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transistor+2sc2909

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 , . unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 , , IE=0 VEB=(­)4V, IC=0 max (­)0.1 100* * : The 2SA1207/2SC2909 are classified by 10mA hFE as , JAPAN 70502TN (KT)/71598HA (KT)/4190MO/3187AT/2255MY, TS No.778-1/4 2SA1207/2SC2909 Continued from , =-5V Ta=7 5 Collector Current, IC ­ mA 10 60 ITR02990 IC - VBE 80 -50 2SC2909 SANYO Electric
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2SA1207 ITR02989 2SA1207/2SC2909
Abstract: Ordering number:EN778E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions · Adoption of FBET , . unit:mm 2003A [2SA1207/2SC2909] JEDEC:TO-92 EIAJ:SC-43 SANYO:NP ( ) : 2SA1207 , tstg See specified Test Circuit 1.0 us * : The 2SA1207/2SC2909 are classified by 10mA hFE , /2SC2909 No.778-2/4 2SA1207/2SC2909 No.778-3/4 2SA1207/2SC2909 No products described or SANYO Electric
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2sa120
Abstract: No.N 7 7 8 E 2SA1207 / 2SC2909 No. N778E O0899 No.778A( ' - 88 No.778D) 87 PNP / NPN 2SA1207 / 2SC2909 AF60W FBET hFE Cob ()2SA1207 Absolute Maximum , / 2SC2909 min ton tf tstg typ 0.1 max unit us us us 0.2 1.0 2SA1207 / 2SC2909 10mA hFE 100R200 140S280 200T400 IN OUT IB1 3k IB2 2k 5k 50 , 10 IB=0 -10 0.15mA 30 2SC2909 VCE=5V 70 60 50 40 °C 25°C -25°C -20 -
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transistor 2sc2909 778D N778 5229KN 2027YO N064YO 6030YO 4030YO 10IB1
Abstract: Ordering number: EN 778E No.778E 2SA1207/2SC2909 i PNP/NPN Epitaxial Planar Silicon , * : The 2SA1207/2SC2909 are classified by 10mA hFE as follows : 100 R 200 140 S 280 200 T 400 , /3187AT/2255MY.TS No.778-1/4 2SA1207/2SC2909 IC " VCE / 2 3A1207 f- -0 -0 , JJJ 0-2 0.4 0-6 0-8 1.0 Base to Emitter Voltage,VBE - V 1.2 = 75 25°C 1 2SC2909 !. VrR = , °C s Collector Current,Iq - mA fT " IC aâ'" 2SC2909 -
OCR Scan
2sa2909 2SA29
Abstract: 2SC2999 2SC1275 2SC 1608 «±a 2SC1001 2SC 1613 â¡ â'"A 2SC2909 2SC 1613A â¡ â'"A 2SD958 2SC1914A 2SC 1614 â¡ â'"A 2SC2909 2SC 1615 â¡ â'"A 2SC2909 2SC 1617 2SD718 -
OCR Scan
2SC1681 2SC1843 2SC1740LN 2SC2363 2SC2068 2SC1515 2sc1971 2SC1165 2SC2990 2SC1764 2SC1570 2SC1775 2SC2634 2SC2320L
Abstract: Ordering number: EN 778E 2SA1207/2SC2909 I P N P/N PN E p itax ial P la n a r Silicon T ran sisto rs S A iV D J High-Voltage Switching, AF 60W Predriver Applications F e a tu re s â'¢ Adoption of FBET process. . H igh breakdow n voltage. - E xcellent lin e arity of hpE and , )2.0 pF 0.08 V 0.3 (0.14) (0.4) 0.1 ps 0.2 ps 1.0 ps * : The 2SA1207/2SC2909 a re , .778-1/3 181 Collector C urrent,Ic - mA 2SA1207/2SC2909 Gain-Bandwidth Product.fr â'" MHz -
OCR Scan
2SA1207/2SC2 4190MO/3187AT/2255MY
Abstract: Ordering number: EN 778E 2SA1207/2SC2909 SÃ0.778E P N P /N PN E pitaxial P la n a r Silicon T ran sisto rs SA i YO r. High-Voltage Switching, AF 60W Predriver Applications F e a , 2SA1207/2SC2909 a re classified by 10mA hpg as follows : 100 R 200 140 S 280 200 T , 2SA1207/2SC2909 2 5A1207 f'% Y n i _ 0.1mA - 0 05mA IB= 0 0 -IO -20 -30 -40 -50 , > â¡ -o cr Collector to E m itter O u tp u t Capacitance,c0i, - pF 2SA1207/2SC2909 â d _U -
OCR Scan
2034/2034A SC-51 3C-43
Abstract: ♦ * » * * * * * * * ♦ * ♦ * ♦ * * * « * * m s Type No. a « Manuf. H m SANYO 3C S TOSHIBA B X NEC B iL HITACHI » ± a FUJITSU fô T MATSUSHITA " H * MITSUBISHI â¡ - A ROHM 2SC 1898 STB» 2SC2839 2SC1393 2SC1S55 2SC1047 2SC180S 2SC 1899 SrBÃ" 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC 1900 SíBfc 2SC2909 2SC1845 2SC1775A 2SC1573 2SC2389 2SC 1903 y «±a 2SC2911 2SC2229 2SC2682 , 1914 H B 2SC3495 2SC2240 2SC1841 2sd1011 2SC19I4A 2SC2389 2SC 1915 h « 2SC2909 2SC2229 2SC1841 -
OCR Scan
2SC1730 2SC1215 2SC2078 2SC1344 2SC1840 2SC1684 2SC144 2SC1919 2sc763 2sc1918 2sc945 2SC1628 2SD668A 2SC1953 2SC1755 2SC1447 2SD1163
Abstract: 2SC3272 2SC 1515(H) b iL 2SC2909 2SC2229 2SC3415 2SC 1516«) b iL 2SD612K 2SC790 2SC1162 2SC1226 -
OCR Scan
2SC2102 2SC2282 2SC2103 2SC2181 2SC2917 2SC2496A 2sc2915 hitachi 2Sc515a 2SC2894 2SC2611 2SC2281 2SC3008-KA
Abstract: 2SD1133 2SD1267 2 SC3353A 2SC3353A 2SC2834 2SD685 2SD1230 2SD524 2SD683 2SC2960 2SC2960 2SC4641 2SC2909 2SC1570 2SC1570 2SC2362 2SC2909 2SD612K 2SD612K 2SD330 2SC3330 2SC2274 2SD734 2SC2274 2SC2839 2SC2839 -
OCR Scan
2SC1818 2SC1825 2SC2516 2SC3419 2SD467 2SC2320 2SD786 2SC4280 2sc1832 2SC 1827 F 2sc738 2SC1819 2SC1820 2SC1822 2SC1823 2SC1824
Abstract: 2SC2909 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)160 V(BR)CBO (V)180 I(C) Max. (A)70m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)150Ãu I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)300m @I(C) (A) (Test Condition)30m @I(B) (A) (Test Condition)3.0m h(FE) Min. Current gain.100 h(FE) Max. Current gain.400 @I(C) (A) (Test Condition)10m @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq150MÃ' @I(C) (A) (Test American Microsemiconductor
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Abstract: 1.5 3 0. 3 2SC2909 Hi* HV SW/LF A 180 160 0.07 0.6 0.1 80 100 400 5 0.01 0. 3 0.03 0.003 2SC2910 , 2 (MP-80) BCEC 2SC2908 150» 10 0.01 0.1» 0.2» 1» 2» 2SA1207 TO-92B ECB 2SC2909 150 -
OCR Scan
2SC2891 2SC2892 2SC2893 2SC2895 2SC2896 2SC2897 2SC2930 2SC2903
Abstract: 2SC1740 2SC 1649 """ â¡ â'"A 2SC2909 2SD1011 -
OCR Scan
2SC2291 2SC4453 2SC2412K 2SC1345 2SC1685 2SC1252 2SC1740 R 2SC458LG B 2sc458 2SC2104 2SC891 2SC2480 2SC4911K
Abstract: 2SC2909 2SC2230 2SC 1707 (H) a ÃL 2SC2aSu 2SC372(S) 2SC 1707A s a 2SC2960 2SC2550 -
OCR Scan
2SC1674 2SC535 2SC1548 2SC1833 2SC4282 2SC1269 TIL 729 2sc1707 2SC1736 2SC33 ZSC2999 2SC1675 2SC1342 2SC1S81 2SC2058
Abstract: - 11 3 - m % ífc Manuf. B ÍL B « B m. « SANYO TOSHIBA S Type No. * 2SC1387 * 2SC1390 * 2SC1393 * 2SC1394 * 2SC1395 * 2SC1396 2SC1090 * 2SC1399 H NEC 2SC1252 2SC1675 B ÍL HITACHI * ± a FUJITSU tö T MATSUSHITA 2SC2634 = $ MITSUBISHI - A ROHM 2SC2058 2SC3801 s a TÍl ' T 2SC2999 2SC2999 2SC3776 2SC3776 2SD330 2SC2909 2SC2362 2SC398 2SC1923 2SC387ATM 2SC387ATM ¿óuiau 2SC2240 2SC2220 2SD718 2SD718 2SD718 2SC1856 2SC1906 2SC1730 2SC1730 ¿ 5 U Z Ö Ö 2SC1907 -
OCR Scan
2SC603 2SC1010 2SC1268 2SD2023 2SD331 2SC1130 2sc 1416 y 2SC19 2SC2543 2SD1110 2SD111 2SC2083 2SC2286-KA
Abstract: te T te T te te = = T T * >¥ T T T te te a R B T T i tr ÍI 2SC2909 ^^n^QnQ 2SC2362 2SC2362 -
OCR Scan
2SC2829 2SC3277 2SC2553 2SC2914 2SC3531 2SC3358 2SC3536 2SC2837 2SC2828 2SC2830 2SC2831 2SC2139
Abstract: - 257 - S! S Type No. tt « Manuf. = if SANYO X 2 TOSHIBA B S NEC B iL HITACHI » ± « FUJITSU fô T MATSUSHITA H m MITSUBISHI â¡ - A ROHM 2SD 2022 Oâ'"A 2SD1394 2SD1481 2SD1217 2SD 2023 » â¡ -A 2SD2027 2SD880 2SD1567 2SD856 2SD 2024 â¡ â'"A 2SD1248 2SD1634 2SD 2025 â¡ â'"A 2SD1928 2SD2094 2SD1634 2SD 2026 Oâ'"A 2SD1851 2SC2532 2SD892 2SD 2027 H if 2SD880 2SD1567 2SD856 2SD2023 2SD 2028 H if 2SD1304 2SD 2029 f fâ T 2SC3280 2SD 2030 a ïr 2SC2909 -
OCR Scan
2SC2631A 2SC4817 2SC3808 2SD2404 2SD1555 2SC3346 nec 2035 2035 HITACHI 2055 2SC3478 2SC2631 2SC4218 2SC3478A 2SD1914
Abstract: 2SC2389 2SC 2544 < b iL 2SC2909 2SC2240 2SC1845 2SC1980 2SC1708A 2SC2389 2SC 2545 ' B ÌL 2SC2240 -
OCR Scan
2SC2352 2SC1778 2SC2538 2SC2407 2SC2939 NEC 2532 Ka 2535 2SC2460b 2sc2238 2SC1359 2SC2345 2SC380I 2SA1469
Abstract: - 143 - Si S Type No. tt S Manuf. h. m SANYO m S TOSHIBA a m NEC 0 iL HITACHI Sä ± il FUJITSU fé T MATSUSHITA H m MITSUBISHI â¡ - A ROHM 2SC 2627 / H m 2SC2101 2SC2281 2SC 2628 ' H £ 2SC2102 2SC2282 2SC 2629 = * 2SC2420 2SC 2630 X â'¢ m 2SC2782 2SC2917 2SC 263 1 fé T 2SC2909 2SC3478 2SC2389 2SC 2632 fé T 2SC2910 2SC3800 2SC 2633 _ fé T oor-1 fico ¿Ol/l ooo 2SC 2634 fé T 2SC1570 2SC2695 2SC1740LN 2SC 2636 fé T 2SC3080 2SC 2637 fà -
OCR Scan
2SC2627 2SC2570A 2SC 143 SANYO nec 2651 2SC2283 2sc2644 2sc2317 2SC2287-KA 2SC2288-KA 2SC2628 2SC2629 2SC2283-KA
Abstract: 2SC3004 2SD764 2SD1541 2SD1577 2SD870 2SC1841 2SD868 2SD871 2SD871 2SC2909 2SD1236 2SD1236 2SD1236 2SC4328 -
OCR Scan
2SD946 2SD947 MG50G2CL3 2SD894 2SD1953 2SD985 957a 2SD1960 MG50G2cl3 toshiba 2sd1111 946b 2SD936 2SD937 2SD938 2SD939 2SD940 2SD941
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