NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: KTC 2240 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) (applications ) â- Low Noise Audio Amplifier Applications. ( features ) The KTC2240 KTC2240 is a transistor for low frequency and low noise , Voltage : VCEO=120V â- MAXIMUM RATINGS (Ta = 25°C) Unit in mm 1. EMITTER 2. COLLECTOR 3. BASE JEDEC , Dissipation Pc 300 mW Emitter-Base Voltage Vebo 5 V Junction Temperature T, 125 °C Collector Current Ic 100 mA Storage Temperature Range Tstg -55-125 r â- ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC ... | OCR Scan |
1 pages, |
2240 BL KTc2240 transistor KTC2240 transistor C 2240 BL transistor C 2240 KTC2240 abstract |
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| Abstract: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 , z L o w N o i s e A m p l i fi e r ( L N A ) Application R F & P r o t e c ti o n D e v i c e s , Note No. 153 Infineon's BFP650F BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise 1 Infineon's BFP650F BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Amplifier (LNA) Application Applications , Transistor in TSFP-4 package is shown in a high-linearity 2.4 GHz LNA design. Amplifier draws 19.7 mA from ... | Original |
18 pages, |
transistor cross reference chart transistor 20 dB 2400 mhz low power rf transistor T INFINEON schematic diagram amplifier TRANSISTOR 12 GHZ RF TRANSISTOR BFP650F transistor mw 131 transistor C 2240 datasheet abstract |
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| Abstract: Ultra Low Noise SiGe:C RF Transistor as 2110 - 2170 MHz UMTS 1 BFR740L3 BFR740L3 Ultra Low Noise SiGe:C RF , Overview · · · · · · Infineon BFR740L3 BFR740L3 Ultra Low Noise SiGe:C Transistor in reduced-height , No. 116 BFR740L3 BFR740L3 Ultra Low Noise SiGe:C RF Transistor as 2110 - 2170 MHz UMTS Schematic Diagram , Rev. 1.2, 2007-08-30 Application Note No. 116 BFR740L3 BFR740L3 Ultra Low Noise SiGe:C RF Transistor as , No. 116 BFR740L3 BFR740L3 Ultra Low Noise SiGe:C RF Transistor as 2110 - 2170 MHz UMTS Noise Figure, Plot ... | Original |
20 pages, |
UMTS transistor transistor C 2240 transistor 1740 SiGe PNP BFR740L3 2110 transistor transistor t 2190 datasheet abstract |
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| Abstract: 38232 D M.CRO-T (continued) MMT3g6()A_NpN T-3/-/7 RF AND HIGH-SPEED SWITCHING TRANSISTOR • designed , Dissipation @ TA = 25°C Derate above 25°C Pd 250 2.0 mW mW/°C Operating and Storage Junction Temperature Range TlTstg -55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient ^eja 0.50 °C/mW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , , lE = 0, f = 140 kHz - 1.3 2.0 pF c* VBE = 0.5 Vdc, lc = 0, f = 140 kHz - 1.2 3.0 pF Pin 1. Base 2. ... | OCR Scan |
2 pages, |
transistor C 2240 MMT3960 datasheet abstract |
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| Abstract: =z -z-= = =- * =s .- -a a-= = = an AMP company RF MOSFET Power Transistor , Broadband Linear Operation 500`tiHz to 1200 MHz Absolute Maximum Ratings at 25°C F 6.22 6048 , 642 572 at 25°C Output Capacitance Cass 10 pF V,=28.0 V, F=l .OMHz Reverse , RF MOSFET Power Transistor, IOW, 28V LF281 LF281 OA v2.w Typical Broadband Performance , ) 300 020 RF MOSFET Power Transistor, lOW, 28V LF281 LF281 OA V2.00 Typical Device Impedance ... | Original |
3 pages, |
transistor v2w transistor C 2240 datasheet abstract |
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| Abstract: AKTIEN6ESELLSCHAF This component, a transistor with integrated base emitter resistance and a Z diode, in TO 236 , current k 100 mA Base current h 10 mA Storage temperature range Tstg -55 to+125 °C Junction temperature Ti 115 °C Total power dissipation (Tamt, S 45 °C) Ptot 150 mW Thermal resistance Junction to , HSIEG 25C 0487 8 - SIEMENS AKTIENGESELLSCHAF- BZW20 BZW20 Static characteristics (ramb = 25 °C) Collector cutoff current (VCE = 20V) (VcE = 20V;Tamb= 125°C) Collector-emitter breakdown voltage (/c = 100nA) DC ... | OCR Scan |
3 pages, |
Q62702-Z1387 BZW20 DIODE BZW20 Q0Q4677 Q0Q4677 abstract |
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| Abstract: THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATIONS. ISOTOP , forward current (tp = 5 u s, f = 5kHz) 900 A Max operating junction temperature 150 °C -65 to 150 °C IFRM Tj Tstg Storage temperature (*) : Tin plaste d Fast-on version is , 0.85 °C/W Total 0.48 0.1 IF(AV) = 45A =0.5 Per diode Tc= 70°C 94 W Total power , Value Coupling Rth(j-c) Parameter Conditions Per diode Tc= 62°C 104 W Junction ... | Original |
7 pages, |
smps 45 watts mosfet 1200V 40A STTA9012T STTA9012T abstract |
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| Abstract: THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATIONS. ISOTOP , forward current (tp = 5 u s, f = 5kHz) 300 A Max operating junction temperature 150 °C -65 to 150 °C IFRM Tj Tstg Storage temperature (*) : Tin plaste d Fast-on version is , 1.4 °C/W Total 0.75 0.1 IF(AV) = 25A =0.5 Per diode Tc= 70°C 57 W Total power , Value Coupling Rth(j-c) Parameter Conditions Per diode Tc= 62°C 62.5 W Junction ... | Original |
7 pages, |
transistor C 2240 STTA5012T STTA5012T abstract |
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| Abstract: Â40°C to +125°C Â40°C to +125°C Small Outline Transistor (SOT-143) Small Outline Transistor , Â40°C to +125°C Â40°C to +125°C Small Outline Transistor (SOT-143) Small Outline Transistor , Â40°C to +125°C Â40°C to +125°C Small Outline Transistor (SOT-143) Small Outline Transistor , Â40°C to +125°C Â40°C to +125°C Small Outline Transistor (SOT-143) Small Outline Transistor , Â40°C to +125°C Â40°C to +125°C Small Outline Transistor (SOT-143) Small Outline Transistor ... | Original |
8 pages, |
ADM6315 ADM6315-31D1ART-RL ADM6315-31D1ART-RL7 ADM6315-44D1ART-RL ADM6315-44D1ART-RL7 ADM6315-45D1ART-RL ADM6315-45D1ART-RL7 ADM6315-46D1ART-RL ADM6315-46D1ART-RL7 ADM811 SOT-143 ADM6315 abstract |
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| Abstract: IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. ISOTOP ® (Plastic , , f = 5kHz) 300 A Max operating junction temperature. -65 to 150 °C Storage temperature. -65 to 150 °C IFRM Tj Tstg (*) : Tin plated Fast-on version is also available , 1993 Ed : 2A 1/8 STTA6006T STTA6006T(V)1/2 THERMAL AND POWER DATA Symbol Per diode 1.4 °C/W Total 0.75 0.1 Per diode IF(AV) = 30A =0.5 Tc= 74°C 54 W Total power dissipation ... | Original |
8 pages, |
MOSFET 1200v 30a STTA6006T STTA6006T abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| supply voltage of +2.7VDC to +5VDC, a temperature range of -20°C to +60°C, input-power levels -stage PA constructed from discrete power transistors and passive elements or, more recently specific needs of the Bluetooth market. The MAX2240 PA IC eliminates the major disadvantages power in the highest power mode at V CC at +3VDC. The MAX2240 uses a new simplified block diagram represents the MAX2240 low-cost Bluetooth PA. In addition www.datasheetarchive.com/files/maxim/0012/view_044.htm |
Maxim | 04/04/2001 | 34.92 Kb | HTM | view_044.htm |
| for the MAX2240 Additional Information: Quick View Data Sheet for the MAX2264 MAX2264 MAX2264 MAX2264 +24.0 C 16-Pin +24.0 C 16-Pin +30.3 C 20-Pin .0 AB/C 8-Pin PSOPII www.datasheetarchive.com/files/maxim/0003/appno023.htm |
Maxim | 04/04/2001 | 28.83 Kb | HTM | appno023.htm |
| ! Infineon Technologies Discrete & RF Semiconductors ! BFR92T BFR92T BFR92T BFR92T ! Si NPN RF Bipolar Junction Transistor in SC75 ! VCE = 2 V IC = 15 mA ! Common Emitter S .7 0.2240 -49.8 1.800 0.4424 157.4 2.180 58.3 0.1519 62.5 0.2213 -52.4 1.900 0 .6 0.2191 -70.1 2.800 0.4733 142.4 1.477 40.3 0.2240 57.3 0.2216 -74.8 3.000 0 .5195 96.7 0.818 0.8 0.4457 34.6 0.3251 -134.5 ! ! (c) 1999 Infineon Technologies AG, Munich www.datasheetarchive.com/download/71093464-777349ZC/bfr92t.zip (T02V015M.S2P) |
Spice Models | 29/07/2012 | 273.09 Kb | ZIP | bfr92t.zip |
| ! Infineon Technologies Discrete & RF Semiconductors ! BFR183T BFR183T BFR183T BFR183T ! Si NPN RF Bipolar Junction Transistor in SC75 ! VCE = 2 V IC = 10 mA ! Common Emitter S .3 0.2692 -48.3 2.200 0.5138 155.5 2.240 56.9 0.1424 63.3 0.2662 -51.2 2.400 0 .5354 143.2 1.702 44.0 0.1915 62.0 0.2679 -64.7 3.500 0.5380 136.1 1.491 36.4 0.2240 60 .800 2.10 0.34 -170 0.14 ! ! (c) 1999 Infineon Technologies AG, Munich www.datasheetarchive.com/download/77155930-777340ZC/bfr183t.zip (T52V010M.S2P) |
Spice Models | 29/07/2012 | 273 Kb | ZIP | bfr183t.zip |
| # GHZ S MA R 50 ! BFQ81 BFQ81 BFQ81 BFQ81, Si-NPN RF-Transistor in SOT23 package ! Vc = 10V, I c = 20mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .1 .628097 -52.67 26.24071 137.10 .017901 68.45 .799562 -19.36 .15 .517468 -70.30 21.26583 124.66 .023334 65.08 .705089 -22.15 .2 .435473 -84.06 17.51066 116.03 .027777 64.32 .638866 -22.70 .25 .376057 -95.15 14.71444 109.84 .031780 64.79 .594807 -22.40 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq81/ra10v20m.s2p |
Siemens | 02/07/1993 | 2.04 Kb | S2P | ra10v20m.s2p |
| ! BFQ645 BFQ645 BFQ645 BFQ645 Si-NPN RF-Transistor in CEREC package ! V ce = 5V I c = 2mA # GHZ S MA R 50 .06 .922443 -8.62 6.868847 173.85 .009943 85.67 .992446 -3.48 .08 .920256 -11.53 6.845057 171.83 .013204 83.98 .990665 -4.65 .1 .916872 -14.23 6.815602 169.62 .016515 81.97 .988142 -5.80 .15 .909119 -21.35 6.758902 164.65 .024382 78.04 .978882 -8.60 .2 .897979 -28.09 6 .6 .614168 166.75 1.906253 47.96 .099148 22.40 .543433 -64.47 2.8 .618566 160.93 1.829917 42 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq645/ab5v02m0.s2p |
Siemens | 02/07/1993 | 2.08 Kb | S2P | ab5v02m0.s2p |
| ! Infineon Technologies Discrete & RF Semiconductors ! BF517 BF517 BF517 BF517 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 1.5 V IC = 0.5 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz .6191 134.8 0.514 24.4 0.1903 53.6 0.6739 -86.6 2.600 0.6286 126.8 0.492 22.9 0.2240 56 .6419 113.3 0.459 22.4 0.3035 55.9 0.6458 -111.5 ! ! (c) 1999 Infineon Technologies AG, Munich www.datasheetarchive.com/download/57679045-777287ZC/bf517.zip (GB1V5M50.S2P) |
Spice Models | 29/07/2012 | 357.65 Kb | ZIP | bf517.zip |
| ! Infineon Technologies Discrete & RF Semiconductors ! BF517 BF517 BF517 BF517 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 4 V IC = 2 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz .4804 -141.6 2.506 86.0 0.0936 43.2 0.6663 -27.3 0.800 0.4674 -151.7 2.240 80.2 0.0967 44 .5743 108.9 0.724 16.2 0.3186 60.8 0.5825 -88.4 ! ! (c) 1999 Infineon Technologies AG, Munich www.datasheetarchive.com/download/57679045-777287ZC/bf517.zip (GB4V02M0.S2P) |
Spice Models | 29/07/2012 | 357.65 Kb | ZIP | bf517.zip |
| ! Infineon Technologies Discrete & RF Semiconductors ! BF517 BF517 BF517 BF517 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 0.5 V IC = 10 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz .5770 144.6 0.801 40.0 0.2092 56.0 0.1370 -115.6 1.400 0.5883 141.6 0.763 37.4 0.2240 55 .6547 99.5 0.523 15.7 0.4361 34.5 0.2811 171.5 ! ! (c) 1999 Infineon Technologies AG, Munich www.datasheetarchive.com/download/57679045-777287ZC/bf517.zip (GBV5010M.S2P) |
Spice Models | 29/07/2012 | 357.65 Kb | ZIP | bf517.zip |
| ! Infineon Technologies Discrete & RF Semiconductors ! BF770A BF770A BF770A BF770A ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 1 V IC = 12 mA ! Common Emitter S-Parameters: October 1995 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz .4924 148.7 1.973 53.9 0.2098 56.0 0.1260 -135.3 1.400 0.4935 145.6 1.851 51.0 0.2240 55 .5720 106.5 1.042 14.0 0.4202 33.9 0.2275 172.1 ! ! (c) 1999 Infineon Technologies AG, Munich www.datasheetarchive.com/download/26775098-777289ZC/bf770a.zip (G21V012M.S2P) |
Spice Models | 29/07/2012 | 238.93 Kb | ZIP | bf770a.zip |