NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: standard functionality. The memory can be personalized for either CMOS or Transistor Transistor Logic , process monitor transistors and RAM product using 10 keV X-ray and Co60 radiation sources. Transistor , 19 A=.085 ± .010 B=.008 ± .002 C=.013 ± .004 D=.650 ± .010 E=.025 ± .002 F=.630 ± .007 , 1 B (1) Lead 19 E L A=.137 ± .010 B=.008 ± .002 C=.013 ± .004 D=.650 ± .010 ... | Original |
12 pages, |
182A934 transistor k450 transistor m285 transistor C013 167A690 167A690 abstract |
|
|||
| Abstract: RF142 RF142 Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications The RF142 RF142 Power Amplifier (PA) controller is a highly integrated, monolithic device optimized for use in 900 MHz, 1800 MHz, and 1900 MHz Global System For Mobile Communications (GSM) and other , used to control the transmit power of a dual or multi-band Heterojunction Bipolar Transistor (HBT) PA. , Circuitry CAP- CAP+ VAPC- VAPC+ ENABLE RFPC+ RFPC VCC2 VCC1 GND C013 Figure 2. RF142 RF142 ... | Original |
8 pages, |
RF142 C473 china phone BLOCK diagram mobile rf power amplifier transistor RF Power detector C066 RF Bipolar Transistor Diplexer 900 1800 china mobile phone circuit diagram Logarithmic Amplifier detector rf power cell phone detector c879 transistor RF142 abstract |
|
|||
| Abstract: AT73C202 AT73C202 includes a lowcost battery charger, using a simple external PNP transistor for Li-Ion or , EN-ANA-B D5 C013 GND-REG1 V-BCK EN B5 DC-DC Converter 1.8V/2.5V 300mA G4 , , TYPEA C009, C011, C015 220 nF - X5R 10V/10%, 0603 C008, C013, C016 10 nF - X5R 10V/10%, 0402 , 5.5 V GATE-CHG External Transistor ISINK Sink Current Internal Timer Source (second solution) TON ON Time T Period External Transistor is Closed CHG-IN Input Supply VIN ... | Original |
21 pages, |
vbck equivalent PNP for BUZ 90 buz c005 2740b C005 sot23 pack AT73C202 AT73C202 abstract |
|
|||
| Abstract: RF142 RF142 Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications The RF142 RF142 Power Amplifier (PA) controller is a highly integrated, monolithic device optimized for use in 900 MHz, 1800 MHz, and 1900 MHz Global System For Mobile communications® (GSM®) and other , used to control the transmit power of a dual or multi-band Heterojunction Bipolar Transistor (HBT) PA. , VAPC- VAPC+ ENABLE RFPC+ RFPC VCC2 VCC1 GND C013 Figure 2. RF142 RF142 Block Diagram the ... | Original |
7 pages, |
RF142 C473 Block Diagram of 8253 china mobile phone circuit diagram c879 transistor c879 RF142 abstract |
|
|||
| Abstract: bipolar junction transistor. Instead of a 0.7 V base to emitter voltage, the ATF-54143 ATF-54143 enhancement mode , mode device are very similar to those used to bias a bipolar junction transistor. C7 Vdd R7 , shown in Figure 2. R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2. , Equation (1) calculates the required voltage at the emitter of the PNP transistor based on desired Vds , K=5 Z2=85 Z1=30 C C1 C=0.13 pF GATE Port G Num=1 TLINP TL4 Z=Z1 Ohm L=15 mil K=1 ... | Original |
16 pages, |
transistor datasheet s parameters noise ATF-54143-BLK ATF-54143-TR1 ATF-54143-TR2 ATF-54143 RHO marking SOT c5 87 transistor 4F LNA transistor C013 Curtice PHEMT marking code a ATF-54143 application notes SC-70 ATF-54143 abstract |
|
|||
| Abstract: bipolar junction transistor. Instead of a 0.7 V base to emitter voltage, the ATF-54143 ATF-54143 enhancement mode , mode device are very similar to those used to bias a bipolar junction transistor. C7 Vdd R7 , shown in Figure 2. R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2. , Equation (1) calculates the required voltage at the emitter of the PNP transistor based on desired Vds , K=5 Z2=85 Z1=30 C C1 C=0.13 pF GATE Port G Num=1 TLINP TL4 Z=Z1 Ohm L=15 mil K=1 ... | Original |
16 pages, |
transistor datasheet s parameters noise RHO marking ATF-54143-TR2 ATF-54143-TR1 ATF-54143-BLK ATF-54143 SOT c5 87 PHEMT marking code a Curtice SC-70 ATF-54143 abstract |
|
|||
| Abstract: biasing the typical bipolar junction transistor. Instead of a 0.7V base to emitter voltage, the , mode device are very similar to those used to bias a bipolar junction transistor. C4 C1 Q1 , Figure 2. R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2. The , ) calculates the required voltage at the emitter of the PNP transistor based on desired Vds and Ids through , VAR VAR2 w=800 VAR VAR14 VAR14 Is=0.0*200/W 200/W INSIDE Package Var Egn C C1 C=0.13 pF GATE ... | Original |
17 pages, |
transistor c4 C0159 ATF-54143 application notes ATF-54143 A004R ATF-54143-TR1G ATF-54143 abstract |
|
|||
| Abstract: PHEMT is much like biasing the typical bipolar junction transistor. Instead of a 0.7 V base to emitter , junction transistor. C7 Vdd R7 R3 R2 R1 Figure 2. Typical ATF-54143 ATF-54143 LNA with Active , the base of a PNP transistor at Q2. The constant voltage at the base of Q2 is raised by 0.7 volts , the PNP transistor based on desired Vds and I ds through resistor R4 to be 3.6V. Equation (2 , Model INSIDE Package Var VAR Egn VAR1 K=5 Z2=85 Z1=30 C C1 C=0.13 pF GATE Port G Num=1 ... | Original |
16 pages, |
LNA MARKING 4F ATF-54143-TR2 ATF-54143-TR1 ATF-54143-BLK ATF-54143 5989-0034EN ATF-54143 abstract |
|
|||
| Abstract: PHEMT is much like biasing the typical bipolar junction transistor. Instead of a 0.7 V base to emitter , junction transistor. C7 Vdd R7 R3 R2 R1 Figure 2. Typical ATF-54143 ATF-54143 LNA with Active , the base of a PNP transistor at Q2. The constant voltage at the base of Q2 is raised by 0.7 volts , the PNP transistor based on desired Vds and I ds through resistor R4 to be 3.6V. Equation (2 , Model INSIDE Package Var VAR Egn VAR1 K=5 Z2=85 Z1=30 C C1 C=0.13 pF GATE Port G Num=1 ... | Original |
17 pages, |
zo 107 ATF-54143 ATF-54143-BLK ATF-54143-TR1 ATF-54143-TR2 A004R LNA MARKING 4F PHEMT marking code a SOT c5 87 Curtice ATF-54143 application notes RGS 13/1 SC-70 ATF-54143 abstract |
|
|||
| Abstract: PHEMT is much like biasing the typical bipolar junction transistor. Instead of a 0.7 V base to emitter , junction transistor. C7 Vdd R7 R3 R2 R1 Figure 2. Typical ATF-54143 ATF-54143 LNA with Active , the base of a PNP transistor at Q2. The constant voltage at the base of Q2 is raised by 0.7 volts , the PNP transistor based on desired Vds and Ids through resistor R4 to be 3.6V. Equation (2 , Model INSIDE Package Var VAR Egn VAR1 K=5 Z2=85 Z1=30 C C1 C=0.13 pF GATE Port G Num=1 ... | Original |
16 pages, |
transistor 4F LNA Curtice ATF-54143-TR2 ATF-54143-TR1 ATF-54143-BLK ATF-54143 SC-70 ATF-54143 abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| , supporting both Super-Twisted Nematic (STN) and Thin-Film Transistors (TFT) displays. - Dedicated DMA www.datasheetarchive.com/download/36331940-595893ZC/ird.cd.contents.zip (user.manual.lpc24xx.pdf) |
NXP | 23/10/2012 | 35869.34 Kb | ZIP | ird.cd.contents.zip |