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transistor 2N4427

Catalog Datasheet MFG & Type PDF Document Tags

Transistor 2n4427

Abstract: 2N4427 w w w. c e n t r a l s e m i . c o m SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4427 is a silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER TO , ) 2N4427 SILICON NPN RF TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base , 2N4427 SILICON NPN RF TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS R1 (4-June 2013) w w w. c e
Central Semiconductor
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Transistor 2n4427 200MH 175MH

62503

Abstract: 2n4427 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS F eatures â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1 , = 10dB (Min) @ 175 MHz DE SCRIPTIO N: Silicon NPN transistor, designed for VHF and UHF , Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 2N4427.PDF 6-25-03 , contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct 2N4427
Advanced Power Technology
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62503 MRF545 MRF544

2n4427 MOTOROLA

Abstract: motorola 2N4427 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · · · · · Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector , DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier , Derate above 25ºC MSC1301.PDF 10-25-99 2N4427 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC , 4.0 - pF 2N4427 FUNCTIONAL Symbol Test Conditions Value Min. GPE Power Gain
Microsemi
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2n4427 MOTOROLA motorola 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor MRF559 MRF8372 MRF557 MRF557T MRF5812 MRF914

2N3866

Abstract: 2n4427 > 10 < 79 > 45 I* 2N4427 175 12 1,0 > 10 50 II* 2N4427 470 12 0,4 > 10 67 50 The transistor , ï»¿â  bb53131 0Q217Ã1 bQE «APX N AMER PHILIPS/DISCRETE bTE P 2N3866 2N4427 SILICON PLANAR , 2N4427 VCER max. 55 40 V Collector-emitter voltage (open base) vCEO max. 30 20 V Emitter-base , . performance type number f (MHz) VCE (V) Po 45 2N4427 175 12 1 , Respective Manufacturer AMER PHILIPS/DISCRETE 2N3866 2N4427 A blE D ^53^31 002^762 54^ HAPX RATINGS
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philips ferroxcube 4312 020 36690 2N3866 class-a Transistor 2N3866 2N3866 metal Philips 4312 020 4312 020 36640 7Z5S32 7Z08867 7Z10S20 7ZI0624 53T31

2n4427

Abstract: 2N3866 b5E D 711Dfl2b 00L3b7fl CHG â  PHIN PHILIPS INTERNATIONAL 2N3866 2N4427 SILICON PLANAR , 2N4427 RBE = 10 n VCER max. 55 40 V Collector-emitter voltage (open base) vCEO max. 30 20 V , . 500 500 MHz type number f (MHz) VCE (V) Po (W) Gp (dB) V 10 >45 2N4427 175 12 , Respective Manufacturer 2N3866 2N4427 bSE D 711DÃSb â¡Dt.3t.7c] T27 IPHIN PHILIPS INTERNATIONAL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) 2N3866 2N4427
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2N3866 RF CLASS A RF 2N3866 2n3866 philips PHILIPS 4312 amplifier Silicon Epitaxial Planar Transistor philips data 2n3866

t 3866 power transistor

Abstract: transistor 3866 s â  bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D , itter voltage V CER R& e = 10 max. 55 2N4427 40 V v C EO max. 30 20 V , *T min. 500 500 M Hz R.F. performance type number 2N3866 2N4427 f (MHz) V C E , voltage (open em itter)^ 2N4427 v CBO m ax. 55 40 V VCER max. 55 40 V , _ bbSB^Bl 002^763 4fl5 b'lE » N AMER PHILIPS/DISCRETE IAPX 2N 3866 2N4427
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t 3866 power transistor transistor 3866 s t 3866 transistor transistor 3866 550S7
Abstract: 2N4427 w w w. c e n t r a l s e m i . c o m SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4427 is a silicon types are silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL , pF dB 50 % 100 mW R1 (4-June 2013) 2N4427 SILICON NPN RF TRANSISTOR TO-39 CASE , R1 (4-June 2013) w w w. c e n t r a l s e m i . c o m 2N4427 SILICON NPN RF TRANSISTOR Central Semiconductor
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2n4427 MOTOROLA

Abstract: motorola 2N4427 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · · Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product , -39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier , Dissipation @ TA = 25ºC Derate above 25ºC MSC1301.PDF 10-25-99 2N4427 ELECTRICAL SPECIFICATIONS , - MHz - 4.0 - pF 2N4427 FUNCTIONAL Symbol Test Conditions Value Min
Microsemi
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2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 MOTOROLA SELECTION NPN Transistor output 10 w low cost BFR90 transistor 2N3866 application note MRF581 MRF586 MRF951 MRF571 BFR91 BFR90

2N4427 equivalent

Abstract: RCA-2N4427 File No. 228 DQGBZ/D RF Power Transistors Solid State Division _ 2N4427 Silicon N-P-N Overlay Transistor High-Gain Driver for VHF-UHF Features: â  1 W output with 10 dB gain (min.) at 175 MHz VCC = 12 V â  0.4 W output with 5 dB gain (typ.) at 470 MHz VCC=12V RCA-2N4427 is an epitaxial silicon n-p-n planar transistor of the "overlay" emitter electrode construction. It is intended , . IB 0.4 A * TRANSISTOR DISSIPATION: PT At case temperatures up to 100Â
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RCA-2N4427 2n4427 rca Trimmer ARCO 9ZCS-13157R2 92CS-I9I73 92CS-I564IR2

2N4427

Abstract: 1300 NPN 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · · · · · Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base , ) @ 175 MHz DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications , Dissipation @ TA = 25ºC Derate above 25ºC 2N4427.PDF 6-25-03 Advanced Power Technology reserves the , at WWW.ADVANCEDPOWER.COM or contact our factory direct 2N4427 ELECTRICAL SPECIFICATIONS (Tcase =
Advanced Power Technology
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MRF4427 1300 NPN MRF553 MRF555 MRF607 RF NPN POWER TRANSISTOR 1000 WATT 2N3866A

2N4427

Abstract: BFR98 2N4427 BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier , Storage and Junction Temperature 3.5 W ­ 65 to 200 °C 1/5 2N4427-BFR98 THERMAL DATA Rt , circuit. RF Output Power. 2/5 V Collector-base Capacitance. 2N4427-BFR98 TEST CIRCUIT , 2N4427-BFR98 TO39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP
STMicroelectronics
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2n4427-bfr98 2N4427-BFR98 P008B

a7f transistor

Abstract: 2N4427 rz7 SCS-THOMSON 2N4427 A7f BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and oscillator applications. INTERNAL SCHEMATIC DIAGRAM o BO NPN S- b»H , Temperature - 65 to 200 °C January 1989 1/3 403 2N4427-BFR98 THERMAL DATA R th i-case Thermal , . Collector-base Capacitance. G - 3347 G - 3348 â'"_ /ZT SCS-THOMSON Eûaocin®iiiyiciriR©i)9ocs 404 2N4427
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a7f transistor A-7-F npn zg

4427B

Abstract: 2N4427 R IPTIO N The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Je d e c T O -39 , rature 40 20 3.5 0.5 3.5 - 65 to 200 V V V A W °C January 1989 1/5 2N4427 , rz7 SGS-THOMSON < < 2N4427-BFR98 TEST CIRC UIT Test C ircuit tor Pow er O utput M , , 1/4" ID, 1/4" long = 4 turns 16 w ire, 3/8" ID, 3/8" long *57 SGS-THOMSON 3/5 2N4427 , SGS-THOMSON 2N4427-BFR98 Information furnished is believed to be accurate and reliable. However
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4427B FR98 SGS-Thomson
Abstract: 3QE D â  0 Q 31 22 1 5 â  ~ T >3 3 - 0 3 - SGS-THOMSON [»^(miOTFlFMOfOS 2N4427 BFR98 S G S-THOMSON -â'" â'" - VHF OSCILLATOR POWER AMPLIFIER DESC RIPTIO N The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in JedecTO-39 metal case. They are , T stg . T j January 1989 Storage and Junction Temperature V 1/3 403 2N4427 , 30E D H 1 ^ 2 3 7 0031523 b â  - â'"- â' S 2N4427 -
OCR Scan
T-33-05

2n4427

Abstract: transistor 2N4427 2N4427 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI 2N4427 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS 400 mA IC VCE 20 V PDISS 3.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C JC 50 °C/W 1 = EMITTER 2 = BASE 3 = COLLECTOR NONE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS 20 BVCER
Advanced Semiconductor
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high frequency transistor

MRF239

Abstract: MOTOROLA TRANSISTOR MRF239 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , , enables the circuit designer to select the optimum device from Motorola's wide range of transistor/package combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , 12.5 TO-39 MRF604 175 0.1 1.0 10.0 12.5 TO-46 2N4427 175 0.1 1.0 10.0 12.5 TO-39 MRF553 175 0.1 1.5 , Watts Watts dB Min Volts Package 2N4427 1.0 0.1 10 12 TO-2Û5AD MRF604 1.0 0.1 10 12.5 T0
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MRF237 MRF260 MRF212 MRF262 MRF4070 MRF238 MRF239 MOTOROLA TRANSISTOR MRF239 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA 2N5836 2N5837 MRF511 MRF517 MRF525 2N2857

2N4427

Abstract: 2n4427 MOTOROLA MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4427 The R F Line 1 W - 1 7 5 MHz NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator , stages in V H F and U H F equipm ent. HIGH FREQUENCY TRANSISTOR N PN SILIC O N · Specified 175 , »39l M O T O R O L A R F D E V IC E DATA 2 -2 3 2N4427 E L E C T R IC A L C H A R A C T E R , turns No. IB win, I / * " 10. 1/4" long L4: 4 turns No. 16 win, 3/8" ID. 3/8" long Q 2N4427 M O T O R
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MOTOROLA SELECTION mrf237

Abstract: Motorola transistors MRF630  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , , enables the circuit designer to select the optimum device from Motorola's wide range of transistor/package combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , 12.5 TO-39 MRF604 175 0.1 1.0 10.0 12.5 TO-46 2N4427 175 0.1 1.0 10.0 12.5 TO-39 MRF553 175 0.1 1.5
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MRF572 MRF227 MRF515 MRF629 Motorola transistors MRF630 MRF630 MOTOROLA 2N3553 motorola Transistor MRF630 Motorola transistors MRF629 2N3339 2N5179 MRF501 MRF502 BFX89 BFY90

rca 2n3375

Abstract: 2N3553 equivalent Integrated CircuitsJNew Product News Arrays 4-Transistor Arrays RCA-CA3018A $1.35 02 , matched ± 10% E VB matched = 2 mV (CA3018A) E VB matched ± 5 mV (CA3018) E 5-Transistor Arrays RCA-CA3045 RCA-CA3046 $1.50 (Die) $ .98 (d ip ) Each Transistor Offers: hF of 100 (typ) @ VC = 3V , V r = - 2 V V? m High-Gain Transistor Array RCA-CA3036 $ .89(?wead TO-5) dual , plifier # 3 2.5MHz (typ) Two Wideband IF Amplifiers Drive Output Tube or Transistor Directly
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RCA-CA3000 rca 2n3375 2N3553 equivalent RCA RF POWER TRANSISTOR 2N5070 CA3016 RCA Transistors 000-S 2N1492 RCA-CA3001 RCA-CA3002 RCA-CA3004

PT8811

Abstract: PT8740 cross reference ^ listed'équivalence toomson-csf THOMSON-CSF product line for RF power transistors has successfully cross referenced many competitive transistor products. In most cases, these , BFS51 2N4427 CD1611 SD1278 MM8002 SD 1006 MSC82001 TH2001 PT9732 SD1013 2N5712 2N5642 BFW46 2 N3924 , J03030 SD 1488 MRF502 SD 1300 PT5656 SD 1202 2 N3294 SD1310 40290 2N3553 BLY61 2N4427 J03040 SD 1488 , PT8742 SD1146 2N5646 2N5946 B12-28 SD1013 MM1666 2N6082 MSC1010 TH1010 PT8743 SD 1136 2N5687 2N4427
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MM1669 PT8811 PT8828 2N6095 PT9383 2N918 PT8740 transistor pt4544 RF Transistor S10-12 BAM20 B25-12 2N6084 MSC2304 TH2304 PT8809
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