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Part Manufacturer Description Datasheet BUY
OPA683IDBVTG4 Texas Instruments Very Low Power Current Feedback Amplifier with Disable 6-SOT-23 -40 to 85 visit Texas Instruments
OPA683IDBVT Texas Instruments Very Low Power Current Feedback Amplifier with Disable 6-SOT-23 -40 to 85 visit Texas Instruments Buy
OPA683IDBVR Texas Instruments Very Low Power Current Feedback Amplifier with Disable 6-SOT-23 -40 to 85 visit Texas Instruments
OPA683IDBVRG4 Texas Instruments OP-AMP, 4300uV OFFSET-MAX, 200MHz BAND WIDTH, PDSO6, GREEN, PLASTIC, SOT-23, 6 PIN visit Texas Instruments
OPA683IDR Texas Instruments Very Low Power Current Feedback Amplifier with Disable 8-SOIC -40 to 85 visit Texas Instruments
OPA683IDG4 Texas Instruments Very Low Power Current Feedback Amplifier with Disable 8-SOIC -40 to 85 visit Texas Instruments

transistor A683

Catalog Datasheet MFG & Type PDF Document Tags

A1046 transistor

Abstract: A683 Transistor '"62 to +150°C +125°C Thermal Characteristics1 RFOUT θJC2 Active Transistor Power Dissipation2 , '"63.1 â'"70.5 â'"68.3 â'"56.3 â'"60.9 â'"68.3 â'"64.5 â'"66.2 â'"71.6 â'"64.7 â'"61.8 â'"64.0 â
Agilent Technologies
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Abstract: Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case , '"63.7 â'"64.5 â'"67.4 â'"68.3 â'"61.6 .035 .038 .039 .036 .031 .037 .067 .117 .186 .254 Teledyne Cougar
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transistor A431

Abstract: A641 NPN transistor DATA SHEET SILICON TRANSISTOR µPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES â'¢ Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz 2.1±0.1 NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.25±0.1 â'¢ A Super Mini Mold Package Adopted Taping , '"63.1 â'"63.8 â'"65.4 â'"66.0 â'"67.1 â'"68.3 â'"69.4 â'"71.4 5 µPA808T V CE = 1 V, IC = 20
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transistor A431 A641 NPN transistor TRANSISTOR A107 PA808T-T1 2SC5184
Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR µPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS , '"63.1 â'"63.8 â'"65.4 â'"66.0 â'"67.1 â'"68.3 â'"69.4 â'"71.4 5 µPA808T V CE = 1 V, IC = 20 , 0.141 0.132 0.127 0.122 0.123 0.123 S21 ANG â'"16.8 â'"31.1 â'"43.8 â'"58.4 â'"68.3 â Renesas Electronics
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Agilent 9981

Abstract: transistor n a683 Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90Â , '"25.7 â'"38.0 â'"49.5 â'"56.4 â'"62.9 â'"66.2 â'"64.4 â'"66.2 â'"67.5 â'"63.7 â'"64.5 â'"67.4 â'"68.3
Agilent Technologies
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Agilent 9981 transistor n a683 1000MH PP-38 P-222 SN62PRMAB3 5963-3232E 5963-2456E
Abstract: Ceramic capacitor, 2.4 pF Ceramic capacitor, 1.2 pF Transistor Resistor, 0 â"¦ Potentiometer, 2k â , '" 1960 MHz Frequency Z Loadï' ï—ï' ï' ï'  jX â'"6.95 â'"6.91 â'"6.87 1830 5.31 â'"6.83 , Transistor Resistor, 0 â"¦ Potentiometer, 2k â"¦ ATC ATC Infineon Technologies Digi-Key Digi-Key Infineon Technologies
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PTMA180402M PG-DSO-20-63 JESD22-A114F
Abstract: TRANSISTOR µPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH , 0.322 0.322 0.321 0.334 â'"28.0 â'"50.0 â'"68.3 â'"81.6 â'"93.4 â'"106.1 â'"117.3 â Renesas Electronics
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A1489 TRANSISTOR

Abstract: BFP93A/BFP93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1 1 13 653 13 579 94 9279 3 2 4 BFP93A Marking: FE Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base , 159.6 151.4 146.1 140.0 132.3 125.4 121.6 â'"68.3 â'"133.8 â'"158.7 â'"178.4 172.5 165.1
Vishay Intertechnology
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A1489 TRANSISTOR BFP93AW 88/540/EEC 91/690/EEC D-74025

nec a1232

Abstract: TRANSISTOR µPA813T NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD , '"48.3 â'"50.7 â'"52.1 â'"54.9 â'"57.7 â'"61.3 â'"64.6 â'"68.3 â'"71.6 â'"74.9 â'"81.4 (V CE =
Renesas Electronics
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nec a1232
Abstract: Pbâ'Free Pkg Level 1 Level 1 UL 94 Vâ'0 @ 0.125 in Transistor Count 164 Meets or exceeds , '10.7 0.291 167.4 36.0 62.843 41.1 â'22.5 0.075 â'68.3 â'13.9 0.201 70.2 ON Semiconductor
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NB7L216 NBSG16 NB7L216/D

transistor A1024

Abstract: A1712 DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE â' HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES â'¢ Ideal for low noise â' high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz â'¢ Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz â'¢ SiGe , 0.563 â'12.7 â'25.8 â'36.8 â'48.6 â'58.4 â'68.3 â'77.5 â'86.6 â'95.0 20.303
NEC
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transistor A1024 A1712 2SC5761-T2
Abstract: Table 20 17 â'155 13 â'159 60 â'68.3 â'8 dBFS tones â'8 dBFS tones â'2 dBFS tone â Analog Devices
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AD6676 JESD204B AD66761 CB-80-5 AD6676BCBZRL AD6676EBZ

D64dS

Abstract: 29f64 technical data referencing obsolete Devices.) Facilitates substitution when used with the Transistor D.A.T.A
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OCR Scan
D64dS 29f64 DD6-103 1N311 crydom s441 29f1615