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transistor A683

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: €“62 to +150°C +125°C Thermal Characteristics1 RFOUT θJC2 Active Transistor Power Dissipation2 , €“63.1 –70.5 –68.3 –56.3 –60.9 –68.3 –64.5 –66.2 –71.6 –64.7 –61.8 –64.0 â ... Agilent Technologies
Original
datasheet

4 pages,
51.94 Kb

A683 Transistor TEXT
datasheet frame
Abstract: Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case , €“63.7 –64.5 –67.4 –68.3 –61.6 .035 .038 .039 .036 .031 .037 .067 .117 .186 .254 ... Teledyne Cougar
Original
datasheet

5 pages,
126.86 Kb

TEXT
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Abstract: DATA SHEET SILICON TRANSISTOR ÂuPA808T uPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz 2.1±0.1 NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.25±0.1 • A Super Mini Mold Package Adopted Taping , €“63.1 –63.8 –65.4 –66.0 –67.1 –68.3 –69.4 –71.4 5 ÂuPA808T uPA808T V CE = 1 V, IC = 20 ... Original
datasheet

6 pages,
33.71 Kb

A641 NPN transistor PA808T TEXT
datasheet frame
Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR ÂuPA808T uPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS , €“63.1 –63.8 –65.4 –66.0 –67.1 –68.3 –69.4 –71.4 5 ÂuPA808T uPA808T V CE = 1 V, IC = 20 , 0.141 0.132 0.127 0.122 0.123 0.123 S21 ANG –16.8 –31.1 –43.8 –58.4 –68.3 â ... Renesas Electronics
Original
datasheet

14 pages,
278.62 Kb

TEXT
datasheet frame
Abstract: Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E MIL-HDBK-217E, AUF @ 90 , €“25.7 –38.0 –49.5 –56.4 –62.9 –66.2 –64.4 –66.2 –67.5 –63.7 –64.5 –67.4 –68.3 ... Agilent Technologies
Original
datasheet

6 pages,
65.59 Kb

TEXT
datasheet frame
Abstract: Ceramic capacitor, 2.4 pF Ceramic capacitor, 1.2 pF Transistor Resistor, 0 Ω Potentiometer, 2k â , €” 1960 MHz Frequency Z Load jX –6.95 –6.91 –6.87 1830 5.31 –6.83 , Transistor Resistor, 0 Ω Potentiometer, 2k Ω ATC ATC Infineon Technologies Digi-Key Digi-Key ... Infineon Technologies
Original
datasheet

14 pages,
482.44 Kb

PTMA180402M TEXT
datasheet frame
Abstract: TRANSISTOR ÂuPA812T uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH , 0.322 0.322 0.321 0.334 –28.0 –50.0 –68.3 –81.6 –93.4 –106.1 –117.3 â ... Renesas Electronics
Original
datasheet

8 pages,
246.62 Kb

TEXT
datasheet frame
Abstract: BFP93A/BFP93AW BFP93A/BFP93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1 1 13 653 13 579 94 9279 3 2 4 BFP93A BFP93A Marking: FE Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base , 159.6 151.4 146.1 140.0 132.3 125.4 121.6 –68.3 –133.8 –158.7 –178.4 172.5 165.1 ... Vishay Intertechnology
Original
datasheet

10 pages,
109.79 Kb

BFP93A/BFP93AW TEXT
datasheet frame
Abstract: TRANSISTOR ÂuPA813T uPA813T NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570 2SC4570) SMALL MINI MOLD , €“48.3 –50.7 –52.1 –54.9 –57.7 –61.3 –64.6 –68.3 –71.6 –74.9 –81.4 (V CE = ... Renesas Electronics
Original
datasheet

10 pages,
266 Kb

nec a1232 TEXT
datasheet frame
Abstract: Pb−Free Pkg Level 1 Level 1 UL 94 V−0 @ 0.125 in Transistor Count 164 Meets or exceeds , ˆ’10.7 0.291 167.4 36.0 62.843 41.1 −22.5 0.075 −68.3 −13.9 0.201 70.2 ... ON Semiconductor
Original
datasheet

11 pages,
317.1 Kb

NB7L216 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/download/85023415-313978ZC/an1858sw.zip ()
KyteLabs 11/06/2002 444.92 Kb ZIP an1858sw.zip