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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil

transistor bc107b

Catalog Datasheet MFG & Type PDF Document Tags

Zener Diode 3v 400mW

Abstract: transistor bc548b RF Wideband Transistor Selection Guide 791-180 UMA1021M Low-Voltage Frequency Synthesizer for , drive circuit would allow a lower voltage transistor, Q1, and capacitor, Cd, to be used. Base-emitter , Typical Application: 15 RF Wideband Transistor Selection Guide 16 RF Wideband Transistor
Philips Semiconductors
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Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF

bc108b

Abstract: bc109c BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m , =0.5mA IC=100mA, IB=5.0mA VCE=5.0V, IC=2.0mA 0.55 VCE=5.0V, IC=10mA VCE=5.0V, IC=10A (BC107B, BC108B, BC109B , ) 110 VCE=5.0V, IC=2.0mA (BC107B, BC108B, BC109B) 200 VCE=5.0V, IC=2.0mA (BC108C, BC109C) 420 TYP , 450 220 450 800 R1 (16-August 2012) BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR , =2.0mA, f=1.0kHz (BC107B, BC108B, BC109B) 240 hfe VCE=5.0V, IC=2.0mA, f=1.0kHz (BC108C) hfe VCE=5.0V, IC
Central Semiconductor
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BC108 Transistor BC107 NPN BC108B transistor transistor bc107b for transistor bc107 bc109 Transistor BC107 BC109 BC107A 100MH

TRANSISTOR bc107 current gain

Abstract: bc107a amplification. DESCRIPTION NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177. PINNING PIN 1 , junction to case CONDITIONS note 1 VALUE 0.5 0.2 UNIT K/mW K/mW Note 1. Transistor mounted on , current DC current gain BC107A; BC108A BC107B; BC108B; BC109B BC108C; BC109C DC current gain BC107A; BC108A BC107B; BC108B; BC109B BC108C; BC109C CONDITIONS Ie = 0; VCB = 20 V lE = 0; VCB = 20 V; T j = , frequency noise figure BC109B; BC109C noise figure BC107A; BC108A BC107B; BC108B; BC108C BC109B; BC109C lc
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TRANSISTOR bc107 current gain BC109c transistor transistor TO-92 bc108 bc107 applications BC108-BC109 BC108B transistor specification

Transistor BC109

Abstract: 8C109 Datasheet 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 â'¢ Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors BC107,A,B BC108,A,B,C BC109,B,C NPN SILICON TRANSISTOR , =100mA, Ig=5.0mA VCE=5.0V, lc=2.0mA VCE=5.0V, ic=1oya (BC107.A, BC108,A) VCE=5.0V, IC=1OyA (BC107B, BC108B , =5.0V, lc=2.0mA (BC107A, BC108A) Vce=5.0V, Iq=2.0mA (BC107B, BC108B, BC109B) VCE=5.0V, lc=2.0mA (BC108) VCE , =5.0V, Ic=2.0mA, f = 1 .0kHz (BC107A, BC108A) 190 hfe VCE=5.0V, Iq-2.0mA, f = l .OkHz (BC107B, BC108B
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8C109 applications of Transistor BC108 BC108 transistor BC109C datasheet DATASHEET Transistor BC109 symbol transistor BC108

TRANSISTOR bc108

Abstract: BC107 Transistor application notes NPN transistor in a TO-18; SOT18 metal package. PNP complements: BC177, BC178 and BC179. 2 3 , Rth j-c CONDITIONS thermal resistance from junction to case note 1 UNIT 1. Transistor , ; Tj = 150 °C - - 15 µA - - 50 nA BC107A; BC108A - 90 - BC107B; BC108B; BC109B 40 150 - 100 270 - BC107A; BC108A 110 180 220 BC107B , noise figure BC107A; BC108A BC107B; BC108B; BC108C BC109B; BC109C Notes 1. VBEsat decreases by
Philips Semiconductors
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BC107 Transistor application notes transistor BC107 specifications bc108b equivalent BC108B application note DATASHEET Transistor BC107 TRANSISTOR DATASHEET BC107B M3D125 MAM264 SCA54

transistor BC107 specifications

Abstract: BC107 Transistor application notes 2 NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177. 2 3 MAM264 , CONDITIONS thermal resistance from junction to case Note 1. Transistor mounted on an FR4 , µA IC = 0; VEB = 5 V - - 50 nA BC107A; BC108A - 90 - BC107B; BC108B , BC107B; BC108B; BC109B 200 290 450 ICBO collector cut-off current IEBO emitter , figure BC107A; BC108A BC107B; BC108B; BC108C BC109B; BC109C Notes 1. VBEsat decreases by about 1.7
Philips Semiconductors
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BC107 equivalent transistors BC108 operation BC107 DATASHEET EQUIVALENT TRANSISTOR bc108 BC109B equivalent SCA55

TRANSISTOR BC147

Abstract: BC148 transistor T018 300mW 300mc121 + 50 125-500 2mA Audio driver and TV 0.10* BC107B S/NPN T018 300mW 300mct2> +50 , T018 300mW 300mc
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ASZ21 BC118 BC147 BC148 BCZ11 TRANSISTOR BC147 BC148 transistor TRANSISTOR BC149 npn transistor bc148 BC158 transistor transistor BC118 ASZ20 BC113 BC117 BC134

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE STZTA92 MMBTA42 MMBTA92 (1) Different PIN OUT (2) Similar Package (3) Medium Power Transistor For , Driver For LED High gain transistor used to drive 100mA relay. High gain transistor used to drive 20mA LED. Due to the high gain characteristic the transistor will switch on with just IB=300µA. Due to the high gain characteristic the transistor will switch on with just IB=100µA. ST Nearest , ) Medium Power Transistor 1 6 Industry Standard 2N3904 2N3906 2N4401 2N4403 2PB709AR 2PD601
STMicroelectronics
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MMBT3094 transistor 2N3906 smd 2A SOT23 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BF722 BF723 BFN38 CZTA42 CZTA92 KSA539

EQUIVALENT TRANSISTOR bc109c

Abstract: TRANSISTOR pnp BC140 TO-18 BC107B 2N930 NPN TO-18 BC108 2N2484 NPN TO-18 BC108A 2N930 NPN TO-18 BC108B 2N930 NPN TO , -18 BFX29 2 N 2904A . ?NP TO-39 3-16 EgAVTHEONj Discrete Devices Beam Lead Chips Transistor Chips
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2N328A 2N1025 2N1026 2N2280 EQUIVALENT TRANSISTOR bc109c TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N327A 2N327B 2N328B 2N329A 2N329B

KT 819 transistor

Abstract: 2N2222A 338 SS108D KCZ5Ö.2 Tr« im Aluquader t i f e r t e je Transistor . BC107B,SC237Es F< 5dB SC239E ; BC109C , SF129D,BC211-16,KT630B 2,4,5 BC107B, F < 1 OdB 5 BC109C, F OOdB 5 BC109C, F< 4dB 5 BC109C, F < 4dB 5 , -16, BD140 f BC313-16, BD140 BC313-16, BD140 BC107B 5 5 5 5 5 21 21 21 50 20 20 20 45 20 20 20 , 130 3 F< 4dB F , »4, 6, 3 BC107B BC107B BD140, BC313-16, KFY18 KT3107I , * F
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KT 819 transistor 2N2222A 338 SF137D SSY20B KT819W SF127E 400MH

EQUIVALENT TRANSISTOR bc109c

Abstract: equivalent transistor 2N1711 TO-18 BC107B 2N930 NPN TO-18 BC108 2N2484 NPN TO-18 BC108A 2N930 NPN TO-18 BC108B 2N930 NPN TO , Dual-in-line Quad TO-86 Flat Pack 3-17 Discrete Devices Beam Lead Chips Transistor Chips 100% Probed
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equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list Transistor BC107b motorola transistor bc107b equivalent TO-89 2N760 2N760A 2N929 2N929A 2N930A 2N930B

MMBD2103

Abstract: ZENER DIODE t2d example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , digital transistor (see codebook introduction) enhancement (mode - FETs) field effect transistor transition frequency Gallium Arsenide field effect transistor gate ground general purpose small signal , transistor maximum available gain maximum minimum microwave minature integrated circuit modular amplifier - an mmic amplifier metal oxide insulated gate fet n-channel fet (any type) npn bipolar transistor
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MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2104 MMBD2102 SMD codes BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45

SMD Codes

Abstract: TRANSISTOR SMD T1P example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , dual gate digital transistor (see codebook introduction) enhancement (mode - FETs) field effect transistor transition frequency Gallium Arsenide field effect transistor gate ground general purpose small , effect transistor maximum available gain maximum min mmic modamp mosfet n-ch npn o/p p-ch pin pkg pnp , - an mmic amplifier metal oxide insulated gate fet n-channel fet (any type) npn bipolar transistor
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TRANSISTOR SMD T1P BAW92 schottky diode s6 81A smd transistor A6a a4s smd transistor Transistor SMD a7s BAV105 LL4148 LL4448 BB241 BB249 LL914

BZX85C12V

Abstract: bta41-600b application -200 BR100 BYW100-200 KBPC102 Z0103MA KBPC104 TIC106D BC107 BC107B BS107 Z0107MA BC108 BC108B BC108C J108 , supplies, high frequency DC-DC converters and transistor circuits. These devices feature very low , ) 30 MPSA27 Fair TO-92 (B) 60 MPSA42 Fair TO-92 (B) 300 TIS97 CDIL TO-92 (C) BC107 CDIL TO-18 50 BC107B , +9V OUTPUT Order code MPSA13 MPSA14 MPSA27 MPSA42 TIS97 BC107 BC107B BC108 BC108B BC108C BC109
Rapid Electronics Catalog
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2SA1085E 2SC2547E BZX85C12V bta41-600b application TOSHIBA 2N3055 BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V DO-15 DO-201AD T0202-3 1N914 1N4001 1N4002

BC107BP

Abstract: TRANSISTOR BC107BP reference voltage (1.95 V). The error signal at the output of the LM10 is used to control transistor Q2 , R13 R14 R15 R16 Part Number ICM7555 LM10CN IXTH75N10 2N5550 BC107B 1N4148 BZX85C12
Vicor
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MIL-STD-1275B BC107BP TRANSISTOR BC107BP Rudy Severns TRANSISTOR DATASHEET BC107BP Severns uA555 MIL-STD-461E MIL-STD-1275 V24A28C400A ED-31

MMBD2104

Abstract: Transistor NEC 05F transistor with a Vc e (max) of 20V, maximum collector current of 100mA and a maximum total power dissipation
SMD Code Book
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Transistor NEC 05F hp2835 diode what is the equivalent of ZTX 458 transistor T2D DIODE 3w NDS358N mmbf4932 LL4150 BB219 LL300 BA682 BA683 BA423L

sx3704

Abstract: BRC157 transistors by the engineer when replacing a transistor in its heatsink during servicing. INTRODUCTION , egulator 1.3 V , D45 ARLC D iode U14735 . Base D (S ilicon transistor strapped b-c , . ITT BC107B iTT ITT183B VT304 M ullard BF194 VT305 ITT B C 1 0 7 B . VT306 Texas BC183LB . . ITT BC107B ITT ITT183B Base Base Base Base Base Base
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sx3704 BRC157 Germanium Diode aa143 BRC-116 1n4148 ITT c1129 transistors VT701 R2540 VT702 1N4005 BZX83-C30 BZX79-C30

TRANSISTOR BC 448 smd

Abstract: transistor MPSA77 transistors Transistor arrays Medium-power transistors Power transistors Resistor-equipped transistors & arrays Transistors Transistor arrays Switching transistors Low-power transistors Medium-power transistors , 2PC1815GR 2PC1815Y BC107 BC107A BC107B BC108 BC108A BC108B BC108C BC109 BC109B BC109C BC237 BC237B BC337 , 2PC1815GR 2PC1815Y BC107 BC107A BC107B BC237 BC237B BC337 BC337A BC337-16 BC337-25 BC337-40 BC338 BC338 , LEADED DEVICES (continued) NPN GENERAL PURPOSE TRANSISTOR ARRAYS TYPE NUMBER BCY87 BCY88 BCY89 VCEO max
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2PC945K 2PC945Q TRANSISTOR BC 448 smd transistor MPSA77 JA101P transistor pn2222 BC853B smd transistor npn 491 2N4124 2N5088 2PC945 2PC945P

993 395 pnp npn

Abstract: bc237 smd sot23 package Low-power transistors 2 5 ­ 23 26 Transistor arrays 7 ­ 29 29 29 , ­ ­ ­ Power transistors Resistor-equipped transistors & arrays Transistors Transistor , BC107A TO-18 45 100 300 110 220 100 BC177A 222 BC107B TO-18 45 100 , 260 100 BC107A 231 BC177B TO-18 45 100 300 240 500 100 BC107B , GENERAL PURPOSE TRANSISTOR ARRAYS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot
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993 395 pnp npn bc237 smd sot23 package TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD BF622 BF721 BF720 BSP15 BSP19 BSP16
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