500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

transistor BD139

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR BD139

Abstract: smd transistor L6 T1 NPN transistor BD139 4132 020 36640 Notes 1. American Technical Ceramics type 100A or , DISCRETE SEMICONDUCTORS DATA SHEET BLT70 UHF power transistor Product specification File , UHF power transistor BLT70 FEATURES · Very high efficiency · Low supply voltage. 4 , the 900 MHz communication band. c b DESCRIPTION e NPN silicon planar epitaxial transistor , Semiconductors Product specification UHF power transistor BLT70 LIMITING VALUES In accordance with
Philips Semiconductors
Original
TRANSISTOR BD139 smd transistor L6 philips power transistor bd139 bd139 application note UHF TRANSISTOR bd139 smd MAM043 MSA035

smd transistor pnp 591

Abstract: smd transistor xf 734 23308 P1 potentiometer 2 WD. T1 NPN transistor BD139 9330 912 20112 T2 double PNP , Philips Semiconductors Product specification UHF linear push-pull power transistor BLV857 , ) in the 470 to 860 MHz frequency band. DESCRIPTION NPN silicon planar transistor with two sections , specification UHF linear push-pull power transistor BLV857 LIMITING VALUES In accordance with the Absolute , Respective Manufacturer Philips Semiconductors Product specification UHF linear push-pull power transistor
-
OCR Scan
smd transistor pnp 591 smd transistor xf philips 2322 734 philips SMD resistor 805 smd transistor 912 smd L17 npn

2222 031 capacitor philips

Abstract: transistor bd139 transistor BD139 9330 912 20112 Notes 1. American Technical Ceramics type 100A or capacitor of same , DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLV862 UHF linear push-pull power transistor , specification UHF linear push-pull power transistor BLV862 PINNING FEATURES · Double stage internal , silicon planar epitaxial transistor with two sections in push-pull configuration. The device is , power transistor BLV862 LIMITING VALUES In accordance with the Absolute Maximum Rating System
Philips Semiconductors
Original
2222 031 capacitor philips SMD transistor L17 AN98014 UT70-25 912 smd transistor smd transistor Nr MAM031

transistor bd139

Abstract: bvc62 RG4M08-102VM-TG 1 k TR1 NPN transistor BD139 9330 912 20112 TR2 double PNP , DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product , Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 , planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B , power transistor BLV859 LIMITING VALUES In accordance with the Absolute Maximum Rating System
Philips Semiconductors
Original
bvc62 DK230 smd for bd139 PB SmD TRANSISTOR TRANSISTOR 734 vietnam SCA51

transistor bd139

Abstract: BLV862 ribbon hairpin NPN transistor BD139 9330 912 20112 15 nF 47 × 1.8 mm 2 × 5 mm 4 × 6 mm 4 × 8 mm 8.1 × 10 , DISCRETE SEMICONDUCTORS DATA SHEET BLV862 UHF linear push-pull power transistor Product , UHF linear push-pull power transistor FEATURES · Double stage internal input and output matching , amplifiers (vision or sound). DESCRIPTION NPN silicon planar epitaxial transistor with two sections in , Product specification UHF linear push-pull power transistor LIMITING VALUES In accordance with the
Philips Semiconductors
Original
chip die npn transistor SCA55

smd transistor 805 239

Abstract: SMD transistor L17 double PNP transistor BD139 BCV62 2222 030 38109 9330 912 20112 5322 130 60505 Notes 1 , DISCRETE SEMICONDUCTORS DATA SHEET BLV857 UHF linear push-pull power transistor Product , UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B · Internal input , e NPN silicon planar transistor with two sections in push-pull configuration. The device is , Product specification UHF linear push-pull power transistor BLV857 LIMITING VALUES In accordance
Philips Semiconductors
Original
smd transistor 805 239 STR 457 transistor 5- pin smd IC 358 philips resistor 2322 smd transistor bcv62 MBH764 MAM217 SCA53

2222 031 capacitor philips

Abstract: SMD ic catalogue 542 40112 TR2, TR3 NPN transistor BD139 9330 912 20112 Notes 1. American Technical , power transistor Product specification Supersedes data of 1998 Jan 14 1998 Jan 16 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 PINNING FEATURES , handbook, halfpage NPN silicon planar epitaxial transistor with two sections in push-pull configuration , power transistor BLV861 LIMITING VALUES In accordance with the Absolute Maximum Rating System
Philips Semiconductors
Original
SMD ic catalogue mexico Ceramic capacitor 105 M3D099 MAM374 SCA57

philips 2322 734

Abstract: bvc62 RG4M08-102VM-TG 1 k TR1 NPN transistor BD139 9330 912 20112 TR2 double PNP , DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product , UHF linear push-pull power transistor BLV859 PINNING SOT262B FEATURES · Double internal , DESCRIPTION e NPN silicon planar transistor with two sections in push-pull configuration. The device is , specification UHF linear push-pull power transistor BLV859 LIMITING VALUES In accordance with the
Philips Semiconductors
Original
philips resistor 2322-734 2322 722 tr2 smd pin configuration transistor BD139 smd 4814 PNP UHF transistor

AGP 9805

Abstract: transistor SMD FLO 14 transistor BD139 9330 912 20112 15 nF 47 x 1.8 mm 2 x 5 mm 4 x 6 mm 4 x 8 mm 8.1 x 10 mm 1 5 x 2 mm 5 x 1 0 , DISCRETE SEMICONDUCTORS BITÂ S y i I T BLV862 UHF linear push-pull power transistor Product , power transistor FEATURES · Double stage internal input and output matching networks for an optimum , planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a , iconductors Product specification UHF linear push-pull power transistor LIMITING VALUES In accordance
-
OCR Scan
AGP 9805 transistor SMD FLO 14 transistor smd bh PH smd transistor PH smd transistor GY smd transistor GY 740

transistor bd139

Abstract: smd transistor zi device under test BLT71/8 TR2 NPN transistor BD139 4330 030 36301 9330 912 20112 , DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT71/8 UHF power transistor Product , UHF power transistor BLT71/8 PINNING - SOT96-1 FEATURES · High efficiency PIN · Very , , halfpage DESCRIPTION 1 NPN silicon planar epitaxial power transistor encapsulated in a SOT96-1 (SO8 , power transistor BLT71/8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal
Philips Semiconductors
Original
smd transistor zi MBK187

BHCB2

Abstract: china tv schematic diagram B1 and B2 semi rigid coax balun UT70-25 25 70 mm T1 and T3 NPN transistor BD139 , ) MHz frequency range. 2 INTRODUCTION The BLV857 is a bipolar linear push-pull power transistor designed to operate in the (470 to 860) MHz range. The transistor is encapsulated in a SOT324B 4 , " and "Appendix 2". 4.3 Bias circuit: ("Appendix 1" and "Appendix 2") Each transistor has its own , situated on a distance of approx. 1 mm from the transistor. The capacitors C23, C24, C53 and C54 are
Philips Semiconductors
Original
AN98016 BHCB2 china tv schematic diagram Sage Laboratories BHCB2 tv schematic diagram PHILIPS transposers Sage Laboratories

222259016629

Abstract: bvc62 transistor BD139 933091220112 T2, T4 double PNP transistor BVC62 532213060505 B1, B2, B3 , APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION , transistor 1 Application Note AN98013 ABSTRACT A broadband linear amplifier design is presented , power transistor designed to operate in the 460 to 860 MHz range. With a specified output power of 20 W
Philips Semiconductors
Original
222259016629 222259116641 BLV589 BD139 transistor circuit diagram smd transistor nc 61 TRANSISTOR T4 SMD

bd139 equivalent transistor

Abstract: PHILIPS colour television schematic 14 Internal matching Gain and impedance data APPENDIX G2 25 TRANSISTOR DESCRIPTION APPENDIX G1 , stages a broadband high power amplifier design is described with the BLV862 transistor. The design , transistor and amplifier design is given. The tuning procedure used for this amplifier is described and its , Note 1. POUT-ref = 40 W (CW). 3 3.1 TRANSISTOR DESCRIPTION Main properties of the BLV862 The BLV862 is a 150 W transistor incorporated in a gemini package SOT262B. A simplified outline of this
Philips Semiconductors
Original
bd139 equivalent transistor PHILIPS colour television schematic 14 Str W 5754 diode gp 805 CIRCUIT DIAGRAM OF BD139 140 BD139 PIN DIAGRAM

bd139 equivalent

Abstract: BLV862 40112 T2 and T3 NPN transistor BD139 9330 912 20112 B1 semi rigid coax balun UT70 , IV & V TV Transmitters based on the BLV861 CONTENTS 1 INTRODUCTION 2 TRANSISTOR , broadband high power amplifier has been described with a single BLV861 transistor. The design objectives , TRANSISTOR DESCRIPTION 2.1 BLV861 Internal Configuration The BLV861 is a 100 W transistor , degree of reliability and ruggedness. The main transistor data is summarised in Table 2. Table 2
Philips Semiconductors
Original
AN98033 bd139 equivalent ATC180R transistor DK ql MGM734 linear handbook S21-ripple

BD139

Abstract: BD140 BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are , and BD139, and the complementary PNP types are the BD136 and BD140. Figure 1. Internal , BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139-10 BD139-10 BD139-16 BD139-16 BD140 BD140 BD140-10 BD140-10 BD140-16 Package Packaging SOT-32 Tube BD140-16 1/9 9 BD135 - BD136 - BD139 - BD140 1 Electrical ratings
-
Original
BD139-10 BD139-16 BD139 application BD140 application circuits circuits BD139 NPN transistor BD140 npn TRANSISTOR NPN BD140 of ic BD140 BD135-16/BD139-16 BD136-16/BD140-16 JESD97

bd139

Abstract: bd137 BD135 BD137 BD139 NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors , Corp. BD135 BD137 BD139 NPN SILICON TRANSISTOR TO-126 CASE - MECHANICAL OUTLINE LEAD CODE: 1 , Resistance SYMBOL BD135 BD137 BD139 VCBO 45 60 100 VCEO 45 60 80 VEBO 5.0 IC 1.5 ICM 2.0 IB 0.5 IBM 1.0 PD , =30mA (BD137) 60 BVCEO IC=30mA (BD139) 80 VCE(SAT) IC=500mA, IB=50mA 0.5 VBE(ON) VCE=2.0V, IC=500mA 1.0 hFE VCE
Central Semiconductor
Original
BD137-16 power transistor bd139 transistor bd137 BD139 amplifier power transistor bd137 TRANSISTOR NPN BD139 bd137 Transistor 100MH BD135-10 BD137-10

BD139

Abstract: transistor bd137 BD135/BD137/BD139(NPN) TO-126 Transistor TO-126 7.400 7.800 1. EMITTER 3.000 2.500 , 16 100-250 BD135/BD137/BD139(NPN) TO-126 Transistor Typical Characteristics - , Temperature Dimensions in inches and (millimeters) Value BD137 60 60 5 1.5 1.25 150 -55-150 BD139 80 80 V V , V V V µA µA V V Collector-base breakdown voltage V(BR)CBO Ic=100µA,IE=0 BD137 BD139 BD135 Collector-emitter breakdown voltage V(BR)CEO* Ic=30mA,IB=0 BD137 BD139 Emitter-base
-
Original
BD139 NPN BD139 TRANSISTOR power transistor bd135 BD135 NPN transistor to-126 transistor of bd139 BD135/BD137/BD139

8D139

Abstract: BDL39 ^31 003MSS7 120 B BD135 BD137 BD139 Fig. 3 Safe Operating Area with the transistor forward biased. I , BD135 BD137 BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose n-p-n , circuits. The BD136, BD138 and BD140 are complementary to the BD135, BD137 and BD139 respectively. QUICK , 0034255 35ô ill BD135 BD137 BD139 yv. RATINGS Limiting values in accordance with the Absolute , . current gain ratio of matched pairs BD135/BD136; BD137/BD138; BD139/BD140 |ICl=150 mA;|VcEl = 2V BD135
-
OCR Scan
8D139 BDL39 bdxxx Transistor 80139 bd139 bd140 bd139m
Abstract: UNISONIC TECHNOLOGIES CO., LTD BD139 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS ï , MHz 2 of 3 QW-R204-007.C BD139 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS ï , -251 (3) refer to hFE (4) L: Lead Free, G: Halogen Free 1 of 3 QW-R204-007.C BD139  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector-Base Voltage Collector-Emitter , CBO Emitter Cut-Off Current I EBO DC Current Gain h FE BD139-10 DC Current Gain BD139 Unisonic Technologies
Original
BD139L- BD139G-

BD135

Abstract: BD135 BD137 BD139 BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS , -16 Product-Rank BD139-6 BD139-10 BD139-16 Range 40~100 63~160 C N L H M 100~250 , Voltage Symbol 45 BD137 VCEO 60 BD135 BD137 BD139 BD139 Emitter to Base Voltage , specification will not be informed individually. Page 1 of 2 BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise
SeCoS
Original
BD135 BD137 BD139 BD135-6 BD137-6 BD139-6
Showing first 20 results.