NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: , 10V, Y5Y, SMD Semiconductors 4 Diode, BAV99L BAV99L 2 Transistor, bipolar, 2N3904 2N3904, SMD Integrated , supply voltage with regulated lamp current. Rated 12W power output at 12V input Open lamp regulation , Resistors 1 4.3K, ±5%, SMD, 0805 2 1M, ±5%, SMD, 0805 1 140, ±1%, SMD, 0805 1 1K, ±5%, SMD, 0805 1 2M, ±5%, SMD, 0805 1 280K, ±5%, SMD, 0805 Capacitors 2 10nF, 50V, Y5V, SMD 8 2 1 1 1 1 , C_vref Cul 10nF, 16V, X7R, SMD 9 10 11 12 13 14 Vendor / Part # 1uF 6.3V X7R 6.8nF 16V ... | Original |
6 pages, |
CAP SMD X7R 100NF 50V 10 darfon power supply inverter diagram darfon diagram transistor SMD 2n3904 darfon transformers MP1011EMA mosfet 12w smd transistor SMD 12W inverter SMD 12W darfon inverter board 12W SMD MOSFET smd transistor 12W 55 MP1011A MP1011A MP1011A abstract |
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| Abstract: 12W shared to both outputs. One typical application is shown in figure 1 below. Figure 1: Principle application of the HV-Bias circuit 2 Features The 12W HV -BIAS demonstration board shows a , transistor with 1200V to 1500V breakdown capability is necessary. This makes the design expensive and , together with a further 600V or 800V CoolMOSTM transistor. The user of this module is able to supply , CoolMOSTM transistor is achieved. Technical specification: 1) Input Voltage Range: 120 VDC . ... | Original |
14 pages, |
zener diode 15v SMD Code 12W transistor 12w smd SP*02N60 smd transistor code 12w P4KE550 smd transistor 12w SPA02N60-C3 mosfet 12w smd cascode mosfet switching ICE2B265 12W Sot23 UEI18 ICE2B265 abstract |
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| Abstract: power is up to 12W shared to both outputs. One typical application is shown in figure 1 below. Figure 1: Principle application of the HV-Bias circuit 2 Features The 12W HV-BIAS demonstration board , to 800VDC 800VDC a transistor with 1200V to 1500V breakdown capability is necessary. This makes the design , used together with a further 600V or 800V CoolMOSTM transistor. The user of this module is able to , transistor is achieved. Technical specification: Input Voltage Range: 1201) VDC . 800VDC 800VDC Total ... | Original |
15 pages, |
600 V Power MOSFET,infineon ICE2B265 transformer less SMD 12W MOSFET 12W SMD SOT23 mosfet 1500v for smps AN-EvalMF2-ICE2A0565Z-1 12W SMD MOSFET SP*02N60 cascode mosfet switching mosfet 12w smd Finepower smd zener diode code D5 ICE2B265 ICE2B265 abstract |
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| Abstract: , SMD, TFP, 150V, 57A,ROHS FUJI ELECTRIC MJD31CG MJD31CG 1 ea Q3 TRANSISTOR, NPN, 3P , power supply. It can be used in various single transistor topologies including forward and flyback , drain source of the transistor. As the main switch is turned off, a resonance is developed between the , of the transistor is clamped to VIN. VIN*NS/NP V DS V RES VOUT = VIN*D*NS/NP TX +VOUT + , source of the transistor Coss, the winding capacitance of the transformer Ct, and the external ... | Original |
10 pages, |
resonant single ended forward converter coev transformer MGPWT-00140-REVA smd transistor equivalent table ic 7490 data sheet smd 57a transistor SMD 12W 12p smd transistor 12p smd IC 7490 pin configuration ISL6721EVAL3Z SMD transistor 2x sot 23 ISL6721EVAL3Z abstract |
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| Abstract: flyback converter has the following performance and maximum ratings: Output power 12W Output , , Electrolytic Capacitor, Ceramic (SMD) Capacitor, Electrolytic Capacitor, Ceramic Capacitor, Electrolytic Capacitor, Ceramic (SMD) Rectifier bridge, 380VAC 380VAC,0.8A (SMD) Diode (SMD) Ultrafast Diode, 1A, 600V (SMD) Schottky diode (SMD) Connector MOSFET 1A, 600V (SMD) Resistor(SMD) Resistor (SMD) Resistor (SMD) Resistor (SMD) Resistor (SMD) Resistor (SMD) Resistor (SMD) Resistor (SMD) Transformer (see text ... | Original |
12 pages, |
philips 3C85 TL431 application S380 SMD transistor zc SMD 15V ac transformer SMD transformer SMD ic catalogue smd transistor 12w filter stage flyback ic 311 zero crossing transistor SMD 12W MOSFET motorola diode smd transistor SMD 12W AN1594/D AN1594 AN1594/D abstract |
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| Abstract: 6.0 (�V, 8) 8.0 (�V, 8) N 0.15% 40 30 60 TDA2616 TDA2616 2 x 12W HIFI SE 7.5 - 21 12.0 (�V, 8) 15.0 (�V, 8) N 0.15% 40 30 TDA2616Q TDA2616Q 2 x 12W HIFI SE 7.5 - 21 , (P) 2 x 6W SE 8.5 - 18 TDA1517ATW TDA1517ATW mini SMD 2x3W SE/BTL 6.0 - 18 TDA8510J TDA8510J , supply voltages) Save Operating Protection. Protects the safe operating area of a power transistor used , Eff=90%, Rail to rail Speaker Flat (LCD) Micro 12W (4, 22V) 11.8W (8, 29V) 2x16W (4 ... | Original |
6 pages, |
PNX0105 TFA9842J TFA9841J TSSOP32 BTL audio 100w 2x15 TDA8920BTH Tfa9843j UDA1355H PNX0101 TDA8510J 2.1 tea5767 tfa9842aj TDA892*j datasheet abstract |
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| Abstract: SPP07N60C2 SPP07N60C2 SPB07N60C2 SPB07N60C2 Preliminary data Cool MOSTM Power Transistor C OLMOS O Power , - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 , G=12W, - 33 - Turn-off delay time t d(off) T j=125°C - 47 70 Fall time , load, T j=125°C t = f (RG ), inductive load, Tj=125°C par.: V DS=380V, V GS=0/+13V, RG=12W , ), inductive load, Tj =125°C par.: V DS=380V, V GS=0/+13V, RG=12W par.: VDS =380V, VGS =0/+13V,ID=7.3A ... | Original |
12 pages, |
Q67040-S4310 SPP07N60C2 SPB07N60C2 SDP06S60 smd transistor 12W 55 smd transistor 12W 98 smd transistor 12w 07N60C2 transistor SMD 12W TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W SPP07N60C2 abstract |
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| Abstract: SPD07N60C2 SPD07N60C2 SPU07N60C2 SPU07N60C2 Preliminary data Cool MOSTM Power Transistor C OLMOS O Power , , leaded RthJA - - 75 SMD version, device on PCB: RthJA @ min. footprint - - , ID=7.3A, R G=12W, - 33 - Turn-off delay time t d(off) T j=125°C - 47 70 Fall , load, T j=125°C t = f (RG ), inductive load, Tj=125°C par.: V DS=380V, V GS=0/+13V, RG=12W , ), inductive load, Tj =125°C par.: V DS=380V, V GS=0/+13V, RG=12W par.: VDS =380V, VGS =0/+13V,ID=7.3A ... | Original |
12 pages, |
07N60 P-TO252 SDP06S60 smd transistor 12W 55 smd transistor 12W 98 SPD07N60C2 SPU07N60C2 07N60C2 equivalent smd transistor marking 12W TRANSISTOR SMD MARKING CODE 12w transistor SMD 12W 07n60c2 SPD07N60C2 abstract |
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| Abstract: / - 5 - 110 V / 800mW / - 5 - 110 V / 1.2W / - 5 - 110 V / 1.2W / 800 mW sensitive coil 6 , / 1.2VA 12 - 125 / 24 - 240 1.2W / 2VA 6 - 220 / 6 - 230 1.2W / 2.3VA 6 - 220 / 6 - 230 1.2W , / 6 - 400 1.2W / 2.8 VA 6 - 220 / 6 - 400 1.2W / 2.8 VA 6 - 48 / 24 - 240 1.7W / 4.0 VA , Valid for contracts with AgNi0.15 contact-material Relay Type Micro K (V23086-C1/C2 V23086-C1/C2) Micro K SMD , to +105 -40 to +105 -40 to +105 Sealed Sealed Sealed (open venthole) PCB PCB - SMD PCB ... | Original |
16 pages, |
V23074 m28776 m39016/41 V23136 m5757 M6106/19 transistor SMD 12W m39016/17 v23141 w58 transistor V23084 V23136 tyco relay M28776/6 HFW Relay datasheet abstract |
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| Abstract: construction, internal connections and output mounting options. Photo transistor, photo IC and open collector , Actuator Type Photo Interrupter Features OS-5201 OS-5201 Applications · Photo IC and photo transistor , Photo IC and photo transistor output type available. machines and printers. Slot vending machines. , shielding. · Suitable for SMD assembly process (IR reflow, Vapor reflow). · Ultra miniature size for high , such as IC/LSI are standard for high frequency applications. · Suitable for SMD assembly process ... | Original |
13 pages, |
ha-70d PS-1632 os-5602 passive Infrared-Sensor for toilets HYR-9005 camera crane magnetic vertical water level sensor PS-1525 Aleph RPS crane Proximity Sensor PHOTO INTERRUPTOR ALEPH Nippon Aleph PS-1533 ISO9001 QS9000 ISO9001 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| -02-01) Power Derating Curves for SMDs General (1999-01-01) Letter Symbols - Transistors General (1999 ; PNP medium power transistor; 20 V, 1 A General info PNP medium power transistor (see "Simplified outline, symbol and pinning" for Supply line switch MOSFET driver Audio (pre-) amplifier. Medium Power Transistors and BC869 BC869 BC869 BC869 PNP medium power transistor; 20 V, 1 A 8-11-2004 Product Specification 11 www.datasheetarchive.com/files/philips/pip/bc869_6.html |
Philips | 15/06/2005 | 7.93 Kb | HTML | bc869_6.html |
| purpose transistors portfolio (2005-02-01) Power Derating Curves for SMDs General (1999-01-01) Letter ; NPN medium power transistor; 20 V, 1 A General info NPN medium power transistor (see "Simplified outline, symbol and pinning"for package Transistors and Rectifiers for Power Management Applications 2003-12-09 Parametrics TYPENUMBER Datsheet status Page count File size BC868 BC868 BC868 BC868 NPN medium power transistor; 20 V, 1 www.datasheetarchive.com/files/philips/pip/bc868_7.html |
Philips | 15/06/2005 | 6.5 Kb | HTML | bc868_7.html |
| - Logic level TOPFET SMD version of BUK106-50L/S BUK106-50L/S BUK106-50L/S BUK106-50L/S BUK117-50DL BUK117-50DL BUK117-50DL BUK117-50DL - PowerMOS transistor Logic level BUK127-50DL BUK127-50DL BUK127-50DL BUK127-50DL - PowerMOS transistor Logic level TOPFET BUK128-50DL BUK128-50DL BUK128-50DL BUK128-50DL - Logic level TOPFET SMD TDA1519/N2 TDA1519/N2 TDA1519/N2 TDA1519/N2 - 2 x 6 W stereo car radio power amplifier TDA1519B/N2 TDA1519B/N2 TDA1519B/N2 TDA1519B/N2 - 12 W BTL or 2 x 6 W TDA8562Q/N1/S420 TDA8562Q/N1/S420 TDA8562Q/N1/S420 TDA8562Q/N1/S420 - 4 x 12 W single-ended car radio power amplifier with dynamic distortion detector BCX56 BCX56 BCX56 BCX56 - NPN medium power transistors BCX56-10 BCX56-10 BCX56-10 BCX56-10 - NPN medium power transistors www.datasheetarchive.com/files/philips/catalog/listing/27118-v1.html |
Philips | 17/02/2002 | 181.16 Kb | HTML | 27118-v1.html |
| -S) MOSFET OPTION FAIRCHILD FDC653N FDC653N FDC653N FDC653N XSTR, N-CHANNEL FIELD EFFECT TRANSISTOR RES, 1206 10 OHMS 5% 1/4W RES SEMI CMF90A CMF90A CMF90A CMF90A SMD Transient Suppressor Single: 200W Uni-Directional Transient Suppressor, Single: 200W www.datasheetarchive.com/download/31387007-364626ZC/1208a.zip (1208A-3.DSN) |
Linear | 22/09/2009 | 1186.03 Kb | ZIP | 1208a.zip |
| BCX56 BCX56 BCX56 BCX56 - NPN medium power transistors BCX56-10 BCX56-10 BCX56-10 BCX56-10 - NPN medium power transistors BCX56-16 BCX56-16 BCX56-16 BCX56-16 - NPN medium power transistors -FET BST51 BST51 BST51 BST51 - NPN Darlington transistors BUK100-50GL BUK100-50GL BUK100-50GL BUK100-50GL - PowerMOS transistor Logic level TOPFET www.datasheetarchive.com/files/philips/catalog/listing/27118.html |
Philips | 25/04/2003 | 833.95 Kb | HTML | 27118.html |
| , CURRENT LIMITING, SOD-123 CENTRAL SEMI., CMJ2700 CMJ2700 CMJ2700 CMJ2700 TR 8.0 2.0 D3,D4 LED, GREEN, SMD PANASONIC, LN1371 LN1371 LN1371 LN1371 (OPTION) TRANSISTOR, NPN, 300V, SOT-223 (OPTION) FAIRCHILD, PZTA42 PZTA42 PZTA42 PZTA42 14.0 1.0 Q3 TRANSISTOR, NPN, 300V, SOT-223 NXP, PZTA42 PZTA42 PZTA42 PZTA42 ALTERNATE PART NUMBER FOR Q3 FAIRCHILD, PZTA42 PZTA42 PZTA42 PZTA42 15.0 1.0 Q4 TRANSISTOR, NPN, 40V, SOT www.datasheetarchive.com/download/87250393-365065ZC/1935a.zip (DC1935A (A,B)cf .XLS) |
Linear | 24/04/2012 | 812.74 Kb | ZIP | 1935a.zip |
| BCX56 BCX56 BCX56 BCX56 - 80 V, 1 A NPN medium power transistor series -FET BST51 BST51 BST51 BST51 - NPN Darlington transistors BUK100-50GL BUK100-50GL BUK100-50GL BUK100-50GL - PowerMOS transistor Logic level TOPFET BUK100-50GL BUK100-50GL BUK100-50GL BUK100-50GL - PowerMOS transistor Logic level TOPFET BUK100-50GL BUK100-50GL BUK100-50GL BUK100-50GL - PowerMOS transistor Logic level TOPFET www.datasheetarchive.com/files/philips/catalog/listing/27118-v2.html |
Philips | 01/06/2005 | 785.15 Kb | HTML | 27118-v2.html |
| ST | RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY Datasheet RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY PD55008 PD55008 PD55008 PD55008 Document Format Size Raw Text Format 1/10 PRELIMINARY DATA May 2000 PD55008 PD55008 PD55008 PD55008 - PD55008S PD55008S PD55008S PD55008S RF POWER TRANSISTORS -Effect RF power transistor. It is designed for high gain, broad band commercial and industrial excellent gain, linearity and reliability of ST's latest LDMOS tech- nology mounted in the first true SMD www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7164.htm |
STMicroelectronics | 20/10/2000 | 12.13 Kb | HTM | 7164.htm |
| ST | RESISTANCE TO SOLDERING HEAT AND THERMAL CHARACTERISTICS OF SMDS Application Note RESISTANCE TO SOLDERING HEAT AND THERMAL CHARACTERISTICS OF SMDS AN264/0289 AN264/0289 AN264/0289 AN264/0289 AND THERMAL CHARACTERISTICS OF PLASTIC SMDs By C. Cognetti, E. Stroppolo and R. Tiziani percentage of SMDs (active and passive) used in in- dustrial systems produced in Japan was 16.6% in of an expensive learning phase covered by both SMD manufacturers and users. The reliability of www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1699.htm |
STMicroelectronics | 20/10/2000 | 32.86 Kb | HTM | 1699.htm |
| ST | RESISTANCE TO SOLDERING HEAT AND THERMAL CHARACTERISTICS OF SMDS Application Note RESISTANCE TO SOLDERING HEAT AND THERMAL CHARACTERISTICS OF SMDS CHARACTERISTICS OF PLASTIC SMDs By C. Cognetti, E. Stroppolo and R. Tiziani RESISTANCE TO SOLDERING HEAT applications the Western world is interested in. On the other hand, in 1985 the percentage of SMDs learning phase covered by both SMD manufacturers and users. The reliability of plastic SMDs has an www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1699-v3.htm |
STMicroelectronics | 25/05/2000 | 31.9 Kb | HTM | 1699-v3.htm |