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2N4427 Microsemi Corporation 2N4427 visit Digikey Buy
2N4427 Central Semiconductor Corp RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-39 visit Digikey Buy
2N4427 PBFREE Central Semiconductor Corp TRANS NPN 20V 0.4A TO-39 visit Digikey Buy
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transistor+2N4427

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2N4427 w w w. c e n t r a l s e m i . c o m SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4427 is a silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER TO , ) 2N4427 SILICON NPN RF TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base , 2N4427 SILICON NPN RF TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS R1 (4-June 2013) w w w. c e Central Semiconductor
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Transistor 2n4427 200MH 175MH
Abstract: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS F eatures â'¢ â'¢ â'¢ â'¢ â'¢ â , Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 2N4427.PDF 6-25-03 , contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct 2N4427 , 500 - - MHz - 4.0 - pF 2N4427.PDF 6-25-03 Advanced Power Technology , our website at WWW.ADVANCEDPOWER.COM or contact our factory direct 2N4427 ELECTRICAL Advanced Power Technology
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62503 MRF545 MRF544
Abstract: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · · · · · Silicon NPN, To , Derate above 25ºC MSC1301.PDF 10-25-99 2N4427 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC , 4.0 - pF 2N4427 FUNCTIONAL Symbol Test Conditions Value Min. GPE Power Gain , 110.0 Pin (mWatts) MSC1301.PDF 10-25-99 135.0 160.0 185.0 210.0 2N4427 C5 C6 , capacitors are air variable otherwise indicated. . MSC1301.PDF 10-25-99 2N4427 SO-8 12 Microsemi
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2n4427 MOTOROLA motorola 2N4427 BFR90 amplifier npn UHF transistor 2N5179 2N4427 equivalent bfr91 npn UHF transistor MRF559 MRF8372 MRF557 MRF557T MRF5812 MRF914
Abstract: ï»¿â  bb53131 0Q217Ã1 bQE «APX N AMER PHILIPS/DISCRETE bTE P 2N3866 2N4427 SILICON PLANAR , 2N4427 VCER max. 55 40 V Collector-emitter voltage (open base) vCEO max. 30 20 V Emitter-base , . performance type number f (MHz) VCE (V) Po 45 2N4427 175 12 1 , Respective Manufacturer AMER PHILIPS/DISCRETE 2N3866 2N4427 A blE D ^53^31 002^762 54^ HAPX RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) 2n3866 2n4427 -
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philips ferroxcube 4312 020 36690 2N3866 class-a Transistor 2N3866 2N3866 metal Philips 4312 020 4312 020 36640 7Z5S32 7Z08867 7Z10S20 7ZI0624 53T31
Abstract: b5E D 711Dfl2b 00L3b7fl CHG â  PHIN PHILIPS INTERNATIONAL 2N3866 2N4427 SILICON PLANAR , 2N4427 RBE = 10 n VCER max. 55 40 V Collector-emitter voltage (open base) vCEO max. 30 20 V , . 500 500 MHz type number f (MHz) VCE (V) Po (W) Gp (dB) V 10 >45 2N4427 175 12 , Respective Manufacturer 2N3866 2N4427 bSE D 711DÃSb â¡Dt.3t.7c] T27 IPHIN PHILIPS INTERNATIONAL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) 2N3866 2N4427 -
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2N3866 RF CLASS A RF 2N3866 2n3866 philips PHILIPS 4312 amplifier data 2n3866
Abstract: â  bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D , itter voltage V CER R& e = 10 max. 55 2N4427 40 V v C EO max. 30 20 V , *T min. 500 500 M Hz R.F. performance type number 2N3866 2N4427 f (MHz) V C E , voltage (open em itter)^ 2N4427 v CBO m ax. 55 40 V VCER max. 55 40 V , _ bbSB^Bl 002^763 4fl5 b'lE » N AMER PHILIPS/DISCRETE IAPX 2N 3866 2N4427 -
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t 3866 power transistor transistor 3866 s t 3866 transistor transistor 3866 550S7
Abstract: 2N4427 w w w. c e n t r a l s e m i . c o m SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4427 is a silicon types are silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL , pF dB 50 % 100 mW R1 (4-June 2013) 2N4427 SILICON NPN RF TRANSISTOR TO-39 CASE , R1 (4-June 2013) w w w. c e n t r a l s e m i . c o m 2N4427 SILICON NPN RF TRANSISTOR Central Semiconductor
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Abstract: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · · Silicon NPN, To , Dissipation @ TA = 25ºC Derate above 25ºC MSC1301.PDF 10-25-99 2N4427 ELECTRICAL SPECIFICATIONS , - MHz - 4.0 - pF 2N4427 FUNCTIONAL Symbol Test Conditions Value Min , 2N4427 C5 C6 Vcc = 12V L3 C3 C1 L4 L1 POUT (RL=50 OHMS) PIN (RS=50 OHMS , 2N4427 2N5109 NPN 200 3 10 15 12 1200 20 400 TO-39 MRF5943C NPN Microsemi
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2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 low cost BFR90 transistor 4600 8 pin ic 2N3866 MOTOROLA s parameters MRF581 MRF586 MRF951 MRF571 BFR91 BFR90
Abstract: File No. 228 DQGBZ/D RF Power Transistors Solid State Division _ 2N4427 Silicon N-P-N , MHz VCC = 12 V â  0.4 W output with 5 dB gain (typ.) at 470 MHz VCC=12V RCA-2N4427 is an , registration data format JS-6 RDF-3. 81 11-71 2N4427 File No. 228 ELECTRICAL CHARACTERISTICS, At Case , File No. 228 2N4427 175 MHz OPERATION 2N4427 3 , 2N4427 a a CT 40r J-,20 " -
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RCA-2N4427 2n4427 rca Trimmer ARCO 9ZCS-13157R2 92CS-I9I73 92CS-I564IR2
Abstract: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · · · · · Silicon , Dissipation @ TA = 25ºC Derate above 25ºC 2N4427.PDF 6-25-03 Advanced Power Technology reserves the , at WWW.ADVANCEDPOWER.COM or contact our factory direct 2N4427 ELECTRICAL SPECIFICATIONS (Tcase = , pF 2N4427.PDF 6-25-03 Advanced Power Technology reserves the right to change, without notice , contact our factory direct 2N4427 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) FUNCTIONAL Symbol Advanced Power Technology
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MRF4427 1300 NPN MRF607 MRF555 MRF553 2N6255
Abstract: 2N4427 BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar , Storage and Junction Temperature 3.5 W ­ 65 to 200 °C 1/5 2N4427-BFR98 THERMAL DATA Rt , circuit. RF Output Power. 2/5 V Collector-base Capacitance. 2N4427-BFR98 TEST CIRCUIT , 2N4427-BFR98 TO39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP , F H B L P008B 4/5 2N4427-BFR98 Information furnished is believed to be STMicroelectronics
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2n4427-bfr98 2N4427-BFR98
Abstract: rz7 SCS-THOMSON 2N4427 A7f BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and oscillator applications. INTERNAL SCHEMATIC DIAGRAM o BO NPN S- b»H , Temperature - 65 to 200 °C January 1989 1/3 403 2N4427-BFR98 THERMAL DATA R th i-case Thermal , . Collector-base Capacitance. G - 3347 G - 3348 â'"_ /ZT SCS-THOMSON Eûaocin®iiiyiciriR©i)9ocs 404 2N4427 -
OCR Scan
a7f transistor A-7-F npn zg
Abstract: R IPTIO N The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Je d e c T O -39 , rature 40 20 3.5 0.5 3.5 - 65 to 200 V V V A W °C January 1989 1/5 2N4427 , rz7 SGS-THOMSON < < 2N4427-BFR98 TEST CIRC UIT Test C ircuit tor Pow er O utput M , , 1/4" ID, 1/4" long = 4 turns 16 w ire, 3/8" ID, 3/8" long *57 SGS-THOMSON 3/5 2N4427 , SGS-THOMSON 2N4427-BFR98 Information furnished is believed to be accurate and reliable. However -
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4427B FR98 SGS-Thomson
Abstract: 3QE D â  0 Q 31 22 1 5 â  ~ T >3 3 - 0 3 - SGS-THOMSON [»^(miOTFlFMOfOS 2N4427 BFR98 S G S-THOMSON -â'" â'" - VHF OSCILLATOR POWER AMPLIFIER DESC RIPTIO N The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in JedecTO-39 metal case. They are , T stg . T j January 1989 Storage and Junction Temperature V 1/3 403 2N4427 , 30E D H 1 ^ 2 3 7 0031523 b â  - â'"- â' S 2N4427 -
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T-33-05
Abstract: 2N4427 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI 2N4427 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS 400 mA IC VCE 20 V PDISS 3.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C JC 50 °C/W 1 = EMITTER 2 = BASE 3 = COLLECTOR NONE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS 20 BVCER Advanced Semiconductor
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high frequency transistor
Abstract: combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , 12.5 TO-39 MRF604 175 0.1 1.0 10.0 12.5 TO-46 2N4427 175 0.1 1.0 10.0 12.5 TO-39 MRF553 175 0.1 1.5 , Watts Watts dB Min Volts Package 2N4427 1.0 0.1 10 12 TO-2Û5AD MRF604 1.0 0.1 10 12.5 T0 -
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MRF237 MRF260 MRF212 MRF262 MRF4070 MRF238 MRF239 MOTOROLA TRANSISTOR MRF239 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA 2N5836 2N5837 MRF511 MRF517 MRF525 2N2857
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4427 The R F Line 1 W - 1 7 5 MHz NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator applications in m ilita ry and industrial equipm ent. Suitable fo r use as o u tp u t driver or pre-driver , »39l M O T O R O L A R F D E V IC E DATA 2 -2 3 2N4427 E L E C T R IC A L C H A R A C T E R , turns No. IB win, I / * " 10. 1/4" long L4: 4 turns No. 16 win, 3/8" ID. 3/8" long Q 2N4427 M O T O R -
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Abstract: combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , 12.5 TO-39 MRF604 175 0.1 1.0 10.0 12.5 TO-46 2N4427 175 0.1 1.0 10.0 12.5 TO-39 MRF553 175 0.1 1.5 -
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MRF572 MRF227 MRF515 MRF629 Motorola transistors MRF630 MRF630 MOTOROLA 2N3553 motorola Transistor MRF630 Motorola transistors MRF629 2N3339 2N5179 MRF501 MRF502 BFX89 BFY90
Abstract: 2N3866; 2N4427 APPLICATIONS DESCRIPTION NPN overlay transistors in TO-39 metal packages with the , 3.5 2.0 0.4 0.4 V V A A 500 3.5 - W MHz - 200 â'¢JC 2N4427 collector-emitter voltage open base 2N3866 2N4427 emitter-base voltage VEBO UNIT R B E=10ii 2N3866 VCEO MAX. open collector 2N3866 Ic 2N4427 collector current (DC) lc(AV , 400 28 1 >10 >45 2N4427 175 12 1 >10 >50 N.I Semi-Conductors reserves New Jersey Semiconductor
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Abstract: ) O UJ o 2N4427 TO-39 12 175 10 2N4440 TO-60 28 400 5 2N4932 TO , -39 2N4427 TO-39 2N4427 TO-39 TA7477 40291 TO-60 40280 TO-39 40280 TO , 1500-2300 Type Pkg 2N3866 TO-39 2N3866 TO-39 2N5108 TO-39 2N5470 Coax 2N4427 TO-39 2N5108 TO , -39 TA7411° Line* TA7411° Strip TA7411° Strip 2N4427 TO-39 Line* (S) tin e * Up to 1 2N1492 TO , -60 2N5016 TO-60 20-40 2N5070 TO-601 40-80 Applications TA2758° 2N4427 TO-39 2N5071 TO -
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RCA-CA3000 rca 2n3375 2N2876 RCA Transistors RCA TO60 TRANSISTORS RCA RF POWER TRANSISTOR rca power transistor 000-S RCA-CA3001 RCA-CA3002 RCA-CA3004 RCA-CA3005
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