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Part : TRANSISTOR KIT Supplier : Jameco Manufacturer : Jameco Electronics Stock : 20 Best Price : $59.95 Price Each : $69.95
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transistor BDV95

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDV91/93 , 45V(Min)- BDV91; 60V(Min)- BDV93 80V(Min)- BDV95 ·Complement to Type BDV92/94/96 APPLICATIONS , BDV93 80 BDV95 VCEO BDV93 BDV91 Collector-Emitter Voltage 60 BDV95 VCER , Websitewww.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor , UNIT 60 IC= 100mA ;IB=0 BDV95 V 80 100 VCE(sat)-1 Collector-Emitter Saturation INCHANGE Semiconductor
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BDV91/93/95
Abstract: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following , Development please contact your nearest Sales Office 7 BIPOLAR TRANSISTOR INDUSTRY STANDARD , 2N3716 2N5629 BIPOLAR TRANSISTOR INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST , Office 9 BIPOLAR TRANSISTOR INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PREFERRED -
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BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1320 NPN Silicon Power Transistor Switchmode Series This transistor is designed for high­voltage, power switching in inductive circuits where RBSOA and , Saturation Voltages Leakage Currents MAXIMUM RATINGS Designer's TM Data Sheet POWER TRANSISTOR 2 , are given to facilitate "worst case" design. 3­620 Motorola Bipolar Power Transistor Device Data , Transistor Device Data 3­621 MJE1320 TYPICAL STATIC CHARACTERISTICS VCE , COLLECTOR­EMITTER VOLTAGE Motorola
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2N3055 equivalent transistor NUMBER MJE350 equivalent bd139 equivalent transistor 2n6284 equivalent TIP152 equivalent MJE371 equivalent 220AB MJ15012 MJE15030 2N6339 2N6341 2N6497
Abstract: Power Transistor for Electronic Light Ballast and Switching Power Supply Applications The MJE/MJF18206 , Power Transistor Device Data 3­769 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ , Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ , us ns Crossover Time 600 1100 800 MJE18206 MJF18206 Motorola Bipolar Power Transistor Device , . Collector­Emitter Saturation Voltage 3­772 Motorola Bipolar Power Transistor Device Data MJE18206 MJF18206 Motorola
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BD127 electronic ballast MJE13005 2SD630 BD388 transistor bd4202 BD138 coil MJ15011 MJ15016 BU208A MJE16106 MJ16012 MJ10009
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor Switchmode Bridge Series , (sus) - 400 V Collector­Emitter Breakdown - V(BR)CES - 650 V State­of­Art Bipolar Power Transistor , " design. REV 1 3­696 Motorola Bipolar Power Transistor Device Data , 300 us, Duty Cycle 2.0%. Motorola Bipolar Power Transistor Device Data 3­697 MJE16106 , VOLTAGE (VOLTS) Figure 5. Capacitance 3­698 Motorola Bipolar Power Transistor Device Data Motorola
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motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE transistor bd610 pin configuration transistor bd140 TIP101 TIP102 TIP106 TIP107 TIP31C TIP32C
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bipolar Power PNP Low Dropout Regulator Transistor The , PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS THERMAL CHARACTERISTICS Thermal Resistance - , Vdc uAdc Symbol Min Typ Max Unit 3­616 Motorola Bipolar Power Transistor Device Data MJE1123 , . Base­Emitter Saturation Voltage versus Temperature 3­617 Motorola Bipolar Power Transistor Device Data , Current Gain Variation TYPICAL LOW PASS TRANSISTOR APPLICATION The MJE1123 was designed to operate as Motorola
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TIP42C as regulator BU108 NSP2100 MOTOROLA MJ15024 MJE340 REGULATOR MJE2482 TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
Abstract: Transistor Device Data 3­895 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ , Motorola Bipolar Power Transistor Device Data TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 r(t , transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be , Motorola Bipolar Power Transistor Device Data 3­897 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 NPN Motorola
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C 3883 2N6254 REPLACEMENT TIP116 TEXAS MOTOROLA TIP115 transistor BU326 bu180 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor High Voltage SWITCHMODE , BUL45F Unit Vdc Vdc Vdc Adc Adc Volts POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS BUL45 , Motorola Bipolar Power Transistor Device Data BUL45 BUL45F ELECTRICAL CHARACTERISTICS - continued (TC , Transistor Device Data 3­317 BUL45 BUL45F TYPICAL STATIC CHARACTERISTICS 100 TJ = 25°C TJ = 125 , Power Transistor Device Data BUL45 BUL45F TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all Motorola
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transistor tip120 motorola AN485 MJE802 MOTOROLA motorola MJ480 BUW34 MOTOROLA BUX98A E69369 TIP75B TIP75C 2N6488 2N6490 2N6491
Abstract: Transistor with Base-Emitter Speedup Diode The MJ10009 Darlington transistor is designed for high­voltage , value. REV 2 Motorola Bipolar Power Transistor Device Data 3­451 , Motorola Bipolar Power Transistor Device Data MJ10009 TYPICAL CHARACTERISTICS 400 TJ = 150°C hFE, DC , 5. Collector Cutoff Region Figure 6. Output Capacitance Motorola Bipolar Power Transistor , 3­454 Motorola Bipolar Power Transistor Device Data MJ10009 TYPICAL CHARACTERISTICS SWITCHING Motorola
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D45H11 equivalent replacement 2N5036 equivalent MJ3001 equivalent MJ10016 Driver with MJE13003 2SB557 equivalent 204AA MJE13005 TIPL752 TIPL752A TIPL753 TIPL753A
Abstract: (sus) - 400 V Collector­Emitter Breakdown - V(BR)CES - 650 V State­of­Art Bipolar Power Transistor , for future use and best overall value. REV 1 Motorola Bipolar Power Transistor Device Data , ) Pulse Test: Pulse Width = 300 us, Duty Cycle 2%. 3­530 Motorola Bipolar Power Transistor Device , Figure 5. Capacitance Motorola Bipolar Power Transistor Device Data 3­531 MJ16110 MJW16110 , Bipolar Power Transistor Device Data MJ16110 MJW16110 Table 1. Inductive Load Switching Drive Circuit Motorola
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MJ802 EQUIVALENT MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent MJ15025* equivalent ST T8 3580 TIPL755 TIPL755A TIPL760 TIPL760A MJ16010 MJE16002
Abstract: 3­194 Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Transistor Device Data 3­195 BD787 BD788 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 , (PNP) 60 V There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater Motorola
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IR642 IR3001 2N6410 2SD375 2SC931 BD411-8 225AA
Abstract: Derating REV 7 3­208 Motorola Bipolar Power Transistor Device Data , Vdc Vdc Motorola Bipolar Power Transistor Device Data 3­209 BDV65B BDV64B NPN 10K VCE = 4 , There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation Motorola
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BDV65B equivalent buv48 equivalent tip127 pin details 2SD424 BDX54 BU100
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic NPN Silicon High-Voltage Power Transistor . . , must be observed. REV 3 Motorola Bipolar Power Transistor Device Data 3­63 , There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C ­ V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater Motorola
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2N5657 equivalent 2N3792 application notes 2SA1046 2SC2331 Y tip47 419 2N5655 2N5656 2N5657
Abstract: future use and best overall value. 3­2 Motorola Bipolar Power Transistor Device Data , 500 us 250 us dc 1 ms There are two limitations on the power handling ability of a transistor , the transistor that must be observed for reliable operation; i.e., the transistor must not be , Area Motorola Bipolar Power Transistor Device Data 3­3 2N3055 MJ2955 NPN 2N3055 500 300 200 , 3­4 Motorola Bipolar Power Transistor Device Data CASE 221D Isolated TO­220 Type UL Recognized Motorola
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texas 2n3055 MJ2955 replacement 2N5655 equivalent 2N3792 2n3055 replacement 2n3055 MJ15003
Abstract: Saturation Voltage - VCE(sat) = 0.8 Vdc @ IC = 1.0 Adc MAXIMUM RATINGS MJ410 5 AMPERE POWER TRANSISTOR , Power Transistor Device Data 3­417 MJ410 10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 0.2 0.1 , °C 5.0 ms 1.0 ms 500 us There are two limitations on the power handling ability of a transistor , the transistor that must be observed for reliable operation; i.e., the transistor must not be , Load Line Figure 5. Sustaining Voltage Test Circuit 3­418 Motorola Bipolar Power Transistor Motorola
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TIP36 BD413 2SC331 BD139.6 BD139.16 BD139.10
Abstract: * MJF18006 * *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply , TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ , Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ , 2.15 2.75 200 310 us ns Crossover Time 300 - Motorola Bipolar Power Transistor Device Data , Bipolar Power Transistor Device Data MJE18006 MJF18006 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 Motorola
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2SD436 mje15033 replacement 3140 BD MJE340 MOTOROLA VCC 3802 MJE/MJF18006
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor 1 kV SWITCHMODE Series , value. REV 3 3­830 Motorola Bipolar Power Transistor Device Data , %. Motorola Bipolar Power Transistor Device Data 3­831 MJH16006A TYPICAL STATIC CHARACTERISTICS VCE , . Capacitance 3­832 Motorola Bipolar Power Transistor Device Data MJH16006A TYPICAL INDUCTIVE , Transistor Device Data 3­833 MJH16006A Table 1. Inductive Load Switching Drive Circuit +15 1 uF 150 Motorola
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2SC495 mje13007 equivalent 2sd880 equivalent 2N3773 equivalent pin configuration NPN transistor tip41c BDX37 equivalent
Abstract: for future use and best overall value. REV 3 Motorola Bipolar Power Transistor Device Data , Cycle 2%. 3­848 Motorola Bipolar Power Transistor Device Data MJW16010A TYPICAL STATIC , °C Figure 5. Capacitance Motorola Bipolar Power Transistor Device Data 3­849 MJW16010A TYPICAL , Figure 11. Crossover Time Motorola Bipolar Power Transistor Device Data MJW16010A Table 1. Inductive , Motorola Bipolar Power Transistor Device Data 3­851 MJW16010A GUARANTEED OPERATING AREA INFORMATION Motorola
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BD907 equivalent Motorola transistors MJE3055 TO 127 Drive IC 2SC3346 transistor equivalent book 2sc2238 mje340 equivalent transistor 2sd313
Abstract: Test: Pulse Width = 5.0 ms, Duty Cycle 10%. REV 2 Motorola Bipolar Power Transistor Device , ) Pulse Test: Pulse Width = 300 us, Duty Cycle 2.0%. 3­856 Motorola Bipolar Power Transistor Device , Bipolar Power Transistor Device Data 3­857 MJW16206 SAFE OPERATING AREA INFORMATION 30 20 IC , limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must be observed for Motorola
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2SC123 sec tip41c sec tip42c TRANSISTOR tip41c pin out image TRANSISTOR BC 327 transistors BC 458 pnp MJF16206
Abstract: , High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18004D2 is state­of­art High Speed High gain BIPolar transistor (H2BIP). High , characteristics - are given to facilitate "worst case" design. 3­724 Motorola Bipolar Power Transistor , Adc IB1 = 0 0.4 4A VCC = 300 V 1.4 8 MJE18004D2 Motorola Bipolar Power Transistor Device Data , Bipolar Power Transistor Device Data MJE18004D2 TYPICAL STATIC CHARACTERISTICS 100 VCE = 1 V hFE Motorola
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2SC1943 bd135 TRANSISTOR REPLACEMENT GUIDE TRANSISTOR 2sb546 BD581 c 3198 transistor transistor Electronic ballast mje13007
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