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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: MJE3055 MJE3055 TRANSISTOR (NPN) TO-220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 2 W (Tamb=25) 3. EMITTER Collector current ICM: 10 A Collector-base voltage 70 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=1mA, IE=0 70 ... | Original |
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mje3055 transistor MJE3055 transistor MJE3055 MJE3055 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 MJE3055 Plastic-Encapsulate Transistors TO-220 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER GENERAL PURPOSE AND SWITCHING APPLICATIONS. 123 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter , : tp300S, 0.02. VCE=4V, IC=4A VCE=10V, IC=0.5A 2 MHz Typical Characteristics MJE3055 ... | Original |
2 pages, |
mje3055 transistor MJE3055 transistor MJE3055 MJE3055 abstract |
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| Abstract: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors MJE3055 TRANSISTOR (NPN) TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25) 3. EMITTER Collector current 10 A ICM: Collector-base voltage 70 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT ... | Original |
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transistor MJE3055 MJE3055 datasheet abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors MJE3055 TRANSISTOR (NPN) TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25) 3. EMITTER Collector current 10 A ICM: Collector-base voltage 70 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX ... | Original |
1 pages, |
transistor MJE3055 mje3055 MJE3055 MJE3055 abstract |
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| Abstract: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components MJE3055 Features · NPN Silicon Plastic-Encapsulate Transistor Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 2.0Watts of Power Dissipation. Collector-current 10A Collector-base Voltage 70V Operating and storage junction , www.mccsemi.com Revision: 1 1 of 3 2009/05/06 MCC MJE3055 TM Micro Commercial Components ... | Original |
3 pages, |
transistor MJE3055 MJE3055 datasheet abstract |
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| Abstract: current and 10 watt dissipation are needed. A Motorola MJE3055 might be used for the output transistor , because the LED light output and transistor beta have approximately compensating coefficients. Figure , to discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the , operated from logic with 5 volt driving transistor and 0.2 volt VCE saturation is assumed for the driving transistor; a 75 ohm RIF resistor will provide the 48 mA. The forward voltage of the IR-emitting LED is ... | Original |
3 pages, |
npn transistor 60 volt k 2750 transistor total ma4 fe SN7440 MJE205 optocoupler pnp MJE3055 motorola optocoupler 2N3638 transistor MJE3055 pnp phototransistor TRANSISTOR FOR LED 6 VOLT Motorola transistors MJE3055 datasheet abstract |
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| Abstract: dissipation are needed. A Motorola MJE3055 might be used for the output transistor, driven by a MJE205 MJE205 as , over the 0°C to +60°C range because the LED light output and transistor beta have approximately , to discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the , operated from logic with 5 volt driving transistor and 0.2 volt VCE saturation is assumed for the driving transistor; a 75 ohm RIF resistor will provide the 48 mA. The forward voltage of the IR-emitting LED is ... | Original |
3 pages, |
optocoupler NPN optocoupler pnp or npn 2N3638 equivalent transistor MJE3055 MJE205 SN7440 OPTOCOUPLER HAND BOOK PNP DARLINGTON SINK DRIVER npn transistor 60 volt motorola optocoupler pnp phototransistor 2N3638 transistor interposing relay datasheet abstract |
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| Abstract: necessary over the 0 °C to + 60 °C range because the LED light output and transistor beta have , transistor and 0.2 V VCE saturation is assumed for the driving transistor; a 75 RIF resistor will provide , discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the , obtained with the highest beta transistor available, then more than one transistor must be used in cascade. For example, suppose 3 A load current and 10 W dissipation are needed. A Motorola MJE3055 might ... | Original |
4 pages, |
transistor MJE3055 MJE205 mje3055 83704 optocoupler pnp or npn 2N3638 transistor SN7440 2N3638 DARLINGTON phototransistor 14 optocoupler base resistor 2n3568 pnp phototransistor transistor current booster circuit datasheet abstract |
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| Abstract: needed. A Motorola MJE3055 might be used for the output transistor, driven by a MJE205 MJE205 as shown in , derating is not usually necessary over the 0°C to +60°C range because the LED light output and transistor , If the IL1 is being operated from logic with 5 volt driving transistor and 0.2 volt VCE saturation is , discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the , requires more current than can be obtained with the highest beta transistor available, then more than one ... | Original |
3 pages, |
MJE205 mje3055 mje3055 data 2N3638 optocoupler pnp PNP DARLINGTON SINK DRIVER relay driver circuit using transistor SN7440 DARLINGTON phototransistor 14 transistor MJE3055 optocoupler pnp or npn optocoupler base resistor transistor current booster circuit datasheet abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252 Plastic-Encapsulate Transistors MJD3055 MJD3055 TRANSISTOR (NPN) TO-251 TO-252-2L FEATURES Designed for general purpose amplifier and low speed switching applications . 123 1.BASE Electrically simiar to MJE3055. 2.COLLECTOR DC current gain specified to10 Amperes 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V VCEO ... | Original |
2 pages, |
transistor MJE3055 MJD3055 500KHZ MJE3055 MJD3055 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| element component template mje3055t c b e #* # Model Generated by MODPEX * #Copyright(c) Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE * # Contains Proprietary Information * # Which is The Property of * # SYMMETRY OR ITS LICENSORS * # Modeling services provided by * # Interface Technologies www.i-t.com * #* # MODPEX model for BJT transistor mje3055t # Model generated on Jan 18, 2004 electrical c,b,e { # BODY www.datasheetarchive.com/files/on_semiconductor/simulation-models/mje3055t.sin |
On Semiconductor | 30/03/2009 | 1.13 Kb | SIN | mje3055t.sin |
| ST | COMPLEMENTARY SILICON POWER TRANSISTORS Datasheet COMPLEMENTARY SILICON POWER TRANSISTORS MJE2955T MJE2955T MJE2955T MJE2955T MJE3055T Document Format Size Document Number Date Update Pages Portable Document Format 4168 02/09/1997 4 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/4168-v4.htm |
STMicroelectronics | 25/05/2000 | 2.79 Kb | HTM | 4168-v4.htm |
| ST | COMPLEMENTARY SILICON POWER TRANSISTORS Datasheet COMPLEMENTARY SILICON POWER TRANSISTORS MJE2955T MJE2955T MJE2955T MJE2955T MJE3055T Document Format Size Document Number Date Update Pages Portable Document Format 4168 02/09/1997 4 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/4168-v3.htm |
STMicroelectronics | 20/10/2000 | 2.84 Kb | HTM | 4168-v3.htm |
| SGS-THOMSON | COMPLEMENTARY SILICON POWER TRANSISTORS MJE2955T MJE2955T MJE2955T MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS Document Number: 4168 Date Update: 02/09/97 Pages: 4 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/4168.htm |
STMicroelectronics | 06/02/1998 | 0.93 Kb | HTM | 4168.htm |
| ST | COMPLEMENTARY SILICON POWER TRANSISTORS MJE2955T MJE2955T MJE2955T MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS Document Number: 4168 Date Update: 02/09/97 Pages: 4 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/4168-v1.htm |
STMicroelectronics | 31/03/1999 | 0.91 Kb | HTM | 4168-v1.htm |
| ST | COMPLEMENTARY SILICON POWER TRANSISTORS MJE2955T MJE2955T MJE2955T MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS Document Number: 4168 Date Update: 02/09/97 Pages: 4 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/4168-v2.htm |
STMicroelectronics | 14/06/1999 | 0.88 Kb | HTM | 4168-v2.htm |
| COMPLEMENTARY SILICON POWER TRANSISTORS MJE2955T MJE2955T MJE2955T MJE2955T MJE3055T Document Format Size 02/09/1997 4 Raw Text Format MJE2955T MJE2955T MJE2955T MJE2955T MJE3055T DESCRIPTION The MJE3055T is a silicon epitaxial negative. MJE2955T MJE2955T MJE2955T MJE2955T / MJE3055T 2/4 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0 L9 F2 G1 TO-220 MECHANICAL DATA P011C P011C P011C P011C MJE2955T MJE2955T MJE2955T MJE2955T / MJE3055T 3/4 Information furnished is www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4168.htm |
STMicroelectronics | 20/10/2000 | 6.83 Kb | HTM | 4168.htm |
| Datasheet COMPLEMENTARY SILICON POWER TRANSISTORS MJE2955T MJE2955T MJE2955T MJE2955T MJE3055T Text Format MJE2955T MJE2955T MJE2955T MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is % For PNP type voltage and current values are negative. MJE2955T MJE2955T MJE2955T MJE2955T / MJE3055T 2/4 DIM. mm inch MECHANICAL DATA P011C P011C P011C P011C MJE2955T MJE2955T MJE2955T MJE2955T / MJE3055T 3/4 Information furnished is believed to be accurate and www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4168-v3.htm |
STMicroelectronics | 25/05/2000 | 6.52 Kb | HTM | 4168-v3.htm |
| ST | COMPLEMENTARY SILICON POWER TRANSISTORS MJE2955T MJE2955T MJE2955T MJE2955T MJE3055T COMPLEMENTARY SILICON Format MJE2955T MJE2955T MJE2955T MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS n ST PREFERRED SALESTYPES n COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T . MJE2955T MJE2955T MJE2955T MJE2955T / MJE3055T 2/4 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1 2955T 2955T 2955T 2955T / MJE3055T 3/4 Information furnished is believed to be accurate and reliable. However, SGS www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4168-v2.htm |
STMicroelectronics | 14/06/1999 | 4.68 Kb | HTM | 4168-v2.htm |