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CDCLVC1102 Texas Instruments LOW SKEW CLOCK DRIVER, PDSO8, TSSOP-8 visit Texas Instruments
SN74AC11032N Texas Instruments AC SERIES, QUAD 2-INPUT OR GATE, PDIP16 visit Texas Instruments
CC110LRTKR Texas Instruments TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC20, 4 X 4 MM, GREEN, PLASTIC, VQFN-20 visit Texas Instruments
CC110LRTKT Texas Instruments IC TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC20, 4 X 4 MM, GREEN, PLASTIC, VQFN-20, Cellular Telephone Circuit visit Texas Instruments
AMC1100DUB Texas Instruments Precision, ±250mV Input, Basic Isolated Amplifier 8-SOP -40 to 105 visit Texas Instruments Buy
SN74AC11004DWR Texas Instruments AC SERIES, HEX 1-INPUT INVERT GATE, PDSO20 visit Texas Instruments

transistor C110

Catalog Datasheet MFG & Type PDF Document Tags

transistor C110

Abstract: Transistor No C110 : Transistor, Normally Open or Normally Closed SUPPLY VOLTAGE HYSTERESIS 2-meter cable, PVC covered 4 , ADJUSTMENT REFERENCE TARGET REFLECTOR DISTANCE POLARIZED FILTER MODEL NUMBER(S) OUTPUT: Transistor , . Sensing Range Movement Characteristics GLV12-54 Reflectors H85 C110-2 H60 H160 50 Offset Y , Distance X [m] Excess Gain vs. Sensing Range Offset Y [mm] Reflectors H85 C110-2 H60 H160 , 0 1.4 1.6 Reflectors H85 C110-2 H60 H160 GLV12-6 90 80 70 60 50 40 30 20
Pepperl+Fuchs
Original
GLV12 transistor C110 Transistor No C110 led receiver TRANSISTOR Y 330 H160 GLV12-8-200/36/40 GLV12-8-200/37/40 10-30VDC G12/GV12 BF5-30

RL28-55

Abstract: transistor C110 RL28-55/82b/105/. Reflection light beam switch with polarisation filter RL28-55/82b/105/. with 5-pin, M12 x 1 plastic connector U ® K Detection range up to 16 m K PNP and NPN transistor , 120 100 80 60 40 20 0 0 5 10 15 H85 C110-2 H60 H160 F2000 y x 20 , mm) 50 mm C110_2 (ø = 84 mm) 50 mm H60 (60 mm x 40 mm) 50 mm F2000 (Foil, 100 mm x , Stability control > 3 1000 Stability control < 3 H85 C110-2 H60 H160 F2000 100 10 3 x
Pepperl+Fuchs
Original
RL28-55 C110 RL28-55/82 C110-2

G3N60B3

Abstract: Transistor No C110 have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor , °C. .'c25 7.0 A AtTc = 110°C. .>C110 3.5 A Collector , Collector to Emitter Saturation Voltage vce(sat) 'c = 'c110. VGE = 15V Tc = 25°C - 1.8 2.1 V Tc = 150 , - V On-State Gate Charge Qg(ON) 'c = 'c110. vCE = 0.5 BVces VGE = 15V - 18 22 nC VGE = 20V - 21 25 nC Current Turn-On Delay Time td(ON)l IGBT and Diode at Tj = 25°C lCE= 'c110 vCE = 0.8 BVces VGe
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OCR Scan
HGTD3N60B3S HGT1S3N60B3S HGTP3N60B3 G3N60B3 HGTD3N60B3S9A tr c110 TA49192 G3N60B

um0670

Abstract: AN2928 capacitor C110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Improper startup without using diode D104 and capacitor C110 . . . . . . . . . . . . . . . . . . . . 33 Design improvement allowing , capacitor C110 and output bus voltage of 400 V . . . . . . . . . . . . . . . . . . . . . . . 35 Doc ID , D104 STP8NM50FP VOUT = 400 V C110 Input EMI filter C107 Proper startup Allowing 0 , C104 330 k V CC INV R115 47uF 1 220 2 Q102 3 7 / 450 V nF MULT GD C110 4 33 Heatsink
STMicroelectronics
Original
STEVAL-ILL013V1 um0670 AN2928 L6562A L6562A LED um0670 80w N67 FERRITES UM0670

power supply driver led 80W schematic

Abstract: AN2928 V) the transistor is opened and charges C110 and C107. Therefore, it is possible to change the , D104 and capacitor C110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Improper startup without using diode D104 and capacitor C110 . . . . . . . . . . . . . . . . . . . . 32 Design improvement , capacitor C110 and output bus voltage of 400 V . . . . . . . . . . . . . . . . . . . . . . . 34 Doc ID , GND CS D104 STP8NM50FP VOUT = 400 V C110 Input EMI filter C107 Proper startup
STMicroelectronics
Original
power supply driver led 80W schematic l6562A boost pfc led c112 230 VAC L78L33 U101 Diode Zener EVL6562A-TM-80W ID15327

G20N60B3D

Abstract: TA49016 impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state , 'C110. VGE = 15V Tc = 25°C - 1.8 2.0 V Tc = 150°C - 2.1 2.5 V Gate to Emitter Threshold Voltage , 600V 30 A Gate to Emitter Plateau Voltage vgep 'c = 'c110. vce = 0-5 BVCEs - 8.0 - V On-State Gate Charge qg(ON) 'c = 'C110. VCE = 0.5 BVces VGE=15V - 80 105 nC Vqe = 20V - 105 135 nC Current Turn-On Delay Time ^d(ON)l Tc = 150°C, 'ce = >c110 vCE = 0.8 BVces, Vge = 15V Rg = 10£i, L = 100nH - 25 - ns
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OCR Scan
HGTG20N60B3D RHRP3060 TA49016 G20N60B3D G20N60B3 LD26 IS09000

G12N60b3

Abstract: G12N60B impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state , VGEP 'C = >C110. VCE = 0 5 bvCES - 7.3 - V On-State Gate Charge Qg(ON) 'c = >C110. VCE = 0.5 BVCES , = 25°C 'CE = >C110 VCE = 0.8 BVCES Vge = 15V RG = 25Q L = 1 mH Test Circuit (Figure 17) - 26 - ns , UNITS Current Turn-On Delay Time td(ON)l IGBT and Diode at Tj = 150°C 'CE = >C110 VCE = 0.8 BVces Vge
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OCR Scan
HGTP12N60B3 HGT1S12N60B3S HGT1S12N60B3S9A TB334 G12N60b3 G12N60B Bipolar HJ G12N60 TA49171 G12N60B3

2N6261

Abstract: MEDIUM VOLTAGE CH IP N UM BER [ ^ © » © T ©ATTM.©' -Jiolitron Devices. Inc NPN SINGLE DIFFUSED MESA TRANSISTOR (FORMERLY 06) CONTACT METALLIZATION B ase, Emitter a n d Collector Solder C o ated 95/5% le ad /tin . ASSEMBLY RECOMMENDATIONS It is ad v isa b le that: a) th e chip b e a ssem b led in a reducing g a s atm osphere. .HO" (2.79mm) b) passiv atio n b e perform ed with a su , rate d to 25W (40V. 0.625A for 1 sec.) 2N6260, 2N6261. 2N6263 C-110 vBE(sat) -
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OCR Scan
2N3054 2N3441

transistor C110

Abstract: 2sc4137 Transistors 2SC4137 2SC4774 / 2SC4713K I High-gain Amplifier Transistor · A b so lu te maximum ratings (Ta= 25'C ) Parameter C ollector-base voltage Coilector-emitter voltage Emitter-base voltage Sym b ol VcBO VCEO V ebd Ic Pc Tj Tstfl Limits 25 20 6 Unit V V V m A (D C ) m A (Pu lse , £»"1QV , Ie = - 10 m A , f*=100M htz V c b = 1 0 V , Ie =* 0 A , f = 1 M H z hPE fr Cob (96-718-C110} I High-frequency Amplifier Transistor, RF Switching »Absolute maximum ratings (Ta=®25` C
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OCR Scan
96-718-C110

cctv camera circuit diagram

Abstract: transistor digital C103 (15V) C111 C103 C110 VO3 (5V) C102 C109 C101 RBO VO1 (3.3V) C105 C108 , Component Description Type Value Composite type with a PNP transistor and schottky barrier , TANTALUM CAPACITOR 10uF/10V C110 Load capacitor for VHO TANTALUM CAPACITOR 10uF/20V C107
ADTech
Original
ADT7210 cctv camera circuit diagram transistor digital C103 transistor c111 c103 TRANSISTOR C111 transistor ccd cctv camera circuit diagram 28MLF
Abstract: 8368602 SOLITRON DEVICES INC 95D 02901 D -f - J J - Ô J ~TS DE (ö3t.öb05 Q0Ö2T01 b MEDIUM VOLTAGE C H IP IM U M BER ^ÆEÊSroeu Devices, Inc. N PN SINGLE DIFFUSED MESA TRANSISTOR (FORMERLY 06) CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin. ASSEMBLY RECOMMENDATIONS It is advisable that: a) the chip be assembled in a reducing gas atmosphere. b , , 2N3441, 2N6260, 2N6261, 2N6263 IS/B rated to 25W (40V, 0.625A for 1 sec.) C-110 i v -
OCR Scan

B560 transistor

Abstract: WL11-B560 Vss3) Power consumption 30 mA4) Switching outputs Transistor outputs Qp and Qn , Scanning range, max. typical Reflector type Operating range 1 2 PL80A C110 0 . 3.5 m 0
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Original
WL11-B560 PL40A B560 transistor transistor b560 WL11- B560 b560 WL11- PL50A PL30A PL20A

g30n60b3

Abstract: G30N60 transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT , - 3.0 mA Collector to Emitter Saturation Voltage VCE(SAT) 'c = >C110. VGE = 15V Tc = 25°C - 1.45 , Emitter Plateau Voltage VGEP â c = 'C110. VCE = 05 BVCES - 7.2 - V On-State Gate Charge Qg(ON) 'c = >C110. VCE = 0.5 BVces VGE = 15V - 170 190 nC Vge = 20V - 230 250 nC Current Turn-On Delay Time ^d(ON)l IGBT and Diode at Tj = 25°C 'CE = >C110 vCE = 0.8 BVces VGe = 15V RG= 3Q L = 1 mH Test Circuit
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OCR Scan
HGTG30N60B3 TA49170 g30n60b3 G30N60 hgtp30n60b3d MOSFET 600v 60a G30N60B3

c103 TRANSISTOR

Abstract: c103 mosfet TRANSISTOR , R109, Q101 and D106. D106 is a 36V zener diode. It clamps the base voltage of NPN transistor Q101 at , 5V, I OC = 0.4 mA. This current is coupled to the transistor side of the optocoupler and pulls down , 0.047uF R116 499 C113 C110 470uF 4 C107 0.027uF R107 1.00k 2 PS2501L-1H 3 , Bipolar Transistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor , C107 C110 C111 C112 C113 C114 C130 D100 D101 D103 D104 D106 D110 L100 Q100 Q101
National Semiconductor
Original
RD-166 c103 mosfet TRANSISTOR Viper22 application PA2865NL PA2685NL AT-339 c103 TRANSISTOR equivalent LM5021 CSP-9-111C2 CSP-9-111S2

ha13559

Abstract: C103Z HA13559FP Application V SS I R107 Powgood Veti > 1 C110 26 25 24 'r r 23 22 C109 R106 2 , C103, C104 C106 C107.C108 C109 C110 C112 D101 Purpose Power amplifier output stabilization LVI , V to 13.8 V 2. ASO of each output transistor is shown below. Operating locus must be within the ASO. 3. Applies to the PA2 lower side transistor. (Qret) 4. Permitted value at Tc = 100°C. Thermal , voltage is the sum of the upper and lower saturation voltages. 2. The value is output transistor only, not
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OCR Scan
13559FP ha13559 C103Z

RLI-135

Abstract: transistor c114 ). It is built with R14, DZ14, Q1 and C12. Notice that the VCE0 of this transistor must be higher than 80 V. This transistor may also dissipate 0.7 W when input voltage is 250 VAC. The COMP pin , 100nF U2A PC817 C110 10uF/63V 6 R102 680 C111 100nF 8 4 GND Vref VCC , C110 build another low pass filter. The auxiliary secondary winding used in forward mode (refer to , (diode and transistor). This set the level of the COMP pin filter, which set the peak drain current
STMicroelectronics
Original
AN2067 RLI-135 transistor c114 viper 224 VIPER53 transistor c114 diagram VIPer53 Application Note

G30N60

Abstract: TA49053 impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state , 250 HA Tc = 150°C - - 3 mA Collector to Emitter Saturation Voltage vce(sat) 'c = 'C110. VGE , A Gate to Emitter Plateau Voltage vgep 'c = 'c110. vce = 05 bvces - 7.2 - V On-State Gate Charge qg(ON) 'c = >C110. vCE = 0.5 BVces Vqe= 15V - 170 190 nC Vqe = 20V - 230 250 nC Current Turn-On Delay Time ^d(ON)l IGBT and Diode at Tj = 25°C, 'ce = >c110. vce = 0.8 BVces. Vqe = 15V, Rq = 3ÌÌ, L
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OCR Scan
HGTG30N60B3D TA49053 TA49172 G30N60B3D LG 631 LG 631 IC
Abstract: loss of a bipolar transistor. File Number â'¢ 75A, 1200V, T C = 25°C â'¢ 1200V Switching SOA , Current Ic e s VCE(SAT) VGE(TH) iGES VCE = BVC e s !c = >C110. VGE = 15V lc = 250nA, V , 200|iH, = 1200V Gate to Em itter Plateau Voltage VGEP !c = >C110. V CE = 0 5 b v CES On-State Gate Charge QG(ON) 2 hjA.rtmS !C = >C110. Vc e = 0 5 b v c e s HGTG30N120CN , 26 ns - 220 260 ns - 180 240 ns - Ic e = >C110 VC e = 0.8 BV c e s -
OCR Scan
TA49281 TG30N120CN 30N120CN 1-800-4-HARRIS

relay 12v 1c/o

Abstract: 12V 1C/O relay have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor , = 150°C - - 5.0 mA Collector to Emitter Saturation Voltage vce(sat) 'c = >C110 VGE = 15V Tc = 25 , Emitter Plateau Voltage vgep 'ce = 'c110. vce = 0 5 bvces - 8.4 - V On-State Gate Charge qg(ON) lCE= 'c110 VCE = 0.5 BVCES VGE = 15V - 91 110 nC VGE = 20V - 122 145 nC Current Turn-On Delay Time td(ON)l IGBT and Diode at Tj = 25°C 'ce = >c110 VCE = 0.8 BVces Vge = 15V Rg = 10il L - 1mH Test Circuit
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OCR Scan
TA49178 HGTG20N60C3 G20N60C3 HGTP20N60C3 HGT1S20N60C3S HGT1S20N60C3S9A relay 12v 1c/o 12V 1C/O relay N-CHANNEL 45A TO-247 POWER MOSFET G20N60

p12n60c3

Abstract: p12n60 bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150 , Vce = BVces Tc = 150°C - - 1.0 mA Collector to Emitter Saturation Voltage vce(sat) 'c = >C110. VGE = , Charge qg(ON) 'c = >C110. vCE = 0.5 BVces VGE=15V - 48 55 nC Vqe = 20V - 62 71 nC Current Turn-On Delay Time ^d(ON)l Tj = 150°C, 'ce = >C110, VcE(PK) - 0.8 BVces, Vqe = 15V, Rg = 25ÌÌ, L = 100nH -
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OCR Scan
HGTP12N60C3 HGT1S12N60C3S TA49123 S12N60C3 HGT1S12N60C3S9A p12n60c3 p12n60 P12N60C3 T0-220AB
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