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transistor C5001

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SC5001F5 Transistor, NPN Features · · · · available in CPT F5 (SC-63) package package marking: C5001 where is hF£ code and is lot number high-speed switching, tf = 0.3 |is for Ic = 6 A low , Single pulse, Pw = 10 ms Pc Ti ^stg 216 M H ffl Surface Mount Transistors Transistor , - 560 Surface Mount Transistors noHm 217 2SC5001F5 Transistor, NPN, 2SC series , Transistors Transistor, NPN, 2SC series 2SC5001F5 EMITTER CURRENT : lE (A) COLLECTOR TO BA SE -
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C5001 transistor transistor marking C5001 C5001 R transistor B 560 2SA1834
Abstract: 2SC4939 Transistor, NPN Features â'¢ available in PSD package â'¢ high-speed switching , Transistors : â  7020^1 oomaoo 145 â  Transistor, NPN, 2SC series 2SC5001F5 Electrical characteristics , O-WV - Pw Iâ'" I to Pwâ'"50/iS duty cycles 1% Base current waveform 'J Transistor _ under test -=- , aomaDi oai 2SC5001F5 Transistor, NPN Features â'¢ available in CPT F5 (SC-63) package â'¢ package marking: C5001*Q, where ☠is hFE code and Q is lot number â'¢ high-speed switching, tf = 0.3 (as for lc -
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TRANSISTOR MARKING YB marking code Yb Transistor CC OWV W C5001Q transistor marking 6A 2SC SERIES
Abstract: 2SC5001 Datasheet NPN 10A 20V Middle Power Transistor lOutline Parameter Value VCEO IC 20V 10A Collector CPT3 Base Emitter 2SC5001 (SC-63) lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1834 3) Low VCE(sat) VCE(sat)= 0.25V(Max.) (IC/IB= 4A/ 0.05A) 4) Large collector current : IC= 10A (DC Max.) 5) Lead Free/RoHS Compliant , Reel size Tape width ordering (mm) (mm) unit (pcs) 330 16 2,500 Marking C5001 2013.07 ROHM
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R1102A
Abstract: ) each transistor -55 -55 -55 INTRODUCTION The 3-phase PWR-82330 is a 5 A motor drive hybrid which , rms)2 x Ron the signals at the VU and VL pins; this ensures the complete turn-off of any transistor before turning on its associated in-line transistor. I motor rms = IOB - IOB (IOB - IOA) + 2 , return. TRANSISTOR POWER DISSIPATION ( PQ) To calculate the maximum power dissipation of the output transistor as a function of the case temperature use the following equation. (Reference FIGURE 8 to ensure Data Device
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C5001 mosfet VLC5032 PWR82330 MIL-STD-883 1-800-DDC-5757 A5976 C-11/99-500
Abstract: ) each transistor 0z (g) NOTES: 1. For Hi-Rel applications, derating per MIL-S-19500 should be , of any transistor before turning on its associated in-line transistor. IOB - IOB (IOB - IOA) + , , and of lowest impedance, as the system allows. Pd = 2.5 A x 1.25 V Pd = 3.125 Watts TRANSISTOR POWER DISSIPATION ( PQ) To calculate the maximum power dissipation of the output transistor as a , exceed the maximum allowable power dissipation of each transistor. C1, C2, and C3 are 0.1 ÂuF ceramic Data Device
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C-07/99-500
Abstract: ) each transistor -55 -55 -55 INTRODUCTION The 3-phase PWR-82330 is a 5 A motor drive hybrid which , rms)2 x Ron the signals at the VU and VL pins; this ensures the complete turn-off of any transistor before turning on its associated in-line transistor. I motor rms = IOB - IOB (IOB - IOA) + 2 , return. TRANSISTOR POWER DISSIPATION ( PQ) To calculate the maximum power dissipation of the output transistor as a function of the case temperature use the following equation. (Reference FIGURE 8 to ensure Data Device
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D-11/06-0
Abstract: and R3 = 47 Transistor Q1 is configured with its base and collector tied together. This acts as a , transistor model used in the simulation is based on the work of Curtice [3]. Although this model closely , transistor at high bias, a better model is needed. The model can be downloaded from Agilent's web-site , of the PNP transistors is high. Thus by forcing the emitter voltage (VE) of transistor Q1 equal to , C2, C6=33 pF 0402 Chip Capacitor C3, C5=0.01 uF 0402 Chip Capacitor C4=1 uF 0805 Chip Agilent Technologies
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ATF-58143 equivalent transistor C5001 c815 transistor transistor c815 ATF581433 transistor C633 5988-9554EN MTT-28 AN-1281 ATF-54143 AN-1222
Abstract: stabilised, and therefore Ids and Vds are also kept stable. Transistor Q1 is configured with its base and , is high. Thus by forcing the emitter voltage (VE) of transistor Q1 equal to Vds, this circuit , -1dB) and output third order intercept point (OPI3). The non-linear transistor model used in the simulation , . To properly model the exceptionally high linearity of the E-PHEMT transistor at high bias, a better , =6.8 pF 0402 Chip Capacitor C2, C6=33 pF 0402 Chip Capacitor C3, C5=0.01 uF 0402 Chip Avago Technologies
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AV02-0913EN surface mount transistor c633 SOT-343 AMA A LL1005-FH2N2S fet curtice nonlinear model fet curtice 900MH ATF54143 5989-9554EN
Abstract: Integrated Circuit IGBT Insulated-Gate Bipolar Transistor IM Induction Motor IPM Integrated , turn-on time, some dead time must be inserted between the time one transistor of the half-bridge is , voltage-controlled transistor. It is designed for high-frequency operation and has a low-voltage drop, so it has low power losses. An Insulated-Gate Bipolar Transistor (IGBT) is controlled by a MOSFET on its base. The Freescale Semiconductor
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equivalent of transistor c5027 equivalent transistor D5023 D5023 C5027 d3000 mosfet C5027 r 56F8013 56800E DRM077
Abstract: vice versa. Some dead time must be inserted between the time one transistor of the half-bridge is , Power MOSFETs and IGBTs. A Power MOSFET is a voltage-controlled transistor. It is designed for , Transistor (IGBT) is controlled by a MOSFET on its base. A built-in temperature monitor and overtemperature Freescale Semiconductor
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C5027 r transistor mosfet C6017 Transformer ei33 NEC2501 C5027 transistor equivalent of transistor c6017 DRM075
Abstract: : ADDED BC846BM NPN TRANSISTOR (APN 372S0129) TO MCP T-DIODE SENSOR CIRCUIT SIMILAR TO - CORRECTED BOM -
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ISL6259 transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 ISL10