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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor z5

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR Z4

Abstract: transistor Z2 Power Transistor RT230PD Product Features Application · 50 ~ 4000 MHz · 18dB Gain , specifications may change without notice. Version 5.2 Power Transistor RT230PD Electrical , specifications may change without notice. Version 5.2 Power Transistor RT230PD Application Circuit , RT230PD Z5 Z4 C11 C9 Bill of Material Text Value Size(mm) Text Value Size , 51 1608 Z5 1.43.0 R2 8.2 1608 Tel : 82-31-250-5011 rfsales@rfhic.com WL
RFHIC
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SP-12 TRANSISTOR Z4 transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n 900MH

transistor C4

Abstract: Power Transistor RT230PD Product Features Application â'¢ 50 ~ 4000 MHz â'¢ 18dB Gain , Power Transistor RT230PD Electrical Specifications Parameter UNIT Typical Frequency , without notice. ⪠Version 5.2 Power Transistor RT230PD Application Circuit for RT230PD(824 , + R1 - L2 L1 RF IN C8 L3 Z2 R2 Z1 Z3 RF OUT C10 RT230PD Z5 , "¦ 1608 Z5 1.4â¹3.0 R2 8.2 â"¦ 1608 ⪠Tel : 82-31-250-5011 ⪠rfsales@rfhic.com
RFHIC
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transistor C4

TRANSISTOR Z4

Abstract: transistor z3 Power Transistor RT230PD Product Features Application â'¢ 50 ~ 4000 MHz â'¢ 18dB Gain , Power Transistor RT230PD Electrical Specifications PARAMETER UNIT Typical Frequency , rfsales@rfhic.com ⪠Version 5.2 Power Transistor RT230PD Application Circuit for RT230PD(824 ~ 896MHz , L2 L1 RF IN C8 L3 Z2 R2 Z1 Z3 RF OUT C10 RT230PD Z5 Z4 C11 , ¹1.5 C9 5pF 1608 Z3 C11 4pF 1608 Z4 1.4â¹6.0 R1 51 â"¦ 1608 Z5
RFHIC
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transistor z3 IRLML5203 LTC1261 1/16W

sot23-5 aaak

Abstract: sot23-5 mosfet driver increments. Designed with an internal P-channel MOSFET pass transistor, the MAX8877/MAX8878 maintain a low , , the MAX8877/MAX8878 consist of a 1.25V reference, error amplifier, P-channel pass transistor, and , MAX8877/MAX8878 feature a 1.1 typical P-channel MOSFET pass transistor. This provides several advantages , considerable current in dropout when the pass transistor saturates. They also use high base-drive currents , ground plane. MAX8877/MAX8878 Internal P-Channel Pass Transistor Reverse Battery Protection The
Maxim Integrated Products
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sot23-5 aaak sot23-5 mosfet driver aaai sot23-5 SOT-23 AAAA transistor acby sot23-5 SOT-23 5 PIN MAX8878 MAX8877/MAX88 MAX8878EUK28 MAX8878EZK28-TG50 MAX8878EUK29 MAX8878EUK33

transistor z9

Abstract: transistor Z2 Preliminary 10W Power Transistor RT240PD Product Features Application · High Output , ) All specifications may change without notice. www.rfhic.com Preliminary 10W Power Transistor , + + Z5 R2 - Z6 RT240PD RF OUT RF IN Z1 C1 Z3 Z2 R1 Z7 Z4 , 1.49.7 Z4 9.08.1 Z9 1.49.2 Z5 0.542.8 PCB * IS-95 * S11 & Gain Tuning Point , Transistor RT240PD Test Circuit Board All specifications may change without notice. www.rfhic.com
RFHIC
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transistor z9 cdma repeater circuit B 1449 transistor RT240 1608 B 100NF gsm wcdma repeater IMT-2000 K045101

transistor z5

Abstract: 027w COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The transistor includes input prematch for broadband capability. The device has gold thinfilm , C5 50 VDC R1 L1 Z5 C2 Input 50 Ohms Z1 Z2 Q1 C3 Z3 Z4 50 Ohm Output C1 PC Board Material .010" Dielectric Teflon Fiberglass Note: Slide C2 along Z5 for best tuning , X any convenient length L1=Inductor, #18 wire, 1.5" long Z5=50W , .12l , =.027"w X .86"L
Ghz Technology
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027w 10KW Transistor z1
Abstract: Transistor at Vq s = 15V â'¢ rDS(ON) 0.15Q Max Per Transistor at Vq s = 10V The HIP2060 is designed , .25A Each Transistor â'¢ Avalanche E n e rg y .100mJ Each Transistor â'¢ Grounded Tab , Symbol PKG. NO. HIP2060AS1 -40 to 125 5 Ld SIP Z5.067C HIP2060AS2 -40 to 125 5 Ld Gullwing SIP Z5.067A HIP2060AS3 -40 to 125 5 Ld SIP Z5.067B NOTE: W hen ordering , -169 HIP2060 AS2 1 GATE1 2 GATE2/V ^ % T i 3 SOURCE2 ' 4 SOURCE1-DRAIN2 5 DRAIN1 ' / / *" Z5 -
OCR Scan
TS-001A O-169 S-001AA

ic 067b

Abstract: HIP2060 Voltage to 60V · r[js(O N ) · r[)s(ON) 0.135Q Max Per Transistor at Vq s = 15V 0.15Q Max Per Transistor at Vq s = 10V · Pulsed Current.25A Each Transistor · Avalanche E n e rg y .100mJ Each Transistor · Grounded Tab Eliminates Heat Sink Isolation , 125 -40 to 125 PACKAGE 5 Ld SIP 5 Ld Gullwing SIP 5 Ld SIP PKG. NO. Z5.067C Z5.067A Z5.067B Symbol , / / *" Z5.067B (SIP) HIP2060 AS3 C AUTION: These devices are sensitive to electrostatic discharge
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OCR Scan
ic 067b rs20e transistor P1M 5M-1982

TRANSISTOR Z4

Abstract: Z227 a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes , Z4 Z5 50 Ohm Output C3 C6 C4 C5 PC Board Material .010" Dielectric Teflon Fiberglass , Z4=3.7W , .08l , =.55"w X .55"L Z5=50W , .075l , =.027"w X .56"L L1= Inductor #14 wire, 0.7" long , (100mil) ATC R1= Resistor, 15WK 1/4W Q1=GHz Transistor 0912-45 All electrical lengths taken at 1.09 GHz
Ghz Technology
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Z227 443l transistor DF 50 BVces 0912 Z1 Transistor

transistor z5

Abstract: 7w120 Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large­signal output and driver , "Q" BROADBAND PUSH­PULL RF POWER TRANSISTOR NPN SILICON · Built­In Input Impedance Matching , ) FUNCTIONAL TESTS (2) - See Figure 1 No Degradation in Output Power NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in push­pull amplifier. L5 C11 B1 C12 , Z3 C5 Z5 C6 Z6 C7 C8 Z3 Z4 C2 Z5 Z6 C10 D.U.T. L2 L4 L6 C16
M/A-COM
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7w120 redcap J053 erie redcap IC 2025 NPN TRANSISTOR Z4 MRF392/D

TRANSISTOR Z4

Abstract: Transistor Designed primarily for wideband large­signal output and driver amplifier stages in the 30 to 500 , "Q" BROADBAND PUSH­PULL RF POWER TRANSISTOR NPN SILICON CASE 744A­01, STYLE 1 The MRF392 is two , , Pout = 125 W, f = 400 MHz, VSWR = 30:1, all phase angles) NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in push­pull amplifier. L5 C11 C12 C13 + C14 C15 + 28 V ­ Gpe , C9 Z5 C7 Z5 L4 Z6 C8 Z6 C10 B2 Z3 C5 Z3 C6 Z4 L2 D.U.T. L6 C16 C17 C18 C19 C1
Motorola
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z3 transistor

Abstract: transistor z5 0912-25 25 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-25 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes , Z4 Z5 C5 C1 C2 PC Board Material .010" Dielectric Teflon Fiberglass Z1=50W , .112l , tuning Z4=10W , .04l, , .2"w X .28"L Z5=18.3W , .25l, , .1"w X .18"L August 1996 C1, C2=Capacitor
Ghz Technology
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z3 transistor

ATC100A101JP150

Abstract: GT5040 Arsenide pHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications , Z5 C3 C1 C2 C22 C21 Z6 Z7 Z8 Z10 Z11 Z13 Z14 Z15 Z16 C20 Z17 C19 Z12 C18 C17 C16 C15 C14 C13 C12 , . MRFG35010ANT1 Test Circuit Microstrips - 3550 MHz Microstrip Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8, Z10 Description 0.045 x , Transistor 51 , 1/10 W Chip Resistor 4.7 , 1/10 W Chip Resistor 0.020, r = 3.5 Part Number ATC600F101JT250XT , C1 Z2 Z3 C2 Z4 L1 C20 Z5 R2 Z6 C21 Figure 9. MRFG35010ANT1 Test Circuit Schematic - 750 MHz
Freescale Semiconductor
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ATC100A101JP150 GT5040 Transistor Z14 ATC100A101JP150XT ATC100B101JP500XT ATC100A100JP150X MRFG35010AN JESD22--A114 EIA/JESD22--A115 JESD22--C101

ATC100B471JT200XT

Abstract: EB-38 LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications , 74.5 74.7 60 IMD (dBc) -30 - - - 1.8-2000 MHz, 25 W, 50 V WIDEBAND RF POWER LDMOS TRANSISTOR , Cycle) CW (Top View) Note: The backside of the package is the source terminal for the transistor , C1 C2 C3 C4 L1 RF INPUT Z11 Z1 C5 C6 C7 C8 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C9 DUT C10 Z12 Z13 Z14 Z15 Z16
Freescale Semiconductor
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MRFE6VS25N ATC100B471JT200XT EB-38 ATC100B4R3CT500XT CDR33BX104AKWY ATC100B181JT300XT 651AT
Abstract: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications , MHz, 25 W, 50 V WIDEBAND RF POWER LDMOS TRANSISTOR IMD (dBc) 1.8 to 30 (1) Two-Tone (10 , ) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin , C3 C4 C13 C14 C15 L2 L1 Z11 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Freescale Semiconductor
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Abstract: Power Transistor RT240J / RT240 Product Features Application â'¢ Frequency Range = , without notice. ⪠rfsales@rfhic.com ⪠Version 5.2 Power Transistor RT240J / RT240 , Power Transistor RT240J / RT240 Application Circuit for RT240(2500MHz) Performance Charts (Vd = , %) Application Circuit C7 C6 C5 C4 C3 + C8 C9 Z4 C10 C11 C12 + - Z5 R1 RT240 RF OUT , 10pF Z5 C9 100pF C10 1nF C11 C7 1608 Wâ¹L Size(mm) 1.68 â¹16 Z6 RFHIC
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WP-22 WP-12
Abstract: LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio , RF POWER LDMOS TRANSISTOR 7.3 Wideband Performance (7.5 Vdc, TA = 25ï'°C, CW) Frequency (MHz , for the transistor. Figure 1. Pin Connections ï'· Characterized for Operation from 136 to 941 , C8 L1 Z2 Z3 Z4 Z5 C6 Z6 Z8 Z9 C15 Z10 Z11 Z13 L3 RF Z15 OUTPUT , 0.160ï'² ï'´ 0.320ï'² ï'´ 0.620ï'² Taper Z12 0.379ï'² ï'´ 0.320ï'² Microstrip Z5 0.058ï'² ï Freescale Semiconductor
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MMRF1021N MMRF1021NT1
Abstract: Power Transistor RT233 Product Features Application â'¢ Frequency Range = 50MHz ~ 6GHz , Power Transistor RT233 Typical Specifications (Ta=+25â"ƒ) PARAMETER Symbol Specifications , without notice. ⪠rfsales@rfhic.com ⪠Version 5.3 Power Transistor RT233 Application , C7 C6 C5 C4 C3 + Z4 - Z5 R1 RT233 RF OUT RF IN Z1 Z2 C1 Z3 Z6 Z7 , Z3 5 â¹8.8 R1 51Ω Z4 0.5 â¹18.1 C2,C8 10pF Z5 C9 100pF C10 RFHIC
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Abstract: Power Transistor RT243 Product Features Application â'¢ Frequency Range = 50MHz ~ 4GHz , ⪠Version 5.3 Power Transistor RT243 Typical Specifications (Ta=+25â"ƒ) PARAMETER , change without notice. ⪠rfsales@rfhic.com ⪠Version 5.3 Power Transistor RT243 , C13 + C7 C6 C5 C4 + Z4 - Z5 R1 RT243 RF OUT RF IN Z1 C1 Z3 Z2 , Z4 0.7 â¹2.6 C7,C12 100nF Z5 R1 51â"¦ C3,C9 10pF C10 100pF C7 RFHIC
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AFT09MS007NT1

Abstract: J262 LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 , 136â'"941 MHz, 7 W, 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR 7.3 Wideband Performance (7.5 Vdc, TA = , the source terminal for the transistor. Figure 1. Pin Connections Features ï'· Characterized , INPUT Z1 C8 L1 Z2 Z3 Z4 Z5 C6 Z6 Z8 Z9 C15 Z10 Z11 Z13 L3 RF , '² Microstrip Z5 0.058ï'² ï'´ 0.620ï'² Microstrip Z13 0.055ï'² ï'´ 0.320ï'² Microstrip Z6
Freescale Semiconductor
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J262 Z6 3pin AFT09MS007N
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