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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

transistor z5

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR Z4

Abstract: transistor Z2 Power Transistor RT230PD Product Features Application · 50 ~ 4000 MHz · 18dB Gain , specifications may change without notice. Version 5.2 Power Transistor RT230PD Electrical , specifications may change without notice. Version 5.2 Power Transistor RT230PD Application Circuit , RT230PD Z5 Z4 C11 C9 Bill of Material Text Value Size(mm) Text Value Size , 51 1608 Z5 1.43.0 R2 8.2 1608 Tel : 82-31-250-5011 rfsales@rfhic.com WL
RFHIC
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SP-12 TRANSISTOR Z4 transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n 900MH

transistor C4

Abstract: Power Transistor RT230PD Product Features Application â'¢ 50 ~ 4000 MHz â'¢ 18dB Gain , Power Transistor RT230PD Electrical Specifications Parameter UNIT Typical Frequency , without notice. ⪠Version 5.2 Power Transistor RT230PD Application Circuit for RT230PD(824 , + R1 - L2 L1 RF IN C8 L3 Z2 R2 Z1 Z3 RF OUT C10 RT230PD Z5 , "¦ 1608 Z5 1.4â¹3.0 R2 8.2 â"¦ 1608 ⪠Tel : 82-31-250-5011 ⪠rfsales@rfhic.com
RFHIC
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transistor C4

TRANSISTOR Z4

Abstract: transistor z3 Power Transistor RT230PD Product Features Application â'¢ 50 ~ 4000 MHz â'¢ 18dB Gain , Power Transistor RT230PD Electrical Specifications PARAMETER UNIT Typical Frequency , rfsales@rfhic.com ⪠Version 5.2 Power Transistor RT230PD Application Circuit for RT230PD(824 ~ 896MHz , L2 L1 RF IN C8 L3 Z2 R2 Z1 Z3 RF OUT C10 RT230PD Z5 Z4 C11 , ¹1.5 C9 5pF 1608 Z3 C11 4pF 1608 Z4 1.4â¹6.0 R1 51 â"¦ 1608 Z5
RFHIC
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transistor z3 IRLML5203 LTC1261 1/16W

sot23-5 aaak

Abstract: sot23-5 mosfet driver increments. Designed with an internal P-channel MOSFET pass transistor, the MAX8877/MAX8878 maintain a low , , the MAX8877/MAX8878 consist of a 1.25V reference, error amplifier, P-channel pass transistor, and , MAX8877/MAX8878 feature a 1.1 typical P-channel MOSFET pass transistor. This provides several advantages , considerable current in dropout when the pass transistor saturates. They also use high base-drive currents , ground plane. MAX8877/MAX8878 Internal P-Channel Pass Transistor Reverse Battery Protection The
Maxim Integrated Products
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sot23-5 aaak sot23-5 mosfet driver aaai sot23-5 SOT-23 AAAA transistor acby sot23-5 SOT-23 5 PIN MAX8878 MAX8877/MAX88 MAX8878EUK28 MAX8878EZK28-TG50 MAX8878EUK29 MAX8878EUK33

transistor z9

Abstract: transistor Z2 Preliminary 10W Power Transistor RT240PD Product Features Application · High Output , ) All specifications may change without notice. www.rfhic.com Preliminary 10W Power Transistor , + + Z5 R2 - Z6 RT240PD RF OUT RF IN Z1 C1 Z3 Z2 R1 Z7 Z4 , 1.49.7 Z4 9.08.1 Z9 1.49.2 Z5 0.542.8 PCB * IS-95 * S11 & Gain Tuning Point , Transistor RT240PD Test Circuit Board All specifications may change without notice. www.rfhic.com
RFHIC
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transistor z9 cdma repeater circuit B 1449 transistor RT240 1608 B 100NF gsm wcdma repeater IMT-2000 K045101

transistor z5

Abstract: 027w COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The transistor includes input prematch for broadband capability. The device has gold thinfilm , C5 50 VDC R1 L1 Z5 C2 Input 50 Ohms Z1 Z2 Q1 C3 Z3 Z4 50 Ohm Output C1 PC Board Material .010" Dielectric Teflon Fiberglass Note: Slide C2 along Z5 for best tuning , X any convenient length L1=Inductor, #18 wire, 1.5" long Z5=50W , .12l , =.027"w X .86"L
Ghz Technology
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027w 10KW Transistor z1
Abstract: Transistor at Vq s = 15V â'¢ rDS(ON) 0.15Q Max Per Transistor at Vq s = 10V The HIP2060 is designed , .25A Each Transistor â'¢ Avalanche E n e rg y .100mJ Each Transistor â'¢ Grounded Tab , Symbol PKG. NO. HIP2060AS1 -40 to 125 5 Ld SIP Z5.067C HIP2060AS2 -40 to 125 5 Ld Gullwing SIP Z5.067A HIP2060AS3 -40 to 125 5 Ld SIP Z5.067B NOTE: W hen ordering , -169 HIP2060 AS2 1 GATE1 2 GATE2/V ^ % T i 3 SOURCE2 ' 4 SOURCE1-DRAIN2 5 DRAIN1 ' / / *" Z5 -
OCR Scan
TS-001A O-169 S-001AA

ic 067b

Abstract: HIP2060 Voltage to 60V · r[js(O N ) · r[)s(ON) 0.135Q Max Per Transistor at Vq s = 15V 0.15Q Max Per Transistor at Vq s = 10V · Pulsed Current.25A Each Transistor · Avalanche E n e rg y .100mJ Each Transistor · Grounded Tab Eliminates Heat Sink Isolation , 125 -40 to 125 PACKAGE 5 Ld SIP 5 Ld Gullwing SIP 5 Ld SIP PKG. NO. Z5.067C Z5.067A Z5.067B Symbol , / / *" Z5.067B (SIP) HIP2060 AS3 C AUTION: These devices are sensitive to electrostatic discharge
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OCR Scan
ic 067b rs20e transistor P1M 5M-1982

TRANSISTOR Z4

Abstract: Z227 a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes , Z4 Z5 50 Ohm Output C3 C6 C4 C5 PC Board Material .010" Dielectric Teflon Fiberglass , Z4=3.7W , .08l , =.55"w X .55"L Z5=50W , .075l , =.027"w X .56"L L1= Inductor #14 wire, 0.7" long , (100mil) ATC R1= Resistor, 15WK 1/4W Q1=GHz Transistor 0912-45 All electrical lengths taken at 1.09 GHz
Ghz Technology
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Z227 443l transistor DF 50 BVces 0912 Z1 Transistor

transistor z5

Abstract: 7w120 Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large­signal output and driver , "Q" BROADBAND PUSH­PULL RF POWER TRANSISTOR NPN SILICON · Built­In Input Impedance Matching , ) FUNCTIONAL TESTS (2) - See Figure 1 No Degradation in Output Power NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in push­pull amplifier. L5 C11 B1 C12 , Z3 C5 Z5 C6 Z6 C7 C8 Z3 Z4 C2 Z5 Z6 C10 D.U.T. L2 L4 L6 C16
M/A-COM
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7w120 redcap J053 erie redcap IC 2025 NPN TRANSISTOR Z4 MRF392/D

TRANSISTOR Z4

Abstract: Transistor Designed primarily for wideband large­signal output and driver amplifier stages in the 30 to 500 , "Q" BROADBAND PUSH­PULL RF POWER TRANSISTOR NPN SILICON CASE 744A­01, STYLE 1 The MRF392 is two , , Pout = 125 W, f = 400 MHz, VSWR = 30:1, all phase angles) NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in push­pull amplifier. L5 C11 C12 C13 + C14 C15 + 28 V ­ Gpe , C9 Z5 C7 Z5 L4 Z6 C8 Z6 C10 B2 Z3 C5 Z3 C6 Z4 L2 D.U.T. L6 C16 C17 C18 C19 C1
Motorola
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z3 transistor

Abstract: transistor z5 0912-25 25 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-25 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes , Z4 Z5 C5 C1 C2 PC Board Material .010" Dielectric Teflon Fiberglass Z1=50W , .112l , tuning Z4=10W , .04l, , .2"w X .28"L Z5=18.3W , .25l, , .1"w X .18"L August 1996 C1, C2=Capacitor
Ghz Technology
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z3 transistor

ATC100A101JP150

Abstract: GT5040 Arsenide pHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications , Z5 C3 C1 C2 C22 C21 Z6 Z7 Z8 Z10 Z11 Z13 Z14 Z15 Z16 C20 Z17 C19 Z12 C18 C17 C16 C15 C14 C13 C12 , . MRFG35010ANT1 Test Circuit Microstrips - 3550 MHz Microstrip Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8, Z10 Description 0.045 x , Transistor 51 , 1/10 W Chip Resistor 4.7 , 1/10 W Chip Resistor 0.020, r = 3.5 Part Number ATC600F101JT250XT , C1 Z2 Z3 C2 Z4 L1 C20 Z5 R2 Z6 C21 Figure 9. MRFG35010ANT1 Test Circuit Schematic - 750 MHz
Freescale Semiconductor
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ATC100A101JP150 GT5040 Transistor Z14 ATC100A101JP150XT ATC100B101JP500XT ATC100A100JP150X MRFG35010AN JESD22--A114 EIA/JESD22--A115 JESD22--C101

ATC100B471JT200XT

Abstract: EB-38 LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications , 74.5 74.7 60 IMD (dBc) -30 - - - 1.8-2000 MHz, 25 W, 50 V WIDEBAND RF POWER LDMOS TRANSISTOR , Cycle) CW (Top View) Note: The backside of the package is the source terminal for the transistor , C1 C2 C3 C4 L1 RF INPUT Z11 Z1 C5 C6 C7 C8 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C9 DUT C10 Z12 Z13 Z14 Z15 Z16
Freescale Semiconductor
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MRFE6VS25N ATC100B471JT200XT EB-38 ATC100B4R3CT500XT CDR33BX104AKWY ATC100B181JT300XT 651AT
Abstract: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications , MHz, 25 W, 50 V WIDEBAND RF POWER LDMOS TRANSISTOR IMD (dBc) 1.8 to 30 (1) Two-Tone (10 , ) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin , C3 C4 C13 C14 C15 L2 L1 Z11 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Freescale Semiconductor
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Abstract: Power Transistor RT240J / RT240 Product Features Application â'¢ Frequency Range = , without notice. ⪠rfsales@rfhic.com ⪠Version 5.2 Power Transistor RT240J / RT240 , Power Transistor RT240J / RT240 Application Circuit for RT240(2500MHz) Performance Charts (Vd = , %) Application Circuit C7 C6 C5 C4 C3 + C8 C9 Z4 C10 C11 C12 + - Z5 R1 RT240 RF OUT , 10pF Z5 C9 100pF C10 1nF C11 C7 1608 Wâ¹L Size(mm) 1.68 â¹16 Z6 RFHIC
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WP-22 WP-12
Abstract: LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio , RF POWER LDMOS TRANSISTOR 7.3 Wideband Performance (7.5 Vdc, TA = 25ï'°C, CW) Frequency (MHz , for the transistor. Figure 1. Pin Connections ï'· Characterized for Operation from 136 to 941 , C8 L1 Z2 Z3 Z4 Z5 C6 Z6 Z8 Z9 C15 Z10 Z11 Z13 L3 RF Z15 OUTPUT , 0.160ï'² ï'´ 0.320ï'² ï'´ 0.620ï'² Taper Z12 0.379ï'² ï'´ 0.320ï'² Microstrip Z5 0.058ï'² ï Freescale Semiconductor
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MMRF1021N MMRF1021NT1
Abstract: Power Transistor RT233 Product Features Application â'¢ Frequency Range = 50MHz ~ 6GHz , Power Transistor RT233 Typical Specifications (Ta=+25â"ƒ) PARAMETER Symbol Specifications , without notice. ⪠rfsales@rfhic.com ⪠Version 5.3 Power Transistor RT233 Application , C7 C6 C5 C4 C3 + Z4 - Z5 R1 RT233 RF OUT RF IN Z1 Z2 C1 Z3 Z6 Z7 , Z3 5 â¹8.8 R1 51Ω Z4 0.5 â¹18.1 C2,C8 10pF Z5 C9 100pF C10 RFHIC
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Abstract: Power Transistor RT243 Product Features Application â'¢ Frequency Range = 50MHz ~ 4GHz , ⪠Version 5.3 Power Transistor RT243 Typical Specifications (Ta=+25â"ƒ) PARAMETER , change without notice. ⪠rfsales@rfhic.com ⪠Version 5.3 Power Transistor RT243 , C13 + C7 C6 C5 C4 + Z4 - Z5 R1 RT243 RF OUT RF IN Z1 C1 Z3 Z2 , Z4 0.7 â¹2.6 C7,C12 100nF Z5 R1 51â"¦ C3,C9 10pF C10 100pF C7 RFHIC
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AFT09MS007NT1

Abstract: J262 LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 , 136â'"941 MHz, 7 W, 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR 7.3 Wideband Performance (7.5 Vdc, TA = , the source terminal for the transistor. Figure 1. Pin Connections Features ï'· Characterized , INPUT Z1 C8 L1 Z2 Z3 Z4 Z5 C6 Z6 Z8 Z9 C15 Z10 Z11 Z13 L3 RF , '² Microstrip Z5 0.058ï'² ï'´ 0.620ï'² Microstrip Z13 0.055ï'² ï'´ 0.320ï'² Microstrip Z6
Freescale Semiconductor
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J262 Z6 3pin AFT09MS007N
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