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BCV26_L99Z Fairchild Semiconductor Corporation PNP Darlington Transistor ri Buy
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KSA1156YSTSTU_NL Fairchild Semiconductor Corporation PNP Silicon Transistor ri Buy

transistor MJE3055

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MJE3055(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER Features 1 2 3 GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage , =70V, IE=0 VEB=5V, IC=0 VCE=4V, IC=4A Note:*Pulse test: tp300S, 0.02. MJE3055(NPN) TO-220 Transistor Typical Characteristics - ... Original
datasheet

2 pages,
219.56 Kb

mje3055 transistor transistor MJE3055 MJE3055 TEXT
datasheet frame
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 MJE3055 Plastic-Encapsulate Transistors TO-220 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER GENERAL PURPOSE AND SWITCHING APPLICATIONS. 123 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter , : tp300S, 0.02. VCE=4V, IC=4A VCE=10V, IC=0.5A 2 MHz Typical Characteristics MJE3055 ... Jiangsu Changjiang Electronics Technology
Original
datasheet

2 pages,
105.99 Kb

mje3055 transistor MJE3055 transistor MJE3055 TEXT
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 MJE3055 Plastic-Encapsulate Transistors TO-220 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 , Characteristics MJE3055 A,Mar,2011 Jiangsu Changjiang Electronics Technology ... Jiangsu Changjiang Electronics Technology
Original
datasheet

2 pages,
158.99 Kb

MJE3055 TEXT
datasheet frame
Abstract: MJE3055 MJE3055 TRANSISTOR (NPN) TO-220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 2 W (Tamb=25) 3. EMITTER Collector current ICM: 10 A Collector-base voltage 70 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=1mA, IE=0 70 V ... WEJ Electronic
Original
datasheet

1 pages,
102.13 Kb

ic 400ma, npn transistor mje3055 transistor MJE3055 transistor MJE3055 TEXT
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Abstract: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components MJE3055 Features · NPN Silicon Plastic-Encapsulate Transistor Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 2.0Watts of Power Dissipation. Collector-current 10A Collector-base Voltage 70V Operating and storage junction , Revision: 1 1 of 3 2009/05/06 MCC MJE3055 TM Micro Commercial Components Typical ... Micro Commercial Components
Original
datasheet

3 pages,
160.62 Kb

transistor MJE3055 MJE3055 TEXT
datasheet frame
Abstract: necessary over the 0 °C to + 60 °C range because the LED light output and transistor beta have , transistor and 0.2 V VCE saturation is assumed for the driving transistor; a 75 RIF resistor will provide , discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the , obtained with the highest beta transistor available, then more than one transistor must be used in cascade. For example, suppose 3 A load current and 10 W dissipation are needed. A Motorola MJE3055 might ... Vishay Semiconductors
Original
datasheet

4 pages,
61.04 Kb

mje3055 DARLINGTON phototransistor 14 motorola mje3055 83704 relay driver circuit using transistor 2N3638 MJE205 optocoupler base resistor optocoupler drive relay optocoupler pnp motorola optocoupler Motorola transistors MJE3055 optocoupler pnp or npn pnp phototransistor transistor current booster circuit 2N3638 transistor transistor MJE3055 mje3055 data 2n3568 opto-coupler darlington pnp TEXT
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Abstract: current and 10 watt dissipation are needed. A Motorola MJE3055 might be used for the output transistor , because the LED light output and transistor beta have approximately compensating coefficients. Figure , to discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the , operated from logic with 5 volt driving transistor and 0.2 volt VCE saturation is assumed for the driving transistor; a 75 ohm RIF resistor will provide the 48 mA. The forward voltage of the IR-emitting LED is ... Vishay Intertechnology
Original
datasheet

3 pages,
371.39 Kb

darlington transistor power MJE3055 mje3055 data motorola optocoupler npn transistor 60 volt optocoupler pnp optocoupler pnp or npn pnp optocoupler SN7440 TRANSISTOR FOR LED 6 VOLT pnp phototransistor transistor MJE3055 2N3638 Motorola transistors MJE3055 12 volt dc operated power led circuit 2N3638 transistor k 2750 transistor 2N3568 transistor current booster circuit opto-coupler darlington pnp TEXT
datasheet frame
Abstract: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MJE3055 Features · · · · · · · · Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 2.0Watts of Power Dissipation , NPN Silicon Plastic-Encapsulate Transistor Epoxy meets UL 94 V-0 flammability rating Moisure , 2011/06/01 MJE3055 Typical Characteristics MCC Micro Commercial Components TM Revision: B ... Micro Commercial Components
Original
datasheet

3 pages,
273.27 Kb

2 N MJE3055 transistor MJE3055 mje3055 TEXT
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Abstract: dissipation are needed. A Motorola MJE3055 might be used for the output transistor, driven by a MJE205 MJE205 as , over the 0°C to +60°C range because the LED light output and transistor beta have approximately , to discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the , operated from logic with 5 volt driving transistor and 0.2 volt VCE saturation is assumed for the driving transistor; a 75 ohm RIF resistor will provide the 48 mA. The forward voltage of the IR-emitting LED is ... Infineon Technologies
Original
datasheet

3 pages,
53.4 Kb

motorola optocoupler npn transistor 60 volt PNP DARLINGTON SINK DRIVER transistor MJE3055 MJE205 SN7440 mje3055 pnp phototransistor interposing relay opto-coupler darlington pnp optocoupler NPN 2N3638 k 2750 transistor transistor current booster circuit TRANSISTOR FOR LED 6 VOLT K39 2 GATE Motorola transistors MJE3055 2N3638 transistor optocoupler pnp 2N3568 TEXT
datasheet frame
Abstract: needed. A Motorola MJE3055 might be used for the output transistor, driven by a MJE205 MJE205 as shown in , derating is not usually necessary over the 0°C to +60°C range because the LED light output and transistor , the IL1 is being operated from logic with 5 volt driving transistor and 0.2 volt VCE saturation is , discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the , requires more current than can be obtained with the highest beta transistor available, then more than one ... Siemens
Original
datasheet

3 pages,
32.95 Kb

optocoupler drive relay 2N3638 transistor optocoupler pnp irb260 PNP DARLINGTON SINK DRIVER relay driver circuit using transistor SN7440 MJE205 2N3638 DARLINGTON phototransistor 14 optocoupler base resistor transistor current booster circuit optocoupler pnp or npn transistor MJE3055 mje3055 data pnp phototransistor Motorola transistors MJE3055 OPTOCOUPLER HAND BOOK 2N3568 opto-coupler darlington pnp TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/datasheets/files/spicemodels/misc/modelos/spice_complete/cadlab.lib
Spice Models 18/04/2010 111.54 Kb LIB cadlab.lib
* Library of power bipolar transistor model parameters electrically equivalent with the * device they reference. * Transistor die process models (50th percentile) * * Some manufacturers provide complete and statistically accurate measurements * for their transistor die Semiconductor * Transistor Databook, 1982, process 36, pg 9-4 * 29 Nov 90 pwt creation *$ .model NSC_4A ) * National Semiconductor * Transistor Databook, 1982, process 4A, pg 9-7 * 30 Nov 90 pwt creation *$
/datasheets/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/pwrbjt.lib
Spice Models 29/07/2012 263.43 Kb LIB pwrbjt.lib
* Library of power bipolar transistor model parameters electrically equivalent with the * device they reference. * Transistor die process models (50th percentile) * * Some manufacturers provide complete and statistically accurate measurements * for their transistor die Semiconductor * Transistor Databook, 1982, process 36, pg 9-4 * 29 Nov 90 pwt creation *$ .model NSC_4A ) * National Semiconductor * Transistor Databook, 1982, process 4A, pg 9-7 * 30 Nov 90 pwt creation *$
/datasheets/files/spicemodels/misc/pwrbjt.lib
Spice Models 17/06/2000 277.98 Kb LIB pwrbjt.lib
NPN TRANSISTOR LOW VOLTAGE (< 160 V) COMMODITIES Power Bipolar 228 MJ4502 MJ4502 2N3021 2N3021 Nearest Preferred Bipolar 228 4204 BSS44 BSS44 2N3202 2N3202 Nearest Preferred Gold Standard SILICON NPN TRANSISTOR LOW VOLTAGE (< 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 2N3203 2N3203 Nearest Preferred Gold Standard SILICON NPN TRANSISTOR LOW Bipolar 227 4215 BUX10 BUX10 2N3240 2N3240 Nearest Preferred Gold Standard HIGH CURRENT NPN SILICON TRANSISTOR MEDIUM Preferred Gold Standard SILICON NPN TRANSISTOR LOW VOLTAGE (< 160 V) COMMODITIES Power Bipolar 228 4088
/datasheets/files/stmicroelectronics/stonline/db/xref-v2.txt
STMicroelectronics 11/06/1999 1361.18 Kb TXT xref-v2.txt
( < 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 2N3202 2N3202 Nearest Preferred SILICON NPN TRANSISTOR NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 MJ802 MJ802 2N3232 2N3232 Nearest NPN SILICON TRANSISTOR MEDIUM and HIGH VOLTAGE ( > 150 V) SWITCHING TRANSISTORS Power Bipolar 227 2N3719 2N3719 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 2N3720 2N3720 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V
/datasheets/files/stmicroelectronics/stonline/db/xref-v4.txt
STMicroelectronics 31/01/2001 1362.78 Kb TXT xref-v4.txt
V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 2N3202 2N3202 Nearest Preferred SILICON NPN TRANSISTOR LOW TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 MJ802 MJ802 2N3232 2N3232 Nearest Preferred LOW CURRENT NPN SILICON TRANSISTOR MEDIUM and HIGH VOLTAGE ( > 150 V) SWITCHING TRANSISTORS Power Bipolar Power Bipolar 228 4204 BSS44 BSS44 2N3719 2N3719 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 2N3720 2N3720 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( <
/datasheets/files/stmicroelectronics/stonline/db/xref-v1.txt
STMicroelectronics 20/10/2000 1859.39 Kb TXT xref-v1.txt
( < 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 2N3202 2N3202 Nearest Preferred SILICON NPN TRANSISTOR NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 MJ802 MJ802 2N3232 2N3232 Nearest NPN SILICON TRANSISTOR MEDIUM and HIGH VOLTAGE ( > 150 V) SWITCHING TRANSISTORS Power Bipolar 227 2N3719 2N3719 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V) COMMODITIES Power Bipolar 228 4204 BSS44 BSS44 2N3720 2N3720 Nearest Preferred SILICON NPN TRANSISTOR LOW VOLTAGE ( < 160 V
/datasheets/files/stmicroelectronics/stonline/db/xref-v3.txt
STMicroelectronics 20/10/2000 1842.28 Kb TXT xref-v3.txt
No abstract text available
/download/63482201-592495ZC/price-04.zip ()
NEDIS 22/02/2001 1894.94 Kb ZIP price-04.zip
No abstract text available
/download/15008676-592499ZC/price-07.zip ()
NEDIS 26/02/2001 1872.34 Kb ZIP price-07.zip