfet
Abstract: Power Field-Effect Transistor. N-Channel Enhancement-Mode Power MOS Field-Effect Transistor. N-Channel Enhancement-Mode Power MOS Field-Effect Transistor. N-Channel Enhancement-Mode Power Field-Effect Transistor. N-Channel Enhancement-Mode Power MOS Field-Effect Transistor. N-Channel Enhancement-Mode Power MOS Field-Effect Transistor. N-Channel Enhancement-Mode Power MOS Field-Effect Transistor -
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4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor h a 431 transistor 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760
Abstract: BCY71 BUZ71A BUZ71A BUZ72A BUZ74 BYW80-200 BAT85 BFX85 BFX88 ZTX790A MPSA92 BDW93C BDW94C TIS97 BYW98 , supplies, high frequency DC-DC converters and transistor circuits. These devices feature very low Rapid Electronics Catalog
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2SA1085E 2SC2547E BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V DO-15 DO-201AD T0202-3 1N914 1N4001 1N4002
Abstract: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154 1850-0156 1850-0170 1850-0172 , VN0104N3 BUZ71A IRF512 VP0300L (SEL) IRFD420 BUZ10 J304 (SEL) VN0300L VN2222L SD306 (SEL) VN10LE IRF510 IRF250 MTP12N20 RFP10N12 IRFD9123 BUZ71A NE71000 2SK523 2SK533 IRF523 U440 J175 2N6660 -
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cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 LM103-2 CA3026 CA3018 MPQ6842 CA3046 CA3045
Abstract: small, low-cost inductor. An additional MOSFET or bipolar transistor is needed for high-power , power 1 MOSFET or bipolar transistor EXT swings from GND to VOUT and has approximately 100U sink/source , MOSFET or bipolar transistor, the MAX641 series will also work well in low-power applications ( , worst-case high conditions for power-switch transistor on time and high input voltage. VlN Fixed Output 10W , currents do not stress the transistor or cause the inductor core to saturate. Odd symptoms can be traced to -
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IRL734 IRF540 how to stepup 1.5v to 5v, 12v Step-Up Voltage Regulator in TO-220 MAX642XCSA MAX642XCPA MAX641/MAX642/MAX643 MAX641/642/643 IAX641XCPA MAX64 MAX641XC/D MAX681
Abstract: , low-cost inductor. An additional MOSFET or bipolar transistor is needed for high-power applications. Low , EXT The drive output for an external power MOSFET or bipolar transistor EXT swings from GND to VOUT , transistor, the MAX641 series will also work well in tow-power applications ( , under worst-case high conditions for power-switch transistor on time and high input voltage. VlN h , transistor or cause the inductor core to saturate. Odd symptoms can be traced to excessive inductor currents -
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MAX642 MAX641XCPA JRF620 mosfet irf640 dc to dc converter Caddell-Burns IRZ14 BUZ71A equivalent MAX643 MAX638 ICL7660
Abstract: transistor is needed for high-power applications. Low battery detection c irc u itry is included on chip. The , transistor EXT swings from GND to VOUT and has approxim ately 100£i sink/source im pedance. EXT is low when , than the desired output level. Though designed to power an external MOSFET or bipo lar transistor, the , avoided under worst-case high conditions for power-switch transistor on time and high input voltage. In , transistor or cause the inductor core to saturate. Odd symptoms can be traced to excessive inductor currents -
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1RF620 Diode c 642 AX641XCPA MAX641XCSA MAX641XEPA MAX641XESA MAX641XEJA MAX641XMJA
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