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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

transistor MJE3055

Catalog Datasheet MFG & Type PDF Document Tags

MJE3055

Abstract: transistor MJE3055 MJE3055(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER Features 1 2 3 GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage , =70V, IE=0 VEB=5V, IC=0 VCE=4V, IC=4A Note:*Pulse test: tp300S, 0.02. MJE3055(NPN) TO-220 Transistor Typical Characteristics -
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transistor MJE3055 mje3055 transistor MJE3055 TO-225

transistor MJE3055

Abstract: MJE3055 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 MJE3055 Plastic-Encapsulate Transistors TO-220 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER GENERAL PURPOSE AND SWITCHING APPLICATIONS. 123 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter , : tp300S, 0.02. VCE=4V, IC=4A VCE=10V, IC=0.5A 2 MHz Typical Characteristics MJE3055
Jiangsu Changjiang Electronics Technology
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MJE3055 TO-225

Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 MJE3055 Plastic-Encapsulate Transistors TO-220 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 , Characteristics MJE3055 A,Mar,2011 Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
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O-220

transistor MJE3055

Abstract: MJE3055 MJE3055 MJE3055 TRANSISTOR (NPN) TO-220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 2 W (Tamb=25) 3. EMITTER Collector current ICM: 10 A Collector-base voltage 70 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=1mA, IE=0 70 V
WEJ Electronic
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ic 400ma, npn transistor

MJE3055

Abstract: 20100G MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components MJE3055 Features · NPN Silicon Plastic-Encapsulate Transistor Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 2.0Watts of Power Dissipation. Collector-current 10A Collector-base Voltage 70V Operating and storage junction , Revision: 1 1 of 3 2009/05/06 MCC MJE3055 TM Micro Commercial Components Typical
Micro Commercial Components
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20100G

opto-coupler darlington pnp

Abstract: 2n3568 necessary over the 0 °C to + 60 °C range because the LED light output and transistor beta have , transistor and 0.2 V VCE saturation is assumed for the driving transistor; a 75 RIF resistor will provide , discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the , obtained with the highest beta transistor available, then more than one transistor must be used in cascade. For example, suppose 3 A load current and 10 W dissipation are needed. A Motorola MJE3055 might
Vishay Semiconductors
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2N3638 opto-coupler darlington pnp 2n3568 mje3055 data 2N3638 transistor transistor current booster circuit optocoupler pnp or npn 2N3568

opto-coupler darlington pnp

Abstract: transistor current booster circuit current and 10 watt dissipation are needed. A Motorola MJE3055 might be used for the output transistor , because the LED light output and transistor beta have approximately compensating coefficients. Figure , to discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the , operated from logic with 5 volt driving transistor and 0.2 volt VCE saturation is assumed for the driving transistor; a 75 ohm RIF resistor will provide the 48 mA. The forward voltage of the IR-emitting LED is
Vishay Intertechnology
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k 2750 transistor 12 volt dc operated power led circuit Motorola transistors MJE3055 pnp phototransistor TRANSISTOR FOR LED 6 VOLT optocoupler pnp

mje3055

Abstract: transistor MJE3055 MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MJE3055 Features · · · · · · · · Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 2.0Watts of Power Dissipation , NPN Silicon Plastic-Encapsulate Transistor Epoxy meets UL 94 V-0 flammability rating Moisure , 2011/06/01 MJE3055 Typical Characteristics MCC Micro Commercial Components TM Revision: B
Micro Commercial Components
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2 N MJE3055

2N3568

Abstract: optocoupler pnp dissipation are needed. A Motorola MJE3055 might be used for the output transistor, driven by a MJE205 as , over the 0°C to +60°C range because the LED light output and transistor beta have approximately , to discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the , operated from logic with 5 volt driving transistor and 0.2 volt VCE saturation is assumed for the driving transistor; a 75 ohm RIF resistor will provide the 48 mA. The forward voltage of the IR-emitting LED is
Infineon Technologies
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optocoupler NPN K39 2 GATE OPTOCOUPLER HAND BOOK interposing relay 2N3638 equivalent motorola optocoupler 1-888-I

opto-coupler darlington pnp

Abstract: 2N3568 needed. A Motorola MJE3055 might be used for the output transistor, driven by a MJE205 as shown in , derating is not usually necessary over the 0°C to +60°C range because the LED light output and transistor , the IL1 is being operated from logic with 5 volt driving transistor and 0.2 volt VCE saturation is , discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the , requires more current than can be obtained with the highest beta transistor available, then more than one
Siemens
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optocoupler base resistor DARLINGTON phototransistor 14 SN7440 relay driver circuit using transistor irb260 optocoupler drive relay

MJE3055

Abstract: 2 N MJE3055 MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MJE3055 Features · · · · · · · Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 2.0Watts of Power Dissipation , NPN Silicon Plastic-Encapsulate Transistor Epoxy meets UL 94 V-0 flammability rating Moisure , Annex 7. www.mccsemi.com Revision: A 1 of 3 2011/01/01 MJE3055 Typical Characteristics
Micro Commercial Components
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MJE3055

Abstract: transistor MJE3055 Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors MJE3055 TRANSISTOR (NPN) TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25) 3. EMITTER Collector current 10 A ICM: Collector-base voltage 70 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX
Transys Electronics
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mje3055

Abstract: transistor MJE3055 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors MJE3055 TRANSISTOR (NPN) TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25) 3. EMITTER Collector current 10 A ICM: Collector-base voltage 70 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX
Jiangsu Changjiang Electronics Technology
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DPAC

Abstract: mje3055 KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS · · · · · Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I.PACK, I " Suffix) Electrically Similar to Popular MJE3055 DC Current Gain Specified to 10A High Current Gain-Bandwidth Product: fT= 2MHz (MIN), lc = 500mA D-PAK ABSOLUTE , % 100 ELECTRONICS KSH3055 NPN EPITAXIAL SILICON TRANSISTOR DC CURRENT QAIN BASE EMITTER
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DPAC 500KH
Abstract: MCC #1;#2;#3;#4;#5;#6;#7;#5;#8;#8; #4;#3;#2; #11;#6;#7;omponents 20736 Marilla Street Chatsworth #7;#24;#6;#25;#15;#26;#15;#15; #27;#21;#5;#28; #29;#6;#30;#31;#15;#31; #6;!#16;#15;"##25;#26;#26; $ %#29;#6; #6; #6; #30;#31;#15;#31; #6;!#16;#15;"##25;#26;#25; TM Micro Commercial Components MJE3055 Features â'¢ Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant(Note 1) ("P" , OC â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ NPN Silicon Plastic-Encapsulate Transistor , 2013/01/01 MCC MJE3055 TM Micro Commercial Components Typical Characteristics Micro Commercial Components
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors MJD3055 TRANSISTOR (NPN) TO-251 FEATURES Designed for General Purpose Amplifier and Low Speed Switching Applications 1.BASE 2.COLLECTOR Electrically Simiar to MJE3055 DC Current Gain Specified to10 Amperes 3.EMITTER MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage Jiangsu Changjiang Electronics Technology
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500KHZ
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 MJE3055 Plastic-Encapsulate Transistors TRANSISTOR (NPN) TO-220 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER General Purpose and Switching Applications MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 10 A PC Jiangsu Changjiang Electronics Technology
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MJE3055

Abstract: transistor MJE3055 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252 Plastic-Encapsulate Transistors MJD3055 TRANSISTOR (NPN) TO-251 TO-252-2L FEATURES Designed for general purpose amplifier and low speed switching applications . 123 1.BASE Electrically simiar to MJE3055. 2.COLLECTOR DC current gain specified to10 Amperes 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V VCEO
Jiangsu Changjiang Electronics Technology
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transistor MJE3055

Abstract: MJE3055 TO-251/TO-252-2L Transistor MJD3055(NPN) TO-251 1.BASE 2.COLLECTOR 3.EMITTER Features switching 1 2 3 Designed for general purpose amplifier and low speed applications . Electrically simiar to MJE3055. DC current gain specified to10 Amperes MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage , Ic=1mA,IE=0 Ic=200 mA,IB=0 IE=1mA,IC=0 VCB=70V,IE=0 TO-251/TO-252-2L Transistor MJD3055(NPN
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transistor MJE3055

Abstract: MJE3055 MJD3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATONS DPAK FOR SURFACE MOUNT APPLICATIONS â'¢ Lead Formed for Surface Mount Applications (No Suffix) « Straight Lead (I. PACK," -I" Suffix) â'¢ Electrically Similar to Popular MJE3055 â'¢ DC Current Gain Specified to 10A â'¢ High Current Gain - Bandwidth Product: fT = 2MHz (MIN), lc = 500mA ABSOLUTE MAXIMUM , EPITAXIAL SILICON TRANSISTOR OC CU*«*)* 5A1N EASE EMITTER SAIHftATtOM VOLTAGE coueefcm fcMims
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1As transistor
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