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Part : TRANSISTOR KIT Supplier : Jameco Manufacturer : Jameco Electronics Stock : 20 Best Price : $59.95 Price Each : $69.95
Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 148 Best Price : $1.26 Price Each : $1.32
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transistor MJE3055

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MJE3055(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER Features 1 2 3 GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage , =70V, IE=0 VEB=5V, IC=0 VCE=4V, IC=4A Note:*Pulse test: tp300S, 0.02. MJE3055(NPN) TO-220 Transistor Typical Characteristics - -
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mje3055 transistor MJE3055 TO-225
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 MJE3055 Plastic-Encapsulate Transistors TO-220 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER GENERAL PURPOSE AND SWITCHING APPLICATIONS. 123 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter , : tp300S, 0.02. VCE=4V, IC=4A VCE=10V, IC=0.5A 2 MHz Typical Characteristics MJE3055 Jiangsu Changjiang Electronics Technology
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 MJE3055 Plastic-Encapsulate Transistors TO-220 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 , Characteristics MJE3055 A,Mar,2011 Jiangsu Changjiang Electronics Technology Jiangsu Changjiang Electronics Technology
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O-220
Abstract: MJE3055 MJE3055 TRANSISTOR (NPN) TO-220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 2 W (Tamb=25) 3. EMITTER Collector current ICM: 10 A Collector-base voltage 70 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=1mA, IE=0 70 V WEJ Electronic
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ic 400ma, npn transistor
Abstract: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components MJE3055 Features · NPN Silicon Plastic-Encapsulate Transistor Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 2.0Watts of Power Dissipation. Collector-current 10A Collector-base Voltage 70V Operating and storage junction , Revision: 1 1 of 3 2009/05/06 MCC MJE3055 TM Micro Commercial Components Typical Micro Commercial Components
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20100G
Abstract: necessary over the 0 °C to + 60 °C range because the LED light output and transistor beta have , transistor and 0.2 V VCE saturation is assumed for the driving transistor; a 75 RIF resistor will provide , discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the , obtained with the highest beta transistor available, then more than one transistor must be used in cascade. For example, suppose 3 A load current and 10 W dissipation are needed. A Motorola MJE3055 might Vishay Semiconductors
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2N3638 opto-coupler darlington pnp 2n3568 mje3055 data 2N3638 transistor transistor current booster circuit Motorola transistors MJE3055 2N3568
Abstract: current and 10 watt dissipation are needed. A Motorola MJE3055 might be used for the output transistor , because the LED light output and transistor beta have approximately compensating coefficients. Figure , to discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the , operated from logic with 5 volt driving transistor and 0.2 volt VCE saturation is assumed for the driving transistor; a 75 ohm RIF resistor will provide the 48 mA. The forward voltage of the IR-emitting LED is Vishay Intertechnology
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k 2750 transistor 12 volt dc operated power led circuit pnp phototransistor optocoupler pnp TRANSISTOR FOR LED 6 VOLT SN7440
Abstract: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MJE3055 Features · · · · · · · · Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 2.0Watts of Power Dissipation , NPN Silicon Plastic-Encapsulate Transistor Epoxy meets UL 94 V-0 flammability rating Moisure , 2011/06/01 MJE3055 Typical Characteristics MCC Micro Commercial Components TM Revision: B Micro Commercial Components
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2 N MJE3055
Abstract: dissipation are needed. A Motorola MJE3055 might be used for the output transistor, driven by a MJE205 as , over the 0°C to +60°C range because the LED light output and transistor beta have approximately , to discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the , operated from logic with 5 volt driving transistor and 0.2 volt VCE saturation is assumed for the driving transistor; a 75 ohm RIF resistor will provide the 48 mA. The forward voltage of the IR-emitting LED is Infineon Technologies
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optocoupler pnp or npn K39 2 GATE optocoupler NPN interposing relay OPTOCOUPLER HAND BOOK optocoupler base resistor 1-888-I
Abstract: needed. A Motorola MJE3055 might be used for the output transistor, driven by a MJE205 as shown in , derating is not usually necessary over the 0°C to +60°C range because the LED light output and transistor , the IL1 is being operated from logic with 5 volt driving transistor and 0.2 volt VCE saturation is , discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the , requires more current than can be obtained with the highest beta transistor available, then more than one Siemens
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DARLINGTON phototransistor 14 relay driver circuit using transistor PNP DARLINGTON SINK DRIVER optocoupler drive relay irb260
Abstract: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MJE3055 Features · · · · · · · Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 2.0Watts of Power Dissipation , NPN Silicon Plastic-Encapsulate Transistor Epoxy meets UL 94 V-0 flammability rating Moisure , Annex 7. www.mccsemi.com Revision: A 1 of 3 2011/01/01 MJE3055 Typical Characteristics Micro Commercial Components
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Abstract: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors MJE3055 TRANSISTOR (NPN) TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25) 3. EMITTER Collector current 10 A ICM: Collector-base voltage 70 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX Transys Electronics
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors MJE3055 TRANSISTOR (NPN) TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25) 3. EMITTER Collector current 10 A ICM: Collector-base voltage 70 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX Jiangsu Changjiang Electronics Technology
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Abstract: KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS · · · · · Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I.PACK, I " Suffix) Electrically Similar to Popular MJE3055 DC Current Gain Specified to 10A High Current Gain-Bandwidth Product: fT= 2MHz (MIN), lc = 500mA D-PAK ABSOLUTE , % 100 ELECTRONICS KSH3055 NPN EPITAXIAL SILICON TRANSISTOR DC CURRENT QAIN BASE EMITTER -
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DPAC 500KH
Abstract: MCC #1;#2;#3;#4;#5;#6;#7;#5;#8;#8; #4;#3;#2; #11;#6;#7;omponents 20736 Marilla Street Chatsworth #7;#24;#6;#25;#15;#26;#15;#15; #27;#21;#5;#28; #29;#6;#30;#31;#15;#31; #6;!#16;#15;"##25;#26;#26; $ %#29;#6; #6; #6; #30;#31;#15;#31; #6;!#16;#15;"##25;#26;#25; TM Micro Commercial Components MJE3055 Features â'¢ Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant(Note 1) ("P" , OC â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ NPN Silicon Plastic-Encapsulate Transistor , 2013/01/01 MCC MJE3055 TM Micro Commercial Components Typical Characteristics Micro Commercial Components
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors MJD3055 TRANSISTOR (NPN) TO-251 FEATURES Designed for General Purpose Amplifier and Low Speed Switching Applications 1.BASE 2.COLLECTOR Electrically Simiar to MJE3055 DC Current Gain Specified to10 Amperes 3.EMITTER MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage Jiangsu Changjiang Electronics Technology
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500KHZ
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252 Plastic-Encapsulate Transistors MJD3055 TRANSISTOR (NPN) TO-251 TO-252-2L FEATURES Designed for general purpose amplifier and low speed switching applications . 123 1.BASE Electrically simiar to MJE3055. 2.COLLECTOR DC current gain specified to10 Amperes 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V VCEO Jiangsu Changjiang Electronics Technology
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 MJE3055 Plastic-Encapsulate Transistors TRANSISTOR (NPN) TO-220 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER General Purpose and Switching Applications MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 10 A PC Jiangsu Changjiang Electronics Technology
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Abstract: TO-251/TO-252-2L Transistor MJD3055(NPN) TO-251 1.BASE 2.COLLECTOR 3.EMITTER Features switching 1 2 3 Designed for general purpose amplifier and low speed applications . Electrically simiar to MJE3055. DC current gain specified to10 Amperes MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage , Ic=1mA,IE=0 Ic=200 mA,IB=0 IE=1mA,IC=0 VCB=70V,IE=0 TO-251/TO-252-2L Transistor MJD3055(NPN -
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Abstract: MJD3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATONS DPAK FOR SURFACE MOUNT APPLICATIONS â'¢ Lead Formed for Surface Mount Applications (No Suffix) « Straight Lead (I. PACK," -I" Suffix) â'¢ Electrically Similar to Popular MJE3055 â'¢ DC Current Gain Specified to 10A â'¢ High Current Gain - Bandwidth Product: fT = 2MHz (MIN), lc = 500mA ABSOLUTE MAXIMUM , EPITAXIAL SILICON TRANSISTOR OC CU*«*)* 5A1N EASE EMITTER SAIHftATtOM VOLTAGE coueefcm fcMims -
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1As transistor
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