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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

transistor buz71a

Catalog Datasheet MFG & Type PDF Document Tags

buz71a

Abstract: PowerMOS transistor _ N AMER PHILIPS/DISCRETE OLE D BUZ71A â  hhS3131 D D ,   PowerMOS transistor '*'A BUZ71A r T -3 9 -1 1 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb = , PHILIPS/DISCRETE ObE D bbS3T31 0 0 1 4 4 1 2 S PowerMOS transistor BUZ71A T-39-11 0 , D â  PowerMOS transistor bbSBTBl 0 0 1 4 4 1 4 1 â  â' BUZ71A T-39-11 100 PnwftrMOS transistor _ N AMER PHILIPS/DISCRETE â¡ bE D BUZ71A bb53T31 DDmms â¡ r
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S3131 S3T31 53T31

transistor buz71a

Abstract: BUZ71 PowerMOS transistor _ BUZ71A N AMER PHILIPS/DISCRETE OLE D â  bbS3T31 OGlMMCn 5 â  T-97-II May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic , /DISCRETE ObE D â  bb53131 0014411 3 PowerMOS transistor BUZ71A REVERSE DIODE RATINGS AND CHARACTERISTICS , PowerMOS transistor " ObE D â  bbSB^l 0014412 s " BUZ71A T-39-11 w 60 PD 50 40 30 20 10 0 , transistor ObE D â  bbSBTBli 0014414 T ~ BUZ71A T-39-11 10' nF S 10° 5 10"1 5 10'5
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T0220AB transistor buz71a BUZ71 7ZSS872 T0220

BUZ71

Abstract: BUZ71A Carrier Device BUZ71A N -Channel Enhancem ent-M ode Power Field-Effect Transistor Package T0-220AB TO P VIEW DRAIN (FLANGE) u o >SOURCE >DRAIN >GATE Description The BUZ71A is an n-channel enhancement-mode sllicon-gate power field-effect transistor designed for applications such as , integrated circuits. The BUZ71A is supplied in the JEDEC TO-22QAB plastic package. Terminal Diagram , BUZ71A Drain-Source Voltage. Drain-Gate Voltage (Rg S = 20kH
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transistor buz71a

Abstract: din IEC 68-1 SGS-THOMSON ^ 7 #TM M Ê IS M IL II© ? » *! {Z T TYPE BUZ71A BUZ71A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR VD S S 50 V ^D S (on) 0.12 fi 'd 13 A · ULTRA FAST SWITCHING · , · MOTORS CONTROL · INVERTERS N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switch ing times make this POWER MOS transistor ideal for high speed switching , Ti J u n e 198 8 1/4 229 BUZ71A THERMAL DATA Rlhj . case Thermal resistance
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din IEC 68-1
Abstract: BUZ71A S em iconductor Data Sheet June 1999 File Number 2419.2 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor , Information PART NUMBER BUZ71A PACKAGE TO-22QAB BRAND BUZ71A · Related Literature - TB334 "Guidelines for , orporation 1999 BUZ71A Absolute Maximum Ratings Tc = 25°c, Unless Otherwise Specified , . IDM .VGS BUZ71A 50 50 13 48 ±20 40 100 0.32 -55 to 150 E 55 -
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TA9770 1-800-4-H

Z71A

Abstract: * 7 # , Riflô(g^®i[Li©TrmQ(gs Æ 7 SGS-THOMSON BUZ71A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ71A V DSS ^DS(on) 50 V 0.12 fi Id 13 A · ULTRA FAST SWITCHING , ACTUATORS · MOTORS CONTROL · INVERTERS N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switch ing times make this POWER MOS transistor ideal for high speed switching , iC T K 'S if f ii 230 BUZ71A ELECTRICAL CHARACTERISTICS (Continued) Parameters Test
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Z71A
Abstract: , One, TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 BUZ71 BUZ71A Power Field Effect Transistor N-Channel Enhancement-Mode , Gale-Source Voltaga BUZ71A SO VDSS VDGR Drain-Source Voltage Watts VWC -55 to 150 TJ , Transfer Capacitance Total Gate Charge Vdc VDS(on) BUZ71 BUZ71A Forward Transconductance (VDS - 25V, ID = 6 A) Output Capacitance Ohm 'DSIonl BUZ71 BUZ71A Crs, (VDS â'¢ 40 v New Jersey Semiconductor
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Abstract: BUZ71A Data Sheet June 1999 File Number 2419.2 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET , (BUZ71 field effect transistor designed for applications such as · SOA is Power Dissipation Limited A , Mount PART NUMBER PACKAGE BRAND Power Components to PC Boards" BUZ71A TO-220AB BUZ71A MOSNOTE: When , BUZ71A Rev. A BUZ71A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ71A 50 50 13 , . (See Figures 14 and 15). ©2001 Fairchild Semiconductor Corporation BUZ71A Rev. A SYMBOL ISD ISDM Fairchild Semiconductor
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220AB

552 MOSFET TRANSISTOR motorola

Abstract: 552 transistor motorola M OTOROLA SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor N-Channel , fo r Fa st S w itc h in g S p e e d s BUZ71 BUZ71A TMOS POWER FETs 12 AMPERES RDS(on) = 0.10 and , perating and Storage Tem perature Range Symbol vdss BUZ71 50 50 ± 20 12 48 40 0.32 BUZ71A Unit , 20 Vdc, V q $ = 0) 'g s s f 'g s s r - - sr Motorola TM O S Power M OSFET Transistor , VGS(th) 2.1 3.1 4 Vdc Symbol M in Typ M ax Unit (Vos = V GS- 'D = 10 m A > RDS(on) BUZ71 BUZ71A
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552 MOSFET TRANSISTOR motorola 552 transistor motorola

BUZ71A

Abstract: TB334 BUZ71A Data Sheet December 2001 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features · 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed , Information PART NUMBER BUZ71A PACKAGE TO-220AB · Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" BRAND BUZ71A NOTE: When ordering, use the entire , ) ©2001 Fairchild Semiconductor Corporation BUZ71A Rev. B BUZ71A TC = 25oC, Unless Otherwise
Fairchild Semiconductor
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BUZ71A

Abstract: 0120S in t e is il Data Sheet June 1999 BUZ71A File Num ber 2419.2 13A, 50V, 0.120 Ohm, N -Channel Power M O SFET This is an N-Channel enhancem ent mode silicon gate power field effect transistor , Ordering Information PART NUMBER BUZ71A PACKAGE TO-220AB BRAND BUZ71A · Related Literature - TB 334 , 321 -7 2 4 -7 1 4 3 I Copyright © Intersil Corporation 2000. N-CHANNEL STANDARD GATE BUZ71A Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified BUZ71A 50 50 13 48 ±20 40 100 0.32 -55 to
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0120S 120S2

ta9770

Abstract: BUZ71A silicon gate power field effect transistor designed for applications such as switching regulators , . Formerly developmental type TA9770. Ordering Information PART NUMBER PACKAGE BRAND BUZ71A TO-220AB BUZ71A NOTE: When ordering, use the entire part number. BUZ71A June 1999 File Number 2419.2 Features , Material Copyrighted By Its Respective Manufacturer BUZ71A Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified BUZ71A UNITS Drain to Source Breakdown Voltage (Note 1
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cip soa rl 1-800-4-HARRIS

BUZ71A

Abstract: TB334 BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for , Ordering Information PART NUMBER BUZ71A PACKAGE TO-220AB · Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" BRAND BUZ71A NOTE: When ordering, use the , BUZ71A TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown
Intersil
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ISO9000

TA9770

Abstract: transistor buz71a BUZ71A Semiconductor Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET October 1998 , gate power · rDS(ON) = 0.120 (BUZ71 field effect transistor designed for applications such as · SOA , PC Boards" BUZ71A TO-220AB BUZ71A MOSNOTE: When ordering, use the entire part number. FET , IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ71A TC = 25oC , Tpkg BUZ71A 50 50 13 48 ±20 40 100 0.32 -55 to 150 E 55/150/56 UNITS V V A A V W
Harris Semiconductor
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TO 220AB Mosfet

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR Power Field-Effect Transistor. N-Channel Enhancement-Mode Power MOS Field-Effect Transistor. N-Channel Enhancement-Mode Power MOS Field-Effect Transistor. N-Channel Enhancement-Mode Power Field-Effect Transistor. N-Channel Enhancement-Mode Power MOS Field-Effect Transistor. N-Channel Enhancement-Mode Power MOS Field-Effect Transistor. N-Channel Enhancement-Mode Power MOS Field-Effect Transistor
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4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760

BZX85C12V

Abstract: bta41-600b application BCY71 BUZ71A BUZ71A BUZ72A BUZ74 BYW80-200 BAT85 BFX85 BFX88 ZTX790A MPSA92 BDW93C BDW94C TIS97 BYW98 , supplies, high frequency DC-DC converters and transistor circuits. These devices feature very low
Rapid Electronics Catalog
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2SA1085E 2SC2547E BZX85C12V bta41-600b application TOSHIBA 2N3055 BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V DO-15 DO-201AD T0202-3 1N914 1N4001 1N4002

cp4071

Abstract: data sheet IC 7408 Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154 1850-0156 1850-0170 1850-0172 , VN0104N3 BUZ71A IRF512 VP0300L (SEL) IRFD420 BUZ10 J304 (SEL) VN0300L VN2222L SD306 (SEL) VN10LE IRF510 IRF250 MTP12N20 RFP10N12 IRFD9123 BUZ71A NE71000 2SK523 2SK533 IRF523 U440 J175 2N6660
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cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 LM103-2 CA3026 CA3018 MPQ6842 CA3046 CA3045

IRL734

Abstract: IRF540 small, low-cost inductor. An additional MOSFET or bipolar transistor is needed for high-power , power 1 MOSFET or bipolar transistor EXT swings from GND to VOUT and has approximately 100U sink/source , MOSFET or bipolar transistor, the MAX641 series will also work well in low-power applications ( , worst-case high conditions for power-switch transistor on time and high input voltage. VlN Fixed Output 10W , currents do not stress the transistor or cause the inductor core to saturate. Odd symptoms can be traced to
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IRL734 IRF540 transistor irf620 how to stepup 1.5v to 5v, 12v Step-Up Voltage Regulator in TO-220 IRF540 n-channel MOSFET DC TO DC CONVERTER MAX641/MAX642/MAX643 MAX641/642/643 IAX641XCPA MAX64 MAX641XC/D MAX681

JRF620

Abstract: irl734 , low-cost inductor. An additional MOSFET or bipolar transistor is needed for high-power applications. Low , EXT The drive output for an external power MOSFET or bipolar transistor EXT swings from GND to VOUT , transistor, the MAX641 series will also work well in tow-power applications ( , under worst-case high conditions for power-switch transistor on time and high input voltage. VlN h , transistor or cause the inductor core to saturate. Odd symptoms can be traced to excessive inductor currents
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MAX642 MAX643 MAX641XCPA JRF620 mosfet irf640 dc to dc converter Caddell-Burns IRZ14 BUZ71A equivalent MAX638 ICL7660

IRL734

Abstract: 1RF620 transistor is needed for high-power applications. Low battery detection c irc u itry is included on chip. The , transistor EXT swings from GND to VOUT and has approxim ately 100£i sink/source im pedance. EXT is low when , than the desired output level. Though designed to power an external MOSFET or bipo lar transistor, the , avoided under worst-case high conditions for power-switch transistor on time and high input voltage. In , transistor or cause the inductor core to saturate. Odd symptoms can be traced to excessive inductor currents
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1RF620 Diode c 642 AX641XCPA MAX641XCSA MAX641XEPA MAX641XESA MAX641XEJA MAX641XMJA
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